JP2009151920A5 - - Google Patents

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Publication number
JP2009151920A5
JP2009151920A5 JP2008306999A JP2008306999A JP2009151920A5 JP 2009151920 A5 JP2009151920 A5 JP 2009151920A5 JP 2008306999 A JP2008306999 A JP 2008306999A JP 2008306999 A JP2008306999 A JP 2008306999A JP 2009151920 A5 JP2009151920 A5 JP 2009151920A5
Authority
JP
Japan
Prior art keywords
voltage
transistor
operation time
line
voltage line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008306999A
Other languages
English (en)
Japanese (ja)
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JP2009151920A (ja
Filing date
Publication date
Priority claimed from TW096148594A external-priority patent/TWI358067B/zh
Application filed filed Critical
Publication of JP2009151920A publication Critical patent/JP2009151920A/ja
Publication of JP2009151920A5 publication Critical patent/JP2009151920A5/ja
Pending legal-status Critical Current

Links

JP2008306999A 2007-12-19 2008-12-02 メモリデバイスと放電回路とを備える集積回路 Pending JP2009151920A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096148594A TWI358067B (en) 2007-12-19 2007-12-19 Integrated circuits and discharge circuits

Publications (2)

Publication Number Publication Date
JP2009151920A JP2009151920A (ja) 2009-07-09
JP2009151920A5 true JP2009151920A5 (enExample) 2011-10-27

Family

ID=40788427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008306999A Pending JP2009151920A (ja) 2007-12-19 2008-12-02 メモリデバイスと放電回路とを備える集積回路

Country Status (3)

Country Link
US (1) US7903470B2 (enExample)
JP (1) JP2009151920A (enExample)
TW (1) TWI358067B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8000151B2 (en) 2008-01-10 2011-08-16 Micron Technology, Inc. Semiconductor memory column decoder device and method
US8576611B2 (en) 2010-07-08 2013-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Memory with regulated ground nodes
US9208889B2 (en) * 2013-02-08 2015-12-08 Sandisk Technologies Inc. Non-volatile memory including bit line switch transistors formed in a triple-well
JP5883494B1 (ja) * 2014-11-19 2016-03-15 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
WO2016131010A1 (en) * 2015-02-13 2016-08-18 Apple Inc. Charge pump having ac and dc outputs for touch panel bootstrapping and substrate biasing
CN107370351B (zh) * 2016-05-13 2019-12-27 中芯国际集成电路制造（天津）有限公司 电荷泄放电路
CN119943114A (zh) * 2023-11-02 2025-05-06 长江存储科技有限责任公司 存储器装置及其操作方法、存储器系统

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5740109A (en) * 1996-08-23 1998-04-14 Motorola, Inc. Non-linear charge pump
KR100481841B1 (ko) * 1997-11-25 2005-08-25 삼성전자주식회사 음의고전압을방전시키기위한회로를구비한플래시메모리장치
JP2000021186A (ja) * 1998-07-02 2000-01-21 Toshiba Corp 不揮発性半導体記憶装置
JP3883391B2 (ja) * 2001-02-28 2007-02-21 シャープ株式会社 不揮発性半導体メモリのウェル電圧設定回路およびそれを備えた半導体メモリ装置
US6667910B2 (en) * 2002-05-10 2003-12-23 Micron Technology, Inc. Method and apparatus for discharging an array well in a flash memory device
JP4357351B2 (ja) * 2004-04-23 2009-11-04 株式会社東芝 不揮発性半導体記憶装置
DE102004028934B3 (de) * 2004-06-15 2006-01-05 Infineon Technologies Ag Entladeschaltung für eine kapazitive Last
JP4881552B2 (ja) * 2004-09-09 2012-02-22 ルネサスエレクトロニクス株式会社 半導体装置
US7272053B2 (en) * 2004-11-18 2007-09-18 Freescale Semiconductor, Inc. Integrated circuit having a non-volatile memory with discharge rate control and method therefor
KR100688545B1 (ko) * 2005-05-04 2007-03-02 삼성전자주식회사 메모리 장치의 소거 전압 디스차지 방법
JP4903432B2 (ja) * 2005-12-27 2012-03-28 株式会社東芝 不揮発性半導体記憶装置
JP2008004336A (ja) * 2006-06-21 2008-01-10 Yazaki Corp コネクタ
JP2008004236A (ja) * 2006-06-26 2008-01-10 Samsung Electronics Co Ltd 不揮発性半導体記憶装置の消去放電制御方法

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