TWI348187B - Polishing method and method for fabricating semiconductor device - Google Patents

Polishing method and method for fabricating semiconductor device

Info

Publication number
TWI348187B
TWI348187B TW096117514A TW96117514A TWI348187B TW I348187 B TWI348187 B TW I348187B TW 096117514 A TW096117514 A TW 096117514A TW 96117514 A TW96117514 A TW 96117514A TW I348187 B TWI348187 B TW I348187B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
fabricating semiconductor
polishing
polishing method
fabricating
Prior art date
Application number
TW096117514A
Other languages
English (en)
Other versions
TW200811939A (en
Inventor
Dai Fukushima
Gaku Minamihaba
Hiroyuki Yano
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200811939A publication Critical patent/TW200811939A/zh
Application granted granted Critical
Publication of TWI348187B publication Critical patent/TWI348187B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW096117514A 2006-05-23 2007-05-17 Polishing method and method for fabricating semiconductor device TWI348187B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006142585A JP4901301B2 (ja) 2006-05-23 2006-05-23 研磨方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200811939A TW200811939A (en) 2008-03-01
TWI348187B true TWI348187B (en) 2011-09-01

Family

ID=38851342

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096117514A TWI348187B (en) 2006-05-23 2007-05-17 Polishing method and method for fabricating semiconductor device

Country Status (3)

Country Link
US (1) US8778802B2 (zh)
JP (1) JP4901301B2 (zh)
TW (1) TWI348187B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008036783A (ja) 2006-08-08 2008-02-21 Sony Corp 研磨方法および研磨装置
JP5395708B2 (ja) 2010-03-09 2014-01-22 東京エレクトロン株式会社 基板の配線方法及び半導体製造装置
EP2722872A4 (en) * 2011-06-14 2015-04-29 Fujimi Inc POLISHING COMPOSITION
JP5791987B2 (ja) * 2011-07-19 2015-10-07 株式会社荏原製作所 研磨装置および方法
KR20130090209A (ko) * 2012-02-03 2013-08-13 삼성전자주식회사 기판처리장치 및 기판처리방법
KR101526006B1 (ko) * 2012-12-31 2015-06-04 제일모직주식회사 구리 연마용 cmp 슬러리 조성물　및 이를 이용한 연마 방법
JP2016004903A (ja) 2014-06-17 2016-01-12 株式会社東芝 研磨装置、研磨方法、及び半導体装置の製造方法
US9902038B2 (en) 2015-02-05 2018-02-27 Toshiba Memory Corporation Polishing apparatus, polishing method, and semiconductor manufacturing method
JP6517108B2 (ja) * 2015-08-05 2019-05-22 株式会社ディスコ Ｃｍｐ研磨装置
JP2018116458A (ja) * 2017-01-18 2018-07-26 ファナック株式会社 制御装置
JP6882017B2 (ja) * 2017-03-06 2021-06-02 株式会社荏原製作所 研磨方法、研磨装置、および基板処理システム

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0957608A (ja) 1995-08-11 1997-03-04 Sony Corp 研磨パッド及びこれを用いた被表面処理加工物の研磨方法
JPH1034535A (ja) * 1996-07-24 1998-02-10 Sony Corp 研磨方法及び研磨装置
JP2800802B2 (ja) * 1996-09-20 1998-09-21 日本電気株式会社 半導体ウェハーのｃｍｐ装置
JPH10193257A (ja) * 1996-11-04 1998-07-28 Motorola Inc 化学的機械的研磨方法
JPH10277922A (ja) * 1997-02-05 1998-10-20 Sony Corp 化学的機械研磨装置
JP3902724B2 (ja) * 1997-12-26 2007-04-11 株式会社荏原製作所 研磨装置
JP3696405B2 (ja) * 1998-05-29 2005-09-21 沖電気工業株式会社 化学的機械的研磨装置
US6232228B1 (en) * 1998-06-25 2001-05-15 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method
JP2000006010A (ja) * 1998-06-26 2000-01-11 Ebara Corp Ｃｍｐ装置及びその砥液供給方法
TW434113B (en) * 1999-03-16 2001-05-16 Applied Materials Inc Polishing apparatus
JP2001212750A (ja) * 1999-11-25 2001-08-07 Fujikoshi Mach Corp ポリシングマシンの洗浄装置およびポリシングマシン
JP2002043256A (ja) * 2000-07-27 2002-02-08 Hitachi Ltd 半導体ウエハ平坦化加工方法及び平坦化加工装置
JP2002273651A (ja) * 2001-03-19 2002-09-25 Fujitsu Ltd 研磨方法及び研磨装置
JP2002370159A (ja) * 2001-06-12 2002-12-24 Ebara Corp ポリッシング装置
JP2002370168A (ja) * 2001-06-15 2002-12-24 Hitachi Ltd 研磨方法および研磨装置
JP2003031536A (ja) * 2001-07-12 2003-01-31 Nec Corp ウエハの洗浄方法
US6887132B2 (en) * 2001-09-10 2005-05-03 Multi Planar Technologies Incorporated Slurry distributor for chemical mechanical polishing apparatus and method of using the same
JP2003142436A (ja) * 2001-10-31 2003-05-16 Internatl Business Mach Corp <Ibm> 研磨用スラリー供給装置及びその供給方法
JP2004063888A (ja) * 2002-07-30 2004-02-26 Applied Materials Inc 化学機械研磨装置用のスラリ供給装置
JP2004066376A (ja) * 2002-08-05 2004-03-04 Nippei Toyama Corp 半導体ウエーハ研削盤のクーラント噴射装置およびその方法
JP2005123232A (ja) 2003-10-14 2005-05-12 Toshiba Corp 研磨装置及び研磨方法、並びに半導体装置の製造方法。
JP2005262406A (ja) * 2004-03-19 2005-09-29 Toshiba Corp 研磨装置および半導体装置の製造方法
JP2006147773A (ja) 2004-11-18 2006-06-08 Ebara Corp 研磨装置および研磨方法

Also Published As

Publication number Publication date
JP2007317702A (ja) 2007-12-06
US20070293047A1 (en) 2007-12-20
JP4901301B2 (ja) 2012-03-21
TW200811939A (en) 2008-03-01
US8778802B2 (en) 2014-07-15

Similar Documents

Publication Publication Date Title
TWI365490B (en) Semiconductor device and method for manufacturing same
TWI349981B (en) Semiconductor device and manufacturing method thereof
EP2015353A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
TWI318002B (en) Semiconductor device and manufacturing method thereof
TWI349346B (en) Semiconductor device and method for manufacturing the same
TWI348746B (en) Method for fabricating semiconductor device
EP2067173A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
TWI372445B (en) Semiconductor device and method for making the same
TWI348187B (en) Polishing method and method for fabricating semiconductor device
EP2037496A4 (en) SEMICONDUCTOR ASSEMBLY AND SEMICONDUCTOR MANUFACTURING METHOD
EP2221859A4 (en) SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
TWI371836B (en) Semiconductor device and method for fabricating the same
EP1921674A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2140480A4 (en) METHOD FOR PRODUCING AN SOI SUBSTRATE AND SEMICONDUCTOR ARRANGEMENT
EP2088619A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
EP2096678A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
EP1887624A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2023404A4 (en) OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
EP2117036A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI373114B (en) Semiconductor device and manufacturing method thereof
EP2064732A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2112685A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP2089907A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
TWI339878B (en) Semiconductor device and fabrication method thereof
EP2092552A4 (en) MANUFACTURING METHOD FOR SEMICONDUCTOR COMPONENTS