434 1 1 3 A7 B7 五、發明説明（） 發明背景 (請先閱讀背面之注意事項再填寫本頁) 在半導體元件的形成過程中1在形成後續的層之前， 不同層（如氧化物）需要被平坦化以移除級距或高泜起 伏。典型地平坦化作用是藉由機械式地迫使半導體基材 s，面向下靠著半孔狀、飽含具研磨作用之化合物（即研 磨漿）的研磨墊，，並使該研磨墊相對於基板s旋轉。 研磨漿與基板表面反應，使該表面易於被去除，而研磨 墊與基板之間的旋轉運動，可機械式地移除居中的氧化 物，並持續不斷直到氧化物級距或高低起伏完全被去除3 此過程通常被稱為化學機械研磨（CMP)= 第一圖是傳統之化學機械研磨裝置Π的概略上視圖° 該研磨裝置11包含可旋轉之平台15，其上架設具有溝 槽的研磨墊1 7，用來研磨半導體基材S。該研磨墊1 7上 至少含有一道溝槽1 9，並典型地具有許多同心圓的溝槽 1 9沿著該研磨墊1 7的外緣配置。 經濟部智慧財產局員工消費合作社印製 該研磨裝置1丨更包含轉軸臂2 1、裝設在轉軸臂2 1末 端的支架或調節頭2 3、如研磨漿/清洗（s 1 u r r y / r i n s e)臂2 5 的研磨漿來源、諸如裝設於調節頭2 3底面並嵌有鑽石晶 體襯墊的研磨墊調節器2 7 a、以及與平台1 5的運作耦合 並靠著研磨墊1 7之溝槽1 9加壓於基板S的基板裝設頭 29。 轉軸臂21與平台1 5的運作耦合，當轉軸臂2 1以弧 形運動來回掃過研磨墊丨7的半徑範圍時，保持調節頭2 3 靠著研磨墊1 7，詳述如下。研磨漿/清洗臂2 5係被固定 本紙張尺度適用中國國家梯準（CNS ) A4規格（2!Ox2@ii·!：) 4 34 113、， A 7 B7 五'發明説明（） 在轉抽W 2 1的掃描範圍外，而調節頭2 3則是被稱合至 該處。 運作時，基板S面向下置於基板裝設頭2 9之下，基 板裝設頭2 9穩固地靠著研磨墊1 7的溝槽部份對基板S 施壓。研磨漿經由研磨漿/清洗臂2 5導入研磨墊1 7，而 平台15以箭頭R1所示之方向旋轉。轉軸f 21以箭頭S 1 所示之故形運動從邊緣掃描至邊緣，而調節頭2 3以箭·頭 R2所示之方向旋轉。 溝槽]9在基板S與研磨墊1 7之間引導研磨漿（未顯 示）。研磨墊1 7的半孔狀表面變得充滿研磨漿，隨著基 板裝設頭2 9的向下作用力與平台15的旋轉，研磨漿研 磨並平坦化基板 S的表面。鑲嵌在旋轉中之調節器2 7 a 的鑽石晶體，持續使研磨墊1 7的表面粗糙，以確保研磨 速率前後一致。 當研磨漿充滿在基板裝設頭2 9之下的溝槽時，除了 其他因子如 pH、溫度、與研磨本身的作用之外，基板裝 設頭29與其下方之基板S的向下作用力，容易壓緊和/ 或乾燥溝槽19中的研磨漿粒子1形成可能會移動和刮擦 基板 S的硬塊。於是，必須經常執行一種清潔研磨墊的 步驟，使碎片與固結的研磨漿脫離研磨墊丨7。434 1 1 3 A7 B7 V. Description of the invention () Background of the invention (please read the precautions on the back before filling out this page) In the process of forming a semiconductor element 1 Before forming the subsequent layers, different layers (such as oxides) need Flattened to remove pitch or high relief. The typical planarization effect is to mechanically force the semiconductor substrate s to face down on a semi-porous polishing pad that is full of a compound with polishing effect (ie, polishing slurry), and make the polishing pad relative to the substrate s Spin. The polishing slurry reacts with the surface of the substrate, making the surface easy to remove, and the rotating movement between the polishing pad and the substrate can mechanically remove the centered oxide, and continue until the oxide level or the height fluctuation is completely removed 3 This process is usually called chemical mechanical polishing (CMP) = The first picture is a schematic top view of a traditional chemical mechanical polishing device Π The polishing device 11 includes a rotatable platform 15 on which a polishing pad with grooves is set up 17. Used to grind the semiconductor substrate S. The polishing pad 17 includes at least one groove 19 and typically has a plurality of concentric grooves 19 arranged along the outer edge of the polishing pad 17. The grinding device 1 is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. It also includes a rotating shaft arm 2 1. A bracket or adjusting head 2 installed at the end of the rotating shaft arm 2 1 3. Such as grinding slurry / washing (s 1 urry / rinse) The source of the polishing slurry of the arm 2 5, such as a polishing pad adjuster 2 7 a mounted on the bottom surface of the adjustment head 2 3 and embedded with a diamond crystal pad, and a groove coupled to the operation of the platform 15 and resting against the polishing pad 17 The tank 19 is pressurized to the substrate mounting head 29 of the substrate S. The rotation arm 21 is coupled to the operation of the platform 15. When the rotation arm 21 is swept back and forth across the radius of the polishing pad 丨 7 in an arc, the adjustment head 2 3 is held against the polishing pad 17, as described in detail below. Grinding slurry / washing arm 2 5 series is fixed. The paper size is applicable to China National Standard (CNS) A4 specification (2! Ox2 @ ii ·! :) 4 34 113 、, A 7 B7 Five 'invention description () The scanning range of W 2 1 is outside, and the adjusting head 2 3 is weighed in there. In operation, the substrate S is placed face down under the substrate mounting head 29, and the substrate mounting head 29 firmly presses the substrate S against the groove portion of the polishing pad 17. The polishing slurry is introduced into the polishing pad 17 via the polishing slurry / washing arm 25, and the table 15 is rotated in the direction indicated by arrow R1. The rotating shaft f 21 scans from edge to edge in the shape movement shown by arrow S 1, and the adjustment head 2 3 rotates in the direction shown by arrow · head R2. [Groove] 9 guides a polishing slurry (not shown) between the substrate S and the polishing pad 17. The semi-porous surface of the polishing pad 17 becomes filled with polishing slurry. With the downward force of the substrate mounting head 29 and the rotation of the table 15, the polishing slurry grinds and flattens the surface of the substrate S. The diamond crystal embedded in the rotating regulator 2 7 a continuously roughens the surface of the polishing pad 17 to ensure that the polishing rate is consistent. When the polishing slurry fills the groove below the substrate mounting head 29, the downward force of the substrate mounting head 29 and the substrate S below it, in addition to the effects of other factors such as pH, temperature, and polishing itself, It is easy to compact and / or dry the slurry particles 1 in the groove 19 to form a hard mass that may move and scratch the substrate S. Therefore, a step of cleaning the polishing pad must be performed frequently to remove the chips and the consolidated polishing slurry from the polishing pad.
欲清洗研磨墊1 7時，需搬移基板裝設頭29避免與研 磨墊1 7接觸，關閉研磨漿/清洗臂2 5的研磨漿供應，並 經由研磨漿/清洗臂 2 5供給清洗液，如去離子水。為使 缺陷降至最低，該研磨墊清潔步驟最好在每一片基板S 本紙張尺度適用中國國家標準（<：\3)八4規格（210><2濟表％) (請先閱讀背面之注意事項再填寫本頁)When you want to clean the polishing pad 17, you need to move the substrate mounting head 29 to avoid contact with the polishing pad 17, turn off the polishing slurry supply of the polishing slurry / washing arm 25, and supply the cleaning liquid through the polishing slurry / washing arm 25, such as Deionized water. In order to minimize defects, the polishing pad cleaning step is best applied to each piece of substrate S. This paper size applies Chinese national standards (<: \ 3) 8-4 specifications (210 > < 2 economic table%) (Please read first (Notes on the back then fill out this page)
-1T 經濟部智慧財產局員工消費合作社印製 43 4 1 1 3 經濟部智慧財產局員工消費合作社印製 A7 _B7五、發明説明（） 研磨之後進行。然而，如此频繁地清洗，將增加清洗液 的消耗成本並降低研磨裝置1 1的總產出量。 因此，需要一種改良的研磨系統，以提供更有效率且 更低成本的研磨整清潔方式。 發明概述： 本發明提供一種研磨半導體基材s的設備。該設備包 含可旋轉的平台、裝設在該可旋轉平台上的研磨墊、以 及具雙重位置的研磨漿/清洗臂。該研磨漿/清洗臂具有附 帶研磨漿出口的研磨漿供給線，與附有清洗液出口的清 洗液供給線。該研磨漿/清洗臂經由在研磨位置與清洗位 置之間移動該手臂的機構，與該可旋轉平台耦合運作， 該研磨位置是該研磨漿/清洗臂從遠離研磨墊中心的位 置，供給研磨漿到研磨墊的地點，而該清洗位置是該研 磨漿/清洗臂供給清洗液到研磨墊中心的地點。在清洗位 置時，研磨漿/清洗臂最好位於研磨墊中心之上或鄰近研 磨墊中心，使得清洗液能喷灑在研磨墊中心（即供給清洗 液直接到研磨墊中心的位置）。較佳的情況是，研磨漿供 給線是可水平式地彎曲不同角度，亦即具水平彎角（angled h 〇 r i ζ ο n t a丨1 y)，而該手臂在研磨位置時，與研磨蟄中心有 一段水平距離。 因研磨漿/清洗臂可被擺放在雙重位置之故，使得該 手臂能被安裝並置於適當位置以達最佳清洗效果’而不 會被調節頭或基板裝設頭的路徑所限制。因此，本發明 本紙張尺度適用中國國家標準（CNS ) A4規格~ (請先閣讀背面之注意事項再填寫本莧) 經濟部智总財產局員工涓費合作社印製 434 1 13 at B7五'發明説明（） 研磨設備的研磨漿/清洗背，是用來供應清洗液橫越該听 磨墊的整個半徑範圍，與固定研磨漿/清洗臂、無法仲展 至研磨墊中心之傳統研磨設備相較下，能提供較佳的清 洗。 在第一具體化實施例中，清洗液出口包含一種線型噴 嘴，其送出從研磨墊邊緣延伸到至少是研磨墊中心的噴 霧，或包含眾多清洗液噴嘴，其喷霧最好一致地從研磨 墊邊緣延伸到至少是研磨墊的中心。如此，當研磨墊旋 轉時，能清洗到整個研磨墊。在另一具體化實施例中， 清洗的喷嘴可能延伸橫跨研磨墊的整個直徑範圍，以降 低清洗時間，或是，清洗液出口可能在研磨墊的邊緣到 中心來回掃描。 在第二具體化實施例中，研磨漿/清洗臂包含一種塾 狀刷子（p a d b r u s h)與該手臂賴合，以致於當該手臂位在 清洗位置時，會與研磨塾接觸。因此該手臂在清洗位置 時比其在研磨位置時更低》該墊狀刷子可加速粒子移除 的速率並鬆動被壓緊的粒子離開研磨墊溝槽，若在該處 僅有清洗的喷嘴，則不是無法移除粒子，就是需要相當 長的清洗時間和/或較大量的清洗液來移除粒子。儘管會 磨損，但為了保持與基板間均勻的接觸，該墊狀刷子最 好藉由一萬向接頭與該手臂耦合。 更進一步的具體化實施例，使用一個或更多的清洗液 喷嘴，置放在將清洗液導入墊狀刷子的位置（即刷子喷嘴 (b r u s h η ο z z 1 e))，以避免粒子被收集在塾狀刷子中，或將 (請先閱讀背面之注意事項再填本頁) 本紙張尺度適用中國國家標隼（CNS ) A4規格（210 X ) 134113- 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明（） 清洗液噴嘴置放在使清洗液導入墊狀刷子前面的位置（.即 預濕、潤喷嘴（p r e w e 11 i n g η ο z z 1 e))，以預濕潤研磨塾表面， 並幫助墊狀刷子的清潔工作=該刷子喷嘴與預濕潤喷嘴 最好以偏離正常7 0度的角度個別朝向或遠離墊狀刷子， 而刷子的刷毛最好按照合適於最小溝槽的尺寸製作（例 如：由調節頭產生的溝槽）。具有直徑0.0 0 5英吋刷毛之 稠密的尼龍刷，在清潔效果上是目前較佳的。 因此，本發明之半導體研磨設備附有雙重位置的研磨 漿/清洗臂、非必須的（option)墊狀刷子及非必須的刷子 噴嘴，可比傳統的半導體研磨設備更快、更完全地從研 磨蟄中心與研磨塾溝槽移除粒子，而且使用較少清洗液。 本發明的其他目的、特色及優點，籍由以下詳述之較 佳實施例、附加的專利申請範圍與伴隨之圖式，將更顯 而易見。 圖示簡單說明： 第1圖是如先前描述之傳統化學機械研磨裝置之概要 的上視平面圖； 第2A與第2B圖分別是本發明之雙重位置的研磨漿/ 清洗臂的前面及侧面正視圖（side elevational view); 第2C圖是第2A與第2B圖之本發明的研磨漿/清洗臂 的上視平面圖； 第3A與第3B圖是使用第2 A-C圖之本發明的研磨漿 /清洗臂，來研磨半導體基材S之設備的概要之上視平面 -- 本紙張尺度適用中國國家標準（CNS ) Α4規格（210〆297公釐） (請先閲讀背面之注意事項再填寫本頁) 43 4 113 at ____Π7___五'發明說明（） 圖，》別顯示該研磨漿/清洗臂在岍磨位置與清洗位置； 以殳 第4圖是使用預濕潤喷嘴之本發明的研磨漿/清洗f 之具體化實施例的側面正視圖。 圖號對照說明 11 15 17 19 21 23 2 5 27a 29 S、S, 211 213 215a' 215b 217a、 217b 2 19 221 、 225 223 224 第S頁 傳統之化學機械研磨裝置 平台 研磨塾 溝槽 轉抽臂 調節頭 研磨漿/清洗臂 研磨墊調節器 基板裝設頭 基板 研磨漿W青洗臂 手臂 第一、第二研磨漿供給線 第一、第二研磨漿出口 清洗液供給線 清洗液噴11黄 刷子 萬向接頭 -------------裝*-------訂---------線 f請先閱-背面之注意事項再填寫本頁) 本紙張尺度適闬中國R家標阜（CNS)A.l規烙（210 497 K复） • \i • \i 經濟部智慧財產局員工消費合作社印製 434 1 1 3 _ 五、發明說明（） 227 底座 229 鉸鏈 23 1 研磨設備 233 預濕潤喷嘴 235 刷子噴嘴 發明詳述： 第2 A與第2 B圖分別是前面及惻面正視圖，而第2 C 圖是本發明具雙重位置之研磨漿/清洗臂2 Π的較佳上視 平面圖。該研磨裝/清洗臂2 1 1包含手臂2 1 3，由第一研 磨漿供給線2 1 5 a與第二研磨漿供給線2 1 5 b延伸通過其 中。第一研磨漿供給線2 1 5 a具有第一研磨漿出口 2 1 7 a， 而第二研磨漿供給線2 1 5 b具有第二研磨漿出口 2 1 7 b = 第一與第二研磨漿供給線都是水平彎角，以致於導引研 磨漿向内到達研磨墊1 7的中心，如第3 A與第3 B圖所 示°具有清洗液出口如清洗液噴嘴2 2 I之清洗液供給線 2 1 9，亦與手臂 2 1 3耦合。非必須的（〇 p t i ο n a 1)刷子 2 2 3 沿著該手臂 2 1 3的底部延伸。最好該非必須的刷子2 2 3 係藉由萬向接頭224與手臂2 1 3耦合。萬向接頭 224允 許該刷子轉動，以致不管是研磨#的輪廊或是該刷子的 輪廟變動，該刷子之表面與研磨整1 7 (第1圖）可保持均 勻的接觸。非必須的清洗液噴嘴225與手臂2 1 3耦合， 以便導引清洗液進入非必須的刷子2 2 3 (即刷子噴嘴）。 手臂2 Π藉由自動控制的鉸鏈2 2 9與底座2 2 7耦合， 第9頁 本紙張尺度適用中國®家標準（CNS)A]規烙U10 >^97 ϋ ) -------------裝·-------訂---------線 (請先間讀背面之注意事項再填冩本頁) 經-部智-財產局㈡工消货合作社印製 434 1 1 3 < A7 _____IJ7____ 五、發明說明（） 該鉸鏈運作時，移動該手臂 2丨3在研磨位置與清洗位置 之間來回。如以下進一步的描述，最好是研磨位置水平 鄰近於清洗位置，如此，在研磨時將手臂 2 1 3置於離研 磨整中心（最好在研磨墊半徑的中心之上或鄰近）有一段 水平距離，如以下參考第3A與第3B圖之進一步描述。 第3 A與第3 B圖是研磨設備2 3 1的上視平面圖，如 使用第2 A至第2C圖的本發明之研磨漿/清洗臂_2 1 1的化 學機械研磨器。第3 A與第3 B圖分別顯示研磨漿/清洗臂 2 Π在研磨位置及清洗位置=研磨設備2 3 1，除了研磨漿 /清洗臂2 1 1之外，其裝配與操作都與傳統的第1圖之研 磨設備相同。因此，與第1圖相似的零件和第1圖的參 考數字一致，且不重複敘述其結構細節3 運作時，自動化的鉸鏈2 2 9轉動，將手臂2 1 3置於研 磨位置。當位於研磨位置時，手臂2 1 3遠離研磨塾1 7之 中心=因此，基板裝設頭2 9與調節頭2 3，能在研磨墊1 7 的中心與邊緣之間自由地掃描，而不被手臂 2 1 3阻礙。 最好在研磨位置時，手臂2 1 3提供基板裝設頭2 9與調節 頭2 3二者最大的掃描自由度，但將研磨漿/清洗臂211 放在適當位置，以便供給研磨漿至溝槽1 9。第一研磨漿 供給線與第二研磨漿供給線都是水平彎角1向内朝向研 磨墊1 7的中心，以致於將研磨漿置於遠離研磨墊1 7的 邊緣。最好將研磨漿傳送到溝槽1 9的中央區域。 平台丨5與位於其上之研磨墊1 7於是開始旋轉，基板 S被放置到基板裝設頭2 9的下惻，並倚靠著旋轉的研磨 第m頁 本纸張尺度適用申國國家標準（CNSM1規格（21U心97公S ) ------------i --------訂·-------- (請先閱讀背面之立意事項再填寫本頁) 4 3 4 1 1 3 λ7 ______ ^ 五、發明說明（） 墊1 7被施塾。經由第一砰磨漿出口 2丨7;1和/或萬二岍磨 漿出口 2 1 7 b將研磨漿導入研磨塾1 7，此時基板裝設頭& 在研磨墊1 7的邊緣與中心之間掃描，帶著基板s來回赞 過溝槽1 9 ’且研磨痕在溝槽中輸送。研磨漿與研磨整丨7 之旋轉表面，將物質從基板s的表面磨掉’藉此平面化 或研磨該基板S。同時，轉軸臂21以弧形運動的方式來 回掃描，使研磨墊1 7之表面再粗链。 從基板S移除之物質與被基板裝設頭2 9加壓壓緊的 研磨漿，必須定期從研磨墊1 7清除，以避免這些粒子刮 傷基板S的表面=於是，最好在每一片基板S研磨後清 洗研磨墊1 7。如此頻繁的清洗是可能的，因為，在清洗 位置時，本發明之研磨漿/清洗臂2 Π延伸橫跨基板§的 整個半徑範圍，並且最好包含非必須之刷子223 ,能^ 許在較短的一段時間内清洗更完全，並消耗較少清洗_ 研磨完畢之後，轉軸臂2 1與基板裝設頭29兩者都^ 研磨墊17的表面升起，而鉸鏈229旋轉，將手背2l3法 於清洗位置，以致該手臂2 1 3從研磨墊1 7的邊綠延伸^ 研磨墊1 7的中心。鉸鏈22 9接著降低手臂2 1 3，估 必須之刷子2 2 3接觸研磨墊1 7。倘若研磨墊！ 7 經濟部智慧財產局員工消費合作社印- 長面 與非必須之刷子2 2 3的表面不平行’則非必須之刷；、 J 于 223 會以萬向接頭224為中心旋轉。因此，非必須之刷；、 J 223 會保持與研磨墊1 7的邊緣至中心均勻地接觸。 經由與研磨漿/清洗臂2 1丨耦合之清洗液供應線3 , n 將清洗液供給至研磨墊丨7。平台15最好朝向听磨衆/清 第II頁 本纸張尺度適用中g國家標準（CNS)A4規丨& (_;丨1) X _297 ) 經濟部智"时產局鋒'工消费合作社印製 434113 __I£___ 五、發明說明（） 洗臂2 ! 1旋轉，以致研磨墊1 7的表面觸及刷子2 2 3時， 由於清洗液噴嘴供給清洗液而沾濕該研磨墊表面。從研 磨漿/清洗背2 1 1喷出之清洗液的能量，與來自非必須之 刷子2 2 3的能量，在平台〗5旋轉時，從研磨墊1 7的整 個表面（邊緣到中心）及溝槽1 9，將粒子與被壓緊的研磨 漿掃除。 刷子噴嘴2 2 5將來自清洗液供給線2 1 9，或額外之供 給線的清洗液導入刷予2 2 3。來自刷子喷嘴2 2 5的清洗 液，將可能集中在刷子223的粒子與研磨漿清除。從刷 子223釋出之粒子與研磨漿，藉由向心力流出研磨墊1 7。 研磨墊1 7的整個表面，因此快速而有效地清除不要的粒 子與研磨漿塊。另一種已證明可提供較優良缺陷層之具 體化實施例，在第4圖中顯示。 第4圖是使用預濕潤喷嘴2 3 3之本發明研磨漿/清洗 臂 2 I 1之具體化實施例的側面正視圖。預濕潤噴嘴 2 3 3 取代了第2 A至3 B圖的刷子喷嘴2 2 5，並最好是有切角 的（例如7 0度），以指向遠離研磨漿/清洗臂2 1 1或其前方 的方向。在操作上，當研磨漿/清洗臂2 I 1就研磨位置時， 使用預濕潤噴嘴2 3 3。預濕潤喷嘴2 3 3噴灑清洗液到研 磨墊1 7 —小段時間（如5秒鐘）之後，在研磨漿/清洗臂2 1 1 移到清洗位置時關閉，在該處使用清洗液噴嘴22 1 »藉 此方式預濕潤研磨墊，已發現較少缺陷發生在隨後研磨 的晶圓。 前述僅揭露本發明之較佳具體化實施例，本發明範圍 第！2頁 本紙張尺变適用中囤國家標車（CNS)A.l規格（LMU X 297 β S ) -------------裝'-------訂·--------線 (請先閱讀背面之-意事項再填寫本頁) 經濟卽智慧財產局員工消費合作社印製 4 3 4 113 a； _B7___五、發明說明（） 内的上述設備與方法之改良，對習知技藝者將是顯而易 」 見的。舉例而言，在實施本發明時（i m p I e m e n t i n g )可能可 大幅改變研磨漿/清洗背的結構。研磨漿/清洗背可能垂直 旋轉，在與研磨漿研磨的期間取得垂直位置，而該研磨 漿由手臂的較低部分供應到研磨墊。清洗液出口可能包 含一種或多種噴嘴，在清洗步驟期間掃描研磨墊的半徑 範圍；或是手臂可能延伸較長，在清洗時橫跨研磨墊的 整個直徑範圍，因此更降低清洗的循環時間（c y c 1 e t i m e)。 此外，代替研磨漿/清洗臂底部與手臂部分鏈的耦合，底 部與手臂部分可能可以固定連結，而底部本身可能可以 旋轉、升高和降低手臂部分。能提供足夠的喷霧，以均 勻清洗研磨墊或刷子之任何型式的噴嘴都可使用（如線 型噴嘴、多重的扇型噴嘴），並能設計成直線式或彎角 式噴霧。最後，在此描述之研磨器僅只是示範性的，其 他的研磨器結構（例如以轉化帶（t r an s I ati n g b a n d)形式使 用研磨塾者，等等）也可能受惠於本發明。 因此，雖然本發明與其相關的較佳具體化實施例已揭 露，需知其他的具體化實施例也可能符合如以下申請專 利範圍所定義之本發明的精神與範圍。 ------------"裝·-------訂---------線 (請先間:#背面之注意事項再填寫本百' ) 第13頁 本紙張尺度適用中0國家標準（CNSM-1規格（21ϋ X 297公坌>-1T Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 43 4 1 1 3 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7 V. Description of the invention () After grinding. However, such frequent cleaning will increase the consumption cost of the cleaning liquid and reduce the total output of the grinding device 11. Therefore, there is a need for an improved grinding system to provide a more efficient and lower cost grinding and cleaning method. SUMMARY OF THE INVENTION The present invention provides an apparatus for grinding semiconductor substrates. The equipment includes a rotatable platform, a polishing pad mounted on the rotatable platform, and a slurry / washing arm with dual positions. This slurry / washing arm has a slurry supply line with a slurry outlet and a cleaning liquid supply line with a cleaning liquid outlet. The grinding slurry / washing arm is coupled to the rotatable platform via a mechanism that moves the arm between the grinding position and the cleaning position. The grinding position is where the grinding slurry / washing arm supplies the grinding slurry from a position far from the center of the polishing pad. To the location of the polishing pad, and the cleaning position is the location where the polishing slurry / washing arm supplies cleaning liquid to the center of the polishing pad. In the cleaning position, the polishing slurry / cleaning arm is preferably located above or near the center of the polishing pad, so that the cleaning liquid can be sprayed on the center of the polishing pad (that is, the position where the cleaning liquid is supplied directly to the center of the polishing pad). Preferably, the grinding slurry supply line can be horizontally bent at different angles, that is, it has a horizontal angle (angled h 〇ri ζ ο nta 丨 1 y), and when the arm is in the grinding position, it is at the center of the grinding 蛰There is a horizontal distance. Because the slurry / cleaning arm can be placed in a dual position, the arm can be installed and placed in an appropriate position to achieve the best cleaning effect 'without being restricted by the path of the adjustment head or substrate mounting head. Therefore, the paper size of the present invention is applicable to the Chinese National Standard (CNS) A4 specification ~ (Please read the notes on the back before filling in this card) Printed by the staff of the Intellectual Property Office of the Ministry of Economic Affairs and Cooperatives 434 1 13 at B7 five ' Description of the invention () The polishing slurry / cleaning back of the polishing equipment is used to supply the cleaning liquid across the entire radius of the listening pad, which is similar to the traditional polishing equipment that fixed the polishing slurry / washing arm and cannot reach the center of the polishing pad. Lower, can provide better cleaning. In a first embodiment, the cleaning liquid outlet includes a linear nozzle that sends out a spray that extends from the edge of the polishing pad to at least the center of the polishing pad, or contains a plurality of cleaning liquid nozzles, the spray of which is preferably uniform from the polishing pad The edges extend to at least the center of the polishing pad. In this way, when the polishing pad is rotated, the entire polishing pad can be cleaned. In another embodiment, the cleaning nozzle may extend across the entire diameter of the polishing pad to reduce the cleaning time, or the cleaning liquid outlet may scan back and forth from the edge to the center of the polishing pad. In a second embodiment, the grinding slurry / washing arm includes a 塾 -shaped brush (p a d b r u s h) which engages with the arm so that when the arm is in the cleaning position, it will contact the grinding 塾. Therefore, the arm is lower in the cleaning position than it is in the grinding position. The pad brush can accelerate the rate of particle removal and loosen the compacted particles from the groove of the pad. If there is only a cleaning nozzle there, Either the particles cannot be removed, or a relatively long cleaning time and / or a large amount of cleaning liquid is required to remove the particles. In spite of the wear, in order to maintain uniform contact with the substrate, the pad brush is preferably coupled to the arm with a universal joint. In a further embodiment, one or more cleaning liquid nozzles are used and placed at a position where the cleaning liquid is introduced into the pad brush (ie, the brush nozzle (brush η ο zz 1 e)) to prevent particles from being collected in In the brush, or (please read the notes on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 specifications (210 X) 134113- printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () The cleaning liquid nozzle is placed in the position where the cleaning liquid is introduced into the front of the pad brush (that is, the pre-wetting, wetting nozzle (prewe 11 ing η zz 1 e)), to pre-wet the abrasive surface And help the cleaning of the pad brush = the brush nozzle and the pre-moistening nozzle are best to individually face or away from the pad brush at an angle of 70 degrees from the normal, and the bristles of the brush are preferably made according to the size suitable for the smallest groove ( (Eg grooves created by adjusting heads). A dense nylon brush with bristles of 0.05 inches in diameter is currently the preferred cleaning effect. Therefore, the semiconductor polishing equipment of the present invention is equipped with a dual-position polishing slurry / washing arm, optional pad brush, and optional brush nozzles, which enables faster and more complete polishing from conventional semiconductor polishing equipment. The center and abrasive grooves remove particles and use less cleaning fluid. Other objects, features, and advantages of the present invention will be more apparent from the preferred embodiments detailed below, the scope of additional patent applications, and accompanying drawings. Brief description of the figure: Figure 1 is a top plan view of the outline of a conventional chemical mechanical polishing device as described previously; Figures 2A and 2B are front and side front views of a dual-position polishing slurry / washing arm of the present invention, respectively. (Side elevational view); Figure 2C is a top plan view of the polishing slurry / cleaning arm of the present invention shown in Figures 2A and 2B; Figures 3A and 3B are polishing slurry / cleaning of the present invention using Figure 2 AC Arm, for the outline of the equipment for grinding semiconductor substrate S. Above view plane-This paper size applies the Chinese National Standard (CNS) Α4 specification (210〆297 mm) (Please read the precautions on the back before filling this page) 43 4 113 at ____ Π7 ___ Five description of the invention () Figure, "Do not show the slurry / washing arm in the honing position and the cleaning position; Figure 4 shows the slurry / cleaning f of the present invention using a pre-wetting nozzle. A side elevation view of an embodiment of the embodiment. Drawing number comparison description 11 15 17 19 21 23 2 5 27a 29 S, S, 211 213 215a '215b 217a, 217b 2 19 221, 225 223 224 Page S Adjusting head polishing slurry / washing arm polishing pad regulator substrate mounting head substrate polishing slurry W blue wash arm arm first and second polishing slurry supply line first and second polishing slurry outlet cleaning liquid supply line cleaning liquid spray 11 yellow brush Universal joint ------------- install * ------- order --------- line f please read-note on the back before filling this page) The size of this paper is suitable for Chinese R family standard (CNS) Al regulations (210 497 K complexes) • \ i • \ i Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 434 1 1 3 _ V. Description of the invention () 227 Base 229 Hinge 23 1 Grinding equipment 233 Pre-wetting nozzle 235 Brush nozzle Detailed description of the invention: Figures 2A and 2B are front and front views respectively, and Figure 2C is a dual-position grinding slurry according to the present invention / A preferred top plan view of the cleaning arm 2 Π. The lapping / washing arm 2 1 1 includes an arm 2 1 3, and a first grinding slurry supply line 2 1 5 a and a second grinding slurry supply line 2 1 5 b extend therethrough. The first slurry supply line 2 1 5 a has a first slurry outlet 2 1 7 a, and the second slurry supply line 2 1 5 b has a second slurry outlet 2 1 7 b = first and second slurry The supply lines are all horizontally curved, so that the polishing slurry is guided inward to the center of the polishing pad 17 as shown in Figures 3A and 3B. ° Cleaning liquid with cleaning liquid outlet such as cleaning liquid nozzle 2 2 I The supply line 2 1 9 is also coupled to the arm 2 1 3. The optional (〇 p t i ο n a 1) brush 2 2 3 extends along the bottom of the arm 2 1 3. Preferably, the optional brush 2 2 3 is coupled to the arm 2 1 3 through a universal joint 224. The universal joint 224 allows the brush to rotate so that the surface of the brush and the grinding surface 17 (Figure 1) can be kept in uniform contact regardless of whether the wheel gallery of the grinding # or the temple of the brush changes. The unnecessary cleaning liquid nozzle 225 is coupled to the arm 2 1 3 so as to guide the cleaning liquid into the unnecessary brush 2 2 3 (ie, the brush nozzle). The arm 2 is coupled to the base 2 2 7 by an automatically controlled hinge 2 2 9. Page 9 This paper size applies to China® Home Standard (CNS) A] Regulation U10 > ^ 97)) ------ ------- Installation -------- Order --------- line (please read the precautions on the back before filling this page) Printed by the Industrial and Consumer Goods Cooperative 434 1 1 3 < A7 _____IJ7____ V. Description of the invention () When the hinge is in operation, move the arm 2 丨 3 back and forth between the grinding position and the cleaning position. As further described below, it is best that the grinding position is horizontally adjacent to the cleaning position. In this case, the arm 2 1 3 is placed at a level from the center of the grinding pad (preferably above or adjacent to the center of the pad radius) during grinding. The distance is further described below with reference to FIGS. 3A and 3B. Figures 3A and 3B are top plan views of the grinding equipment 2 3 1, such as a chemical mechanical grinder using the polishing slurry / washing arm _2 1 1 of the present invention shown in Figures 2 A to 2C. Figures 3 A and 3 B show the grinding slurry / washing arm 2 Π at the grinding position and the cleaning position = grinding equipment 2 3 1 except that the grinding slurry / washing arm 2 1 1 has the same assembly and operation as the traditional The grinding equipment in Fig. 1 is the same. Therefore, the parts similar to those in Figure 1 and the reference numbers in Figure 1 are the same, and the structural details are not repeated. 3 During operation, the automated hinge 2 2 9 rotates, and the arm 2 1 3 is placed in the grinding position. When in the polishing position, the arm 2 1 3 is far away from the center of the polishing pad 17 = Therefore, the substrate mounting head 2 9 and the adjustment head 2 3 can scan freely between the center and the edge of the polishing pad 17 without Obstructed by arm 2 1 3. In the grinding position, the arm 2 1 3 provides the maximum scanning freedom of the substrate mounting head 2 9 and the adjustment head 2 3, but the polishing slurry / cleaning arm 211 is placed in an appropriate position to supply the polishing slurry to the groove. Slots 1 to 9. Both the first slurry supply line and the second slurry supply line are horizontally angled 1 toward the center of the polishing pad 17 inward, so that the polishing slurry is placed on the edge away from the polishing pad 17. Preferably, the slurry is transferred to the central area of the groove 19. The platform 5 and the polishing pad 17 located thereon started to rotate, and the substrate S was placed on the lower surface of the substrate mounting head 29, and leaned against the rotating polishing. CNSM1 specifications (21U heart 97 male S) ------------ i -------- Order · -------- (Please read the intention on the back before filling (This page) 4 3 4 1 1 3 λ7 ______ ^ V. Description of the invention () The pad 1 7 is applied. Via the first bang refining outlet 2 丨 7; 1 and / or Wanji refining outlet 2 1 7 b The polishing slurry is introduced into the polishing pad 17, and at this time, the substrate mounting head & scans between the edge and the center of the polishing pad 17, and carries the substrate s to and fro through the groove 1 9 'and the grinding marks are conveyed in the groove. Grinding slurry and grinding the rotating surface of the grinding surface to grind off the surface of the substrate s, thereby planarizing or grinding the substrate S. At the same time, the rotating shaft arm 21 scans back and forth in an arc-shaped manner, so that the polishing pad 1 The surface of 7 is then roughened. The material removed from the substrate S and the polishing head pressed by the substrate mounting 2 9 must be regularly removed from the polishing pad 1 7 to prevent these particles from scratching the surface of the substrate S = Yes, it is best to clean the polishing pad 17 after polishing each substrate S. Such frequent cleaning is possible because, in the cleaning position, the polishing slurry / cleaning arm 2 of the present invention extends across the entire radius of the substrate § Range, and it is better to include optional brushes 223, which can clean more completely in a short period of time and consume less cleaning. _ After the grinding is completed, both the rotary arm 21 and the substrate mounting head 29 ^ The surface of the polishing pad 17 is raised, and the hinge 229 is rotated, so that the back of the hand 21 is placed in the cleaning position, so that the arm 2 1 3 extends from the edge of the polishing pad 17 to the center of the polishing pad 17 7. The hinge 22 9 then lowers the arm 2 1 3, it is estimated that the brush 2 2 3 is in contact with the polishing pad 1 7. If the polishing pad! 7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-The long side is not parallel to the surface of the optional brush 2 2 3 The brush; J at 223 will rotate around the universal joint 224. Therefore, the brush is not required; the J 223 will keep uniform contact with the edge to the center of the polishing pad 17. Through the slurry / washing arm 2 1 丨 Coupled cleaning liquid supply line 3, n will The cleaning solution is supplied to the polishing pad. 7. The platform 15 is best oriented to the listener / clear page II. The paper standard is applicable to the national standard (CNS) A4 regulation. &Amp;(_; 丨 1) X _297) Ministry of Economic Affairs Zhi " Printed by the Industrial and Commercial Bureau 'Industrial and Consumer Cooperative Co., Ltd. 434113 __I £ ___ 5. Description of the invention () Washing arm 2! 1 rotates, so that the surface of the polishing pad 17 touches the brush 2 2 3, because the cleaning liquid nozzle is supplied for cleaning Liquid and wet the surface of the polishing pad. The energy of the cleaning liquid sprayed from the polishing slurry / cleaning back 2 1 1 and the energy from the non-essential brushes 2 2 3, when the platform 5 rotates, from the entire surface (edge to center) of the polishing pad 17 The grooves 19 and 9 sweep the particles and the compacted slurry. The brush nozzle 2 2 5 directs the cleaning liquid from the cleaning liquid supply line 2 1 9 or the additional supply line to the brush 2 2 3. The cleaning liquid from the brush nozzle 2 2 5 removes particles and abrasive slurry that may be concentrated in the brush 223. The particles and polishing slurry released from the brush 223 flow out of the polishing pad 17 by a centripetal force. The entire surface of the polishing pad 17 is thus quickly and efficiently removed of unwanted particles and polishing pads. Another embodiment which has proven to provide a better defect layer is shown in FIG. Fig. 4 is a side elevation view of a specific embodiment of the slurry / washing arm 2 I 1 of the present invention using a pre-wetting nozzle 2 3 3. The pre-moistening nozzle 2 3 3 replaces the brush nozzle 2 2 5 in Figs. 2 A to 3 B, and preferably has a chamfered angle (eg 70 degrees) to point away from the slurry / washing arm 2 1 1 or Forward direction. In operation, when the slurry / washing arm 2 I 1 is in the grinding position, a pre-wetting nozzle 2 3 3 is used. Pre-wetting nozzle 2 3 3 Spray the cleaning liquid onto the polishing pad 17 — After a short period of time (such as 5 seconds), close the slurry / washing arm 2 1 1 when it moves to the cleaning position, and use the cleaning liquid nozzle 22 1 »Pre-wetting the polishing pad in this way, it has been found that fewer defects occur on subsequent wafers. The foregoing only discloses preferred embodiments of the present invention, and the scope of the present invention is the first! 2 pages of this paper rule change applicable to the national standard car (CNS) Al specifications (LMU X 297 β S) ------------- installed '------- ordered --- ------ line (please read the-Italian notice on the back before filling this page) printed by the Economic and Intellectual Property Bureau employee consumer cooperatives 4 3 4 113 a; _B7___ V. The above equipment in the description of the invention () and The improvement of the method will be obvious and obvious to the skilled artist ". For example, when implementing the present invention (i m p I e m en t i n g), the structure of the polishing slurry / cleaning back may be significantly changed. The slurry / washing back may rotate vertically, taking a vertical position during grinding with the slurry, which is supplied to the polishing pad by the lower part of the arm. The cleaning solution outlet may contain one or more nozzles that scan the radius of the polishing pad during the cleaning step; or the arm may extend longer and span the entire diameter range of the polishing pad during cleaning, thus reducing the cleaning cycle time (cyc 1 etime). In addition, instead of coupling the mortar / washing arm bottom to the arm part chain, the bottom part and the arm part may be fixedly connected, and the bottom part itself may be able to rotate, raise and lower the arm part. Any type of nozzle that provides sufficient spray to evenly clean the polishing pad or brush (such as linear nozzles, multiple fan nozzles) can be used, and can be designed as a straight or angled spray. Finally, the grinders described herein are merely exemplary, and other grinder structures (such as those using grindstones in the form of conversion belts, etc.) may also benefit from the present invention. Therefore, although the present invention and its related preferred embodiments have been disclosed, it should be understood that other embodiments may also conform to the spirit and scope of the present invention as defined by the following patent scope. ------------ " Installation ---------- Order --------- line (please first: #Notes on the back before filling in this hundred ') Page 13 This paper size applies to the 0 national standard (CNSM-1 specification (21ϋ X 297 public 坌 >