TWI341554B - Copper metallization of through silicon via - Google Patents

Copper metallization of through silicon via

Info

Publication number
TWI341554B
TWI341554B TW097129380A TW97129380A TWI341554B TW I341554 B TWI341554 B TW I341554B TW 097129380 A TW097129380 A TW 097129380A TW 97129380 A TW97129380 A TW 97129380A TW I341554 B TWI341554 B TW I341554B
Authority
TW
Taiwan
Prior art keywords
silicon via
copper metallization
metallization
copper
silicon
Prior art date
Application number
TW097129380A
Other languages
English (en)
Other versions
TW200924036A (en
Inventor
Thomas B Richardson
Yun Zhang
Chen Wang
Vincent Paneccasio
Cai Wang
Xuan Lin
Richard Hurtubise
Joseph A Abys
Original Assignee
Enthone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enthone filed Critical Enthone
Publication of TW200924036A publication Critical patent/TW200924036A/zh
Application granted granted Critical
Publication of TWI341554B publication Critical patent/TWI341554B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW097129380A 2007-08-02 2008-08-01 Copper metallization of through silicon via TWI341554B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95360207P 2007-08-02 2007-08-02
US5903908P 2008-06-05 2008-06-05

Publications (2)

Publication Number Publication Date
TW200924036A TW200924036A (en) 2009-06-01
TWI341554B true TWI341554B (en) 2011-05-01

Family

ID=40304935

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097129380A TWI341554B (en) 2007-08-02 2008-08-01 Copper metallization of through silicon via

Country Status (7)

Country Link
US (1) US7670950B2 (zh)
EP (1) EP2183769B8 (zh)
JP (1) JP2010535289A (zh)
KR (1) KR101529342B1 (zh)
CN (1) CN101855714B (zh)
TW (1) TWI341554B (zh)
WO (1) WO2009018581A1 (zh)

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Also Published As

Publication number Publication date
JP2010535289A (ja) 2010-11-18
EP2183769A1 (en) 2010-05-12
CN101855714A (zh) 2010-10-06
WO2009018581A1 (en) 2009-02-05
KR101529342B1 (ko) 2015-06-19
CN101855714B (zh) 2013-05-08
EP2183769B1 (en) 2017-07-19
EP2183769A4 (en) 2015-12-09
KR20100055446A (ko) 2010-05-26
EP2183769B8 (en) 2017-08-23
US20090035940A1 (en) 2009-02-05
TW200924036A (en) 2009-06-01
US7670950B2 (en) 2010-03-02

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