TWI340464B - Solid-state imaging device - Google Patents

Solid-state imaging device

Info

Publication number
TWI340464B
TWI340464B TW095143738A TW95143738A TWI340464B TW I340464 B TWI340464 B TW I340464B TW 095143738 A TW095143738 A TW 095143738A TW 95143738 A TW95143738 A TW 95143738A TW I340464 B TWI340464 B TW I340464B
Authority
TW
Taiwan
Prior art keywords
solid
imaging device
state imaging
state
imaging
Prior art date
Application number
TW095143738A
Other languages
English (en)
Chinese (zh)
Other versions
TW200733371A (en
Inventor
Kazuichiro Itonaga
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200733371A publication Critical patent/TW200733371A/zh
Application granted granted Critical
Publication of TWI340464B publication Critical patent/TWI340464B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
TW095143738A 2005-12-05 2006-11-27 Solid-state imaging device TWI340464B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005351368A JP5320659B2 (ja) 2005-12-05 2005-12-05 固体撮像装置

Publications (2)

Publication Number Publication Date
TW200733371A TW200733371A (en) 2007-09-01
TWI340464B true TWI340464B (en) 2011-04-11

Family

ID=38119393

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095143738A TWI340464B (en) 2005-12-05 2006-11-27 Solid-state imaging device

Country Status (5)

Country Link
US (5) US8507960B2 (enExample)
JP (1) JP5320659B2 (enExample)
KR (1) KR101323544B1 (enExample)
CN (1) CN1979883B (enExample)
TW (1) TWI340464B (enExample)

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* Cited by examiner, † Cited by third party
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JP5320659B2 (ja) * 2005-12-05 2013-10-23 ソニー株式会社 固体撮像装置
US7521278B2 (en) * 2006-10-17 2009-04-21 Eastman Kodak Company Isolation method for low dark current imager
US8072015B2 (en) 2007-06-04 2011-12-06 Sony Corporation Solid-state imaging device and manufacturing method thereof
JP5292787B2 (ja) * 2007-11-30 2013-09-18 ソニー株式会社 固体撮像装置及びカメラ
EP2109143B1 (en) * 2008-04-09 2013-05-29 Sony Corporation Solid-state imaging device, production method thereof, and electronic device
JP2009277722A (ja) * 2008-05-12 2009-11-26 Panasonic Corp 固体撮像装置及びその製造方法
EP2445008B1 (en) * 2008-08-11 2015-03-04 Honda Motor Co., Ltd. Imaging device and image forming method
JP5444694B2 (ja) 2008-11-12 2014-03-19 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
MX2011006316A (es) * 2008-12-16 2011-09-01 Hiok Nam Tay Sensores de imagen de cancelacion de ruido.
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
FR2954587B1 (fr) * 2009-11-10 2012-07-20 St Microelectronics Sa Procede de formation d'un capteur d'images eclaire par la face arriere
JP2011114302A (ja) 2009-11-30 2011-06-09 Sony Corp 半導体素子の製造方法及び半導体素子、並びに固体撮像素子及び固体撮像装置
JP5621266B2 (ja) 2010-01-27 2014-11-12 ソニー株式会社 固体撮像装置とその製造方法、並びに電子機器
JP5810575B2 (ja) * 2011-03-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
US8883544B2 (en) * 2012-05-04 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming an image device
CN103383947B (zh) * 2012-05-04 2016-06-08 台湾积体电路制造股份有限公司 图像装置及其形成方法
WO2014002361A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
US20140110805A1 (en) 2012-10-18 2014-04-24 Infineon Technologies Dresden Gmbh Silicon light trap devices, systems and methods
JP2014187270A (ja) * 2013-03-25 2014-10-02 Sony Corp 固体撮像装置およびその製造方法、並びに電子機器
US8957490B2 (en) * 2013-06-28 2015-02-17 Infineon Technologies Dresden Gmbh Silicon light trap devices
JP6121837B2 (ja) * 2013-08-02 2017-04-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子
CN104517976B (zh) * 2013-09-30 2018-03-30 中芯国际集成电路制造(北京)有限公司 Cmos图像传感器的像素结构及其形成方法
JP5725232B2 (ja) * 2014-04-21 2015-05-27 ソニー株式会社 固体撮像装置及びカメラ
JP2016001709A (ja) * 2014-06-12 2016-01-07 キヤノン株式会社 固体撮像装置の製造方法
JP2016046336A (ja) * 2014-08-21 2016-04-04 ソニー株式会社 固体撮像素子および製造方法、並びに放射線撮像装置
CN107195645B (zh) * 2016-03-14 2023-10-03 松下知识产权经营株式会社 摄像装置
CN109244088B (zh) * 2017-07-10 2022-02-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法、电子装置
KR102542614B1 (ko) * 2017-10-30 2023-06-15 삼성전자주식회사 이미지 센서
TWI834644B (zh) * 2018-05-18 2024-03-11 日商索尼半導體解決方案公司 攝像元件及電子機器
KR102785835B1 (ko) * 2020-05-25 2025-03-26 에스케이하이닉스 주식회사 이미지 센싱 장치
CN112885931B (zh) * 2021-01-08 2022-09-06 广东顺德侨安电子有限公司 一种光电转换装置的形成方法

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Publication number Priority date Publication date Assignee Title
JP2000353801A (ja) * 1999-06-14 2000-12-19 Mitsubishi Electric Corp 固体撮像素子を有する半導体装置およびその製造方法
JP2002050753A (ja) 2000-08-04 2002-02-15 Innotech Corp 固体撮像素子、その製造方法及び固体撮像装置
JP2002270808A (ja) * 2001-03-13 2002-09-20 Matsushita Electric Ind Co Ltd Ｍｏｓ型撮像装置
JP2003218337A (ja) * 2002-01-18 2003-07-31 Mitsubishi Electric Corp イメージセンサ
US7217601B1 (en) * 2002-10-23 2007-05-15 Massachusetts Institute Of Technology High-yield single-level gate charge-coupled device design and fabrication
JP4297416B2 (ja) * 2003-06-10 2009-07-15 シャープ株式会社 固体撮像素子、その駆動方法およびカメラ
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法
KR100603247B1 (ko) * 2003-12-31 2006-07-20 동부일렉트로닉스 주식회사 시모스 이미지 센서 및 그 제조방법
JP4539176B2 (ja) * 2004-05-31 2010-09-08 ソニー株式会社 固体撮像素子及びその製造方法
JP4595464B2 (ja) * 2004-09-22 2010-12-08 ソニー株式会社 Ｃｍｏｓ固体撮像素子の製造方法
JP4742602B2 (ja) * 2005-02-01 2011-08-10 ソニー株式会社 固体撮像装置及びその製造方法
JP5320659B2 (ja) * 2005-12-05 2013-10-23 ソニー株式会社 固体撮像装置

Also Published As

Publication number Publication date
KR101323544B1 (ko) 2013-10-29
US9887226B2 (en) 2018-02-06
US20070128954A1 (en) 2007-06-07
US8507960B2 (en) 2013-08-13
US20180138217A1 (en) 2018-05-17
CN1979883B (zh) 2012-10-31
JP2007158031A (ja) 2007-06-21
TW200733371A (en) 2007-09-01
US20160204148A1 (en) 2016-07-14
US9640573B2 (en) 2017-05-02
US20130299887A1 (en) 2013-11-14
JP5320659B2 (ja) 2013-10-23
CN1979883A (zh) 2007-06-13
US9318523B2 (en) 2016-04-19
KR20070058991A (ko) 2007-06-11
US20170194369A1 (en) 2017-07-06

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