CN112885931B - 一种光电转换装置的形成方法 - Google Patents

一种光电转换装置的形成方法 Download PDF

Info

Publication number
CN112885931B
CN112885931B CN202110022527.4A CN202110022527A CN112885931B CN 112885931 B CN112885931 B CN 112885931B CN 202110022527 A CN202110022527 A CN 202110022527A CN 112885931 B CN112885931 B CN 112885931B
Authority
CN
China
Prior art keywords
type
region
gate electrode
doping
reset
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110022527.4A
Other languages
English (en)
Other versions
CN112885931A (zh
Inventor
尤小月
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Shunde Qiao'an Electronics Co Ltd
Original Assignee
Guangdong Shunde Qiao'an Electronics Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong Shunde Qiao'an Electronics Co ltd filed Critical Guangdong Shunde Qiao'an Electronics Co ltd
Priority to CN202110022527.4A priority Critical patent/CN112885931B/zh
Publication of CN112885931A publication Critical patent/CN112885931A/zh
Application granted granted Critical
Publication of CN112885931B publication Critical patent/CN112885931B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

一种光电转换装置的形成方法，包括：提供P‑型半导体衬底；N‑型光电二极管掺杂区，P+型空穴累积区，N型电荷保持区，P型电荷阻挡区，位于栅极绝缘层上方的传输栅电极、倍增栅电极、读取栅电极，复位栅电极结构，悬浮掺杂区，包括N+型子悬浮掺杂区和N‑型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N‑型子悬浮掺杂区，N+型复位漏极区，可有效抑制了N‑型光电二极管掺杂区至N+型复位漏极区的漏电，提高电学性能。

Description

一种光电转换装置的形成方法
技术领域
本发明涉及半导体制造领域，尤其涉及一种光电转换装置及其形成方法。
背景技术
光电转换装置的原理是光子将能量传递给电子使其运动从而形成电流，可用于固态成像装置。被摄景物通过摄像机的光学系统在光电靶上成像，由于光像各点亮度不同，因而使靶面各单元受光照的强度不同，导致靶面各单元的电阻值不同。与较亮像素对应的靶单元阻值较小，与较暗像素对应的靶单元阻值较大，这样一幅图像上各像素的不同亮度就表现为靶面上各单元的不同电阻值，原来按照明暗分布的“光像”就变成了相应的“电像”。
然而，现有的图像传感器的电学性能仍有待提高。
发明内容
本发明解决的问题是提供一种光电转换装置及其形成方法，可获得优良的电学性能，应用于固态成像装置，以提高稳定性。
为解决上述问题，本发明提供一种光电转换装置，包括：P-型半导体衬底；
N-型光电二极管掺杂区，设置于所述P-型半导体衬底中，P+型空穴累积区设置在所述N-型光电二极管掺杂区和所述P-型半导体衬底的上表面之间；
N型电荷保持区，设置于所述P-型半导体衬底中，P型电荷阻挡区设置在所述N型电荷保持区和所述P-型半导体衬底的上表面之间；
位于所述P型电荷阻挡区上方的栅极绝缘层，以及位于所述栅极绝缘层上方的传输栅电极、倍增栅电极、读取栅电极；
复位栅电极结构，设置于所述P-型半导体衬底中，包括复位栅电极和复位栅电极绝缘层；
悬浮掺杂区，设置于所述P-型半导体衬底中，包括N+型子悬浮掺杂区和N-型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区；
N+型复位漏极区，设置于所述P-型半导体衬底中；
所述N+型复位漏极区和所述N型电荷保持区分别位于所述复位栅电极结构的两侧，所述悬浮掺杂区位于所述复位栅电极结构的下方，所述悬浮掺杂区和所述N-型光电二极管掺杂区分别位于所述N型电荷保持区的两侧。
可选的，所述N+型子悬浮掺杂区和所述N-型子悬浮掺杂区为磷杂质掺杂，所述N+型子悬浮掺杂区的杂质浓度为5.0×1017cm-3，所述N-型子悬浮掺杂区的杂质浓度为5.0×1016cm-3。
可选的，所述N+型复位漏极区电连接电源线。
可选的，所述N-型光电二极管掺杂区、所述N型电荷保持区、所述悬浮掺杂区、所述N+型复位漏极区彼此相互分立。
可选的，所述复位栅电极结构的深度大于所述N+型复位漏极区的深度。
可选的，所述复位栅电极绝缘层包围所述复位栅电极的底部和侧壁。
本发明还提供一种固态成像装置，包括上述的光电转换装置。
本发明还提供一种光电转换装置的形成方法，包括：提供P-型半导体衬底；
在所述P-型半导体衬底形成一沟槽，在所述沟槽底部的P-型半导体衬底进行N型掺杂，形成悬浮掺杂区，所述悬浮掺杂区包括N+型子悬浮掺杂区和N-型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区；
在所述沟槽的底部和侧面形成复位栅电极绝缘层，在所述复位栅电极绝缘层上形成复位栅电极，所述复位栅电极绝缘层与所述复位栅电极组成复位栅电极结构；
在所述复位栅电极结构两侧的P-型半导体衬底中分别进行N型掺杂，形成N型电荷保持区和N+型复位漏极区，在所述N型电荷保持区相对于所述复位栅电极结构的另一侧进行N型掺杂，形成N-型光电二极管掺杂区；
在所述N-型光电二极管掺杂区和所述P-型半导体衬底的上表面之间进行P型掺杂，形成P+型空穴累积区；
在所述N型电荷保持区和所述P-型半导体衬底的上表面之间进行P型掺杂，形成P型电荷阻挡区；
在所述P型电荷阻挡区上方形成栅极绝缘层，在所述栅极绝缘层上方形成传输栅电极、倍增栅电极、读取栅电极。
可选的，所述N+型子悬浮掺杂区和所述N-型子悬浮掺杂区为磷杂质掺杂，所述N+型子悬浮掺杂区的杂质浓度为5.0×1017cm-3，所述N-型子悬浮掺杂区的杂质浓度为5.0×1016cm-3。
可选的，所述N+型复位漏极区电连接电源线。
可选的，所述N-型光电二极管掺杂区、所述N型电荷保持区、所述悬浮掺杂区、所述N+型复位漏极区彼此相互分立。
可选的，所述复位栅电极结构的深度大于所述N+型复位漏极区的深度。
可选的，可选的，所述复位栅电极绝缘层包围所述复位栅电极的底部和侧壁。
与现有技术相比，本发明的技术方案具有以下优点：
本发明技术方案提供的光电转换装置中，复位栅电极结构对应的复位晶体管的作用包括：N+型复位漏极区需要一直连接电源线，使得在清空时序步骤中，将复位栅电极结构对应的复位晶体管开启，对光电二极管中的电荷进行清空。在曝光时序步骤和读出时序步骤中，复位栅电极结构对应的复位晶体管需要关闭，避免清空光电二极管积累的光生电荷以及避免影响读出信号。复位栅电极结构制作在半导体衬底中，这样通过设置复位栅电极结构和N+型复位漏极区之间的深度关系，能够使N-型光电二极管掺杂区至N+型复位漏极区的沟道长度变长，这样有效抑制了N-型光电二极管掺杂区至N+型复位漏极区的漏电。
进一步，由于所述复位栅电极结构下方的半导体衬底中具有悬浮掺杂区，使得在悬浮掺杂区和N+型复位漏极区之间形成势垒，这样在N-型光电二极管掺杂区至N+型复位漏极区之间有两个势垒，一个是N-型光电二极管掺杂区至悬浮掺杂区之间的势垒，另一个是悬浮掺杂区和N+型复位漏极区之间的势垒。即使在N+型复位漏极区连接的电源线的电压较大的情况下，由于设置了悬浮掺杂区，使得在同等较大的电源线的电压的情况下，N-型光电二极管掺杂区至N+型复位漏极区之间的势垒的最高点提高，进一步，将悬浮掺杂区设置成包括N+型子悬浮掺杂区和N-型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区的结构，该最高点会被进一步提高，也就是说，N-型光电二极管掺杂区至悬浮掺杂区之间的势垒的最高点增大，这样进一步抑制了N-型光电二极管掺杂区至悬浮掺杂区的漏电。其次，即使在N-型光电二极管掺杂区中的电子越过N-型光电二极管掺杂区至悬浮掺杂区之间的势垒，由于悬浮掺杂区和N+型复位漏极区还存在势垒，因此那么这部分电子也不会直接流到N+型复位漏极区，而是会积累在悬浮掺杂区中，进一步，设置N+型子悬浮掺杂区和N-型子悬浮掺杂区，可积累的电子容量进一步增大，这样进一步抑制了N-型光电二极管掺杂区至N+型复位漏极区的漏电。因此对于改善暗光拍摄时图像质量有较好的效果。
附图说明
图1至图4是本发明中光电转换装置形成方法的示意图。
具体实施方式
将参考附图描述本公开的实施例。在下文中，将通过相同的附图标记表示附图中相互对应的部分。
图1至图4是本发明中光电转换装置形成方法的示意图。
如图1所示，提供一P-型半导体衬底10，在所述P-型半导体衬底10形成一沟槽。
如图2所示，在所述沟槽底部的P-型半导体衬底10进行N型掺杂，形成悬浮掺杂区13，所述N型掺杂采用诸如磷的杂质进行掺杂；所述悬浮掺杂区13包括N+型子悬浮掺杂区131和N-型子悬浮掺杂区132，所述N+型子悬浮掺杂区131包围所述N-型子悬浮掺杂区132；所述N+型子悬浮掺杂区131的杂质浓度为5.0×1017cm-3，所述N-型子悬浮掺杂区132的杂质浓度为5.0×1016cm-3。上述掺杂浓度可有效提高N-型光电二极管掺杂区至N+型复位漏极区之间的势垒，抑制N-型光电二极管掺杂区至N+型复位漏极区的漏电。
在所述沟槽的底部和侧面形成复位栅电极绝缘层26，在所述复位栅电极绝缘层26上形成复位栅电极25，所述复位栅电极绝缘层26包围所述复位栅电极25的底部和侧壁，所述复位栅电极绝缘层26与所述复位栅电极25组成复位栅电极结构。
如图3所示，在所述复位栅电极结构两侧的P-型半导体衬底10中分别进行N型掺杂，形成N型电荷保持区12和N+型复位漏极区14，在所述N型电荷保持区12相对于所述复位栅电极结构的另一侧进行N型掺杂，形成N-型光电二极管掺杂区11，所述N-型光电二极管掺杂区、所述N型电荷保持区、所述悬浮掺杂区、所述N+型复位漏极区彼此相互分立。
所述N型掺杂采用诸如磷的杂质进行掺杂，所述N型电荷保持区12的浓度高于所述N-型光电二极管掺杂区11，所述N型电荷保持区12表现出比围绕所述N型电荷保持区12的P-型半导体衬底10大的电位。入射到所述N-型光电二极管掺杂区11上的光由于光电转换被转换成了电荷，通过转移手段将所述N-型光电二极管掺杂区11中产生的电荷转移至所述N型电荷保持区12，之后，所述N型电荷保持区12暂时保持电荷，从所述N型电荷保持区12传送的电荷改变了悬浮掺杂区13的电位，所述N+型复位漏极区14电连接电源线， 以提供指定电位，在清空时序步骤中，将复位栅电极结构对应的复位晶体管开启，对光电二极管中的电荷进行清空，即复位操作将悬浮掺杂区13中存储的电荷清除至N+型复位漏极区14。悬浮掺杂区13保 持与N+型复位漏极区14相同的电位。
在所述N-型光电二极管掺杂区11和所述P-型半导体衬底10的上表面之间进行P型掺杂，形成P+型空穴累积区15。
在所述N型电荷保持区12和所述P-型半导体衬底10的上表面之间进行P型掺杂，形成P型电荷阻挡区16。所述N型电荷保持区12使得在所述P-型半导体衬底10的厚度方向上的电位被整形成量子阱，该量子阱的基底对应于所述N型电荷保持区12。
由于设置了悬浮掺杂区，使得在同等较大的电源线的电压的情况下，N-型光电二极管掺杂区至N+型复位漏极区之间的势垒的最高点提高，进一步，将悬浮掺杂区设置成包括N+型子悬浮掺杂区和N-型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区的结构，该最高点会被进一步提高，也就是说，N-型光电二极管掺杂区至悬浮掺杂区之间的势垒的最高点增大，这样进一步抑制了N-型光电二极管掺杂区至悬浮掺杂区的漏电。其次，即使在N-型光电二极管掺杂区中的电子越过N-型光电二极管掺杂区至悬浮掺杂区之间的势垒，由于悬浮掺杂区和N+型复位漏极区还存在势垒，因此那么这部分电子也不会直接流到N+型复位漏极区，而是会积累在悬浮掺杂区中，进一步，设置N+型子悬浮掺杂区和N-型子悬浮掺杂区，可积累的电子容量进一步增大，这样进一步抑制了N-型光电二极管掺杂区至N+型复位漏极区的漏电。
所述复位栅电极结构制作在所述P-型半导体衬底中，所述复位栅电极结构的深度大于所述N+型复位漏极区的深度，通过设置复位栅电极结构和N+型复位漏极区之间的深度关系，能够使N-型光电二极管掺杂区至N+型复位漏极区的沟道长度变长，这样有效抑制了N-型光电二极管掺杂区至N+型复位漏极区的漏电。
如图4所示，在所述P型电荷阻挡区16上方形成栅极绝缘层24，在所述栅极绝缘层上方形成传输栅电极21、倍增栅电极22、读取栅电极23。
相应的，本发明还提供一种采用上述方法形成的光电转换装置，请参考图4，包括：
P-型半导体衬底10；
N-型光电二极管掺杂区11，设置于所述P-型半导体衬底10中，P+型空穴累积区15设置在所述N-型光电二极管掺杂区11和所述P-型半导体衬底10的上表面之间；
N型电荷保持区12，设置于所述P-型半导体衬底10中，P型电荷阻挡区16设置在所述N型电荷保持区12和所述P-型半导体衬底10的上表面之间；
位于所述P型电荷阻挡区16上方的栅极绝缘层24，以及位于所述栅极绝缘层上方的传输栅电极21、倍增栅电极22、读取栅电极23；
复位栅电极结构，设置于所述P-型半导体衬底10中，包括复位栅电极25和复位栅电极绝缘层26；
悬浮掺杂区13，设置于所述P-型半导体衬底中，包括N+型子悬浮掺杂区131和N-型子悬浮掺杂区132，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区；
N+型复位漏极区14，设置于所述P-型半导体衬底10中；
所述N+型复位漏极区14和所述N型电荷保持区12分别位于所述复位栅电极结构的两侧，所述悬浮掺杂区13位于所述复位栅电极结构的下方，所述悬浮掺杂区13和所述N-型光电二极管掺杂区11分别位于所述N型电荷保持区12的两侧。
所述N+型子悬浮掺杂区131和所述N-型子悬浮掺杂区132为磷杂质掺杂，所述N+型子悬浮掺杂区131的杂质浓度为5.0×1017cm-3，所述N-型子悬浮掺杂区132的杂质浓度为5.0×1016cm-3。
所述N+型复位漏极区14电连接电源线。
所述N-型光电二极管掺杂区11、所述N型电荷保持区12、所述悬浮掺杂区13、所述N+型复位漏极区14彼此相互分立。
所述复位栅电极结构的深度大于所述N+型复位漏极区14的深度。
所述复位栅电极绝缘层包围所述复位栅电极的底部和侧壁。
本发明还提供一种固态成像装置，包括上述的光电转换装置。
尽管已经参考本公开的实施例描述了本公开，但要理解本公开不限于实施例和构造。本公开意在覆盖各种修改和等价布置。此外，除却所述的各种组合和配置之外，其它包括更多、更少的元件或者只包括单个元件的组合和配置也落在本公开的精神和范围内。

Claims (5)

1.一种光电转换装置的形成方法，其特征在于，包括：
提供P-型半导体衬底；
在所述P-型半导体衬底形成一沟槽，在所述沟槽底部的P-型半导体衬底进行N型掺杂，形成悬浮掺杂区，所述悬浮掺杂区包括N+型子悬浮掺杂区和N-型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区；
在所述沟槽的底部和侧面形成复位栅电极绝缘层，在所述复位栅电极绝缘层上形成复位栅电极，所述复位栅电极绝缘层与所述复位栅电极组成复位栅电极结构；
在所述复位栅电极结构两侧的P-型半导体衬底中分别进行N型掺杂，形成N型电荷保持区和N+型复位漏极区，在所述N型电荷保持区相对于所述复位栅电极结构的另一侧进行N型掺杂，形成N-型光电二极管掺杂区；
在所述N-型光电二极管掺杂区和所述P-型半导体衬底的上表面之间进行P型掺杂，形成P+型空穴累积区；
在所述N型电荷保持区和所述P-型半导体衬底的上表面之间进行P型掺杂，形成P型电荷阻挡区；
在所述P型电荷阻挡区上方形成栅极绝缘层，在所述栅极绝缘层上方形成传输栅电极、倍增栅电极、读取栅电极；
其中，所述复位栅电极结构的深度大于所述N+型复位漏极区的深度。
2.根据权利要求1所述的形成方法，其特征在于，所述N+型子悬浮掺杂区和所述N-型子悬浮掺杂区为磷杂质掺杂，所述N+型子悬浮掺杂区的杂质浓度为5.0×1017cm-3，所述N-型子悬浮掺杂区的杂质浓度为5.0×1016cm-3。
3.根据权利要求1所述的形成方法，其特征在于，所述N+型复位漏极区电连接电源线。
4.根据权利要求1所述的形成方法，其特征在于，所述N-型光电二极管掺杂区、所述N型电荷保持区、所述悬浮掺杂区、所述N+型复位漏极区彼此相互分立。
5.根据权利要求1-4任一项所述的形成方法，其特征在于，所述复位栅电极绝缘层包围所述复位栅电极的底部和侧壁。
CN202110022527.4A 2021-01-08 2021-01-08 一种光电转换装置的形成方法 Active CN112885931B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110022527.4A CN112885931B (zh) 2021-01-08 2021-01-08 一种光电转换装置的形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110022527.4A CN112885931B (zh) 2021-01-08 2021-01-08 一种光电转换装置的形成方法

Publications (2)

Publication Number Publication Date
CN112885931A CN112885931A (zh) 2021-06-01
CN112885931B true CN112885931B (zh) 2022-09-06

Family

ID=76047239

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110022527.4A Active CN112885931B (zh) 2021-01-08 2021-01-08 一种光电转换装置的形成方法

Country Status (1)

Country Link
CN (1) CN112885931B (zh)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020058919A (ko) * 2000-12-30 2002-07-12 박종섭 포토다이오드의 용량을 증가시키면서 전하운송을 향상시킬수 있는 이미지 센서 제조 방법
CN1707804A (zh) * 2004-06-04 2005-12-14 三星电子株式会社 用于减小暗电流的图像传感器及其制造方法
JP2007123680A (ja) * 2005-10-31 2007-05-17 Victor Co Of Japan Ltd 固体撮像装置
CN1979883A (zh) * 2005-12-05 2007-06-13 索尼株式会社 固态成像器件
CN101022118A (zh) * 2006-02-14 2007-08-22 国际商业机器公司 具有增强电容的cmos成像器光电二极管及其制造方法
CN104485358A (zh) * 2014-12-12 2015-04-01 西安邮电大学 一种基于陷阱产生机制的半导体器件其制造方法及应用
CN104681571A (zh) * 2013-10-31 2015-06-03 三星电子株式会社 图像传感器和图像传感器系统
CN106298777A (zh) * 2016-09-27 2017-01-04 上海华力微电子有限公司 一种用作esd保护的ggnmos器件及其制作方法
CN109904183A (zh) * 2019-02-25 2019-06-18 德淮半导体有限公司 图像传感器及其形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015228388A (ja) * 2012-09-25 2015-12-17 ソニー株式会社 固体撮像装置、電子機器

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020058919A (ko) * 2000-12-30 2002-07-12 박종섭 포토다이오드의 용량을 증가시키면서 전하운송을 향상시킬수 있는 이미지 센서 제조 방법
CN1707804A (zh) * 2004-06-04 2005-12-14 三星电子株式会社 用于减小暗电流的图像传感器及其制造方法
JP2007123680A (ja) * 2005-10-31 2007-05-17 Victor Co Of Japan Ltd 固体撮像装置
CN1979883A (zh) * 2005-12-05 2007-06-13 索尼株式会社 固态成像器件
CN101022118A (zh) * 2006-02-14 2007-08-22 国际商业机器公司 具有增强电容的cmos成像器光电二极管及其制造方法
CN104681571A (zh) * 2013-10-31 2015-06-03 三星电子株式会社 图像传感器和图像传感器系统
CN104485358A (zh) * 2014-12-12 2015-04-01 西安邮电大学 一种基于陷阱产生机制的半导体器件其制造方法及应用
CN106298777A (zh) * 2016-09-27 2017-01-04 上海华力微电子有限公司 一种用作esd保护的ggnmos器件及其制作方法
CN109904183A (zh) * 2019-02-25 2019-06-18 德淮半导体有限公司 图像传感器及其形成方法

Also Published As

Publication number Publication date
CN112885931A (zh) 2021-06-01

Similar Documents

Publication Publication Date Title
CN108336101B (zh) 飞行时间探测像素
JP4832541B2 (ja) 固体撮像素子および電子情報機器
KR970007711B1 (ko) 오버-플로우 드레인(ofd)구조를 가지는 전하결합소자형 고체촬상장치
KR20080050448A (ko) 이미지 센서 및 이를 포함하는 디지털 카메라
TWI690073B (zh) 具有低漏電流之影像感測器之浮動擴散
US11695029B2 (en) Pixel formation method
JP2013042178A (ja) イメージセンサ及びその製造方法
CN109904183B (zh) 图像传感器及其形成方法
TW439284B (en) Solid state image sensing device
CN112885931B (zh) 一种光电转换装置的形成方法
JP3695748B2 (ja) 固体撮像装置並びにその製造方法および駆動方法
CN112885912B (zh) 一种光电转换装置
KR100660345B1 (ko) 씨모스 이미지 센서 및 그의 제조방법
KR20070064857A (ko) 이미지 센서 및 그 제조방법
US11557626B2 (en) Complementary metal-oxide-semiconductor image sensor and method of making
CN112635506A (zh) 一种图像传感器的形成方法
CN114078889A (zh) 全局快门cmos图像传感器及其制造方法
KR100819743B1 (ko) 3차원 구조의 다결정 화합물 반도체 이미지센서용 포토다이오드 및 그 제조 방법
KR950002194B1 (ko) 프레임 트랜스퍼방식의 ccd 영상센서
JP2005026717A (ja) 固体撮像素子
KR0155783B1 (ko) 전하결합소자형 고체촬상장치 및 그 제조방법
KR0147603B1 (ko) 고체촬상소자 및 그 제조방법
KR20100080149A (ko) 이미지센서 및 그 제조방법
JP4474829B2 (ja) 固体撮像素子
JP4247205B2 (ja) 固体撮像装置の駆動方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20220804

Address after: Unit 602, Building 10, Tianfulai International Industrial City, No. 3, Changfu West Road, Rongli Neighborhood Committee, Ronggui, Shunde District, Foshan City, Guangdong Province, 528000

Applicant after: Guangdong Shunde Qiao'an Electronics Co., Ltd.

Address before: 215000 No.57 gejiabang, Lingfeng Village (17), Beiqiao Town, Xiangcheng District, Suzhou City, Jiangsu Province

Applicant before: You Xiaoyue

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant