TWI338728B - - Google Patents
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- Publication number
- TWI338728B TWI338728B TW093124770A TW93124770A TWI338728B TW I338728 B TWI338728 B TW I338728B TW 093124770 A TW093124770 A TW 093124770A TW 93124770 A TW93124770 A TW 93124770A TW I338728 B TWI338728 B TW I338728B
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- crystal
- region
- concentration
- manufacturing
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims description 182
- 238000000034 method Methods 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 239000002994 raw material Substances 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 66
- 235000012431 wafers Nutrition 0.000 description 29
- 230000007547 defect Effects 0.000 description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 239000007789 gas Substances 0.000 description 19
- 238000011109 contamination Methods 0.000 description 13
- 238000002425 crystallisation Methods 0.000 description 12
- 230000008025 crystallization Effects 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 229910001385 heavy metal Inorganic materials 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000155 melt Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 208000027697 autoimmune lymphoproliferative syndrome due to CTLA4 haploinsuffiency Diseases 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000009643 growth defect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002296 pyrolytic carbon Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000002485 urinary effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003296837 | 2003-08-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200508429A TW200508429A (en) | 2005-03-01 |
| TWI338728B true TWI338728B (enExample) | 2011-03-11 |
Family
ID=34213598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093124770A TW200508429A (en) | 2003-08-20 | 2004-08-18 | Process for producing single crystal and silicon single crystal wafer |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7326395B2 (enExample) |
| EP (1) | EP1662024B1 (enExample) |
| JP (1) | JP4293188B2 (enExample) |
| KR (1) | KR101120615B1 (enExample) |
| TW (1) | TW200508429A (enExample) |
| WO (1) | WO2005019506A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101229067B1 (ko) * | 2004-02-02 | 2013-02-04 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 단결정, 실리콘 웨이퍼, 그 제조장치 및 제조방법 |
| US7387680B2 (en) * | 2005-05-13 | 2008-06-17 | Cree, Inc. | Method and apparatus for the production of silicon carbide crystals |
| DE102006002682A1 (de) | 2006-01-19 | 2007-08-02 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe |
| KR101384060B1 (ko) * | 2012-08-03 | 2014-04-09 | 주식회사 엘지실트론 | 실리콘 단결정 잉곳 성장 방법 |
| CN103911654B (zh) * | 2014-04-15 | 2016-08-17 | 宁夏大学 | 制备直径为400mm以上的单晶硅的方法 |
| CN111962140A (zh) * | 2020-08-28 | 2020-11-20 | 晶科绿能(上海)管理有限公司 | 连续拉晶装置和连续拉制晶棒的方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0741383A (ja) | 1993-07-29 | 1995-02-10 | Nippon Steel Corp | 半導体単結晶およびその製造方法 |
| JP3085146B2 (ja) | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
| JPH09202684A (ja) | 1996-01-19 | 1997-08-05 | Shin Etsu Handotai Co Ltd | 結晶欠陥が少ないシリコン単結晶の製造方法およびこの方法で製造されたシリコン単結晶 |
| JP3460551B2 (ja) | 1997-11-11 | 2003-10-27 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法 |
| JP3601324B2 (ja) * | 1998-11-19 | 2004-12-15 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法 |
| JP3752890B2 (ja) | 1999-05-26 | 2006-03-08 | 株式会社Ｓｕｍｃｏ | シリコン単結晶インゴットの製造方法 |
| US6592662B2 (en) | 2000-02-28 | 2003-07-15 | Shin-Etsu Handotai Co., Ltd. | Method for preparing silicon single crystal and silicon single crystal |
| JP4096557B2 (ja) | 2000-04-25 | 2008-06-04 | 信越半導体株式会社 | シリコン単結晶ウエーハ及びシリコン単結晶の製造方法並びにシリコン単結晶ウエーハの製造方法 |
| JP3994665B2 (ja) * | 2000-12-28 | 2007-10-24 | 信越半導体株式会社 | シリコン単結晶ウエーハおよびシリコン単結晶の製造方法 |
| US7129123B2 (en) * | 2002-08-27 | 2006-10-31 | Shin-Etsu Handotai Co., Ltd. | SOI wafer and a method for producing an SOI wafer |
| JP4193610B2 (ja) * | 2003-06-27 | 2008-12-10 | 信越半導体株式会社 | 単結晶の製造方法 |
-
2004
- 2004-08-13 WO PCT/JP2004/011685 patent/WO2005019506A1/ja not_active Ceased
- 2004-08-13 KR KR1020067003089A patent/KR101120615B1/ko not_active Expired - Fee Related
- 2004-08-13 EP EP04771652.7A patent/EP1662024B1/en not_active Expired - Lifetime
- 2004-08-13 US US10/568,186 patent/US7326395B2/en not_active Expired - Lifetime
- 2004-08-13 JP JP2005513273A patent/JP4293188B2/ja not_active Expired - Fee Related
- 2004-08-18 TW TW093124770A patent/TW200508429A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200508429A (en) | 2005-03-01 |
| US20060236919A1 (en) | 2006-10-26 |
| EP1662024A1 (en) | 2006-05-31 |
| JP4293188B2 (ja) | 2009-07-08 |
| EP1662024B1 (en) | 2016-01-13 |
| WO2005019506A1 (ja) | 2005-03-03 |
| US7326395B2 (en) | 2008-02-05 |
| JPWO2005019506A1 (ja) | 2007-11-01 |
| KR20060037445A (ko) | 2006-05-03 |
| KR101120615B1 (ko) | 2012-03-16 |
| EP1662024A4 (en) | 2008-10-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |