JP4293188B2 - 単結晶の製造方法及びシリコン単結晶ウエーハ - Google Patents

単結晶の製造方法及びシリコン単結晶ウエーハ Download PDF

Info

Publication number
JP4293188B2
JP4293188B2 JP2005513273A JP2005513273A JP4293188B2 JP 4293188 B2 JP4293188 B2 JP 4293188B2 JP 2005513273 A JP2005513273 A JP 2005513273A JP 2005513273 A JP2005513273 A JP 2005513273A JP 4293188 B2 JP4293188 B2 JP 4293188B2
Authority
JP
Japan
Prior art keywords
single crystal
crystal
region
silicon
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005513273A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2005019506A1 (ja
Inventor
泉 布施川
伸晃 三田村
隆弘 柳町
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of JPWO2005019506A1 publication Critical patent/JPWO2005019506A1/ja
Application granted granted Critical
Publication of JP4293188B2 publication Critical patent/JP4293188B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2005513273A 2003-08-20 2004-08-13 単結晶の製造方法及びシリコン単結晶ウエーハ Expired - Fee Related JP4293188B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003296837 2003-08-20
JP2003296837 2003-08-20
PCT/JP2004/011685 WO2005019506A1 (ja) 2003-08-20 2004-08-13 単結晶の製造方法及びシリコン単結晶ウエーハ

Publications (2)

Publication Number Publication Date
JPWO2005019506A1 JPWO2005019506A1 (ja) 2007-11-01
JP4293188B2 true JP4293188B2 (ja) 2009-07-08

Family

ID=34213598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005513273A Expired - Fee Related JP4293188B2 (ja) 2003-08-20 2004-08-13 単結晶の製造方法及びシリコン単結晶ウエーハ

Country Status (6)

Country Link
US (1) US7326395B2 (enExample)
EP (1) EP1662024B1 (enExample)
JP (1) JP4293188B2 (enExample)
KR (1) KR101120615B1 (enExample)
TW (1) TW200508429A (enExample)
WO (1) WO2005019506A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070158653A1 (en) * 2004-02-02 2007-07-12 Shin-Etsu Handotai Co., Ltd. Silicon single crystal, a silicon wafer, an apparatus for producing the same, and a method for producing the same
US7387680B2 (en) * 2005-05-13 2008-06-17 Cree, Inc. Method and apparatus for the production of silicon carbide crystals
DE102006002682A1 (de) 2006-01-19 2007-08-02 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe
KR101384060B1 (ko) * 2012-08-03 2014-04-09 주식회사 엘지실트론 실리콘 단결정 잉곳 성장 방법
CN103911654B (zh) * 2014-04-15 2016-08-17 宁夏大学 制备直径为400mm以上的单晶硅的方法
CN111962140A (zh) * 2020-08-28 2020-11-20 晶科绿能(上海)管理有限公司 连续拉晶装置和连续拉制晶棒的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0741383A (ja) 1993-07-29 1995-02-10 Nippon Steel Corp 半導体単結晶およびその製造方法
JP3085146B2 (ja) 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JPH09202684A (ja) 1996-01-19 1997-08-05 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法およびこの方法で製造されたシリコン単結晶
JP3460551B2 (ja) 1997-11-11 2003-10-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
JP3601324B2 (ja) * 1998-11-19 2004-12-15 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
JP3752890B2 (ja) 1999-05-26 2006-03-08 株式会社Ｓｕｍｃｏ シリコン単結晶インゴットの製造方法
WO2001063027A1 (en) * 2000-02-28 2001-08-30 Shin-Etsu Handotai Co., Ltd Method for preparing silicon single crystal and silicon single crystal
WO2001081661A1 (fr) * 2000-04-25 2001-11-01 Shin-Etsu Handotai Co.,Ltd. Tranche de silicium monocristallin, son procede d'elaboration et procede d'obtention d'une tranche de silicium monocristallin
JP3994665B2 (ja) 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
US7129123B2 (en) * 2002-08-27 2006-10-31 Shin-Etsu Handotai Co., Ltd. SOI wafer and a method for producing an SOI wafer
JP4193610B2 (ja) * 2003-06-27 2008-12-10 信越半導体株式会社 単結晶の製造方法

Also Published As

Publication number Publication date
JPWO2005019506A1 (ja) 2007-11-01
EP1662024A1 (en) 2006-05-31
EP1662024A4 (en) 2008-10-15
US7326395B2 (en) 2008-02-05
KR20060037445A (ko) 2006-05-03
WO2005019506A1 (ja) 2005-03-03
EP1662024B1 (en) 2016-01-13
TW200508429A (en) 2005-03-01
US20060236919A1 (en) 2006-10-26
KR101120615B1 (ko) 2012-03-16
TWI338728B (enExample) 2011-03-11

Similar Documents

Publication Publication Date Title
US6517632B2 (en) Method of fabricating a single crystal ingot and method of fabricating a silicon wafer
TWI471940B (zh) Silicon substrate manufacturing method and silicon substrate
JP6927150B2 (ja) シリコン単結晶の製造方法
JP2009114054A (ja) 酸素濃度特性が改善した半導体単結晶の製造方法
US6632411B2 (en) Silicon wafer and method for producing silicon single crystal
JP3909675B2 (ja) シリコン単結晶の製造装置及びそれを用いたシリコン単結晶の製造方法
JP3601328B2 (ja) シリコン単結晶の製造方法およびこの方法で製造されたシリコン単結晶とシリコンウエーハ
JP4192530B2 (ja) パーティクルモニター用シリコン単結晶ウェーハの製造方法
EP1536044B1 (en) Method of manufacturing an epitaxial silicon wafer
JP4293188B2 (ja) 単結晶の製造方法及びシリコン単結晶ウエーハ
JP4457584B2 (ja) 単結晶の製造方法及び単結晶
JP2009274888A (ja) シリコン単結晶製造方法及びシリコン単結晶ウェーハ
JP2008247737A (ja) シリコン単結晶の製造装置及び製造方法並びにシリコンウェーハ
JPWO1999037833A1 (ja) 単結晶引き上げ装置
JP4080657B2 (ja) シリコン単結晶インゴットの製造方法
JP4151148B2 (ja) シリコン単結晶の製造方法
JP4273793B2 (ja) 単結晶の製造方法
KR20020082132A (ko) 실리콘 단결정의 제조장치 및 그것을 사용한 실리콘단결정의 제조방법
JP3900816B2 (ja) シリコンウェーハの製造方法
JP2006027928A (ja) 単結晶製造装置及び単結晶製造方法、並びにシリコン単結晶及びシリコン単結晶ウエーハ
JPWO2001088230A1 (ja) シリコン単結晶ウエーハの製造方法およびシリコン単結晶ウエーハならびにエピタキシャルウエーハ
JP4501507B2 (ja) シリコン単結晶育成方法
WO2007007479A1 (ja) 単結晶の製造方法
JP2006001767A (ja) シリコン単結晶の製造方法、およびこれに用いる覗き窓ガラス、結晶観察用窓ガラス、シリコン単結晶製造装置
JP2007210820A (ja) シリコン単結晶の製造方法

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090113

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090217

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090317

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090330

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120417

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4293188

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120417

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130417

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130417

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140417

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees