TW200508429A - Process for producing single crystal and silicon single crystal wafer - Google Patents
Process for producing single crystal and silicon single crystal waferInfo
- Publication number
- TW200508429A TW200508429A TW093124770A TW93124770A TW200508429A TW 200508429 A TW200508429 A TW 200508429A TW 093124770 A TW093124770 A TW 093124770A TW 93124770 A TW93124770 A TW 93124770A TW 200508429 A TW200508429 A TW 200508429A
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- pulled
- producing
- straightening pipe
- region
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003296837 | 2003-08-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200508429A true TW200508429A (en) | 2005-03-01 |
TWI338728B TWI338728B (zh) | 2011-03-11 |
Family
ID=34213598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093124770A TW200508429A (en) | 2003-08-20 | 2004-08-18 | Process for producing single crystal and silicon single crystal wafer |
Country Status (6)
Country | Link |
---|---|
US (1) | US7326395B2 (zh) |
EP (1) | EP1662024B1 (zh) |
JP (1) | JP4293188B2 (zh) |
KR (1) | KR101120615B1 (zh) |
TW (1) | TW200508429A (zh) |
WO (1) | WO2005019506A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070158653A1 (en) * | 2004-02-02 | 2007-07-12 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal, a silicon wafer, an apparatus for producing the same, and a method for producing the same |
US7387680B2 (en) * | 2005-05-13 | 2008-06-17 | Cree, Inc. | Method and apparatus for the production of silicon carbide crystals |
DE102006002682A1 (de) | 2006-01-19 | 2007-08-02 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe |
KR101384060B1 (ko) * | 2012-08-03 | 2014-04-09 | 주식회사 엘지실트론 | 실리콘 단결정 잉곳 성장 방법 |
CN103911654B (zh) * | 2014-04-15 | 2016-08-17 | 宁夏大学 | 制备直径为400mm以上的单晶硅的方法 |
CN111962140A (zh) * | 2020-08-28 | 2020-11-20 | 晶科绿能(上海)管理有限公司 | 连续拉晶装置和连续拉制晶棒的方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0741383A (ja) | 1993-07-29 | 1995-02-10 | Nippon Steel Corp | 半導体単結晶およびその製造方法 |
JP3085146B2 (ja) | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
JPH09202684A (ja) | 1996-01-19 | 1997-08-05 | Shin Etsu Handotai Co Ltd | 結晶欠陥が少ないシリコン単結晶の製造方法およびこの方法で製造されたシリコン単結晶 |
JP3460551B2 (ja) | 1997-11-11 | 2003-10-27 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法 |
JP3601324B2 (ja) * | 1998-11-19 | 2004-12-15 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法 |
JP3752890B2 (ja) | 1999-05-26 | 2006-03-08 | 株式会社Sumco | シリコン単結晶インゴットの製造方法 |
US6592662B2 (en) * | 2000-02-28 | 2003-07-15 | Shin-Etsu Handotai Co., Ltd. | Method for preparing silicon single crystal and silicon single crystal |
JP4096557B2 (ja) * | 2000-04-25 | 2008-06-04 | 信越半導体株式会社 | シリコン単結晶ウエーハ及びシリコン単結晶の製造方法並びにシリコン単結晶ウエーハの製造方法 |
JP3994665B2 (ja) * | 2000-12-28 | 2007-10-24 | 信越半導体株式会社 | シリコン単結晶ウエーハおよびシリコン単結晶の製造方法 |
US7129123B2 (en) * | 2002-08-27 | 2006-10-31 | Shin-Etsu Handotai Co., Ltd. | SOI wafer and a method for producing an SOI wafer |
JP4193610B2 (ja) * | 2003-06-27 | 2008-12-10 | 信越半導体株式会社 | 単結晶の製造方法 |
-
2004
- 2004-08-13 EP EP04771652.7A patent/EP1662024B1/en not_active Expired - Lifetime
- 2004-08-13 US US10/568,186 patent/US7326395B2/en active Active
- 2004-08-13 JP JP2005513273A patent/JP4293188B2/ja not_active Expired - Lifetime
- 2004-08-13 WO PCT/JP2004/011685 patent/WO2005019506A1/ja active Application Filing
- 2004-08-13 KR KR1020067003089A patent/KR101120615B1/ko active IP Right Grant
- 2004-08-18 TW TW093124770A patent/TW200508429A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2005019506A1 (ja) | 2005-03-03 |
US20060236919A1 (en) | 2006-10-26 |
EP1662024B1 (en) | 2016-01-13 |
KR20060037445A (ko) | 2006-05-03 |
US7326395B2 (en) | 2008-02-05 |
JP4293188B2 (ja) | 2009-07-08 |
JPWO2005019506A1 (ja) | 2007-11-01 |
KR101120615B1 (ko) | 2012-03-16 |
TWI338728B (zh) | 2011-03-11 |
EP1662024A4 (en) | 2008-10-15 |
EP1662024A1 (en) | 2006-05-31 |
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