TWI337560B - Laser processing method - Google Patents

Laser processing method Download PDF

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Publication number
TWI337560B
TWI337560B TW097143686A TW97143686A TWI337560B TW I337560 B TWI337560 B TW I337560B TW 097143686 A TW097143686 A TW 097143686A TW 97143686 A TW97143686 A TW 97143686A TW I337560 B TWI337560 B TW I337560B
Authority
TW
Taiwan
Prior art keywords
substrate
region
wafer
processed
cut
Prior art date
Application number
TW097143686A
Other languages
English (en)
Chinese (zh)
Other versions
TW200914185A (en
Inventor
Kenshi Fukumitsu
Fumitsugu Fukuyo
Naoki Uchiyama
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of TW200914185A publication Critical patent/TW200914185A/zh
Application granted granted Critical
Publication of TWI337560B publication Critical patent/TWI337560B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW097143686A 2002-03-12 2003-09-10 Laser processing method TWI337560B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002067372 2002-03-12
JP2002067348 2002-03-12
JP2003067276A JP3624909B2 (ja) 2002-03-12 2003-03-12 レーザ加工方法

Publications (2)

Publication Number Publication Date
TW200914185A TW200914185A (en) 2009-04-01
TWI337560B true TWI337560B (en) 2011-02-21

Family

ID=30449126

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097143686A TWI337560B (en) 2002-03-12 2003-09-10 Laser processing method

Country Status (2)

Country Link
JP (1) JP3624909B2 (enExample)
TW (1) TWI337560B (enExample)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005032903A (ja) 2003-07-10 2005-02-03 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP4563097B2 (ja) * 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP4505789B2 (ja) * 2004-02-10 2010-07-21 株式会社東京精密 チップ製造方法
JP4768963B2 (ja) * 2004-03-01 2011-09-07 リンテック株式会社 ウェハの転写方法
JP2005252126A (ja) * 2004-03-08 2005-09-15 Disco Abrasive Syst Ltd ウエーハの加工方法
JP4584607B2 (ja) * 2004-03-16 2010-11-24 浜松ホトニクス株式会社 加工対象物切断方法
JP2005276987A (ja) * 2004-03-24 2005-10-06 Lintec Corp 極薄チップの製造プロセス及び製造装置
WO2005098915A1 (ja) * 2004-03-30 2005-10-20 Hamamatsu Photonics K.K. レーザ加工方法及び半導体チップ
CN100527360C (zh) * 2004-03-30 2009-08-12 浜松光子学株式会社 激光加工方法及半导体芯片
JP4536407B2 (ja) 2004-03-30 2010-09-01 浜松ホトニクス株式会社 レーザ加工方法及び加工対象物
JP4694795B2 (ja) * 2004-05-18 2011-06-08 株式会社ディスコ ウエーハの分割方法
JP4769429B2 (ja) * 2004-05-26 2011-09-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4733934B2 (ja) 2004-06-22 2011-07-27 株式会社ディスコ ウエーハの加工方法
JP4634089B2 (ja) * 2004-07-30 2011-02-16 浜松ホトニクス株式会社 レーザ加工方法
KR101190454B1 (ko) * 2004-08-06 2012-10-11 하마마츠 포토닉스 가부시키가이샤 레이저 가공 장치
JP2006059941A (ja) * 2004-08-19 2006-03-02 Disco Abrasive Syst Ltd 半導体チップの製造方法
JP4917257B2 (ja) 2004-11-12 2012-04-18 浜松ホトニクス株式会社 レーザ加工方法
JP4781661B2 (ja) * 2004-11-12 2011-09-28 浜松ホトニクス株式会社 レーザ加工方法
JP4198123B2 (ja) * 2005-03-22 2008-12-17 浜松ホトニクス株式会社 レーザ加工方法
JP4809632B2 (ja) 2005-06-01 2011-11-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4705418B2 (ja) * 2005-06-29 2011-06-22 株式会社ディスコ ウェーハの加工方法
JP2007118207A (ja) * 2005-10-25 2007-05-17 Seiko Epson Corp 積層体の加工方法
JP2007165835A (ja) * 2005-11-16 2007-06-28 Denso Corp レーザダイシング方法および半導体ウェハ
JP4909657B2 (ja) * 2006-06-30 2012-04-04 株式会社ディスコ サファイア基板の加工方法
JP4951551B2 (ja) * 2008-02-26 2012-06-13 浜松ホトニクス株式会社 半導体光検出装置
JP5107092B2 (ja) * 2008-02-26 2012-12-26 浜松ホトニクス株式会社 半導体受光素子の製造方法
JP4951552B2 (ja) * 2008-02-26 2012-06-13 浜松ホトニクス株式会社 半導体光検出装置
JP5087426B2 (ja) * 2008-02-26 2012-12-05 浜松ホトニクス株式会社 フォトダイオードアレイ
JP4951553B2 (ja) * 2008-02-26 2012-06-13 浜松ホトニクス株式会社 半導体受光素子
DE102008021355B4 (de) * 2008-03-14 2020-08-20 Solarworld Industries Gmbh Verfahren zur Herstellung monokristalliner Solarzellen mit rückseitiger Kontaktstruktur
JP5155030B2 (ja) * 2008-06-13 2013-02-27 株式会社ディスコ 光デバイスウエーハの分割方法
JP5231136B2 (ja) * 2008-08-22 2013-07-10 株式会社ディスコ 光デバイスウエーハの加工方法
JP5537081B2 (ja) 2009-07-28 2014-07-02 浜松ホトニクス株式会社 加工対象物切断方法
JP5559623B2 (ja) * 2010-07-15 2014-07-23 株式会社ディスコ 分割方法
JP5416081B2 (ja) * 2010-12-27 2014-02-12 古河電気工業株式会社 ウエハ貼着用粘着シート、ウエハの個片化方法、およびチップの製造方法
KR101299236B1 (ko) 2011-12-28 2013-08-22 주식회사 이오테크닉스 레이저를 이용한 웨이퍼 지지용 지지 테이프 절단 장치 및 방법
JP5770677B2 (ja) * 2012-05-08 2015-08-26 株式会社ディスコ ウェーハの加工方法
JP6180742B2 (ja) * 2013-01-17 2017-08-16 株式会社ディスコ テープ貼着方法及びテープ貼着装置
JP2015119076A (ja) * 2013-12-19 2015-06-25 信越ポリマー株式会社 内部加工層形成単結晶部材およびその製造方法
DE102014213775B4 (de) * 2014-07-15 2018-02-15 Innolas Solutions Gmbh Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen, kristallinen Substraten, insbesondere von Halbleitersubstraten
JP7157301B2 (ja) 2017-11-06 2022-10-20 株式会社東京精密 ウェーハの加工方法
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7334065B2 (ja) * 2019-05-28 2023-08-28 株式会社ディスコ チップの製造方法
JP6653943B1 (ja) * 2019-12-25 2020-02-26 株式会社東京精密 抗折強度の高いチップを得る半導体ウェーハのレーザ加工装置
JP7486327B2 (ja) * 2020-03-05 2024-05-17 株式会社ディスコ チップの製造方法
KR102688331B1 (ko) * 2021-09-30 2024-07-25 주식회사 에스에프에이반도체 Cis 웨이퍼 다이싱 방법

Also Published As

Publication number Publication date
TW200914185A (en) 2009-04-01
JP2004001076A (ja) 2004-01-08
JP3624909B2 (ja) 2005-03-02

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