TWI333674B - - Google Patents

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Publication number
TWI333674B
TWI333674B TW095149517A TW95149517A TWI333674B TW I333674 B TWI333674 B TW I333674B TW 095149517 A TW095149517 A TW 095149517A TW 95149517 A TW95149517 A TW 95149517A TW I333674 B TWI333674 B TW I333674B
Authority
TW
Taiwan
Prior art keywords
oxide film
gas
wafer
film
partial pressure
Prior art date
Application number
TW095149517A
Other languages
English (en)
Chinese (zh)
Other versions
TW200739711A (en
Inventor
Shigeki Tozawa
Yusuke Muraki
Tadashi Iino
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200739711A publication Critical patent/TW200739711A/zh
Application granted granted Critical
Publication of TWI333674B publication Critical patent/TWI333674B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095149517A 2005-12-28 2006-12-28 Etching method and recording medium TW200739711A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005379494A JP4890025B2 (ja) 2005-12-28 2005-12-28 エッチング方法及び記録媒体

Publications (2)

Publication Number Publication Date
TW200739711A TW200739711A (en) 2007-10-16
TWI333674B true TWI333674B (enExample) 2010-11-21

Family

ID=38217915

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095149517A TW200739711A (en) 2005-12-28 2006-12-28 Etching method and recording medium

Country Status (3)

Country Link
JP (1) JP4890025B2 (enExample)
TW (1) TW200739711A (enExample)
WO (1) WO2007074695A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11762293B2 (en) 2021-05-11 2023-09-19 United Microelectronics Corp. Fabricating method of reducing photoresist footing

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094307A (ja) * 2007-10-10 2009-04-30 Tokyo Electron Ltd エッチング方法及び記録媒体
JP5374039B2 (ja) * 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
JP5344824B2 (ja) * 2008-01-31 2013-11-20 東京エレクトロン株式会社 レジストパターンの形成方法および記録媒体
JP4553049B2 (ja) * 2008-02-29 2010-09-29 エルピーダメモリ株式会社 半導体装置の製造方法
KR100870914B1 (ko) 2008-06-03 2008-11-28 주식회사 테스 실리콘 산화막의 건식 식각 방법
KR101146118B1 (ko) * 2008-12-09 2012-05-16 주식회사 테스 실리콘 산화막의 건식 식각 방법
JP4968861B2 (ja) 2009-03-19 2012-07-04 東京エレクトロン株式会社 基板のエッチング方法及びシステム
JP6161972B2 (ja) 2013-06-25 2017-07-12 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP2015056519A (ja) 2013-09-12 2015-03-23 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
JP6405958B2 (ja) * 2013-12-26 2018-10-17 東京エレクトロン株式会社 エッチング方法、記憶媒体及びエッチング装置
KR101874822B1 (ko) * 2016-04-01 2018-07-06 주식회사 테스 실리콘산화막의 선택적 식각 방법
JP6692202B2 (ja) * 2016-04-08 2020-05-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6812284B2 (ja) * 2017-03-28 2021-01-13 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP2020043180A (ja) 2018-09-07 2020-03-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法
TW202533319A (zh) 2018-09-13 2025-08-16 日商中央硝子股份有限公司 矽氮化物之蝕刻方法及蝕刻裝置
JP7606109B2 (ja) 2020-03-13 2024-12-25 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びドライエッチングガス組成物
KR102837958B1 (ko) 2021-10-27 2025-07-25 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 시스템
JP2023065305A (ja) * 2021-10-27 2023-05-12 東京エレクトロン株式会社 成膜方法及び成膜システム
JP7822166B2 (ja) 2021-12-13 2026-03-02 東京エレクトロン株式会社 ガス処理方法およびガス処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
US6858532B2 (en) * 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
TWI305872B (en) * 2003-03-17 2009-02-01 Nikon Corp Optical projection system, light-exposure apparatus and light-exposure method
JP4039385B2 (ja) * 2003-04-22 2008-01-30 東京エレクトロン株式会社 ケミカル酸化膜の除去方法
JP4833512B2 (ja) * 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
JP4495470B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11762293B2 (en) 2021-05-11 2023-09-19 United Microelectronics Corp. Fabricating method of reducing photoresist footing

Also Published As

Publication number Publication date
JP2007180418A (ja) 2007-07-12
JP4890025B2 (ja) 2012-03-07
WO2007074695A1 (ja) 2007-07-05
TW200739711A (en) 2007-10-16

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