TWI328979B - Plasma implantation system and method with target movement - Google Patents
Plasma implantation system and method with target movement Download PDFInfo
- Publication number
- TWI328979B TWI328979B TW092119374A TW92119374A TWI328979B TW I328979 B TWI328979 B TW I328979B TW 092119374 A TW092119374 A TW 092119374A TW 92119374 A TW92119374 A TW 92119374A TW I328979 B TWI328979 B TW I328979B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- workpiece
- workpieces
- wafer
- implantation
- Prior art date
Links
- 238000002513 implantation Methods 0.000 title claims description 61
- 238000000034 method Methods 0.000 title claims description 24
- 239000007943 implant Substances 0.000 claims description 73
- 150000002500 ions Chemical class 0.000 claims description 66
- 230000008569 process Effects 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 4
- 230000003116 impacting effect Effects 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 155
- 239000004065 semiconductor Substances 0.000 description 69
- 239000000758 substrate Substances 0.000 description 18
- 238000012545 processing Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 230000006378 damage Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 240000005373 Panax quinquefolius Species 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010616 electrical installation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 235000011389 fruit/vegetable juice Nutrition 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/198,370 US20030116089A1 (en) | 2001-12-04 | 2002-07-18 | Plasma implantation system and method with target movement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200405767A TW200405767A (en) | 2004-04-01 |
| TWI328979B true TWI328979B (en) | 2010-08-11 |
Family
ID=30769481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092119374A TWI328979B (en) | 2002-07-18 | 2003-07-16 | Plasma implantation system and method with target movement |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20030116089A1 (enExample) |
| EP (1) | EP1523756A2 (enExample) |
| JP (1) | JP4911898B2 (enExample) |
| KR (1) | KR100992710B1 (enExample) |
| CN (1) | CN100431087C (enExample) |
| TW (1) | TWI328979B (enExample) |
| WO (1) | WO2004010458A2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7001856B2 (en) * | 2003-10-31 | 2006-02-21 | Infineon Technologies Richmond, Lp | Method of calculating a pressure compensation recipe for a semiconductor wafer implanter |
| FR2871812B1 (fr) * | 2004-06-16 | 2008-09-05 | Ion Beam Services Sa | Implanteur ionique fonctionnant en mode plasma pulse |
| US7687787B2 (en) * | 2005-03-15 | 2010-03-30 | Varian Semiconductor Equipment Associates, Inc. | Profile adjustment in plasma ion implanter |
| TWI404110B (zh) * | 2005-03-15 | 2013-08-01 | Varian Semiconductor Equipment | 用於工件之電漿植入之方法與電漿摻雜裝置 |
| US20060240651A1 (en) * | 2005-04-26 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for adjusting ion implant parameters for improved process control |
| US7820533B2 (en) * | 2007-02-16 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Multi-step plasma doping with improved dose control |
| WO2011155199A1 (ja) * | 2010-06-10 | 2011-12-15 | 株式会社アルバック | 太陽電池製造装置及び太陽電池製造方法 |
| JP5510437B2 (ja) | 2011-12-07 | 2014-06-04 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| KR102312821B1 (ko) * | 2016-11-15 | 2021-10-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 이동하는 기판의 완전한 플라즈마 커버리지를 위한 동적 단계적 어레이 플라즈마 소스 |
| KR102861934B1 (ko) | 2017-09-26 | 2025-09-18 | 램 리써치 코포레이션 | 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들 |
| US11313039B2 (en) * | 2018-05-04 | 2022-04-26 | Jiangsu Favored Nanotechnology Co., LTD | Nano-coating protection method for electrical devices |
| CN109920713B (zh) * | 2019-03-08 | 2020-08-25 | 中国科学院半导体研究所 | 无掩膜按需掺杂的离子注入设备及方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4853514A (en) * | 1957-06-27 | 1989-08-01 | Lemelson Jerome H | Beam apparatus and method |
| JPS5732378A (en) * | 1980-08-05 | 1982-02-22 | Mitsubishi Electric Corp | Plasma etching apparatus |
| JPH0727767B2 (ja) * | 1985-07-12 | 1995-03-29 | 日新電機株式会社 | イオン処理装置 |
| US4899059A (en) * | 1988-05-18 | 1990-02-06 | Varian Associates, Inc. | Disk scanning apparatus for batch ion implanters |
| US5225366A (en) * | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
| US5212425A (en) * | 1990-10-10 | 1993-05-18 | Hughes Aircraft Company | Ion implantation and surface processing method and apparatus |
| JPH04336421A (ja) * | 1991-05-14 | 1992-11-24 | Mitsubishi Electric Corp | イオン注入装置用帯電中和装置 |
| JPH05135731A (ja) * | 1991-07-08 | 1993-06-01 | Sony Corp | イオン注入装置 |
| JP3173671B2 (ja) * | 1992-07-17 | 2001-06-04 | 東京エレクトロン株式会社 | イオン注入装置 |
| JP3289987B2 (ja) * | 1993-04-06 | 2002-06-10 | 松下電器産業株式会社 | 不純物のドーピング方法及びそれに使用する装置 |
| US5354381A (en) * | 1993-05-07 | 1994-10-11 | Varian Associates, Inc. | Plasma immersion ion implantation (PI3) apparatus |
| JP3003088B2 (ja) * | 1994-06-10 | 2000-01-24 | 住友イートンノバ株式会社 | イオン注入装置 |
| JPH0974068A (ja) * | 1995-09-07 | 1997-03-18 | Hitachi Ltd | 薄膜半導体素子の製造方法 |
| JPH09153465A (ja) * | 1995-11-30 | 1997-06-10 | Nissin Electric Co Ltd | 回転ドラム型イオン注入装置 |
| JP3631850B2 (ja) * | 1996-07-02 | 2005-03-23 | 矢崎総業株式会社 | 相対回転部材間継電装置 |
| US5911832A (en) * | 1996-10-10 | 1999-06-15 | Eaton Corporation | Plasma immersion implantation with pulsed anode |
| JPH10223553A (ja) * | 1997-02-05 | 1998-08-21 | Nissin Electric Co Ltd | イオン注入装置 |
| JP2000243721A (ja) * | 1999-02-19 | 2000-09-08 | Toshiba Corp | 半導体装置の製造装置 |
| GB2382716B (en) * | 1998-07-21 | 2003-09-03 | Applied Materials Inc | Ion Implantation Beam Monitor |
| US6020592A (en) * | 1998-08-03 | 2000-02-01 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
| JP2000058521A (ja) * | 1998-08-08 | 2000-02-25 | Tokyo Electron Ltd | プラズマ研磨装置 |
| US6106634A (en) * | 1999-02-11 | 2000-08-22 | Applied Materials, Inc. | Methods and apparatus for reducing particle contamination during wafer transport |
| JP3160263B2 (ja) * | 1999-05-14 | 2001-04-25 | キヤノン販売株式会社 | プラズマドーピング装置及びプラズマドーピング方法 |
| JP2000331640A (ja) * | 1999-05-21 | 2000-11-30 | Sony Corp | イオン注入装置及びこれを用いた半導体装置の製造方法 |
| US6182604B1 (en) * | 1999-10-27 | 2001-02-06 | Varian Semiconductor Equipment Associates, Inc. | Hollow cathode for plasma doping system |
| JP2002170782A (ja) * | 2000-12-04 | 2002-06-14 | Matsushita Electric Ind Co Ltd | プラズマドーピング方法およびプラズマドーピング装置 |
| US6716727B2 (en) * | 2001-10-26 | 2004-04-06 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for plasma doping and ion implantation in an integrated processing system |
| US20030079688A1 (en) * | 2001-10-26 | 2003-05-01 | Walther Steven R. | Methods and apparatus for plasma doping by anode pulsing |
| US20030101935A1 (en) * | 2001-12-04 | 2003-06-05 | Walther Steven R. | Dose uniformity control for plasma doping systems |
-
2002
- 2002-07-18 US US10/198,370 patent/US20030116089A1/en not_active Abandoned
-
2003
- 2003-07-16 TW TW092119374A patent/TWI328979B/zh not_active IP Right Cessation
- 2003-07-17 KR KR1020057000806A patent/KR100992710B1/ko not_active Expired - Fee Related
- 2003-07-17 EP EP03765701A patent/EP1523756A2/en not_active Withdrawn
- 2003-07-17 CN CNB038171880A patent/CN100431087C/zh not_active Expired - Fee Related
- 2003-07-17 JP JP2004523544A patent/JP4911898B2/ja not_active Expired - Fee Related
- 2003-07-17 WO PCT/US2003/022433 patent/WO2004010458A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US20030116089A1 (en) | 2003-06-26 |
| TW200405767A (en) | 2004-04-01 |
| CN100431087C (zh) | 2008-11-05 |
| EP1523756A2 (en) | 2005-04-20 |
| KR20050019889A (ko) | 2005-03-03 |
| WO2004010458A3 (en) | 2004-05-06 |
| WO2004010458A2 (en) | 2004-01-29 |
| JP4911898B2 (ja) | 2012-04-04 |
| JP2005533391A (ja) | 2005-11-04 |
| CN1669110A (zh) | 2005-09-14 |
| KR100992710B1 (ko) | 2010-11-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |