CN100431087C - 移动靶等离子注入系统和方法 - Google Patents

移动靶等离子注入系统和方法 Download PDF

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Publication number
CN100431087C
CN100431087C CNB038171880A CN03817188A CN100431087C CN 100431087 C CN100431087 C CN 100431087C CN B038171880 A CNB038171880 A CN B038171880A CN 03817188 A CN03817188 A CN 03817188A CN 100431087 C CN100431087 C CN 100431087C
Authority
CN
China
Prior art keywords
plasma
workpiece
wafer
implantation
workpiece support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038171880A
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English (en)
Chinese (zh)
Other versions
CN1669110A (zh
Inventor
史蒂文·R·沃尔特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN1669110A publication Critical patent/CN1669110A/zh
Application granted granted Critical
Publication of CN100431087C publication Critical patent/CN100431087C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNB038171880A 2002-07-18 2003-07-17 移动靶等离子注入系统和方法 Expired - Fee Related CN100431087C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/198,370 2002-07-18
US10/198,370 US20030116089A1 (en) 2001-12-04 2002-07-18 Plasma implantation system and method with target movement

Publications (2)

Publication Number Publication Date
CN1669110A CN1669110A (zh) 2005-09-14
CN100431087C true CN100431087C (zh) 2008-11-05

Family

ID=30769481

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038171880A Expired - Fee Related CN100431087C (zh) 2002-07-18 2003-07-17 移动靶等离子注入系统和方法

Country Status (7)

Country Link
US (1) US20030116089A1 (enExample)
EP (1) EP1523756A2 (enExample)
JP (1) JP4911898B2 (enExample)
KR (1) KR100992710B1 (enExample)
CN (1) CN100431087C (enExample)
TW (1) TWI328979B (enExample)
WO (1) WO2004010458A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7001856B2 (en) * 2003-10-31 2006-02-21 Infineon Technologies Richmond, Lp Method of calculating a pressure compensation recipe for a semiconductor wafer implanter
FR2871812B1 (fr) * 2004-06-16 2008-09-05 Ion Beam Services Sa Implanteur ionique fonctionnant en mode plasma pulse
US7687787B2 (en) * 2005-03-15 2010-03-30 Varian Semiconductor Equipment Associates, Inc. Profile adjustment in plasma ion implanter
TWI404110B (zh) * 2005-03-15 2013-08-01 Varian Semiconductor Equipment 用於工件之電漿植入之方法與電漿摻雜裝置
US20060240651A1 (en) * 2005-04-26 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting ion implant parameters for improved process control
US7820533B2 (en) * 2007-02-16 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Multi-step plasma doping with improved dose control
WO2011155199A1 (ja) * 2010-06-10 2011-12-15 株式会社アルバック 太陽電池製造装置及び太陽電池製造方法
JP5510437B2 (ja) 2011-12-07 2014-06-04 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
KR102312821B1 (ko) * 2016-11-15 2021-10-13 어플라이드 머티어리얼스, 인코포레이티드 이동하는 기판의 완전한 플라즈마 커버리지를 위한 동적 단계적 어레이 플라즈마 소스
KR102861934B1 (ko) 2017-09-26 2025-09-18 램 리써치 코포레이션 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들
US11313039B2 (en) * 2018-05-04 2022-04-26 Jiangsu Favored Nanotechnology Co., LTD Nano-coating protection method for electrical devices
CN109920713B (zh) * 2019-03-08 2020-08-25 中国科学院半导体研究所 无掩膜按需掺杂的离子注入设备及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0636738A (ja) * 1992-07-17 1994-02-10 Tokyo Electron Ltd イオン注入装置
US5326980A (en) * 1991-07-08 1994-07-05 Sony Corporation Ion implanter with plural surface potential sensors
CN1198072A (zh) * 1997-01-09 1998-11-04 易通公司 脉冲阳极等离子体浸没注入
US6020592A (en) * 1998-08-03 2000-02-01 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6403410B1 (en) * 1999-05-14 2002-06-11 Canon Sales Co., Inc. Plasma doping system and plasma doping method

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US4853514A (en) * 1957-06-27 1989-08-01 Lemelson Jerome H Beam apparatus and method
JPS5732378A (en) * 1980-08-05 1982-02-22 Mitsubishi Electric Corp Plasma etching apparatus
JPH0727767B2 (ja) * 1985-07-12 1995-03-29 日新電機株式会社 イオン処理装置
US4899059A (en) * 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US5225366A (en) * 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
US5212425A (en) * 1990-10-10 1993-05-18 Hughes Aircraft Company Ion implantation and surface processing method and apparatus
JPH04336421A (ja) * 1991-05-14 1992-11-24 Mitsubishi Electric Corp イオン注入装置用帯電中和装置
JP3289987B2 (ja) * 1993-04-06 2002-06-10 松下電器産業株式会社 不純物のドーピング方法及びそれに使用する装置
US5354381A (en) * 1993-05-07 1994-10-11 Varian Associates, Inc. Plasma immersion ion implantation (PI3) apparatus
JP3003088B2 (ja) * 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
JPH0974068A (ja) * 1995-09-07 1997-03-18 Hitachi Ltd 薄膜半導体素子の製造方法
JPH09153465A (ja) * 1995-11-30 1997-06-10 Nissin Electric Co Ltd 回転ドラム型イオン注入装置
JP3631850B2 (ja) * 1996-07-02 2005-03-23 矢崎総業株式会社 相対回転部材間継電装置
JPH10223553A (ja) * 1997-02-05 1998-08-21 Nissin Electric Co Ltd イオン注入装置
JP2000243721A (ja) * 1999-02-19 2000-09-08 Toshiba Corp 半導体装置の製造装置
GB2382716B (en) * 1998-07-21 2003-09-03 Applied Materials Inc Ion Implantation Beam Monitor
JP2000058521A (ja) * 1998-08-08 2000-02-25 Tokyo Electron Ltd プラズマ研磨装置
US6106634A (en) * 1999-02-11 2000-08-22 Applied Materials, Inc. Methods and apparatus for reducing particle contamination during wafer transport
JP2000331640A (ja) * 1999-05-21 2000-11-30 Sony Corp イオン注入装置及びこれを用いた半導体装置の製造方法
US6182604B1 (en) * 1999-10-27 2001-02-06 Varian Semiconductor Equipment Associates, Inc. Hollow cathode for plasma doping system
JP2002170782A (ja) * 2000-12-04 2002-06-14 Matsushita Electric Ind Co Ltd プラズマドーピング方法およびプラズマドーピング装置
US6716727B2 (en) * 2001-10-26 2004-04-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for plasma doping and ion implantation in an integrated processing system
US20030079688A1 (en) * 2001-10-26 2003-05-01 Walther Steven R. Methods and apparatus for plasma doping by anode pulsing
US20030101935A1 (en) * 2001-12-04 2003-06-05 Walther Steven R. Dose uniformity control for plasma doping systems

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326980A (en) * 1991-07-08 1994-07-05 Sony Corporation Ion implanter with plural surface potential sensors
JPH0636738A (ja) * 1992-07-17 1994-02-10 Tokyo Electron Ltd イオン注入装置
US5911832A (en) * 1996-10-10 1999-06-15 Eaton Corporation Plasma immersion implantation with pulsed anode
CN1198072A (zh) * 1997-01-09 1998-11-04 易通公司 脉冲阳极等离子体浸没注入
US6020592A (en) * 1998-08-03 2000-02-01 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6403410B1 (en) * 1999-05-14 2002-06-11 Canon Sales Co., Inc. Plasma doping system and plasma doping method

Also Published As

Publication number Publication date
US20030116089A1 (en) 2003-06-26
TW200405767A (en) 2004-04-01
EP1523756A2 (en) 2005-04-20
KR20050019889A (ko) 2005-03-03
WO2004010458A3 (en) 2004-05-06
WO2004010458A2 (en) 2004-01-29
JP4911898B2 (ja) 2012-04-04
TWI328979B (en) 2010-08-11
JP2005533391A (ja) 2005-11-04
CN1669110A (zh) 2005-09-14
KR100992710B1 (ko) 2010-11-05

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081105

Termination date: 20210717

CF01 Termination of patent right due to non-payment of annual fee