CN117524824A - 离子注入机以及离子注入方法 - Google Patents

离子注入机以及离子注入方法 Download PDF

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CN117524824A
CN117524824A CN202311630169.0A CN202311630169A CN117524824A CN 117524824 A CN117524824 A CN 117524824A CN 202311630169 A CN202311630169 A CN 202311630169A CN 117524824 A CN117524824 A CN 117524824A
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target disk
ion implantation
scanning
ion
target
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陈猛
叶斐
张晨膑
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Chongqing Advanced Silicon Technology Co ltd
Shanghai Chaosi Semiconductor Co ltd
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Chongqing Advanced Silicon Technology Co ltd
Shanghai Chaosi Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract

本发明提供了一种离子注入机以及离子注入方法，所述离子注入机包括：靶盘，包括多个沿圆周布置的晶圆放置位，所述靶盘以小于200转/分钟的速度旋转；注入离子源，朝向所述靶盘，沿靶盘的径向对置于晶圆放置位的晶圆表面进行扫描式离子注入，扫描频率大于500Hz。本发明靶盘不再需要沿着垂直于离子注入的方向上下移动实施机械扫描，极大的简化了大盘的运动机构和加工难度。扫描频率设定为大于500Hz的高频扫描，并且靶盘以小于200转/分钟的速度旋转，注入的均匀性仍能满足工艺要求。并且避免了过扫的剂量损失，离子注入机的注入效率提高了一倍以上。

Description

离子注入机以及离子注入方法
技术领域
本发明涉及半导体设备领域，尤其涉及一种离子注入机以及离子注入方法。
背景技术
在氢离子注入剥离加工形成SOI的技术路线上，氢离子注入机是最为关键的机台。现有技术中氢离子注入机均是加上电扫描结合机械扫描的注入方式。附图1A所示是现有技术中一种离子注入机的结构示意图，包括靶盘10、和注入离子源11。靶盘10包括多个沿圆周布置的晶圆放置位101。注入离子源11朝向所述靶盘设置，以将注入离子加速注入到晶圆表面。附图1B是单一扫描位置放大后的扫描路径示意图。扫描路径12是注入离子在靶盘10上扫过的路径。为了全部的区域都能够被注入，靶盘10需要沿着垂直于离子注入的方向上下移动，并且扫描频率只能是20-30Hz。并且为了注入的均匀性，靶盘10需要以大于1000转/分的速度高速旋转。显然上述设计的缺点在于结构复杂，注入效率低。
发明内容
本发明所要解决的技术问题是，提供一种离子注入机以及离子注入方法，结构简单且注入效率高。
为了解决上述问题，本发明提供了一种离子注入机，包括：靶盘，包括多个沿圆周布置的晶圆放置位，所述靶盘以小于200转/分钟的速度旋转；注入离子源，朝向所述靶盘，沿靶盘的径向对置于晶圆放置位的晶圆表面进行扫描式离子注入，扫描频率大于500Hz。
可选的，扫描频率为500-1000Hz。
可选的，靶盘的转动速度为30-200转/分钟。
可选的，注入离子的能量是100KeV～200Kev。
可选的，沿靶盘的径向的扫描式离子注入，注入源在单一周期内的扫描速率与距离靶盘旋转中心的距离成反比。
为了解决上述问题，本发明提供了一种离子注入方法，包括：将待注入晶圆置于一靶盘上，所述靶盘包括多个沿圆周布置的晶圆放置位，所述靶盘以小于200转/分钟的速度旋转；对所述靶盘上的晶圆沿着所述靶盘的径向进行扫描式离子注入，扫描频率大于500Hz。
可选的，扫描频率为500-1000Hz。
可选的，靶盘的转动速度为30-200转/分钟。
可选的，注入离子的能量是100KeV～200Kev。
可选的，沿靶盘的径向的扫描式离子注入，注入源在单一周期内的扫描速率与距离靶盘旋转中心的距离成反比。
本发明靶盘不再需要沿着垂直于离子注入的方向上下移动实施机械扫描，极大的简化了大盘的运动机构和加工难度。扫描频率设定为大于500Hz的高频扫描，并且靶盘以小于200转/分钟的速度旋转，注入的均匀性仍能满足工艺要求。并且避免了过扫的剂量损失，离子注入机的注入效率提高了一倍以上。
附图说明
附图1A所示是现有技术中一种离子注入机的结构示意图。
附图1B是附图1A所示结构中单一扫描位置放大后的扫描路径示意图。
附图2所示是本发明一具体实施方式所述离子注入机的结构示意图。
附图3是附图2所示结构中单一扫描位置放大后的扫描路径示意图。
附图4所示是本发明一具体实施方式所述离子注入方法的步骤示意图。
具体实施方式
下面结合附图对本发明提供的离子注入机以及离子注入方法的具体实施方式做详细说明。
附图2所示是本发明一具体实施方式所述离子注入机的结构示意图，包括：靶盘20、和注入离子源21。靶盘20包括多个沿圆周布置的晶圆放置位201，所述靶盘以小于200转/分钟的速度旋转。注入离子源21朝向所述靶盘设置，以将注入离子加速注入到晶圆表面。在本具体实施方式中，注入离子源21沿靶盘20的径向对置于晶圆放置位201的晶圆表面进行扫描式离子注入，扫描频率大于500Hz。更为优选的，将扫描频率设定为500-1000Hz。靶盘的转动速度设定为30-200转/分钟，注入离子的能量是100KeV～200Kev。
附图3所示是上述具体实施方式中单一扫描位置放大后的扫描路径示意图。扫描路径30是注入离子在靶盘20上扫过的路径。箭头方向为扫描方向，沿着靶盘20的径向从外向内。在其他的具体实施方式中也可以是从内向外或者往复扫描。扫描路径30略大于晶圆的直径，以保证晶圆的全部区域能够被注入。显然这种扫描路径，靶盘20不再需要沿着垂直于离子注入的方向上下移动实施机械扫描，极大的简化了大盘的运动机构和加工难度。取消机械扫描的离子注入机，由于靶盘20和注入离子源21的垂直方向上的相对位置不变，因此可以将扫描频率设定为大于500Hz的高频扫描，并且靶盘以小于200转/分钟的速度旋转，注入的均匀性仍能满足工艺要求。并且，由于采用机械扫描，机械机构的不稳定性决定了在注入过程中需要有大量的过扫设置来确保注入的均匀性，上述离子注入机只采用电扫描技术，极大的避免了过扫的剂量损失，对比同样大小束流注入条件下，可以有更多的离子被注入到晶圆而不是边缘上。实践上，上述离子注入机的注入效率提高了一倍以上。
附图4所示是本发明一具体实施方式所述离子注入方法的步骤示意图，采用上述离子注入机进行离子注入，所实施的步骤包括：步骤S10，将待注入晶圆置于一靶盘上，所述靶盘包括多个沿圆周布置的晶圆放置位，所述靶盘以小于200转/分钟的速度旋转；以及步骤S11，对所述靶盘上的晶圆沿着所述靶盘的径向进行扫描式离子注入，扫描频率大于500Hz。
对上述步骤的解释和限定，可以参阅前一个具体实施方式中对应的内容。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

1.一种离子注入机，其特征在于，包括：
靶盘，包括多个沿圆周布置的晶圆放置位，所述靶盘以小于200转/分钟的速度旋转；
注入离子源，朝向所述靶盘，沿靶盘的径向对置于晶圆放置位的晶圆表面进行扫描式离子注入，扫描频率大于500Hz。
2.根据权利要求1所述的离子注入机，其特征在于，扫描频率为500-1000Hz。
3.根据权利要求1所述的离子注入机，其特征在于，靶盘的转动速度为30-200转/分钟。
4.根据权利要求1所述的离子注入机，其特征在于，注入离子的能量是100KeV～200Kev。
5.根据权利要求1所述的离子注入机，其特征在于，沿靶盘的径向的扫描式离子注入，注入源在单一周期内的扫描速率与距离靶盘旋转中心的距离成反比。
6.一种离子注入方法，其特征在于，包括：
将待注入晶圆置于一靶盘上，所述靶盘包括多个沿圆周布置的晶圆放置位，所述靶盘以小于200转/分钟的速度旋转；
对所述靶盘上的晶圆沿着所述靶盘的径向进行扫描式离子注入，扫描频率大于500Hz。
7.根据权利要求6所述的离子注入方法，其特征在于，扫描频率为500-1000Hz。
8.根据权利要求6所述的离子注入方法，其特征在于，靶盘的转动速度为30-200转/分钟。
9.根据权利要求6所述的离子注入方法，其特征在于，注入离子的能量是100KeV～200Kev。
10.根据权利要求6所述的离子注入方法，其特征在于，沿靶盘的径向的扫描式离子注入，注入源在单一周期内的扫描速率与距离靶盘旋转中心的距离成反比。
CN202311630169.0A 2023-11-30 2023-11-30 离子注入机以及离子注入方法 Pending CN117524824A (zh)

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