TWI328267B - Support ping assembly - Google Patents
Support ping assembly Download PDFInfo
- Publication number
- TWI328267B TWI328267B TW094137903A TW94137903A TWI328267B TW I328267 B TWI328267 B TW I328267B TW 094137903 A TW094137903 A TW 094137903A TW 94137903 A TW94137903 A TW 94137903A TW I328267 B TWI328267 B TW I328267B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- annulus
- peripheral edge
- support
- ring
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 146
- 230000002093 peripheral effect Effects 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 55
- 238000006243 chemical reaction Methods 0.000 claims description 39
- 238000000151 deposition Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 26
- 230000005284 excitation Effects 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000005477 sputtering target Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims 3
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 238000007689 inspection Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 61
- 239000000463 material Substances 0.000 description 14
- 239000010909 process residue Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- -1 Tungsten nitride Chemical class 0.000 description 1
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical group 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 230000017260 vegetative to reproductive phase transition of meristem Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/981,261 US7670436B2 (en) | 2004-11-03 | 2004-11-03 | Support ring assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200629461A TW200629461A (en) | 2006-08-16 |
| TWI328267B true TWI328267B (en) | 2010-08-01 |
Family
ID=36260375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094137903A TWI328267B (en) | 2004-11-03 | 2005-10-28 | Support ping assembly |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7670436B2 (enExample) |
| JP (1) | JP4808467B2 (enExample) |
| KR (1) | KR101267466B1 (enExample) |
| CN (1) | CN100437969C (enExample) |
| TW (1) | TWI328267B (enExample) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7910218B2 (en) | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
| US20060237043A1 (en) * | 2005-04-25 | 2006-10-26 | Applied Materials, Inc. | Method and apparatus for cleaning semiconductor substrates |
| US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
| US7762114B2 (en) | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
| US20070071583A1 (en) * | 2005-09-29 | 2007-03-29 | Stats Chippac Ltd. | Substrate indexing system |
| KR100964775B1 (ko) * | 2005-10-12 | 2010-06-21 | 파나소닉 주식회사 | 플라즈마 처리장치 및 플라즈마 처리방법 |
| US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
| JP4609669B2 (ja) * | 2006-06-27 | 2011-01-12 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 静電チャックモジュール |
| SG177902A1 (en) * | 2006-12-19 | 2012-02-28 | Applied Materials Inc | Non-contact process kit |
| US8221602B2 (en) * | 2006-12-19 | 2012-07-17 | Applied Materials, Inc. | Non-contact process kit |
| US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
| KR101397124B1 (ko) * | 2007-02-28 | 2014-05-19 | 주성엔지니어링(주) | 기판지지프레임 및 이를 포함하는 기판처리장치, 이를이용한 기판의 로딩 및 언로딩 방법 |
| US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| CN101328571B (zh) * | 2007-06-22 | 2012-01-25 | 中芯国际集成电路制造(上海)有限公司 | 物理气相沉积装置及其维护方法 |
| US20090050272A1 (en) * | 2007-08-24 | 2009-02-26 | Applied Materials, Inc. | Deposition ring and cover ring to extend process components life and performance for process chambers |
| KR101571558B1 (ko) * | 2008-04-16 | 2015-11-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 프로세싱 증착 차폐 컴포넌트들 |
| US9062379B2 (en) | 2008-04-16 | 2015-06-23 | Applied Materials, Inc. | Wafer processing deposition shielding components |
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| US8580092B2 (en) | 2010-01-29 | 2013-11-12 | Applied Materials, Inc. | Adjustable process spacing, centering, and improved gas conductance |
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| KR20130095276A (ko) * | 2010-08-20 | 2013-08-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 수명이 연장된 증착 링 |
| CN108359957A (zh) | 2010-10-29 | 2018-08-03 | 应用材料公司 | 用于物理气相沉积腔室的沉积环及静电夹盘 |
| US9719169B2 (en) * | 2010-12-20 | 2017-08-01 | Novellus Systems, Inc. | System and apparatus for flowable deposition in semiconductor fabrication |
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| JP5654939B2 (ja) * | 2011-04-20 | 2015-01-14 | 株式会社アルバック | 成膜装置 |
| US9376752B2 (en) * | 2012-04-06 | 2016-06-28 | Applied Materials, Inc. | Edge ring for a deposition chamber |
| JP2014080645A (ja) * | 2012-10-15 | 2014-05-08 | I Plant:Kk | 基板保持装置 |
| US10727092B2 (en) * | 2012-10-17 | 2020-07-28 | Applied Materials, Inc. | Heated substrate support ring |
| WO2014159222A1 (en) * | 2013-03-14 | 2014-10-02 | Applied Materials, Inc. | Methods and apparatus for processing a substrate using a selectively grounded and movable process kit ring |
| CN105453234B (zh) * | 2013-08-10 | 2018-11-02 | 应用材料公司 | 抛光新的或翻新的静电夹盘的方法 |
| US9799497B2 (en) * | 2013-08-16 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company Limited | Patterned processing kits for material processing |
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| CN109837518B (zh) * | 2017-11-28 | 2021-06-08 | 北京北方华创微电子装备有限公司 | 沉积环固定组件、承载装置及反应腔室 |
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| CN111819679A (zh) | 2018-03-13 | 2020-10-23 | 应用材料公司 | 具有等离子体喷涂涂层的支撑环 |
| US10411448B1 (en) * | 2018-08-20 | 2019-09-10 | Siemens Industry, Inc. | Ring assembly of radially-concentric rings with quick fastening mechanism to detachably connect such rings to one another |
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| US11961723B2 (en) | 2018-12-17 | 2024-04-16 | Applied Materials, Inc. | Process kit having tall deposition ring for PVD chamber |
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| CN115244680A (zh) * | 2020-02-17 | 2022-10-25 | 捷普有限公司 | 用于提供半导体晶片调平边缘的装置、系统和方法 |
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-
2004
- 2004-11-03 US US10/981,261 patent/US7670436B2/en not_active Expired - Lifetime
-
2005
- 2005-10-28 TW TW094137903A patent/TWI328267B/zh active
- 2005-11-02 CN CNB2005101174961A patent/CN100437969C/zh not_active Expired - Lifetime
- 2005-11-03 KR KR1020050104893A patent/KR101267466B1/ko not_active Expired - Lifetime
- 2005-11-04 JP JP2005320823A patent/JP4808467B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP4808467B2 (ja) | 2011-11-02 |
| US7670436B2 (en) | 2010-03-02 |
| TW200629461A (en) | 2006-08-16 |
| KR101267466B1 (ko) | 2013-05-31 |
| CN1790659A (zh) | 2006-06-21 |
| KR20060052443A (ko) | 2006-05-19 |
| JP2006140473A (ja) | 2006-06-01 |
| CN100437969C (zh) | 2008-11-26 |
| US20060090706A1 (en) | 2006-05-04 |
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