CN111819679A - 具有等离子体喷涂涂层的支撑环 - Google Patents

具有等离子体喷涂涂层的支撑环 Download PDF

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CN111819679A
CN111819679A CN201980017607.1A CN201980017607A CN111819679A CN 111819679 A CN111819679 A CN 111819679A CN 201980017607 A CN201980017607 A CN 201980017607A CN 111819679 A CN111819679 A CN 111819679A
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coating
support
ring
substrate
chamber
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吴菅
中川敏行
中西孝之
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Applied Materials Inc
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Abstract

本公开内容涉及用于热处理腔室的支撑环。支撑环具有多晶硅涂层。多晶硅涂层使用等离子体喷涂沉积工艺而形成。

Description

具有等离子体喷涂涂层的支撑环
技术领域
本公开内容的方面一般涉及用以支撑基板的装置和用于形成这种装置的方法。更具体而言，本公开内容的实施方式涉及具有多晶硅涂层的支撑环。
背景技术
在诸如用于制造半导体装置的基板的处理中，半导体基板放置在处理腔室中的基板支撑件上，同时在处理腔室中维持适合的处理条件。在一个实例中，快速热处理(RTP)腔室可用以利用设置于基板下方的灯加热基板。基板使用从灯发射的电磁能量，而可快速地加热至在600℃至1300℃的温度范围之中的提升的温度。在处理期间，基板由例如边缘环的支撑结构支撑，支撑结构设置在基板的周围，且支撑基板的周围。边缘环进一步由例如支撑环的另一支撑结构支撑。
边缘环及支撑环以可承受快速加热及冷却的无数次循环的材料构成。石英为用于支撑环结构的通常材料。基板的上方区域中往往使用对由基板发射的辐射十分灵敏的辐射检测器，以确定基板的温度。避免灯的辐射进入基板上方的区域能够避免此辐射阻碍辐射检测器的效能。因为石英对光及红外能量为透明的，所以石英支撑环可以材料涂布，使其对灯的辐射不透明。
诸如化学气相沉积(CVD)的沉积工艺通常用以形成涂层。然而，这种常规的工艺受到许多限制。举例而言，待涂布的环的尺寸受到用以形成涂层的沉积腔室的尺寸的限制。此外，环的选择区域通常未涂布。CVD工艺牵涉在环上形成昂贵且耗时的掩模，以避免涂层沉积在其遮蔽的部分上。
使用诸如CVD的常规的方法形成的涂层还遭受涂层粘附至下层表面的问题。CVD硅涂层在所形成的硅涂层反复热循环的部分之后开始分层和/或裂开。此分层及裂开在仅少次的热循环之后便可开始。持续的分层及裂开最终导致以硅涂布的石英支撑环无法使用。
因此，存在对于石英支撑环的改良的涂层的需求。
发明内容
在一个方面中，一种处理腔室包括主体，该主体具有侧壁和底部。盖耦接至主体，而在其中限定处理空间。辐射热源设置在处理空间中的底部上，用于在处理操作期间加热基板。基板支撑件也设置于处理空间中。基板支撑件具有边缘环、支撑环及耦接至支撑环的支撑筒。支撑环包括使用等离子体喷涂沉积工艺在其上形成的涂层。
在另一方面中，基板支撑件包括环主体，该主体具有内部边缘、外部边缘、在内部边缘及外部边缘之间延伸的第一侧、及相对于第一侧在内部边缘及外部边缘之间延伸的第二侧。涂层设置于环主体上。涂层通过等离子体喷涂沉积工艺形成。
在另一方面中，公开一种在以石英制成的支撑环上形成涂层的方法。方法包括清洁支撑环、将支撑环定位在沉积区域，其中沉积区域为无尘室(clean room)、及使用等离子体喷涂沉积工艺施加涂层。
附图说明
为了使本公开内容以上所记载的特征得以详细理解，可通过参考实施方式而理解以上简要概述的本公开内容的更具体说明，某些实施方式图示于随附附图中。然而，应理解随附附图仅图示示例性实施方式，且因此不应考虑为对其范围的限制，且可认可其他均等效果的实施方式。
图1为根据本公开内容的一个实施方式的快速热处理腔室的简化的等距视图。
图2为根据本公开内容的一个实施方式的支撑环的部分截面图。
图3为对图2的支撑环的放大部分的部分截面图。
为了促进理解，已尽可能地使用相同的附图标记代表附图中共享的相同元件。应考虑一个实施方式的元件和特征可有益地并入其他实施方式中而无须进一步说明。
具体实施方式
本公开内容涉及用于热处理腔室的支撑环。支撑环具有多晶硅涂层，用于限制由支撑环传输的电磁辐射。多晶硅涂层使用等离子体喷涂沉积工艺形成。
图1描绘根据一个实施方式的快速热处理腔室100的简化的等距视图。处理腔室100包括腔室主体102，该主体具有壁108、底部110和盖112，上述各者限定处理空间120。壁108包括通口148，以促进基板140相对于设置于处理空间120中的基板支撑件104的进入和离开。通口148可耦接至传送腔室(未图示)或负载锁定腔室(未图示)，且可利用例如狭缝阀(未图示)或另一隔绝装置的阀门而选择性地密封。
冷却块180耦接至盖112。一个或多个冷却剂通道184形成于冷却块180中，且通过入口通口181A和出口通口181B与冷却剂源182流体连通。冷却块180可以耐处理环境材料制成，例如不锈钢、铝、聚合物或陶瓷材料等等。诸如水、乙二醇、氮气(N2)或氦气(He)等等的流体流动通过冷却剂通道184，以便将冷却块180维持于指定温度下，或在指定温度范围之中。
辐射热源106设置于处理空间120中，且耦接至腔室底部110。辐射热源106包括以外壳132、窗口114和多个管子160形成的灯组件。各个管子160含有反射器和电磁(EM)辐射源，例如灯。此处，管子160以蜂巢状布置。然而，可利用管子160的其他布置。辐射热源106可进一步划分成加热区，例如EM辐射源的同心环，其中设置于管子160中的EM辐射源控制成发射不同水平的EM辐射。
窗口114和外壳132将管子160与处理空间120隔绝。窗口114以对由辐射热源106发射的EM辐射实质上透明的材料制成，此EM辐射用以加热基板140。窗口114通常以石英制成，尽管也可使用例如蓝宝石的其他材料。提供升降销144而选择性地接触且支撑基板140，以促进基板140传送进入或离开基板支撑件104。
基板支撑件104设置于辐射热源106与冷却块180之间。基板支撑件104包括支撑筒154、支撑环150和边缘环152。支撑环150放置于支撑筒154上。边缘环152放置于且嵌套在支撑环150上。边缘环152具有基板支撑表面，用于接收基板140以进行处理。边缘环152通常以石英、非晶二氧化硅或碳化硅形成，也可使用其他材料。类似地，支撑环150通常以石英或非晶二氧化硅形成，而也可使用其他材料。再者，支撑环150以多晶硅涂层涂布。支撑环150和多晶硅涂层的细节参考图2和图3而论述。
定子组件118设置在腔室主体102外部，且环绕腔室主体壁108。定子组件118磁性耦接至设置于腔室主体102的处理空间120之中的基板支撑件104。基板支撑件104包括作用为转子的磁性部分，因此形成磁性耦合以升降和/或旋转基板支撑件104。定子组件118适以使用耦合于其之间的磁性来旋转和/或举升/降低基板支撑件104。定子组件118中具有多个电线圈(未图示)。在操作期间，定子组件118以限定的间隔施加一序列电流至线圈。在线圈之中的电流建立一连串磁场，此磁场耦合至基板支撑件104的磁性部分。电流以序列方式施加至线圈，使得其中形成的磁场吸引基板支撑件104的磁性部分，且偏转基板支撑件104以围绕直立轴旋转。
大气控制系统164也耦接至腔室主体102的处理空间120。大气控制系统164可包括阀门和/或真空泵，用于控制腔室压力。大气控制系统164也可包括气源，用于提供处理气体或其他类型的气体至处理空间120。
处理腔室100也可包括一个或多个传感器117，所述传感器配置成检测EM辐射。侦测到的EM辐射的特性，例如由传感器117测量的波长或密度，由控制器124使用，以在处理之前、期间和/或之后推论性确定基板140的温度。此处，传感器117穿过盖112设置，而也可使用腔室主体102之中及周围的其他位置而设置。举例而言，传感器117为高温计。传感器117可以以限定感测区域的图案布置，此区域对应至限定用于辐射热源106的加热区。举例而言，传感器117的阵列可以以径向配置而耦接至盖112，以限定整个基板140的感测区域，所述等区域布置为同心环。
在操作期间，基板140定位在处理腔室100中，且在基板支撑件104上。辐射热源106将基板140加热至所欲的处理温度，同时基板支撑件104由定子组件118旋转，因此围绕其中心旋转基板140。气体流至腔室中以在基板140上沉积新的层或对先前沉积的层改质。在完成处理操作之后，基板140可在处理腔室100之中经受另一处理操作。在完成基板140的处理之后，从处理腔室100移除基板140。
图2为根据一个实施方式的支撑环250的截面图。支撑环250可在快速热处理腔室100中使用。支撑环250为环状构件，其具有由内部表面202及外部表面204限定的环主体210。内部表面202及外部表面204围绕支撑环250的中心轴230为同心的。环主体210也具有第一侧206及第二侧208，所述第一侧206及第二侧208在第一环状肩部214及第二环状肩部212之间延伸且耦接至第一环状肩部214及第二环状肩部212。
第一环状肩部214形成于环主体210上的第一侧206，且自第一侧起，于第一侧206及内部表面202之间的接点处延伸。第一环状肩部214以向上代表性的方向(即，离开第二侧208)，从实质上由环主体210的第一侧206限定的平面延伸出去。在一个实施方式中，第一环状肩部214以实质上垂直的方向从第一侧206延伸出去。第一环状肩部214与在匹配支撑构件(未图示，例如图1的边缘环152)上的互补突起接合。
第二环状肩部212形成于环主体210上的第二侧208，且自第二侧起，于第二侧208及外部表面204之间的接点处延伸。此处，第二环状肩部212以向下代表性的方向且相对于第一环状肩部214延伸的方向，从实质上由环主体210的第二侧208限定的平面延伸出去。第二环状肩部212与第三支撑构件(未图示，例如图1的支撑筒154)接合。因此，环状肩部212、214对支撑环250提供相对于边缘环152及支撑筒154的稳固定位。
支撑环250的环主体210由例如石英、碳化硅、氧化硅或陶瓷等等的材料形成。这样的材料用以形成具有其所欲材料特性的环主体210，例如对基板的热处理的高温和/或热膨胀特征所致降级的耐抗性。然而，这样的材料还对用于热处理的EM辐射为透射的。在处理期间，意图限制或甚至避免EM辐射传输通过支撑环250，以便改善由用以确定基板的温度的传感器对辐射的检测，例如图1的传感器117。涂层302设置在第一侧206上，以便使得支撑环250部分或全部对EM辐射的某些或甚至所有波长为不透明的，以下关于图3进一步说明。
图3为具有涂层302的支撑环250的放大部分的部分截面图。在一个实施方式中，涂层302以多结晶硅(多晶硅)材料形成。涂层302具有介于约10微米及约200微米之间的厚度300，例如介于约10微米及约150微米。举例而言，涂层具有介于约20微米及约120微米之间的厚度，例如介于约50微米及约100微米之间。此处，涂层302由三层形成，包括第一层304、第二层306及第三层308。各层304、306、308由等离子体喷涂沉积工艺的个别循环(即，“经过”)以相同的材料形成。再者，各层304、306、308的厚度实质上相等。然而，应考虑涂层302可由单一层形成，或任何其他数量的层形成，例如两层、四层或五层。仍进一步，多个涂层可形成于支撑环250上。还考虑各个涂层和/或层可由不同的材料或材料的组合形成，且各个涂层和/或层可具有不同的厚度。
在一个实施方式中，涂层302均匀地形成在环主体210的整个表面上。在另一实施方式中，涂层302形成于环主体210的选择性位置上。举例而言，涂层302可设置于第一侧206上、第二侧208上、或第一侧206及第二侧208两者上。在一个实施方式中，涂层302整体具有均匀厚度。举例而言，涂层302具有在正负20％以内的厚度变化，例如在正负15％以内的厚度变化，例如在正负10％以内的厚度变化，例如在正负5％以内的厚度变化。在一个实施方式中，涂层302具有在正负40微米以内的厚度变化，例如在正负30微米以内的厚度变化，例如在正负20微米以内的厚度变化，例如在正负100微米以内的厚度变化，例如在正负5微米以内的厚度变化。在另一实施方式中，涂层302整体具有非均匀厚度。举例而言，涂层302可在内部区域具有第一均匀厚度且在外部区域具有不同于第一均匀厚度的第二均匀厚度。在另一实施方式中，涂层302从内部表面处的第一端(例如内部表面202)至径向向外表面处的第二端(例如外部表面204)具有线性增加的厚度。
涂层302针对例如折射率或不透明度的所期望的光学特性而配置，用于减少或避免发射的EM辐射的传输。举例而言，涂层302的厚度及材料可经选择以避免传输在传感器(例如辐射检测器)的操作范围中EM辐射的波长。在一个实施方式中，涂层302具有四或更大的光密度。
涂层302使用等离子体喷涂沉积方法形成。在示例性方法中，首先清洁例如环主体210的部分。此部分接着供应至例如无尘室或通风橱的沉积区域，其中控制污染颗粒以避免其沉积至已清洁的部分上。接着使用等离子体喷涂沉积工艺施加涂层至该部分上。在一个实施方式中，涂层以约垂直于待涂布的表面的喷涂角度施加，例如与垂直于待涂布的表面的轴相差10度以内的角度。举例而言，涂层可以与垂直于待涂布的表面的轴相差5度以内的喷涂角度施加。在沉积期间，沉积区域维持在大气压力及温度下。用以形成涂层的粉末的粒度经控制。沉积的涂层的粒度影响沉积的层的光学特性。涂层材料为多晶硅。
等离子体喷涂沉积方法改善涂层302及环主体210之间的粘附性。再者，待涂布的环主体210的尺寸并未受到等离子体喷涂沉积方法的尺寸限制，因为沉积可在沉积腔室外部执行。仍进一步，涂布的支撑环250的制造费用显著降低，因为等离子体喷涂沉积方法可在大气压力及温度下实行。在掩模应用中，当环主体210的部分需维持未涂布时，则等离子体喷涂沉积方法允许使用具成本效益的掩模技术，例如施加铁氟龙胶带至部分的表面上，其中此部分并非意图形成涂层，此归因于所使用的大气条件，而消除昂贵的掩模夹具或类似者的利用。通过使用此处所述的等离子体喷涂方法，涂层302在石英支撑环及其上形成的涂层的层之间提供有良好的界面粘附性、涂层材料中较少的金属污染物、及高光密度以减少或避免电磁辐射的传输。
尽管上文涉及本公开内容的实施方式，可设计本公开内容的其他及更多实施方式而不背离其基本范围，且本公开内容的范围由随附权利要求书来确定。

Claims (15)

1.一种用于处理基板的腔室，包含：
主体，具有侧壁和底部；
盖，耦接至所述主体，而在其中限定处理空间；
辐射热源，耦接至所述底部；和
基板支撑件，设置于所述处理空间中，所述基板支撑件包含：
边缘环；
支撑筒；和
支撑环，耦接至所述支撑筒且配置成支撑所述边缘环，所述支撑环具有使用等离子体喷涂沉积工艺在所述支撑环上形成的涂层，所述涂层整体具有均匀厚度。
2.如权利要求1所述的腔室，其中所述支撑环以石英形成。
3.如权利要求1所述的腔室，其中所述涂层为多晶硅涂层。
4.如权利要求3所述的腔室，其中所述涂层具有介于10微米及200微米之间的厚度。
5.如权利要求4所述的腔室，其中所述涂层包含多于一个层。
6.如权利要求2所述的腔室，其中所述涂层具有至少4的光密度值。
7.一种基板支撑件，包含：
环主体，包含：
内部边缘；
外部边缘；
第一侧，所述第一侧在所述内部边缘及所述外部边缘之间延伸；和
第二侧，所述第二侧相对于所述第一侧在所述内部边缘及所述外部边缘之间延伸；和
涂层，设置于所述环主体上，所述涂层整体具有均匀厚度，且其中所述涂层通过等离子体喷涂沉积工艺而形成。
8.如权利要求7所述的基板支撑件，其中所述环主体以石英形成。
9.如权利要求7所述的基板支撑件，其中所述涂层为多晶硅涂层。
10.如权利要求9所述的基板支撑件，其中所述涂层具有介于约10微米及约200微米之间的厚度。
11.如权利要求10所述的基板支撑件，其中所述涂层包含多于一个层。
12.如权利要求7所述的基板支撑件，其中所述涂层具有至少4的光密度值。
13.如权利要求7所述的基板支撑件，其中所述环主体进一步包含从所述第一侧延伸的第一环状肩部，及从所述第二侧延伸的第二环状肩部，所述等第一环状肩部及第二环状肩部彼此以相反的方向延伸。
14.一种在支撑环上形成涂层的方法，包含以下步骤：
清洁支撑环，其中所述支撑环以石英形成；
将所述支撑环提供至沉积区域，其中所述沉积区域为无尘室；和
使用等离子体喷涂沉积工艺施加涂层，所述涂层整体具有均匀厚度。
15.如权利要求16所述的方法，其中所述涂层为多晶硅涂层。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7379993B2 (ja) * 2019-09-20 2023-11-15 東京エレクトロン株式会社 エッチング装置及びエッチング方法
WO2022055813A1 (en) * 2020-09-10 2022-03-17 Lam Research Corporation Spinel coating for plasma processing chamber components
US20220349088A1 (en) * 2021-04-28 2022-11-03 Applied Materials, Inc. In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1574208A (zh) * 2003-06-16 2005-02-02 应用材料公司 用于热处理室的圆筒
CN102210017A (zh) * 2008-11-06 2011-10-05 应用材料股份有限公司 含有微定位系统的快速热处理腔室
US20140094039A1 (en) * 2012-09-28 2014-04-03 Applied Materials, Inc. Edge ring lip
CN103718283A (zh) * 2011-07-29 2014-04-09 应用材料公司 用于改良的浸透性能的具有涂层的基板支撑边缘环
US20140265101A1 (en) * 2013-03-14 2014-09-18 Applied Materials, Inc. Minimal contact edge ring for rapid thermal processing
CN104718610A (zh) * 2012-10-17 2015-06-17 应用材料公司 用于快速热处理的最小接触边缘环
CN105453248A (zh) * 2013-08-15 2016-03-30 应用材料公司 用于热处理腔室的支撑圆柱
CN105830207A (zh) * 2013-12-31 2016-08-03 应用材料公司 具有屏蔽边缘的支撑环

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6179466B1 (en) 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6110025A (en) 1997-05-07 2000-08-29 Obsidian, Inc. Containment ring for substrate carrier apparatus
US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
US6264467B1 (en) 1999-04-14 2001-07-24 Applied Materials, Inc. Micro grooved support surface for reducing substrate wear and slip formation
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
US7252738B2 (en) 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US7713841B2 (en) 2003-09-19 2010-05-11 Micron Technology, Inc. Methods for thinning semiconductor substrates that employ support structures formed on the substrates
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US8057602B2 (en) 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
JP2009054984A (ja) * 2007-08-01 2009-03-12 Tosoh Corp 成膜装置部品及びその製造方法
JP5482282B2 (ja) * 2009-03-03 2014-05-07 東京エレクトロン株式会社 載置台構造及び成膜装置
US20150079370A1 (en) * 2013-09-18 2015-03-19 Applied Materials, Inc. Coating architecture for plasma sprayed chamber components
CN111584396B (zh) * 2013-11-06 2023-09-01 应用材料公司 溶胶凝胶涂布的支撑环
WO2016032789A1 (en) * 2014-08-25 2016-03-03 General Electric Company Article for high temperature service
US10482305B1 (en) * 2016-01-06 2019-11-19 Apple Inc. Electronic devices with thin-film masking layers
US11008655B2 (en) 2016-03-03 2021-05-18 Lam Research Corporation Components such as edge rings including chemical vapor deposition (CVD) diamond coating with high purity SP3 bonds for plasma processing systems
US20230295789A1 (en) * 2022-03-15 2023-09-21 Applied Materials, Inc. Dense vertically segmented silicon coating for low defectivity in high-temperature rapid thermal processing

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1574208A (zh) * 2003-06-16 2005-02-02 应用材料公司 用于热处理室的圆筒
CN102210017A (zh) * 2008-11-06 2011-10-05 应用材料股份有限公司 含有微定位系统的快速热处理腔室
CN103718283A (zh) * 2011-07-29 2014-04-09 应用材料公司 用于改良的浸透性能的具有涂层的基板支撑边缘环
US20140094039A1 (en) * 2012-09-28 2014-04-03 Applied Materials, Inc. Edge ring lip
CN104718610A (zh) * 2012-10-17 2015-06-17 应用材料公司 用于快速热处理的最小接触边缘环
US20140265101A1 (en) * 2013-03-14 2014-09-18 Applied Materials, Inc. Minimal contact edge ring for rapid thermal processing
CN105453248A (zh) * 2013-08-15 2016-03-30 应用材料公司 用于热处理腔室的支撑圆柱
CN105830207A (zh) * 2013-12-31 2016-08-03 应用材料公司 具有屏蔽边缘的支撑环

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WO2019177837A1 (en) 2019-09-19
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