TWI327752B - A plasma processing chamber for generating plasma - Google Patents
A plasma processing chamber for generating plasma Download PDFInfo
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- TWI327752B TWI327752B TW092136273A TW92136273A TWI327752B TW I327752 B TWI327752 B TW I327752B TW 092136273 A TW092136273 A TW 092136273A TW 92136273 A TW92136273 A TW 92136273A TW I327752 B TWI327752 B TW I327752B
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- 238000012545 processing Methods 0.000 title claims description 59
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000003990 capacitor Substances 0.000 claims description 35
- 239000002002 slurry Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 27
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000008878 coupling Effects 0.000 abstract 4
- 238000010168 coupling process Methods 0.000 abstract 4
- 238000005859 coupling reaction Methods 0.000 abstract 4
- 239000007789 gas Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 8
- 230000000452 restraining effect Effects 0.000 description 7
- 230000009977 dual effect Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000001846 repelling effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
1327752 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係有關半導體製造。更明確言之,本發明係有 關在半導體製造期間中之電漿處理。 【先前技術】 在半導體基礎之裝置(例如積體電路或平板顯示器) 之製造中’材料層可自晶圓或基體(例如半導體晶圓或玻 璃板)交替沉積及蝕刻。如本藝中所知,沉積層之蝕刻 可由各種技術達成,包含電漿加強蝕刻。在電漿加強蝕刻 中,晶圓或基體之實際蝕刻發生於電處理室內。在餓刻程 序之期間中,由適當之蝕刻來源氣體形成電漿,以蝕刻晶 圓或基體之未由蔽罩保護之區域,留下所需之圖案。 有二種電漿使用於電漿加強之蝕刻中,即拘束之電漿 及不拘束之電漿。不拘束之電漿接觸電漿處理室壁,且可 由室壁再沉積原子於晶圓或基體上,污染晶圓或基體。電 漿處理室壁普通爲不能與晶圓或基體相容之材料製造。由 拘束電漿,甚少或無污染,因爲電漿由一些裝置停止,不 到達室壁。如此,拘束之電漿提供未由熟悉之未拘束電漿 所提供之淸潔程度。 在先前技藝系統中,可由建立各種電或磁性質之排斥 場,防止電漿到達室壁。例如’由置於室壁內之多個拘束 環,及使電漿剛可到達拘束環之內限界之前排出,拘束該 電漿。由於拘束環爲絕緣材料所製,此等充電至與電漿相 •4- (2) (2)1327752 當之電位。結果’自拘束環之前邊緣發射一排斥電場,此 防止電漿朝室壁伸出任何更遠。 參考圖 1,其中顯示一例解之先前技藝系統 100, 具有處理室,此產生電容交連之 RF電漿,作爲實例且 非限制,例解之系統爲一EXELAN系統,由 Lam硏究 公司製造。例解之系統1〇〇包含一平行板電漿反應爐, 諸如反應爐 100。反應爐 100包含一室,具有一內部 102,由連接至反應爐之室壁中之一出口之真空泵維持於 所需之真空壓力。軸刻氣體可供應至電發反應爐,由氣體 供應器1 06供應氣體。例如,可由雙頻安排在反應爐中 產生中密度電漿,其中,RF能量自RF來源 108供應 通過一匹配網路至一電力電極 ]12〇RF來源 108 經組態,以供應在 27MHz 及 2 Μ Η z 之 R F 電力。電 極]】4爲接地電極。一晶圓或基體 116由電力電極 112支持’並由激勵蝕刻氣體至電漿狀態所產生之電漿 倉虫刻。多個拘束環 120a及 120b拘束電發。亦可使用 其他電容交連之反應爐,諸如其中 RF電力供應至二電 極之反應爐,諸如共擁有之美專利6,090,304所述之雙 頻電漿蝕刻反應爐,其整個列作參考。 參考圖2’其中顯示電漿處理室ι〇〇之內部ι〇2 之斷面圖。內部102包含拘束環i2〇a及i2〇be雖僅 顯不一拘束環’但可設置任何數目之拘束環。在電费處理 室100之內部102’顯示一電力電極]22,其上適合 接受一晶圓或基體124。電力電極124可由任何適當之 (3) (3)1327752 卡盤系統’例如靜電’機械’夾持,真空等實施,且由絕 緣體〗2 6,諸如石英焦點環環繞。在蝕刻期間中,r f電 源 128可連通具有頻率約 2MHz至約 27MHz之 RF 電力至電力電極122。在晶圓或基體】24上方,設置一 接地電極130,此連接至拘束環]20a及120b。另一接 地電極132推壓於絕緣環126,並置於電力電極附近。 在操作中’RF電源 128連通 RF 電力至電力電極 122,此電交連至接地電極 130。 【發明內容】 本發明提供一種控制室內之離子能量及電漿密度之系 統及方法,該室經組態以產生電漿,在例解實施例中,電 漿由電容交連放電產生。半導體室包含一電力電極,一電 源,多個接地電極,及連接至地之一可調整電路。電力電 極經組態,以接受一晶圓或基體。電源在操作上連接至電 力電極。多個接地電極經組態,以產生與電力電極之電交 連。接地電極之至少之一電連接至連接至地之可調整電路 。連接至地之可調整電路經組態,以修改接地電極之阻抗 ◊離子能量由連接至地之可調整電路控制。電漿密度由電 源控制。 連接至地之可調整電路包含一電容器或一電感器或其 組合。在一實施例,電容器爲可變電容器。在另—實施例 ,電容器可具有固定電容。亦可使用固定及可變電容器及 電感器之組合。在另一實施,使用諸如具有可變電感之電 -6- (4) (4)1327752 感器取代電容器。在又另一實施例’使用電容器及電感器 之組合作爲連接至地之可調整電路° 在操作中,例解之室經組態,以產生一拘束之電漿, 此由多個拘束環拘束。在例解之實施例中,有一第一接地 電極電連接至連接至地之一可調整電路。連接至地之可調 整連接提供具有第一阻抗之第一接地電極。第一接地電極 之第一阻抗取決於連接至地可調整電路中所用之電容器或 電感器。一第二接地電極及第三接地電極直接連接至地。 在例解之實施例中,第一接地電極之第一阻抗大於黃他電 極之阻抗。由於接地電極之阻抗之此等改變之結果,可控 制電漿之離子能量。在例解之實例中,具有較高阻抗之第 一接地電極轉移離子能量離開第一接地電極至其他接地電 極。 而且,提供用以控制電漿處理室中之電漿之一種方法 。該方法包含在電漿處理室中接收一氣體之第一步驟。電 力電極經組態,以接受一晶圓或基體,並接收來自電源之 電力。由電交連電力電極至一第一接地電極及一第二接地 電極,產生電漿。使用接地電極之阻抗,以控制離子能量 。使用電源控制電漿密度。 【實施方式】 在以下詳細說明中,參考附圖,此構成本申請書之一 部份。附圖以例解顯示可實施本發明之特定實施例。應明 瞭亦可使用其他實施例’且可作結構改變,而不脫離本發 (5) 1327752 明之範圍。 參考圖 3,其中顯示電漿處理室之一第一 具有連接至地之可調整電路。圖 3爲處理室 面圖,經組態以產生電容交連放電。電漿處理i 指一系統。在操作中,電漿處理室 200經組態 變換爲電漿之氣體。作爲實例且非限制,相當高 率打進電漿處理室中。 電漿處理室 200 包含一電力電極 202 2〇4,及—第—接地電極 206具有一連接至地之 路 20 8。電力電極 202適於接受一晶圓或基體 極 202在操作上連接至電源 204,經組態以 電力。作爲實例且非限制,第一接地電極具有一 電力電極 202 之面積。而且,作爲實例且非限 204爲 rf電源。 石英焦點環 2 10環繞電力電極 202。而且 接地電極環 212環繞第一接地電極 206。第二 212電連接至地,且並無連接至地之可調整電 三接地電極 214置於石英焦點環 210下方。 電極 214亦不包含耦合至地可調整電路。 電漿處理皺 2 0 0經組態,以產生拘束之電 環 2 1 6 a及 2 1 6 b經組態,以拘束電發。電發 普通爲不與晶圓或基體相容之材料所製。拘束之 甚少或無來自處理室壁之污染β精於本藝之人士 拘束之電漿提供一淸潔程度’此未由熟知之未拘 貫施例, 200 之斷 I 2 0 0 亦 ,以接收 之氣體流 ,一電源 可調整電 。電力電 產生 RF 面積小於 制,電源 ,一第二 接地電極 路。一第 第三接地 漿。拘束 處理室壁 電漿提供 應明瞭, 束電漿提 -8- (6) (6)1327752 供。 連接至地之可調整電路 20 8電連接至第一接地電極 206。連接至地之可調整電路 2 0 8 經組態,以修改第一 接地電極 206之阻抗。拘束電漿之離子能量及電漿密度 由連接至地之可調整電路 208控制。連接至地之可調整 電路 208包含一電容器 218。電容器 218具有固定電 容普通小於 l〇〇〇pf。然而,精於本藝之人士應明瞭,電 容器 218亦可爲可變電容器。 連接至地之可調整電路 208 之電容器 218及電阻 器 220 產生一第一阻抗,此與第二接地電極 212及第 三接地電極 214之阻抗不同。由於接地電極之阻抗之此 等改變之結果,可控制電漿之離子能量及電漿密度。在第 一實施例,具有連接至地之可調整電路 208之第一接地 電極 206 具有較之第二接地電極 212及第三接地電極 214 二者爲高之阻抗。第一接地電極之較高阻抗轉移離 子能量及電漿密度離開第一接地電極,俾離子能量及電漿 密度轉移至具有較低阻抗之接地電極。 在先前技藝中,使用例如 27MHz及 2MHzRF之電 源於獨立控制電漿密度及離子能量。在此,處理室 200 許可由 RF電源獨立控制電漿密度及離子能量。連接至 地之可調整電路 208聯同接地電極許可由一個 RF電 源獨立控製離子能量。電漿密度主要由電源 204所供應 之總電力控制。 例解之機械模型用以確認能控制離子能量及電漿密度 -9- (7) (7)1327752 。還回參考圖 1及圖 2之先前技藝處理室,1 200V(峰 至峰)及 27MHz RF電力供應至底電極 122,結果之 DC偏壓接近 3 02V及電漿電極電壓爲 - 8 5 8V。現參考 圖 3,例解之連接至地之可調整電路包含一電容器 218 具有一電容 2pF,及一電阻器 220具有電阻3 αΩ。 在處理室 200,1100V 及 27MHz RF 電力供應至電力 電極 202,以達成與由處理室 100所產生之電漿相似之 電漿密度及電漿分佈。而且,由於在第一接地電極上之阻 抗之改變,DC 偏壓僅爲 -200V,及電漿電極電壓爲 659V。此例解實例淸楚顯示在處理室 200內之電漿密度 及離子能量可由修改 RF電力及使用連接至地之可調整 電路控制。 參考圖 4,其中顯示另一處理室 2 5 0,經組態以控 制離子能量及電漿密度。一電力電極 25 2在操作上連接 至電源 254。一石英焦點環 256 環繞電力電極 252。 一電漿產生於處理室 250內,並由拘束環 258拘束。 弟一接地電極 260具有一表面積大於第一電力電極 252 。第一接地電極 260電連接至一可變電容器262,此許 可可調整連接至地。作爲實例並非限制,可變電容器 262 具有電容範圍 5pF至 lOOOpF。一第二接地極 264 爲一接地環,此環繞第一接地電極 260。第二接地電極 264在操作上連接至另—可變電容器 266。一第三接地 電極268置於石英焦點環2 5 6下面。 在操作中,處理室 250許可較之處理室 200爲高 -10- (8) 1327752 之離子能量控制程度。提高之控制由具有連接至 調整電路提供。第一接地電極 260及第二接地 具有電容用以修改其各別阻抗。結果,操作者可 制拘束電漿之”頂部"。 參考圖 5,其中顯示又另一處理室 3 00, 至地之可調整電路。處理室300與圖 4 之處 有許多共同,諸如拘束環,一焦點環,一電力電 電源。二處理室間之不同在於接地電極。處理室 含一第一接地電極3 02在操作上連接至可變電 。一第二接地電極 3 (Μ爲一環,此環繞第一 3 02。一第三接地電極 308置於電力電極鄰近 電容器 310電連接至第三接地電極。 在操作中,預期處理室 300中之接地電極 可操作者控制拘束電漿頂部及束電漿側方上之離 精於本藝之人士應明瞭第二接地電極 306亦可 連接至地之可調整電路,以控制其各別阻抗。 參考圖 6,其中顯示一處理室 350,具有 極。第一接地電極352接地,並具有面積小於 353。第二接地電極354爲一環,此環繞第一 352。第二接地電極 354電連接至一可變電容^ 並具有一可變阻抗。第三接地電極358爲另一 繞第二接地電極 354。第三接地電極358在操 至一可變電容器 360,且亦具有一可變阻抗。 地電極3 62置於電力電極 353附近,且在操 地之二可 電極 2 6 4 更有效控 具有連接 理室 250 極,及一 3 00 包 容器 304 接地電極 。一可變 之組合許 子能量。 適合具有 四接地電 電力電極 接地電極 器 3 5 6, 環,此環 作上連接 —第四接 作上連接 -11 - (9) (9)1327752 至一可變電容器 364。在操作中,此處理室 350許可操 作者控制拘束電漿之側方上之離子能量。 參考圖 7,其中顯示處理室 400,具有雙頻電源 402。作爲實例且非限制,雙頻電源產生 27MHz及 2MHz 之 RF 電力。電力電極 4 04 在操作上連接至雙 頻電源 402。一第一接地電極 406電連接至連接至地之 可調整電路 408。連接至地之可調整電路 408包含一可 變電容器 410,及一電感器 412,及一電阻器 414。連 接至地之可調整電路 408經組態,俾作用如高通濾波器 或低通濾波器,並許可控制第一接地電極 406 之阻抗 。一第二接地電極 416環繞第一接地電極406»第二接 地電極 416並不包含連接至地之可調整電路。一第三接 地電極 418鄰接電力電極 404。第三接地電極電連接至 電感器 420。 在操作中,可由使用一電感器 418取代電容器,控 制第三接地電極。精於本藝之人士應明瞭電感器亦可爲一 可變電感器,經組態以產生多種不同之阻抗,此由工具操 作者控制。 而且,可由連接至地之可調整電路之可變電容器 410控制第一接地電極 410之阻抗。而且,可使用連接 至地之可調整電路 408以濾去雙頻電源 402之27 MHz RF 電力或 2MHz RF 電力之任一。 參考圖 8,其中顯示由使用上述各種系統,控制一 處理室中之電漿之方法之流程圖。該方法在處理步驟 •12- 1327752 do) 4 5 2初始化’在此,建立電漿處理室之操作參數。操作 參數爲所執行之工作型式所特定。作爲實例且非限制,在 蝕刻處理,選擇氣體型式,並決定每一氣體之氣體流率。 然後輸入特定工作之操作壓力於工具中。而且,亦提供所 施加之 RF電力之量。又且’亦提供執行例解蝕刻操作 所需之時間。或且’上述系統亦適合工作於電漿協助之化 學蒸氣沉積。該方法然後進行至處理步驟 454,在此, 在處理方塊1 5 2中所辨認之例解控制參數到達備妥狀態 ,且到達所需之設定點。 該方法然後進行至處理方塊 456,在此,RF電力連 通至電力電極。在例解上,以上系統指一單個電力電極, 然而,精於本藝之人士應明瞭具有本說明之優點,本專利 所述之系統及方法可應用於具有多個電力電極之處理室。 在例解方法之處理方塊 458,然後產生一拘束之電 漿。一旦產生該電漿,則決定應否修改離子能量及電漿密 度。在決定菱塊 460中作此決定。如決定修改拘束電漿 之離子能量’則該方法進行處理方塊 462,在此修改可 調整之連接電路。如應更改電漿密度,則該方法進行至處 理方塊 463’並修改電力,以控制電漿密度。可調整連 接電路由修接地電極之阻抗控制離子能量。電漿密度可由 電源控制。 如在決定菱塊 460中決定電漿之性質爲可接受,則 該方法然後進行至處理方塊 464,在此處理基體或晶圓 。普通精於本藝之人士應明瞭具有本說明之優點,連接至 -13- (11) 1327752 地之可調整電路可經組態,俾例解之拘束電漿具有所需之 離子能量及能漿密度。 雖以上說明包含許多不同之實施例,但應不解釋此等 爲限制本發明之範圍,而是僅提供例解本發明之一些現較 宜之實施例。故此’本發明之範圍應由後附申請專利及其 法律相等者,而非由所提供之例解實例決定。
【圖式簡單說明】 本發明之較宜實施例顯示於附圖中,其中: 圖 1爲先前系統,具有產生電容交連電漿之一處理 室。 圖 2爲圖1所示之電漿處理室之內部之斷面圖。 圖 3爲具有連接至地之可調整電路之電漿處理室之 第一實施例之斷面圖。
圖 4爲具有連接至地之可調整電路之電漿處理室之 第二實施例之斷面圖。 圖 5爲具有連接至地之可調整電路之電漿處理室之 第三實施例之斷面圖。 圖 6爲具有連接至地之可調整電路之電漿處理室之 第四實施例之斷面圖。 圖 7爲具有連接至地之可調整電路之電漿處理室之 第五實施例之斷面圖。 圖 8爲用以控制處理室中之電漿之方法之流程圖。 -14 - (12)1327752 主要元件對照表 1 00 系統 100,200,250 電漿處理室 1 02 內部 1 04 真空泵 1 06 氣體供應器 108 RF來源 1 1 0 匹配網路 112,122 電力電極 114 電極 116,124 晶圓或基體 120,2 16 拘束環 1 26,25 8 絕緣環 1 28 RF電源 1 3 0,2 06,3 02 接地電極 202,252,3 5 3 電力電極 204,254 電源 208,408 地電路 210,256 石英焦點環 21 2 接地電極環 21 8 電容器 22 0 電阻器 262,3 04,3 5 6,4 1 0 可變電容器 402 雙頻率電源 -15- (13) 1327752 420,4 1 8 電感器 -16
Claims (1)
1327752 ^ φ 外年3月日修(更)正本 拾、申請專利範圍 附件5 :第92 1 3 62 73號專利申請案 中文申請專利範圍替換本 • 民國99年3月11曰修正 1·—種用以產生電漿之電漿處理室,該電漿處理室 包含: 一電力電極,經組態以接受一晶圓或基體; 一第一接地電極,置於與該電力電極相對,其中該電 漿被產生於該電力電極與該第一接地電極之間; 一第二接地電極,環繞該第一接地電極;及 一連接至地之可調整電路,電連接至該第一接地電極 ,該第一接地電極經由該連接至地之可調整電路電連接至 地,該可調整電路經組態,以修改該第一接地電極之阻抗 ,該第二接地電極電連接至地,而沒有經由任何電容器連 接至地,其中該連接至地之可調整電路包含至少一電容器 及一電阻器,該電容器經由該電阻器連接至地。 2-如申請專利範圍第 1項所述之電漿處理室,其 中該連接至地之可調整電路包括至少一可變電容器及該電 阻器,該可變電容器經由該電阻器電連接至地。 3. 如申請專利範圍第 1項所述之電漿處理室,其 中該連接至地之可調整電路包括至少一電容器,該電容器 具有一固定電容* 4. 如申請專利範圍第 1項所述之電漿處理室,其 1327752 中該連接至地之可調整電路包括至少一電容器,該電容器 之電容爲小於lOOOpf。 5.如申請專利範圍第 4項所述之電漿處理室,其 中該連接至地之可調整電路包括至少一電.容器,該電容器 之電容爲2pf。 6. 如申請專利範圍第 1項所述之電漿處理室,其 中該連接至地之可調整電路包括至少一電阻器。
7. 如申請專利範圍第 6 項所述之電漿處理室,其 中該電阻器之電阻爲3微歐姆。 8. 如申請專利範圍第 1項所述之電漿處理室,其 中該連接至地之可調整電路包括至少一電阻器及一電容器 9. 如申請專利範圍第 1項所述之電漿處理室,其 中該第一接地電極之阻抗不同於該第二接地電極之阻抗。 10. 如申請專利範圍第 1項所述之電漿處理室,其 # 中該第一接地電極之阻抗高於該第二接地電極之阻抗。 11. 如申請專利範圍第 1項所述之電漿處理室,其 中該電力電極只與單一電源連接。 12. 如申請專利範圍第 1項所述之電漿處理室,另 包含: ~焦點環,該焦點環環繞該電力電極;及 一第三接地電極,該第三接地電極置於該焦點環下方 ) 其中該第一接地電極之阻抗不同於該第三接地電極之 -2- 1327752 阻抗。 1 3 .如申請專利範圍第 1 2項所述之電漿處理室, 其中該第一接地電極之阻抗高於該第三接地電極之阻抗。 14. 如申請專利範圍第 1項所述之電漿處理室,另 包含最多一電源,該最多一電源與該電力電極連接。 15. 如申請專利範圍第 1項所述之電漿處理室,另 包含一拘束環,其中該第二接地電極置於該拘束環與該第 一接地電極之間。 16. 如申請專利範圍第 12 項所述之電漿處理室, 其中該第一接地電極經由該連接至地之可調整電路接地。 1 7.如申請專利範圍第 1 2 項所述之電漿處理室, 其中該第二接地電極沒有經由任何該連接至地之可調整電 路接地。 1 8 .如申請專利範圍第 1 2項所述之電漿處理室, 其中該第一接地電極之表面面向該電力電極之表面,且 該第一接地電極之該表面的面積小於該電力電極之該 表面的面積。 19.如申請專利範圍第 6項所述之電漿處理室,其 中該第二接地電極的至少一部份與該電力電極的至少一部 份重疊。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI606754B (zh) * | 2011-11-22 | 2017-11-21 | 蘭姆研究公司 | 電漿邊緣區域之控制系統與方法 |
Families Citing this family (161)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040118344A1 (en) * | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
JP4553247B2 (ja) * | 2004-04-30 | 2010-09-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4628696B2 (ja) * | 2004-06-03 | 2011-02-09 | 東京エレクトロン株式会社 | プラズマcvd装置 |
US20060000799A1 (en) * | 2004-06-30 | 2006-01-05 | Hyun-Ho Doh | Methods and apparatus for determining endpoint in a plasma processing system |
KR20060005560A (ko) * | 2004-07-13 | 2006-01-18 | 삼성전자주식회사 | 플라즈마를 이용하는 반도체 소자 제조 장비 |
US7845309B2 (en) * | 2004-07-13 | 2010-12-07 | Nordson Corporation | Ultra high speed uniform plasma processing system |
JP4628874B2 (ja) * | 2005-06-03 | 2011-02-09 | 東京エレクトロン株式会社 | プラズマ処理装置及び電位制御装置 |
US7988814B2 (en) * | 2006-03-17 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
US20070221332A1 (en) * | 2006-03-22 | 2007-09-27 | Tokyo Electron Limited | Plasma processing apparatus |
US7517437B2 (en) * | 2006-03-29 | 2009-04-14 | Applied Materials, Inc. | RF powered target for increasing deposition uniformity in sputtering systems |
US7611603B2 (en) * | 2006-03-31 | 2009-11-03 | Tokyo Electron Limited | Plasma processing apparatus having impedance varying electrodes |
US7932181B2 (en) * | 2006-06-20 | 2011-04-26 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
US7837826B2 (en) * | 2006-07-18 | 2010-11-23 | Lam Research Corporation | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof |
US20080156772A1 (en) * | 2006-12-29 | 2008-07-03 | Yunsang Kim | Method and apparatus for wafer edge processing |
JP5160802B2 (ja) * | 2007-03-27 | 2013-03-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5348848B2 (ja) * | 2007-03-28 | 2013-11-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20170213734A9 (en) * | 2007-03-30 | 2017-07-27 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
US8450635B2 (en) | 2007-03-30 | 2013-05-28 | Lam Research Corporation | Method and apparatus for inducing DC voltage on wafer-facing electrode |
US8563619B2 (en) * | 2007-06-28 | 2013-10-22 | Lam Research Corporation | Methods and arrangements for plasma processing system with tunable capacitance |
JP2009081812A (ja) * | 2007-09-27 | 2009-04-16 | Nec Electronics Corp | 信号処理装置および信号処理方法 |
JP5165993B2 (ja) * | 2007-10-18 | 2013-03-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN101478857A (zh) * | 2008-01-04 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理装置 |
US8522715B2 (en) * | 2008-01-08 | 2013-09-03 | Lam Research Corporation | Methods and apparatus for a wide conductance kit |
JP2009187673A (ja) * | 2008-02-01 | 2009-08-20 | Nec Electronics Corp | プラズマ処理装置及び方法 |
US8920611B2 (en) * | 2008-07-15 | 2014-12-30 | Applied Materials, Inc. | Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning |
US9887069B2 (en) * | 2008-12-19 | 2018-02-06 | Lam Research Corporation | Controlling ion energy distribution in plasma processing systems |
JP5350043B2 (ja) | 2009-03-31 | 2013-11-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US9275838B2 (en) * | 2009-09-02 | 2016-03-01 | Lam Research Corporation | Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof |
JP5606063B2 (ja) * | 2009-12-28 | 2014-10-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
JP2012004160A (ja) * | 2010-06-14 | 2012-01-05 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
CN102395243A (zh) * | 2011-10-19 | 2012-03-28 | 中微半导体设备(上海)有限公司 | 改进等离子均匀性和效率的电感耦合等离子装置 |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
TWM440606U (en) | 2012-04-13 | 2012-11-01 | Ajoho Entpr Co Ltd | Network signal coupling circuit |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) * | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9337000B2 (en) | 2013-10-01 | 2016-05-10 | Lam Research Corporation | Control of impedance of RF return path |
US9401264B2 (en) | 2013-10-01 | 2016-07-26 | Lam Research Corporation | Control of impedance of RF delivery path |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
KR102156894B1 (ko) * | 2013-03-07 | 2020-09-17 | 세메스 주식회사 | 기판 처리 장치 및 플라즈마 제어 방법 |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
KR102038647B1 (ko) * | 2013-06-21 | 2019-10-30 | 주식회사 원익아이피에스 | 기판 지지 장치 및 이를 구비하는 기판 처리 장치 |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US9232626B2 (en) | 2013-11-04 | 2016-01-05 | Kla-Tencor Corporation | Wafer grounding using localized plasma source |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
WO2015099892A1 (en) * | 2013-12-23 | 2015-07-02 | Applied Materials, Inc. | Extreme edge and skew control in icp plasma reactor |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9472410B2 (en) * | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9211500B2 (en) * | 2014-04-29 | 2015-12-15 | Korea Institute Of Machinery & Materials | Plasma reactor for abating hazardous material |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9490116B2 (en) | 2015-01-09 | 2016-11-08 | Applied Materials, Inc. | Gate stack materials for semiconductor applications for lithographic overlay improvement |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
CN107305830B (zh) * | 2016-04-20 | 2020-02-11 | 中微半导体设备(上海)股份有限公司 | 电容耦合等离子体处理装置与等离子体处理方法 |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
KR101881779B1 (ko) * | 2017-10-31 | 2018-07-25 | 에스케이 텔레콤주식회사 | 이온트랩 장치를 위한 필터 및 그 설계방법 |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
KR102512209B1 (ko) * | 2018-11-16 | 2023-03-21 | 주식회사 원익아이피에스 | 기판처리장치 |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US20200395199A1 (en) * | 2019-06-14 | 2020-12-17 | Asm Ip Holding B.V. | Substrate treatment apparatus and method of cleaning inside of chamber |
CN112151343B (zh) * | 2019-06-28 | 2023-03-24 | 中微半导体设备(上海)股份有限公司 | 一种电容耦合等离子体处理装置及其方法 |
KR102279639B1 (ko) * | 2019-07-09 | 2021-07-20 | 한양대학교 산학협력단 | 기판 처리 장치 |
CN110379701A (zh) * | 2019-07-24 | 2019-10-25 | 沈阳拓荆科技有限公司 | 具有可调射频组件的晶圆支撑座 |
CN112530776B (zh) * | 2019-09-18 | 2024-02-09 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置 |
KR20210042653A (ko) * | 2019-10-10 | 2021-04-20 | 주성엔지니어링(주) | 기판 처리 장치 |
USD943539S1 (en) | 2020-03-19 | 2022-02-15 | Applied Materials, Inc. | Confinement plate for a substrate processing chamber |
USD979524S1 (en) | 2020-03-19 | 2023-02-28 | Applied Materials, Inc. | Confinement liner for a substrate processing chamber |
US11380524B2 (en) | 2020-03-19 | 2022-07-05 | Applied Materials, Inc. | Low resistance confinement liner for use in plasma chamber |
CN113808900B (zh) * | 2020-06-17 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其约束环组件与方法 |
CN114023620B (zh) * | 2021-10-29 | 2023-07-14 | 德鸿半导体设备(浙江)有限公司 | 一种用于处理基片的处理站 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58158929A (ja) * | 1982-03-17 | 1983-09-21 | Kokusai Electric Co Ltd | プラズマ発生装置 |
US4464223A (en) * | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
JPS60189925A (ja) * | 1984-03-10 | 1985-09-27 | Anelva Corp | 高周波放電反応装置 |
JPS61166028A (ja) * | 1985-01-17 | 1986-07-26 | Anelva Corp | ドライエツチング装置 |
JPS61174633A (ja) * | 1985-01-29 | 1986-08-06 | Ulvac Corp | スパッタエッチング装置 |
JPS61175633A (ja) | 1985-01-30 | 1986-08-07 | Toshiba Corp | 画像形成装置 |
JPS61176633A (ja) | 1985-01-31 | 1986-08-08 | Mitsubishi Rayon Co Ltd | 複合プリプレグ |
JPH029115A (ja) * | 1988-06-28 | 1990-01-12 | Mitsubishi Electric Corp | 半導体製造装置 |
JPH04157164A (ja) * | 1990-10-18 | 1992-05-29 | Canon Inc | プラズマ処理装置 |
JPH05234697A (ja) * | 1992-02-19 | 1993-09-10 | Hitachi Ltd | マイクロ波プラズマ処理装置 |
JPH0661185A (ja) * | 1992-08-06 | 1994-03-04 | Tokyo Electron Ltd | プラズマ処理装置 |
KR0141659B1 (ko) * | 1993-07-19 | 1998-07-15 | 가나이 쓰토무 | 이물제거 방법 및 장치 |
KR100302167B1 (ko) * | 1993-11-05 | 2001-11-22 | 히가시 데쓰로 | 플라즈마처리장치및플라즈마처리방법 |
JP2956494B2 (ja) | 1994-10-26 | 1999-10-04 | 住友金属工業株式会社 | プラズマ処理装置 |
JPH08321488A (ja) * | 1995-05-26 | 1996-12-03 | Sony Corp | ドライエッチング方法及びマグネトロンrie装置 |
US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
US6051284A (en) * | 1996-05-08 | 2000-04-18 | Applied Materials, Inc. | Chamber monitoring and adjustment by plasma RF metrology |
US5925519A (en) | 1996-06-03 | 1999-07-20 | The Regents Of The University Of California | Genetic alterations associated with prostate cancer |
JP3022806B2 (ja) * | 1997-05-15 | 2000-03-21 | 九州日本電気株式会社 | 半導体装置の製造装置及びその調整方法 |
US6008130A (en) * | 1997-08-14 | 1999-12-28 | Vlsi Technology, Inc. | Polymer adhesive plasma confinement ring |
US6090304A (en) * | 1997-08-28 | 2000-07-18 | Lam Research Corporation | Methods for selective plasma etch |
US5998932A (en) * | 1998-06-26 | 1999-12-07 | Lam Research Corporation | Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber |
US6350317B1 (en) * | 1999-12-30 | 2002-02-26 | Lam Research Corporation | Linear drive system for use in a plasma processing system |
US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
US6677711B2 (en) | 2001-06-07 | 2004-01-13 | Lam Research Corporation | Plasma processor method and apparatus |
US6770166B1 (en) * | 2001-06-29 | 2004-08-03 | Lam Research Corp. | Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor |
US6984288B2 (en) * | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
US6844560B2 (en) | 2001-08-13 | 2005-01-18 | Mapper Lithography Ip B.V. | Lithography system comprising a converter plate and means for protecting the converter plate |
US6706138B2 (en) | 2001-08-16 | 2004-03-16 | Applied Materials Inc. | Adjustable dual frequency voltage dividing plasma reactor |
US6744212B2 (en) * | 2002-02-14 | 2004-06-01 | Lam Research Corporation | Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions |
US7086347B2 (en) * | 2002-05-06 | 2006-08-08 | Lam Research Corporation | Apparatus and methods for minimizing arcing in a plasma processing chamber |
US20040118344A1 (en) * | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
-
2002
- 2002-12-20 US US10/326,918 patent/US20040118344A1/en not_active Abandoned
-
2003
- 2003-12-17 EP EP03814023.2A patent/EP1573795B1/en not_active Expired - Lifetime
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2005
- 2005-11-16 US US11/282,106 patent/US8518211B2/en not_active Expired - Lifetime
-
2013
- 2013-07-26 US US13/952,055 patent/US9190302B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI606754B (zh) * | 2011-11-22 | 2017-11-21 | 蘭姆研究公司 | 電漿邊緣區域之控制系統與方法 |
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JP5129433B2 (ja) | 2013-01-30 |
CN1726584A (zh) | 2006-01-25 |
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