JP5129433B2 - プラズマ処理チャンバ - Google Patents
プラズマ処理チャンバ Download PDFInfo
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- JP5129433B2 JP5129433B2 JP2004563595A JP2004563595A JP5129433B2 JP 5129433 B2 JP5129433 B2 JP 5129433B2 JP 2004563595 A JP2004563595 A JP 2004563595A JP 2004563595 A JP2004563595 A JP 2004563595A JP 5129433 B2 JP5129433 B2 JP 5129433B2
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- ground electrode
- processing chamber
- electrode
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- 239000003990 capacitor Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 14
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005530 etching Methods 0.000 description 8
- 230000009977 dual effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000452 restraining effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
電力供給部で制御される。
202 作動電極
204 電力供給部
206 第1接地電極
208 可調整接地回路
212 第2接地電極
258 拘束リング
262 可変キャパシタ
412 インダクタ
Claims (16)
- プラズマを発生させるためのプラズマ処理チャンバであって、
ウェハーまたは基板を受領するように設計された作動電極と、
該作動電極に対向して配置された第1の接地電極と、
前記第1の接地電極を取り囲む第2の接地電極と、
前記第1の接地電極に電気的に接続された可調整接地連結回路と、
を含んでおり、前記プラズマは前記作動電極と前記第1の接地電極との間で発生するように設計されており、前記第1の接地電極は前記可調整接地連結回路を通して接地されており、前記可調整接地連結回路は前記第1の接地電極のインピーダンスを修正するように設計されており、前記第2の接地電極は、キャパシタを通さずに接地されており、前記可調整接地連結回路は、少なくとも一つのキャパシタと、レジスタとを含んでおり、前記キャパシタは前記レジスタを通して接地されており、
前記作動電極を取り囲む焦点リングと、この焦点リングの下に配置され、可変キャパシタを通して接地されている第3の接地電極を含み、前記第1の接地電極のインピーダンスは、前記可調整接地連結回路により制御され、尚且つ、前記第3の接地電極のインピーダンスは、前記可変キャパシタにより調節されることで、前記第1の接地電極のインピーダンスと前記第3の接地電極のインピーダンスとは異なること
を特徴とするプラズマ処理チャンバ。 - 可調整接地連結回路は少なくとも一つの可変キャパシタとレジスタとを含んでおり、前記可調整接地連結回路は前記レジスタを通して接地されていることを特徴とする請求項1記載のプラズマ処理チャンバ。
- 可調整接地連結回路は少なくとも一つのキャパシタを含んでおり、このキャパシタは固定キャパシタンスを有することを特徴とする請求項1記載のプラズマ処理チャンバ。
- 可調整接地連結回路は少なくとも一つのキャパシタを含んでおり、このキャパシタのキャパシタンスは1000pf未満であることを特徴とする請求項1記載のプラズマ処理チャンバ。
- キャパシタのキャパシタンスは2pfであることを特徴とする請求項4記載のプラズマ処理チャンバ。
- 可調整接地連結回路は少なくとも一つのレジスタを含むことを特徴とする請求項1記載のプラズマ処理チャンバ。
- レジスタの抵抗は3μΩであることを特徴とする請求項6記載のプラズマ処理チャンバ。
- 可調整接地連結回路は少なくとも一つのレジスタおよび少なくとも一つのキャパシタを含むことを特徴とする請求項1に記載のプラズマ処理チャンバ。
- 第1の接地電極のインピーダンスは第2の接地電極のインピーダンスとは異なることを特徴とする請求項1に記載のプラズマ処理チャンバ。
- 第1の接地電極のインピーダンスは第2の接地電極のインピーダンスよりも高いことを特徴とする請求項1記載のプラズマ処理チャンバ。
- 作動電極は単一の電力供給部のみに連結されていることを特徴とする請求項1記載のプラズマ処理チャンバ。
- 第1の接地電極のインピーダンスは第3の接地電極のインピーダンスよりも高いことを特徴とする請求項1記載のプラズマ処理チャンバ。
- 最大で一つの電力供給部を更に含んでおり、この最大で一つの電力供給部は作動電極に連結されていることを特徴とする請求項1記載のプラズマ処理チャンバ。
- 拘束リングを更に含んでおり、第2の接地電極は前記拘束リングと第1の接地電極との間に配置されることを特徴とする請求項1記載のプラズマ処理チャンバ。
- 第1の接地電極の表面が作動電極の表面と向かい合っており、前記第1の接地電極の表面の面積が前記作動電極の表面の面積よりも小さいことを特徴とする請求項1記載のプラズマ処理チャンバ。
- 第2の接地電極の少なくとも一部が作動電極の少なくとも一部と重なることを特徴とする請求項1記載のプラズマ処理チャンバ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/326,918 | 2002-12-20 | ||
US10/326,918 US20040118344A1 (en) | 2002-12-20 | 2002-12-20 | System and method for controlling plasma with an adjustable coupling to ground circuit |
PCT/US2003/039994 WO2004059716A1 (en) | 2002-12-20 | 2003-12-17 | A system and method for controlling plasma with an adjustable coupling to ground circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006511059A JP2006511059A (ja) | 2006-03-30 |
JP5129433B2 true JP5129433B2 (ja) | 2013-01-30 |
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ID=32594132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004563595A Expired - Lifetime JP5129433B2 (ja) | 2002-12-20 | 2003-12-17 | プラズマ処理チャンバ |
Country Status (8)
Country | Link |
---|---|
US (3) | US20040118344A1 (ja) |
EP (1) | EP1573795B1 (ja) |
JP (1) | JP5129433B2 (ja) |
KR (1) | KR101029948B1 (ja) |
CN (1) | CN100380606C (ja) |
AU (1) | AU2003297165A1 (ja) |
TW (1) | TWI327752B (ja) |
WO (1) | WO2004059716A1 (ja) |
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US20130306240A1 (en) | 2013-11-21 |
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US20060112878A1 (en) | 2006-06-01 |
KR20050089976A (ko) | 2005-09-09 |
EP1573795A4 (en) | 2007-07-18 |
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