TWI319219B - - Google Patents
Info
- Publication number
- TWI319219B TWI319219B TW092120003A TW92120003A TWI319219B TW I319219 B TWI319219 B TW I319219B TW 092120003 A TW092120003 A TW 092120003A TW 92120003 A TW92120003 A TW 92120003A TW I319219 B TWI319219 B TW I319219B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7888—Transistors programmable by two single electrons
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002213900A JP4056817B2 (ja) | 2002-07-23 | 2002-07-23 | 不揮発性半導体記憶素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200402849A TW200402849A (en) | 2004-02-16 |
TWI319219B true TWI319219B (zh) | 2010-01-01 |
Family
ID=30767855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092120003A TW200402849A (en) | 2002-07-23 | 2003-07-22 | Nonvolatile semiconductor memory device and manufacturing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US7550802B2 (zh) |
EP (1) | EP1536483A4 (zh) |
JP (1) | JP4056817B2 (zh) |
KR (1) | KR100958556B1 (zh) |
AU (1) | AU2003252675A1 (zh) |
TW (1) | TW200402849A (zh) |
WO (1) | WO2004010508A1 (zh) |
Families Citing this family (82)
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JP4056817B2 (ja) | 2002-07-23 | 2008-03-05 | 光正 小柳 | 不揮発性半導体記憶素子の製造方法 |
DE60325254D1 (de) * | 2002-08-23 | 2009-01-22 | Gen Electric | Mmuner alarmsignalerzeugungs-rauchdetektor |
KR100446632B1 (ko) * | 2002-10-14 | 2004-09-04 | 삼성전자주식회사 | 비휘발성 sonsnos 메모리 |
ZA200506095B (en) * | 2003-01-30 | 2006-10-25 | Univ Cape Town | A thin film semiconductor device and method of manufacturing a thin film semiconductor device |
US7083586B2 (en) * | 2003-02-03 | 2006-08-01 | Dj Orthopedics, Llc | Patellofemoral brace |
US20050095786A1 (en) * | 2003-11-03 | 2005-05-05 | Ting-Chang Chang | Non-volatile memory and method of manufacturing floating gate |
TWI276206B (en) * | 2003-11-25 | 2007-03-11 | Promos Technologies Inc | Method for fabricating flash memory device and structure thereof |
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US8088483B1 (en) | 2004-06-08 | 2012-01-03 | Nanosys, Inc. | Process for group 10 metal nanostructure synthesis and compositions made using same |
US8563133B2 (en) * | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
TWI406890B (zh) * | 2004-06-08 | 2013-09-01 | Sandisk Corp | 奈米結構之沉積後包封:併入該包封體之組成物、裝置及系統 |
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JP5481468B2 (ja) * | 2004-12-10 | 2014-04-23 | 株式会社東芝 | 半導体装置 |
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CN103824888A (zh) * | 2014-02-28 | 2014-05-28 | 苏州大学 | 一种具有微浮结构的半导体器件 |
US9735359B2 (en) * | 2014-04-23 | 2017-08-15 | Micron Technology, Inc. | Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures |
US9466731B2 (en) * | 2014-08-12 | 2016-10-11 | Empire Technology Development Llc | Dual channel memory |
US20220005932A1 (en) * | 2018-11-13 | 2022-01-06 | Khalifa University of Science and Technology | Non-volatile memory systems based on single nanoparticles for compact and high data storage electronic devices |
CN109576659A (zh) * | 2019-01-10 | 2019-04-05 | 广东省测试分析研究所(中国广州分析测试中心) | 梯度自掺杂纯相多元金属氧化物薄膜的磁控溅射制备方法 |
CN111834393B (zh) * | 2019-04-22 | 2022-12-02 | 辽宁冷芯半导体科技有限公司 | 基于铝纳米晶浮栅的柔性碳纳米管光电记忆存储器 |
CN112908999A (zh) * | 2021-03-25 | 2021-06-04 | 复旦大学 | 半浮栅存储器的制造工艺及半浮栅存储器 |
CN112909000B (zh) * | 2021-03-25 | 2022-10-21 | 复旦大学 | 半浮栅存储器及其制造工艺 |
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2002
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2003
- 2003-07-22 TW TW092120003A patent/TW200402849A/zh not_active IP Right Cessation
- 2003-07-23 WO PCT/JP2003/009335 patent/WO2004010508A1/ja active Application Filing
- 2003-07-23 AU AU2003252675A patent/AU2003252675A1/en not_active Abandoned
- 2003-07-23 KR KR1020057000573A patent/KR100958556B1/ko not_active IP Right Cessation
- 2003-07-23 EP EP03765365A patent/EP1536483A4/en not_active Withdrawn
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Also Published As
Publication number | Publication date |
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JP4056817B2 (ja) | 2008-03-05 |
AU2003252675A1 (en) | 2004-02-09 |
KR20050025350A (ko) | 2005-03-14 |
TW200402849A (en) | 2004-02-16 |
JP2004055969A (ja) | 2004-02-19 |
KR100958556B1 (ko) | 2010-05-18 |
US7550802B2 (en) | 2009-06-23 |
US20050122775A1 (en) | 2005-06-09 |
EP1536483A4 (en) | 2008-07-16 |
EP1536483A1 (en) | 2005-06-01 |
WO2004010508A1 (ja) | 2004-01-29 |
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