TWI309757B - Thinner composition for removing photosensitive resin - Google Patents

Thinner composition for removing photosensitive resin Download PDF

Info

Publication number
TWI309757B
TWI309757B TW093114977A TW93114977A TWI309757B TW I309757 B TWI309757 B TW I309757B TW 093114977 A TW093114977 A TW 093114977A TW 93114977 A TW93114977 A TW 93114977A TW I309757 B TWI309757 B TW I309757B
Authority
TW
Taiwan
Prior art keywords
parts
weight
propylene glycol
glycolate
ether
Prior art date
Application number
TW093114977A
Other languages
English (en)
Chinese (zh)
Other versions
TW200504205A (en
Inventor
Suk-Il Yoon
Woo-Sik Jun
Hee-Jin Park
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200504205A publication Critical patent/TW200504205A/zh
Application granted granted Critical
Publication of TWI309757B publication Critical patent/TWI309757B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/423Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials For Photolithography (AREA)
TW093114977A 2003-06-03 2004-05-26 Thinner composition for removing photosensitive resin TWI309757B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030035683A KR100951364B1 (ko) 2003-06-03 2003-06-03 포토레지스트 제거용 씬너 조성물

Publications (2)

Publication Number Publication Date
TW200504205A TW200504205A (en) 2005-02-01
TWI309757B true TWI309757B (en) 2009-05-11

Family

ID=36819234

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114977A TWI309757B (en) 2003-06-03 2004-05-26 Thinner composition for removing photosensitive resin

Country Status (5)

Country Link
JP (1) JP4512092B2 (ko)
KR (1) KR100951364B1 (ko)
CN (1) CN100578367C (ko)
TW (1) TWI309757B (ko)
WO (1) WO2004107057A1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4236198B2 (ja) * 2004-12-28 2009-03-11 東京応化工業株式会社 リソグラフィー用洗浄液及びそれを用いた半導体基材形成方法
CN1800988B (zh) * 2005-01-06 2010-04-07 新应材股份有限公司 光阻清洗剂
EP1904899A4 (en) * 2005-07-19 2012-04-25 Showa Denko Kk ELIMINATION SOLUTION FOR PHOTOSENSITIVE COMPOSITION
JP4698515B2 (ja) * 2005-07-19 2011-06-08 昭和電工株式会社 感光性組成物除去液
JP4762867B2 (ja) * 2005-12-02 2011-08-31 東京応化工業株式会社 ホトリソグラフィ用洗浄液およびこれを用いた基板の洗浄方法
JP4643467B2 (ja) * 2006-02-23 2011-03-02 東京応化工業株式会社 リソグラフィー用洗浄液、およびこれを用いた基材の洗浄方法、並びに薬液供給装置の洗浄方法
US8021490B2 (en) 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
US20120108067A1 (en) * 2010-10-29 2012-05-03 Neisser Mark O Edge Bead Remover For Coatings
KR101886750B1 (ko) * 2011-09-22 2018-08-13 삼성전자 주식회사 Rrc 공정용 씨너 조성물과 그의 공급 장치 및 ebr 공정용 씨너 조성물
WO2014104192A1 (ja) * 2012-12-27 2014-07-03 富士フイルム株式会社 レジスト除去液およびレジスト剥離方法
KR102492889B1 (ko) * 2014-12-18 2023-01-30 주식회사 동진쎄미켐 신너 조성물

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3246403A1 (de) * 1982-12-15 1984-06-20 Merck Patent Gmbh, 6100 Darmstadt Verfahren zur entwicklung von reliefstrukturen auf der basis von strahlungsvernetzten polymervorstufen hochwaermebestaendiger polymere
JPS6369563A (ja) * 1986-09-12 1988-03-29 Hitachi Ltd 塗布方法および装置
JP3464299B2 (ja) * 1994-11-07 2003-11-05 ナガセケムテックス株式会社 フォトレジスト剥離剤組成物
KR100363272B1 (ko) * 2000-07-13 2002-12-05 주식회사 동진쎄미켐 박막 트랜지스터 액정표시소자용 포토레지스트를 제거하기위한 씬너 조성물
KR20020037665A (ko) * 2000-11-14 2002-05-22 주식회사 동진쎄미켐 감광성 수지 조성물 제거용 씬너 조성물
KR100742120B1 (ko) * 2001-05-23 2007-07-24 주식회사 동진쎄미켐 감광성 수지 조성물 제거용 씬너 조성물
KR100843984B1 (ko) * 2002-02-22 2008-07-07 주식회사 동진쎄미켐 감광성 수지 조성물을 제거하기 위한 씬너 조성물
KR100503967B1 (ko) * 2002-03-29 2005-07-26 주식회사 동진쎄미켐 감광성 수지 제거용 씬너 조성물

Also Published As

Publication number Publication date
JP2007531898A (ja) 2007-11-08
CN1799007A (zh) 2006-07-05
KR100951364B1 (ko) 2010-04-08
KR20040104161A (ko) 2004-12-10
WO2004107057A1 (en) 2004-12-09
CN100578367C (zh) 2010-01-06
TW200504205A (en) 2005-02-01
JP4512092B2 (ja) 2010-07-28

Similar Documents

Publication Publication Date Title
US7387988B2 (en) Thinner composition and method of removing photoresist using the same
TWI454523B (zh) 用於微電子基板之濕蝕刻加工之旋轉保護塗層
TWI352261B (en) Porous sublayer coating and sublayer coating-formi
TWI309757B (en) Thinner composition for removing photosensitive resin
EP3894534B1 (en) Method for cleaning a substrate and method for manufacturing device
JPH07128867A (ja) レジスト洗浄除去用溶剤及びそれを使用する電子部品製造用基材の製造方法
TW202031883A (zh) 基板洗淨液、使用其之經洗淨之基板的製造方法及裝置之製造方法
JP4669737B2 (ja) フォトレジスト除去用シンナー組成物及びそれを用いた半導体装置又は液晶表示装置の製造方法
JP4538294B2 (ja) フォトレジスト除去用シンナー組成物
US5637436A (en) Method for removing photoresist composition from substrate surfaces
KR20170057536A (ko) 포토레지스트 도포장비 세정용 씬너 조성물
US10048584B2 (en) Thinner composition
TW201030111A (en) Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
WO2000031781A1 (fr) Procede relatif a la formation d'un motif de resist
TWI226978B (en) Thinner composition for removing photosensitive resin
JP4391376B2 (ja) フォトレジスト除去用シンナー組成物
TWI325097B (en) Resist composition and organic solvent for removing resist
KR20180050978A (ko) 감광성 수지 및 반사방지막의 도포성 향상 및 제거용 신너 조성물
KR20110016137A (ko) 감광성 수지 제거용 씬너 조성물
TWI306184B (en) Thinner composition for removing photosensitive resin
KR20080099413A (ko) 감광성 수지 제거용 씬너 조성물
KR101858257B1 (ko) 감광성 수지 또는 반사 방지막 제거용 신너 조성물 및 이를 사용한 반도체 소자 또는 박막트랜지스터 액정 표시 소자의 제조방법
KR20110016138A (ko) 감광성 수지 제거용 씬너 조성물
KR20180050979A (ko) 감광성 수지 및 반사방지막의 도포성 향상 및 제거용 신너 조성물
KR101109057B1 (ko) 포토레지스트 제거용 씬너 조성물

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent