TWI309075B - Method for fabricating semiconductor device - Google Patents

Method for fabricating semiconductor device Download PDF

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TWI309075B
TWI309075B TW095119353A TW95119353A TWI309075B TW I309075 B TWI309075 B TW I309075B TW 095119353 A TW095119353 A TW 095119353A TW 95119353 A TW95119353 A TW 95119353A TW I309075 B TWI309075 B TW I309075B
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gate
film
hard mask
insulating film
mask layer
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TW095119353A
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TW200729410A (en
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Jin Bae Kim
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Hynix Semiconductor Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)

Description

1309075 九、發明說明： 【發明所屬之技術領域】 本發明案相關於一種用於製造記憶體元件之方法，本 發明更特別相關於一種用於製造一半導體元件的方法，其 中當雜質離子係注射入位元線接觸區域之半導體基板内部 ’’—、、，邑緣膜代替一光阻膜填充於閘極結構之間，並且該 絕緣膜係被移除以將位元線接觸區域曝光而不需蝕刻掉殘 餘物，因此減少了單元電晶體之漏電流。 【先前技術】 ,第1圖係一簡化後之剖面圖，其說明一般習知的製造 半導體元件之方法。 參考第1圖，一閘極絕緣膜30形成於半導體基板1〇 :面’該半導體基板10具有一元件隔離結構2〇。一閑極 :層（並未顯示）以及一閘極硬遮罩層（並未顯示）形 產物的整個表面上方1用一閉極遮罩（並未顯
構60 ::W層與閉極導電層㈣卓，以形成閉極結 ，二3閘極電極45與閘極硬遮罩層圖樣μ之堆疊 ::=ΓΓ極結…滿的光阻膜(並未顯 曝光並顯影以形成光阻膜圖樣80 ^)將光阻膜 位元線接觸區…半導:基：：：阻膜圖…- 射入半導體基^反該半導體基板^^ ’雜質離子係注 作為離子植入遮罩， " 利用光阻膜圖樣80 “ 在位元線接觸區域85的底邻㈣ 根據上述製造半導體元件的方法 =輕先。 尤組膜殘餘物會在 5 1309075 形成光阻膜圖樣的過程期間殘留在位元線接觸區域的底部 ^其將位TL線接觸區域之半導體基板曝光），因為當半導 體凡件的設計規則減少時間極結構之間的間隙變的狹窄， ^匕產生了在接下來的離子植人過程中由在位元線接觸區 ^光阻膜殘餘物所導致^件漏電流。不像其他的遮罩 在閘極結構上方與閘極結構之間的位元線接觸區域 光阻膜必須經由曝光與顯影過程被移除。除 達SoooA的額外眼朵# 』 τ ^ 觸光阻殘餘物仍會留在位元線接 =^之間極結構的侧邊牆部上，結果會造成對於後續的 入過程中讓該有的邊限實質減小。 【發明内容】 ::據本發明’提供一種用於製造記憶體元件之 =二寺別是本發明提供一種用於製造半導體元件之方法技 :、田雜質離子係注射入位元線接觸區域之半導體基板內 :時，-絕緣膜代替-光阻膜填充於閘極結== 遠絕緣膜係被移除以腺# _ & 偁之間並且 殘餘物，因此減；了 :線接觸區域曝光而不需物 威^ 了早7〇電晶體之漏電流。 在本發明之實施例中，製造半導體元件之方 m成問極結構’其包含在具有元件隔離結構的半導體 :板上的問極電極與閉極硬遮罩層之堆 ：導體 ==填一構；⑺選—： (d)將曝光之::::線!觸區域之半導體基板曝光； 以及“）移除該絕緣膜。 料植入過程； 1309075 式 方 施 實 關於本發明之示乾性貫施例將會詳 本發明的所有地方以及圖式中’相同的部件或是類似的部 件將會使用相同的參考元件符號。應了解的是，所提供的 實施例係對於習知技術者所敘述且教示，因此在此敘述的 實施例可以以不背離本發明之範疇的方式修改。 第2a圖至第2e圖係簡化的剖面圖，其根據本發明之 實施例，說明用以製造半導體基板之方法。 參考第2a圖與第2b圖，閘極絕緣膜13〇形成於半導 體基板110之上方，該半導體基板具有元件隔離結構12〇。 閘極導電層140與閘極硬遮罩層150形成於閘極絕緣膜13( 上方。其次，利用閘極遮罩（並未顯示）將閘極硬遮罩層 150與閘極導電層140圖樣化作為蝕刻遮罩，以形成閘極 結構160,其包含閘極電極145與閘極硬遮罩層圖樣 之一堆疊結構。之後，填充滿閘極結構16〇之一絕緣膜ΐ7( 係形成。絕緣膜m被平面化，直到閘極硬遮罩層圖樣ΐ5ί 被曝光。在本發明之—實施例中，絕緣膜m之厚度為約 0A到約5_人的範圍内。另外，閘極硬遮罩層15〇愈 絕緣膜17G係以具有不__㈣㈣㈣㈣ =氧化物膜形成閘極硬料4 15G，㈣氮化物膜形成絕 M 17G°在另"'實施例中，閘極硬遮罩I 150以氮化物 膜形成而絕緣膜170以氧化物膜形成。 麥考第2c圖與第2(1圖，— 大入田％太此1 光阻Μ (並未顯不）形成 方：取後產物的整個平面上， 並且利用位元線接觸遮罩（並 7 1309075 未顯示）將其曝光並顯影以形成光阻膜圖樣18〇,其定義 位元線接觸區域185。曝光於光阻膜圖樣18〇之底部的絕 緣膜m係移除以將閘㈣緣膜13G曝光於位元線接觸區 域185之底部。之後，C_HAL〇離子植入過程係實施，其 利用光阻膜圖樣180與閘極結構16〇作為離子植入遮罩以 形成在半導體基板110之離子植入區域（並未顯示），其 位於所曝光之閘極絕緣膜130下方。在一實施例中，位^ 線接觸㈣185之絕緣膜17G的移除過程係以閑極硬遮罩 層150與絕緣膜17〇兩者之間的蝕刻選擇性做實施❶另外， 絕緣膜170之移除過程係利用包含HF或是b〇e (緩衝氧 化物韻刻冑，Buffered 〇xide Etehant)之—濕钱刻方法。 參考第2e圖’光阻膜圖樣18〇係移除。絕緣膜17〇係 利用一濕蝕刻方法移除。在本發明之一實施財，光阻膜 圖樣180之移除過程係利絲（〇2)之等離子體所實施。、 在另一實施例+，絕緣膜17〇之移除過程係利肖h BOE所實施^ 另外在後續的製程中，可以實施下列製裎，例如：形 成區域的製程，形成在閘極結構的侧邊牆部上之一間 ^ °。的製私，形成在主動區域的源極/汲極區域之離子植 入過^，形成焊盤插角的過程，形成位元線接點與位元線 ' 形成電容器之過程與形成互連線的過程等等。 上所述，根據本發明實施例之用以製造半導體美板 的方法提供了將絕緣膜代替光阻膜填充於閘極結構，以用 於C-HAL0離子植入製程，而非利用一濕姓刻方法移除位 1309075 兀線接觸區域之絕緣膜’因此可輕易的實施用以將位元線 接觸區域之半導體基板曝光的遮罩製程，並且減少單元 晶體之漏電流。 將可了解的疋，以上所敘述的方法係屬說明性質，而 其他的修改與變異是可能的。步驟的順序可以變化，並且 可以修改或是將之結合。
本發明之以上不同實施例的敘述已經用說明及敘述的 目的而呈；見，並非意圖耗盡本發明之權益或是將本發明限 :於所揭露的特定形式，並騎改與變異在上述教示之下 屬二遗的’或是在實做本發明的時候需要修改與變 敘述的實施例係為了解釋本發明之原則與實作庫 ^使得習知技術者可以利用本發明，而以不同的實施: 式一不同的修改達到適合的特定應用。 【圖式簡單說明】 第1圖係-簡化後的剖面圖’ 件之習知方法；以& 月h牛導體兀 其說明根據本 第2a圖至第2e圖係簡化後之剖面圖 發明之實施例的製造半導體元件之方法。 【主要元件符號說明】 10,110 20,120 30,130 45,145 55,155 半導體基板 元件隔離結構 閘極絕緣膜 閘極電極 閘極硬遮罩層圖樣 9 1309075 60,160 閘極結構 80,180 光阻膜圖樣 85,185 位元線接觸區域 140 閘極導電層 150 閘極硬遮罩層 170 絕緣膜
10

Claims (1)

1309075
十、申請專利範圍·· • 種用以製造丰遵_ S* - ，Λ 千¥體凡件之方法，其包含： 3 成.一閘極結構於一半導濟其如μ 士 構包含„ & t 牛導體基板上方，該閘極結 再匕3閘極電極與閘極 板且右；Α π交卓層之堆疊結構，該半導體基 傲/、有7C件隔離結構； CM形成填滿閑極結構之絕緣臈； 域之二)::::刻絕緣膜之預定區域以將位 干導體基板曝光； (d )將所曝光的半導許其％尬4 程； 千导體基板施加C-HALO離子植入過 (e )移除該絕緣臈； 其中步驟（〇包括： 將絕緣膜平面化直料光閘極硬遮罩層； 定義位I形成光阻膜圖樣於最終結果的整個表面上，以 疋義位7C線接觸區域； 膜，以將付} Μ光^ ^圓樣作為一餘刻遮罩來敍刻絕緣 、凡線接冑區域之半導體基板曝光； (C·4 )移除光阻膜圖樣。 絕緣=ΓΓ利範圍第1項之方法，其中m極硬遮罩層與 編具有不同戧刻選擇性的材料所形成。 3 ’如申5青專利範圍第2 j茛之太、土 . 氮化物ΜΗ * M之方法’其中閘極硬遮罩層以 物膜形成，而絕緣膜以氧化物形成。 氧化物U1專利關第2項之方法，其中間極硬遮罩層以 、 而絕緣臈以氮化物膜形成。 1309075 5.如申請專利範圍第1項之 從約2000A至約5000A的範圍 中、’邑緣膜之厚度為 6‘如申請專利範圍第1項 除過程係利用〇2等離子體方法。，/、中光阻膜圖樣之移 7·如申請專利範圍第1項 程係利用一濕餘刻方法實施 ：：：之餘刻過 硬遮罩層與錢刻方法具有開極 8.如申凊專利範圍第7項之方法，纟中該蝕刻過程係 用即或是 B〇E(Buffered〇xideEtchant)所實施。' 9·如申請專利範圍第1項之方法，其中該絕緣膜之移除 ° ° 係由利用 HF 或是 BOE ( Buffered Oxide Etchant)之、、兹 餘刻方法所實施。 、、、 十一、围式： 如次頁 12
TW095119353A 2006-01-26 2006-06-01 Method for fabricating semiconductor device TWI309075B (en)

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JP5661524B2 (ja) * 2011-03-22 2015-01-28 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法

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JP4602584B2 (ja) * 2001-03-28 2010-12-22 富士通セミコンダクター株式会社 半導体装置及びその製造方法
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JP2005142484A (ja) * 2003-11-10 2005-06-02 Hitachi Ltd 半導体装置および半導体装置の製造方法
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KR100598169B1 (ko) 2004-06-09 2006-07-10 주식회사 하이닉스반도체 반도체 소자의 콘택 형성 방법

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US20070173042A1 (en) 2007-07-26

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