TWI308994B - Basic compound, resist composition and patterning process - Google Patents
Basic compound, resist composition and patterning process Download PDFInfo
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- TWI308994B TWI308994B TW093114306A TW93114306A TWI308994B TW I308994 B TWI308994 B TW I308994B TW 093114306 A TW093114306 A TW 093114306A TW 93114306 A TW93114306 A TW 93114306A TW I308994 B TWI308994 B TW I308994B
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- carbon atoms
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- alkyl group
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- 150000003233 pyrroles Chemical class 0.000 description 1
- ZVJHJDDKYZXRJI-UHFFFAOYSA-N pyrroline Natural products C1CC=NC1 ZVJHJDDKYZXRJI-UHFFFAOYSA-N 0.000 description 1
- 125000002294 quinazolinyl group Chemical class N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229960000948 quinine Drugs 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 102220043349 rs138107830 Human genes 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 150000003510 tertiary aliphatic amines Chemical class 0.000 description 1
- 125000005888 tetrahydroindolyl group Chemical group 0.000 description 1
- 150000007979 thiazole derivatives Chemical class 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 125000005951 trifluoromethanesulfonyloxy group Chemical group 0.000 description 1
- 125000001889 triflyl group Chemical group FC(F)(F)S(*)(=O)=O 0.000 description 1
- RKBCYCFRFCNLTO-UHFFFAOYSA-N triisopropylamine Chemical compound CC(C)N(C(C)C)C(C)C RKBCYCFRFCNLTO-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- 230000002485 urinary effect Effects 0.000 description 1
- 229940011671 vitamin b6 Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D235/00—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings
- C07D235/02—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings condensed with carbocyclic rings or ring systems
- C07D235/04—Benzimidazoles; Hydrogenated benzimidazoles
- C07D235/06—Benzimidazoles; Hydrogenated benzimidazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached in position 2
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Q—ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
- B60Q1/00—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
- B60Q1/26—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
- B60Q1/34—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating change of drive direction
- B60Q1/343—Manually actuated switching arrangements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Q—ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
- B60Q1/00—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
- B60Q1/26—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
- B60Q1/32—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating vehicle sides, e.g. clearance lights
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Q—ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
- B60Q1/00—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
- B60Q1/26—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
- B60Q1/44—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating braking action or preparation for braking, e.g. by detection of the foot approaching the brake pedal
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D235/00—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings
- C07D235/02—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings condensed with carbocyclic rings or ring systems
- C07D235/04—Benzimidazoles; Hydrogenated benzimidazoles
- C07D235/18—Benzimidazoles; Hydrogenated benzimidazoles with aryl radicals directly attached in position 2
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/02—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
- C07D405/06—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
- B60Y2200/00—Type of vehicle
- B60Y2200/10—Road Vehicles
- B60Y2200/11—Passenger cars; Automobiles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S362/00—Illumination
- Y10S362/80—Light emitting diode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials For Photolithography (AREA)
- Plural Heterocyclic Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
1308994 (2) 之基板附近的圖型變粗之所謂拉末端現象之問題。T -頂 點現象認爲係因光阻膜表面的溶解性降低,於基板面之拉 末端則係因基板附近的溶解性降低。又,由曝光至ΡΕΒ爲 止之間進行酸不安定基脫離的暗反應,亦發生線的殘留尺 寸變小之問題。此在供於增強化學性光阻之實用時成爲大 缺點。因爲此缺點,先前的增強化學性正型光阻材料於微 影步驟中的尺寸控制困難,且使用乾式蝕刻之基板加工時 亦具有損害尺寸控制之問題〔參照非專利文獻1、2 : W. Hinsberg,等人,J. of Photopolymer S c i. and Technology V o 1. 6, Number 4, p 5 3 5 -546 ( 1 993 ) ,T. Kumada 等人, J. of Photopolymer Sci. and Technology Vol. 6,Number 4, p 5 7 1 -5 74 ( 1 993 )〕。 於增強化學性正型光阻材料中,PED或基板面之拉末 端問題的原因爲與空氣中或基板表面之鹼性化合物大爲相 關。經由曝光所發生之光阻膜表面之酸爲與空氣中的鹼性 化合物反應、失活,且若至PEB爲止之放置時間變長則僅 於此失活的酸量增加,故難引起酸不安定基的分解。因此 ,於表面形成難溶化層,且圖型變成T -頂點形狀。 此處,已知經由添加鹼性化合物,則可抑制空氣中之 鹼性化合物的影響,故對於P E D亦具有效果(例如,參照 專利文獻3〜22 :特開平5-23 2 706號公報、特開平 5 -2496 8 3號公報、特開平5- 1 5 823 9號公報、特開平 5-249662號公報、特開平5-25 7282號公報、特開平 5 -2 8 93 2 2號公報 '特開平5 -2 8 9 340號公報、特開平 1308994 (5) 特開平5 -2496 83號公報 〔專利文獻5〕 特開平5 - 1 5 8 2 3 9號公報 〔專利文獻6〕 特開平5 -249662號公報 〔專利文獻7〕 特開平5 - 2 5 7 2 8 2號公報 〔專利文獻8〕 特開平5 -2 8 93 22號公報 〔專利文獻9〕 特開平5 - 2 8 9 3 4 0號公報 〔專利文獻1 0〕 特開平6- 1 94 83 4號公報 〔專利文獻1 1〕 特開平6 — 242605號公報 〔專利文獻1 2〕 特開平6-242606號公報 〔專利文獻1 3〕 特開平6-263 7 1 6號公報 〔專利文獻1 4〕 特開平6-263 7 17號公報 〔專利文獻1 5〕 特開平6-2 66 1 00號公報 〔專利文獻1 6〕 -9- 1308994 (7) 〔發明所欲解決之問題〕 本發明爲鑑於上述情事,以提供防止光阻膜減薄之效 果高'解像度與聚焦界限擴大效果高之光阻材料及使用此 材料形成圖型之方法爲其目的。更且,本發明爲以提供此 類光阻材料所合適使用的鹼性化合物爲其目的。 〔解決課題之手段及發明之實施形態〕 本發明者爲了達成上述目的而進行致力檢討,結果發 現下述一般式(1),特別爲式(2)〜(7)所示之具有 酯基、氰基或乙縮醛基等之極性官能基和苯並咪唑骨架之 鹼性化合物可根據後述方法而高效率且簡便地取得,且於 光阻材料中以適切量添加時其對於防止光阻膜減薄之效果 高,且提高解像度和聚焦界限擴大效果高。 因此,本發明爲提供下述光阻材料及圖型形成方法、 以及鹼性化合物。 〔I〕一種光阻材料,其特徵爲含有下述一般式(1) 〜(7 )所示之鹼性化合物之一種或二種以上。 -11 - 1308994 (10) 阻材料於基板上塗之步驟, (2 )其次於加熱處理後,透過光罩以波長3 00 nm 以下之高能量線或電子射線予以曝光之步驟, (3 )加熱處理後,使用顯像液予以顯像之步驟。 〔VI〕一種下述一般式(2 )〜(7 )所示之鹼性化合
環狀之烷基、碳數6〜10個之芳基或碳數7〜10個之芳烷基 。R3、R5、R9、R12、rm爲碳數個之直鏈狀、支鏈 狀或環狀之伸烷基。R4爲氫原子或碳數1〜15個之烷基, 亦可含有一個或數個羥基、羰基、酯基、醚基、硫基 '碳 酸酯基、氰基或乙縮醛基。R6爲碳數1〜15個之烷基 '羥 基、羰基、酯基、醚基、硫基、碳酸酯基、氰基或乙縮醛 基。R7爲碳數2〜10個之直鏈狀、支鏈狀或環狀之三價烴 基。R8分別相同或相異之碳數1〜1〇個的醯基,亦可含有 —個或數個醋基或醚基’或二個R8彼此爲結合形成環狀碳 酸酯或環狀乙縮醯。R1G爲氫原子或碳數1〜10個之直鏈狀 -14- 1308994 '支鏈狀或環狀烷基。Rll爲碳數1〜1〇個之直鏈狀、支鏈 狀或環狀院基,亦可含有—個或數個醚基、硫基或乙縮醛 基。R1G與R11亦可結合形成環。Ri3爲碳數1〜10個之直鏈 狀 '支鏈狀或環狀之烷基,R 1 3彼此亦可結合形成環)。 以下,更詳細說明本發明。 本發明之光阻材料爲含有一種或二種以上具有下述一 般式(1 )所示之苯並咪唑骨架及極性官能基之鹼性化合 物,較佳爲含有一種或二種以上具有下述一般式(2)〜 (7 )所示之苯並咪唑骨架及極性官能基之鹼性化合物。 還有,式(2)〜(7)之化合物爲新穎物質。
(式中,R1爲氫原子、碳數1〜10個之直鏈狀、支鏈狀或 環狀之烷基、碳數6〜10個之芳基或碳數7〜10個之芳烷基 。R2爲碳數1〜20個之直鏈狀 '支鏈狀或環狀之具有極性 官能基的烷基,極性官能基爲含有一個以上酯基、乙縮醛 基或氰基,其他亦可含有一個以上羥基、羰基、醚基、硫 基或碳酸酯基。) -15- 1308994 (13) 〜10個之直鏈狀、支鏈狀或環狀之煩 芳基或碳數7〜10個之芳烷基具體而 、丙基、異丙基、丁基、異丁基 '戊 戊基、環己基、苯基、甲苯基、二甲 苯乙基等。 一般式(1 )中,R2所示之碳數1 鏈狀或環狀之具有極性官能基的烷基 、乙縮醛基或氰基,且其他亦可含有 、醚基、硫基或碳酸酯基做爲極性官 例示2_氧基四氫呋喃—3_基、5—森 、2-氧基四氫—2H-吡喃_3 —基' ,3 -雙(甲氧羰基)丙基及具有後 ' R7 ' R8 ' R9 ' R10 ' R1 1 ^ R12 ^ R13 、-r5-C02-R6、- R7- (OR**) 2 ~ OR1 1 ' - R12 - CH - (OR13) 2、— 定於此。 —般式(2) 、 (3) 、 (5)、 ' R5、R9、R12、R14所示之碳數1〜 狀或環狀之伸烷基具體而言可例示亞 基、伸丙基、亞丙基、異亞丙基、1 丁 二基、1,2 — 丁 二基、1,5-戊二 h 10 —癸二基、1,2 —環戊二基、1 4 —環己二基,但並非限定於此。
一般式(2 ) 、 ( 3 )中,R4、R i基、碳數6〜10個之 言可列舉甲基、乙基 基、己基、癸基、環 苯基、萘基、苄基、 〜20個之直鏈狀、支 爲含有一個以上醋基 一個以上羥基、羰基 能基,具體而言,可 $基四氬D夫喃一 3 —基 3,3 -二氰丙基、3 述之 R3、R4、R、R6 、R14之 R3 - 0C0 - R4 、-R9 - OCH ( R10 ) R14 — CN,但並非限 (6 )、( 7 )中,R3 10個之直鏈狀、支鏈 甲基、伸乙基、亞乙 ,3 —丙一基、1,4 — 基、1,2 —戊二基、 ,2 —環己二基、1 ’ 6所示之碳數1〜15個 -17- 1308994 (15) ~~ 1,3,5 —三基,但並非限定於此。 —般式(4 )中’ R8爲分別相同或相異之碳數1〜1 〇個 的酿基,亦可含有一個或數個酯基或醚基,或二個R8彼此 爲結合形成環狀碳酸酯或環狀乙縮醛,R8爲醯基時,具體 而Μ可例示甲醯基、乙醯基、丙醯基、丁醯基 '異丁醯基 、戊醯基、己醯基、辛醯基、癸醯基、特戊醯基' 乙羰基 、甲氧乙醯基、(2—甲氧乙氧基)乙醯基、〔2_(2一 甲氧乙氧基)乙氧基〕乙醯基、乙醯氧乙醯基、2_四氫 咲喃羰基、甲氧羰基、第三丁氧羰基,且二個R8彼此爲結 合形成環狀碳酸酯或環狀乙縮醛時,R8爲羰基或亞烷基, 亞烷基具體而言可例示亞甲基、亞乙基、亞丙基、異亞丙 基’但並非限定於此。 —般式(5)中,R1Q所示之碳數1〜1〇個之直鏈狀、 支鏈狀或環狀烷基具體可例示甲基、乙基、丙基、異丙基 、環己基、癸基,R11所示之碳數1〜10個之直鏈狀、分枝 狀或環狀烷基亦可含有一個或多數個醚基、硫基或乙縮醛 基’具體而言可例示甲基、乙基、丙基、異丙基、丁基、 異丁基、戊基、己基、癸基、環戊基、環己基、甲氧甲基 ' 2 —甲氧乙基、甲硫甲基,Rig與rH結合形成環時,所 形成之環具體可例示四氫呋喃、四氫一 2H—吡喃,但並 非限定於此。 —般式(6)中,R13所示之碳數1〜10個之直鏈狀、 支鏈狀或環狀烷基具體可例示甲基、乙基、丙基、異丙基 '丁基 '異丁基、戊基、己基、癸基,R13彼此結合形成 -19- 1308994 (16) 環時所形成之環具體可例示1,3 -二鸣茂烷、1,3 -二哼 烷,但並非限定於此。 以下具體例示本發明之具有苯並咪唑骨架及極性官能 基的鹼性化合物,但並非限定於此。下述式中,Me爲表 示甲基、Et爲基、t—Bu爲第三丁基、Ac爲乙醯基' Ph爲 苯基(以下相同)。
-20- (17) 1308994
Ph Ν^Ν-^/°γΗ n^n-^OAc Ο 胺2 入〜^Ac 入〜0Ac 胺3 胺4 Ο 胺5 ,〇Ac
Ph 人 胺7
Ph OAc
OAc
O Ac N ,^\/OAc
Ph Ν^Ν/^〇γΙ o 胺9 胺10 胺11 胺12 OAc ,八 d °1 胺14
,<^\v OMe d V 1 ^ V 胺15 胺16 胺13 N^N^J OAc ^ V V 0 N^N ό 胺17 胺18 胺19 5 V OMe Ί O^OMe ϊ Ν公Ν 5 胺21 胺22 胺23 Ύ 〇
0-^\ ο 胺20 OUBu
Ph N"i^'N'^'C02Me 胺24 -21 - 1308994 (18)
Ph N^N^CO^Et Ph νΛ, Ph νΛ〇 y_/ \ >=< COjMe ^__IJ C02Me 胺25 胺26 胺27 胺28
胺29 胺30 胺31 胺32
Ph N么N n^n-^i 〇-^〇Me 胺33 5 ί> 胺34
Ph N^N-^ O^OUe 胺35 ^ 〇0〇Me 胺36
胺37 胺38 胺39 胺40 M °-CN h\ S—^ C02Me 胺41 胺42
胺44
-22- 1308994 (19)
胺49 胺50 胺51
胺53
OAc
胺57 胺58 胺59
Ph
胺61 胺62 胺63 Ph Ph
胺65 胺66 胺67
胺69
胺70 CO,Me
胺71 -23- 1308994 (23) 一乙氧乙基、乙氧丙基、1 一乙氧丁基、1_丙氧乙基 、1 一丙氧丙基、1 一丙氧丁基' 1一環戊氧乙基、1 一環己 氧乙基、2 —甲氧異丙基、2_乙氧異丙基、1—苯氧乙基 、1—苄氧乙基、1 一苯氧丙基、1—苄氧丙基、1—金剛烷 氧乙基、1—金剛烷氧丙基、2_四氫呋喃基、2 —四氫— 2H —吡喃基、1— (2—環己烷羰氧乙氧基)乙基、丨―( 2 —環己烷羰氧乙氧基)丙基、1—〔2— (1 -金剛烷羰氧 基)乙氧基〕乙基、1— 〔2— (1 —金剛院幾氧基)乙氧 基〕丙基,但並非限定於此。 上述式(C2)所示之三級烷基具體而言可例示第三丁 基、第三戊基、1—乙基—1_甲基两基、1,1 一二乙基丙 基、1,1,2_三甲基丙基、1 一金剛烷基—1_甲基乙基 、1 一甲基一1_ (2 —原冰片基)乙基、1—甲基—1—( 四氫咲喃—2—基)乙基' 1—甲基一 1_ (7 —鳴那硼院— 2-基)乙基、1_甲基環戊基、1_乙基環戊基、1 一丙基 環戊基' 1—環戊基環戊基、1 一環己基環戊基、1一(2 — 四氫呋喃基)環戊基、1— (7_哼那硼烷_2_基)環戊 基、1—甲基環己基、1—乙基環己基' 1-環戊基己基、1 _乙基環己基、1_環戊基環己基、1_環己基己基、2-甲基一 2—原冰片基、2 -乙基—2 -原冰片基、8 -甲基一 8 —三環 〔5.2.1.02·6〕癸基、8 -乙基—8 —三環 〔 5.2.1.02’6〕癸基、3 -甲基一3 -四環〔4.4.0·12’5,I7’10〕 十二烷基' 3 —乙基—3 —四環〔4.4.0.12·5,17’1Q〕十二烷 基、2—甲基一 2—金剛烷基、2 —乙基—2 -金剛烷基、1 -27- 1308994 (24) 一甲基一3—氧基—丨―環己基、丨―甲基—丨_ (四 _2_基)乙基、5_羥基一 2一甲基一 2一金剛烷g 羥基—2 —乙基〜2 _金剛烷基,但並非限定於此。 又’基質樹脂之羥基的氫原子1莫耳%爲經由 般式(C3a )或(cm )所示之酸不安定基而被分 分子內交聯亦可。 (C3a) (C3b) 上述式中,R7、R8爲表示氫原子或碳數1〜8個 狀、分支鏈狀或環狀烷基。R7與R8亦可結合形成環 形成環時R7、R8爲表示碳數1〜8個直鏈狀或分支鏈 基。R9爲碳數1〜1〇個之直鏈狀、分支鏈狀或環狀 ,15爲0或1〜10之整數。A爲表示a+l價之碳數1〜 脂族或脂環式飽和烴基、芳香族烴基或雜環基’此 可中介存在雜原子’或結合至此碳原子之一部分氫 經由經基、殘基、羯基或氟原子所取代。B爲表不 _ CO - 〇 -、一 NHCO - 〇-或 NHCONH —。a爲 1, 數。 上述一般式(Ca3) 、 (C3b)所示之交聯型 具體可列舉下述式(C3) 一1〜(C3) 一8’但並 於此。 氫呋喃 I ' 5 - 下述一 子間或
之直鏈 ,且於 狀伸烷 伸烷基 50個的 些基亦 原子爲 < 7之整 乙縮醛 非限定 -28- (25) 1308994 ch3 ch3 (C3>1 -CH—〇-CH2CH2-〇-CH- CH, CH, —CH一O—〈 ^~0 - CH— 产3 CH3 _CH—〇-CH2CH2CH2CH2-〇 - CH— 〒H3 ch3 -ch—o-ch2ch2och2ch2och2ch2-o-ch- (C3)-2 (C3)-3 (C3>4 〒h3 ch3 (C3)-5 -CH—〇-CH2CH2Ck^^〇CH2CH2 - O-CH- ch3 -ch—o-ch2ch2o' ch3 ,OCH2CH2—O-CH- (C3)-6
ch3 I ch3 -CH—〇-CH2CH2〇v^^OCH2CH2-〇-cH- (C3)-7 V p OCH2CH2-〇-CH—— ch3 -CH—〇-CH2CH2〇-^^-
CH CH,
CH
〇CH2CH 疒 O-CH- (C3)-8 基質聚合物之重量平均分子量以2,000〜100,000爲佳 ,若未滿2,000則成膜性、解像度差,若超過1 00,000則解 像度差,或者於形成圖型時發生異物。 (D )成分之產酸劑爲於本發明之光阻材料中,含有 感應高能量線或電子射線而發生酸的化合物。 本發明所使用之產酸劑可列舉 -29- 1308994 (26) I 下述一般式(Pla-1) 、 (Pla-2)或(Plb) 之氧鎗鹽、 ii 下述一般式(P2 )之重氮甲烷衍生物、 iii 下述一般式(P3 )之乙二脤衍生物、 iv 下述一般式(P4 )之雙硯衍生物、 v i 下述一般式(P 5 )之N -羥基亞胺化合物的磺酸 酯、
vi /3 -酮基磺酸衍生物、 vii 雙碾衍生物、 viii磺酸硝苄酯衍生物、 ix 磺酸酯衍生物、 X 肟磺酸酯
R101a- —S1—R 101c 疒 Rl〇]c Κ· κ· (Fla-1) (Pla-2) ( 式 中 R1 0 1 a - R10】b、 Ri 0 1 ( :分別 表示碳數1 〜1 2 個之 直 鏈 狀 支 鏈 狀 或 環 狀之烷 基 、 烯基 、氧烷基、 碳數6〜 20 個 之 芳 基 或 碳 數 7 - - 12個之芳院基或 芳氧烷基 ,此 些基 之 — 部 分 或 全 部 氫 原 子亦可 經 烷 氧基 等所取代 。又 ,R1 0 ] b 與 R1 0 1 ( :亦 可 形 成 環 ,且於 形 成 環時 ,R10,b 、 R,01c 分別 表 示 碳 數 1〜 ^ 6 個 之 伸: 院基。K _ 爲 表示非球核性對 向離 :子。 ) 上 述 R1 0 1 ί \ RlOlb、 R ]0 1 e分別 可爲相同 或相 異 , 具 體 -30- 1308994 (27) 而言烷基可列舉甲基、乙基、丙基、異丙基、正丁基、第 二丁基、第三丁基、戊基、己基、庚基、辛基、環戊基、 環己基、環庚基、環丙基甲基、4 一甲基環己基、環己基 甲基、原冰片基、金剛烷基等。烯基可列舉乙烯基、烯丙 基、丙烯基'丁烯基、己烯基、環己烯基等。氧烷基可列 舉2-乙氧基環戊基、2_氧基環己基等,且可列舉2 —氧 丙基、2 —環戊基一2 —氧乙基' 2 -環己基—2—氧乙基、 2— (4 一甲基環己基)—2 —氧乙基等。芳基可列舉苯基 、萘基等’和對-甲氧苯基、間—甲氧苯基、鄰一甲氧苯 基、乙氧苯基、對-第三丁氧苯基、間-第三丁氧苯基等 之院氧苯基、2 -甲基苯基、3 —甲基苯基、4 —甲基苯基 、乙基苯基、4 一第三丁基苯基、4_ 丁基苯基、二甲基苯 基等之烷苯基、甲萘基、乙萘基等之烷萘基 '甲氧萘基、 乙氧萘基等之烷氧萘基、二甲萘基、二乙萘基等之二烷萘 基、二甲氧萘基 '二乙氧萘基等之二烷氧萘基等。芳烷基 可列舉苄基、苯乙基、乙氧苯基等。芳氧烷基可列舉2_ 苯基-2—氧乙基、2— (1—萘基)—1_氧乙基、2— (2 蔡基)一 氧乙基寺之2 —方基一2 —氧乙基等。K -之 非球核性對向離子可列舉氯化物離子、溴化物離子等之鹵 素離子、三氟磺酸酯、1’ 1,1一三氟乙烷磺酸酯、九氟 丁 酸醋寺之氟院基磺酸醋、甲苯擴酸醋、擴酸苯醋、 4_氟磺酸苯酯、1,2,3,4,5 —五氟磺酸苯酯等之磺酸 芳酯、甲磺酸酯、磺酸丁烷酯等之磺酸烷酯。 1308994 (28) R102a j^l02b
R 104a S1--Rl〇3 K· __Rl04b K* (Pib) (式中,R1G2a、RIQ2b爲分別表示碳數丨〜8個之直鏈狀、 支鏈狀或環狀之烷基。Rl〇3爲表示碳數丨〜1〇個之直鏈狀 、支鏈狀或環狀之烷基。RlCUa、R1(ub爲表示碳數3〜7個 之2氧院基。κ爲表不非球核性對向離子)。 上述R1Q2a、R1Q2b具體而言可列舉甲基、乙基、丙基 、異丙基、正丁基、第―丁基、第三丁基、戊基、己基、 庚基、辛基、環戊基、環己基、環丙基甲基、4 一甲基環 己基、環己基甲基等。RlG3可列舉亞甲基、伸乙基、伸丙 基、伸丁基、伸戊基、伸己基、伸庚基、伸辛基、伸壬基 、1,4 —環伸己基、1,環伸已基、1, 環伸戊基、 1,4 —環伸辛基、1,環己烷二亞甲基等。R1()4a、 R1Q4b可列舉2 —氧丙基' 2 —氧基環戊基、2 一氧基環己基 、2-氧基環庚基等。K —可列舉與式(pia—l)及(Pla —2 )所說明者相同者。 ]〇5 f R105-S02--c——so,—R106 (P2) (式中,R105、R1Q6爲表示碳數1〜12個之直鏈狀、支鏈狀 或環狀之烷基或鹵化烷基、碳數6〜20個之芳基或鹵化芳 基或碳數7〜12個之芳烷基)。 RIQ5、R1C)6之烷基可列舉甲基、乙基、丙基、異丙基 -32- 1308994 (30) Ο Ο
R 】0】3 -S——CH2—s-II IIο ο
-R 】0】b (Ρ4) (式中,R1Clla、
A R110 N——O——S02
R 111 cIIo (P5) (式中,R11G爲表示碳數6〜10個之伸烷基、碳數1〜6個 之伸烷基或碳數2〜6個之伸烯基,此些基之一部分或全部 氫原子亦可再經碳數1〜4個之直鏈狀或分枝狀之烷基或烷 氧基、硝基乙醯基或苯基。R111爲表示碳數1〜8個之直鏈 狀 '分枝狀或經取代之烷基、烯基或烷氧烷基、苯基或萘 基’此些基之一部分或全部氫原子可再經碳數1〜4個之烷 基或烷氧基’亦可經碳數丨〜4個烷基、烷氧基、硝基或乙 酿基所取代之苯基、碳數3〜5個之雜芳香族基或氯原子、 氟原子所取代。 此處,R11()之伸芳基列舉1,2_伸苯基、1,8 —伸萘 基、伸焼基可列舉亞甲基' 伸乙基、伸丙基、伸丁基、苯 基伸乙基、原冰片烷_ 2,3 一二基等,伸烯基可列舉1,2 一伸乙烯基、1—苯基_1,2一伸乙烯基、5 一原冰片烯〜 2,3 —二基等。Rm之烷基爲與Rl〇la〜RlCu相同,烯基可 列舉乙烯基、:1一丙烯基、烯丙基、;!_ 丁烯基' 3 — 丁烯 -34- 1308994 (33) 雙一〇— (對一甲苯磺醯基)—α —二甲基乙二肟、 雙一0— (對一甲苯磺醯基)—α —二苯基乙二肟、雙— 〇_ (對一甲苯磺醯基)一α-二環己基乙二肟、雙_0 一(對一甲苯磺醯基)一2,3—戊二酮乙二肟、雙一0 — (對一甲苯磺醯基)一 2_甲基一 3,4 —戊二酮乙二肟、 雙一0—(正丁烷磺醯基)_α —二甲基乙二肟、雙一 〇 _ (正丁烷磺醯基)_α -二苯基乙二肟、雙一 0_ (正 丁烷磺醯基)—α -二環己基乙二肟、雙_0— (正丁烷 磺醯基)一2,3-戊二酮乙二肟、雙—Ο- (正丁烷磺醯 基)—2 —甲基一3,4 —戊二酮乙二肟、雙—Ο — (正丁 烷磺醯基)—二甲基乙二肟、雙— 〇_(三氟甲烷磺 醯基)一二甲基乙二肟、雙_0 — (1,1,1-三氟 乙烷磺醯基)—二甲基乙二肟、雙一 0-(第三丁烷 磺醯基)一 α —二甲基乙二肟、雙_0—(全氟辛烷磺醯 基)一二甲基乙二肟、雙_0_ (環己烷磺醯基)_ α —二甲基乙二肟、雙一 〇_(苯磺醯基)—二甲基 乙二肟、雙一◦—(對—氟苯磺醯基)一二甲基乙二 肟、雙_〇— (對一第三丁苯磺醯基)一α -二甲基乙二 汚、雙一〇— (二甲苯磺醯基)_α —二甲基乙二肟、雙 一 0 —(樟腦磺醯基)-α —二甲基乙二肟等之乙二肟衍 生物。 雙萘磺醯甲烷、雙(三氟甲基)磺醯甲烷、雙甲磺醯 甲烷、雙乙磺醯甲烷、雙丙磺醯甲烷、雙異丙磺醯甲烷、 對-對-甲苯磺醯甲烷、雙苯磺醯甲烷等之雙碩衍生物。 -37- 1308994 (34) 2—環己羰基—2- (對_甲苯磺醯基)丙烷、2-異 丙羰基一 2— (對-甲苯磺醯)丙烷等之0 -酮基硯衍生 物。 對一甲苯磺酸2,6 —二硝苄酯' 對一甲苯磺酸2,4 — 二硝苄酯等之磺酸硝苄酯衍生物。 1,2,3 —三(甲烷磺醯氧基)苯、1,2,3_三(三 氟甲烷磺醯氧基)苯、1,2’ 3-三(對一甲烷磺醯氧基 )苯等之磺酸酯衍生物。 N-羥基琥珀醯亞胺磺酸酯、N-羥基琥珀醯亞胺三 氟甲烷磺酸酯、N -羥基琥珀醯亞胺乙烷磺酸酯、N -羥 基琥珀醯亞胺1-丙烷磺酸酯、N—羥基琥珀醯亞胺2-丙 烷磺酸酯、N-羥基琥珀醯亞胺1 -戊烷磺酸酯、N_羥基 琥珀醯亞胺1 -辛烷磺酸酯、N -羥基琥珀醯亞胺對-甲 苯磺酸酯、N -羥基琥珀醯亞胺對-甲氧基苯磺酸酯、N -羥基琥珀醯亞胺2 -氯乙烷磺酸酯、N-羥基琥珀醯亞 胺苯磺酸酯、N-羥基琥珀醯亞胺2- 4,6—三甲基苯磺 酸酯、N-羥基琥珀醯亞胺1 -萘磺酸酯、N -羥基琥珀醯 亞胺2 —萘磺酸酯、N -羥基- 2_苯基琥珀醯亞胺甲烷磺 酸酯、N -羥基馬來醯亞胺甲烷磺酸酯、N -羥基馬來醯 亞胺乙烷磺酸酯、N —羥基- 2 -苯基馬來醯亞胺甲烷磺 酸酯、N—羥基戊二醯亞胺甲烷磺酸酯' N—羥基戊二醯 亞胺苯磺酸酯、N -羥基酞醯亞胺甲烷磺酸酯、N-羥基 酞醯亞胺苯磺酸酯、N—羥基酞醯亞胺三氟甲烷磺酸酯、 N -羥基酞醯亞胺對一甲苯磺酸酯、N —羥基萘醯亞胺甲 -38- 1308994 (35) 烷磺酸酯、N—羥基苯醯亞胺苯磺酸酯、N —羥基_5 —原 冰片烯一 2’ 3 —二羧醯亞胺甲烷磺酸酯、N-羥基—5 — 原冰片烯一2,3-二羧醯亞胺三氟甲烷磺酸酯、N-羥基 一 5-原冰片烯一 2,3_二羧醯亞胺一對一甲烷磺酸酯等 之N -羥基醯亞胺化合物的磺酸酯衍生物等,但以三氟甲 烷磺酸三苯銃、三氟甲烷磺酸(對-第三丁氧苯基)二苯 銃、三氟甲烷磺酸三(對-第三丁氧苯基)銃、對-甲苯 磺酸三苯锍、對-甲苯磺酸(對-第三丁氧苯基)二苯锍 、對-甲苯磺酸三(對-第三丁氧苯基)銃、三氟甲烷磺 酸三萘銃、三氟甲烷磺酸環己基甲基(2-氧基環己基) 锍、三氟甲烷磺酸(2-原冰片基)甲基(2-氧基環己基 )鏑、1,-萘羰甲基四氫苯锍三氟磺酸酯等之氧鎗鹽 、雙(苯磺醯基)重氮甲烷、雙(對-甲苯磺醯基)重氮 甲烷、雙(環己基磺醯基)重氮甲烷、雙(正一丁磺醯基 )重氮甲烷 '雙(異丁磺醯基)重氮甲烷、雙(第二丁磺 醯基)重氮甲烷、雙(正丙磺醯基)重氮甲烷、雙(異丙 磺醯基)重氮甲烷、雙(第三丁磺醯基)重氮甲烷等之重 氮甲烷衍生物,雙一 〇— (對一甲苯磺醯)—α —二甲乙 基二肟、雙一 0_(正丁烷磺醯基)一 α —二甲乙基二肟 等之乙肟衍生物、雙萘磺醯甲烷等之雙碩衍生物、Ν _羥 基琥珀醯亞胺甲烷磺酸酯、Ν—羥基琥珀醯亞胺三氟甲烷 磺酸酯、Ν _羥基琥珀醯亞胺1 -丙烷磺酸酯、Ν -羥基琥 珀醯亞胺2 -丙烷磺酸酯、Ν -羥基琥珀醯亞胺1 -戊烷磺 酸酯、Ν -羥基琥珀醯亞胺對-甲苯烷磺酸酯、Ν -羥基 -39- 1308994 (36) 萘醯亞胺甲烷磺酸酯、N-羥基萘醯亞胺苯磺酸酯等 一羥基醯亞胺化合物的磺酸酯衍生物爲較佳使用。 又,肟磺酸酯可列舉美國專利第6 0 0 4 7 2 4號說明書記 載肟磺酸酯,特別爲(5 -( 4 一甲苯磺醯基)氧亞胺基一 5H-噻吩一2_亞基)苯基乙腈、(5— (1〇-樟腦磺醯 基)氧亞胺基)一 5H —噻吩—2—亞基)苯基乙腈、(5 一正辛烷磺醯氧亞胺基一 5H_噻吩一 2-亞基)苯基乙睛 、(5— (4_甲苯磺醯基)氧亞胺基一 5H—噻吩一 2-亞 基)(2 -甲基苯基)乙腈、(5 —(10—樟腦磺醯基)氧 亞胺基—5H_噻吩_2 —亞基)(2—甲基苯基)乙腈、 (5 -正辛烷磺醯氧亞胺基一 5H —噻吩—2-亞基)(2 -甲基苯基)乙腈等。 又,美國專利第626 1 73 8號說明書、特開2000-3 1 495 6 號記載之肟磺酸酯,特別爲2,2,2 —三氟一 1_苯基一乙 酮肟—〇_甲基磺酸酯、2,2,2—三氟一 1 一苯基一乙酮 .肟_0— (10 —樟腦基磺酸酯)、2,2,2-三氟一 1—苯 基一乙酮肟一〇— (4_甲氧苯基磺酸酯)、2,2,2_三 氟一1—苯基一乙酮肟—0 - (1—萘基磺酸酯)、2’2’ 2 —三氟一1—苯基—乙酮肟_〇_ (2 —萘基磺酸酯)、2 ,2,2_三氟一1—苯基—乙酮肟一0— (2,4,6—三甲 基苯基磺酸酯)、2,2,2_三氟一1— (4 一甲基苯基) —乙酮肟一 〇_ (1〇_樟腦基磺酸酯)、2’ 2’ 2 —三氟 —(4 —甲基苯基)一乙酮肟_0 — (甲基磺酸酯)' 2,2,2_三氟—1—(2—甲基苯基)一乙酮肟一〇一( -40- 1308994 (37) 10 -樟腦基磺酸酯)、2,2,2 -三氟—1— (2,4 一二甲 基苯基)_乙酮肟一 0_ (10-樟腦基磺酸酯)、2,2, 2 —三氟—1— (2,4_二甲基苯基)—乙酮肟- Ο— (1 —萘基磺酸酯)、2,2’ 2 —三氟一1— (2,4 —二甲基苯 基)一乙酮肟_〇— (2—萘基磺酸酯)'2,2,2 —三氟 一 1— (2,4,6 —三甲基苯基)—乙酮肟—0— (10 —樟 腦基磺酸酯)、2,2,2 —三氟—1— (2,4’ 6 —甲基苯 基)一乙酮肟一 〇— (2_萘基磺酸酯)、2,2,2 -三氟 一 1— (4 一甲氧苯基)一乙酮肟一0 —甲基磺酸酯、2,2 ,2 —三氟—1一 (4_甲硫苯基)_乙酮肟—0 —甲基磺 酸酯、2,2,2—三氟—1— (3,4_二甲氧苯基)—乙酮 肟_〇_甲基磺酸酯、2’ 2,3,3,4,4,4 —七氟一1 — 苯基—丁酮肟_〇_(1〇 -樟腦基磺酸酯)、2,2,2_ 三氟一1_(苯基)_乙酮肟_0_甲基磺酸酯、2,2,2 —二氣_1—(苯基)一乙嗣脂_〇— 10—棒腦基擴酸醋 、2,2,2 —二氟一1—(苯基)一乙酮@弓一0— (4_甲 氧苯基)磺酸酯、2,2,2—三氟_1 一 (苯基)一乙酮肟 _〇_(1一萘基)磺酸酯、2,2,2—三氟一1_(苯基 )—乙酮肟—〇— (2_萘基)磺酸酯、2,2,2-三氟_ 1—(苯基)一乙酮肟_0— (2,4,6 —三甲基苯基)磺 酸酯、2,2,2—三氟_1_ (4 —甲氧苯基)—乙酮肟— 0— (10 —樟腦基)磺酸酯、2,2,2 —三氟一1— (4 — 甲氧苯基)一乙酮肟一 〇_甲基磺酸酯' 2,2,2_三氟 —1 一 (2_甲氧苯基)_乙酮肟_0— (10 —樟腦基)磺 -41 - 1308994 (38) 酸酯、2,2,2—三氟_1_ (2,4 —二甲氧苯基)_乙酮 肟_0—(1一萘基)磺酸酯、2,2,2—三氟_1—(2, 4 一二甲氧苯基)一乙酮肟_0_ (2 —萘基)磺酸酯、2 ,2,2—三氟—1一 (2,4,6—三甲氧苯基)—乙酮肟— 0- (10-樟腦基)磺酸酯、2,2,2 -三氟—1— (2,4 ,6—二甲氧苯基)—乙酮汚―0— (1 一萘基)擴酸酯、 2,2,2 —三氟—1— (2,4,6_三甲氧苯基)—乙酮月亏 一 0— (2 —蔡基)磺酸酯、2,2,2—三氟—1— (4_甲 氧苯基)一乙酮肟一 〇—甲基磺酸酯、2’ 2,2—三氟一 1 一 (4 一硫甲苯基)_乙酮肟一0_甲基磺酸酯、2,2,2 —三氣_1 一 (3,4 —二甲氧苯基)—乙嗣@弓—0_甲基 磺酸酯、2,2,2_三氟_1_ (4_甲氧苯基)一乙酮肟 一 〇_ (4—甲基苯基)磺酸酯、2,2,2—三氟—1一 (4 —甲氧苯基)_乙酮肟一 〇_ (4_甲氧苯基)磺酸酯、2 ,2,2 —三氟—1一 (4 —甲氧苯基)一乙酮月亏一 0— (4 一十二烷苯基)磺酸酯、2,2,2—三氟一 1_ (_甲氧苯 基)_乙酮肟_〇-辛基磺酸酯、2,2,2—三氟一1一( 4一硫甲苯基)一乙酮肟_0— (4 —甲氧苯基)磺酸酯、 2,2,2 —三氟一 1— (4 —硫甲苯基)一乙酮肟—0— (4 _十二烷苯基)磺酸酯、2,2,2-三氟一 1— (4_硫甲 苯基)—乙酮肟一〇 —辛基磺酸酯'2’ 2 ’2-三氟—1 — (4 一硫甲苯基)一乙酮肟_0_ (2_萘基)磺酸酯、2 ,2,2 —三氟一1一 (2_甲基苯基)一乙酮肟一0_甲基 磺酸酯、2,2,2—三氟_1一 (4_甲苯基)一乙酮肟一 -42- 1308994 (39) Ο -苯基磺酸酯、2,2,2_三氟一 1一 (4_氯苯基)_ 乙酮肟_〇—苯基磺酸酯、2’ 2,3’ 3’ 4’ 4’ 4_七氟 —1 一 (苯基)_ 丁酮肟—0_ (10 —樟腦基)磺酸酯、2 ,2,2—二氣一 1 一萘基—乙嗣目弓一 0_甲基擴酸醋、2’ 2,2 —三氟一 2-萘基乙酮肟—0 —甲基磺酸酯、2,2,2 —三氟一 1 一 〔4一苄氧苯基〕一乙酮肟一 Ο—甲基磺酸酯 ' 2,2,2 —二氛—1—〔4(苯基—1,4 — 一 口咢丁 一1_ 基 )苯基〕一乙酮肟一 0-甲基磺酸酯' 2,2,2—三氟—1 —萘基一乙酮肟—〇 —丙基磺酸酯、2’ 2’ 2-三氟—2 — 萘基一乙酮肟_〇—丙基磺酸酯、2,2,2 —三氟一 1一 〔 4_苄基苯基〕一乙酮肟一 0_丙基磺酸酯、2,2,2_三 氟_:!_ 〔4 一甲磺醯苯基〕-乙酮肟一Ο —丙基磺酸酯、 1,3 —雙〔1一 (4_苯氧苯基)一2,2,2_三氟乙酮肟 _〇_磺酸基〕苯基、2,2,2_三氟一1一 〔4 -甲磺醯 氧苯基〕一乙酮肟_〇_丙基磺酸酯、2,2,2 —三氟—1 _ 〔4 —甲羰氧苯基〕_乙酮肟_0-丙基磺酸酯、2,2 ,2 —二氣 一 1 一 〔6H,7H— 5,8 — _吗桌一 2 —基〕_乙 酮肟一 〇—丙基磺酸酯、2,2,2—三氟一 1— 〔4 —甲氧 羰甲氧苯基〕一乙酮肟一 〇 —丙基磺酸酯、2’ 2’ 2_三 氟一 1_ 〔4一 (甲氧羰基)一 (4_胺基一 1_哼戊一1一 基)苯基〕一乙酮肟_0-丙基磺酸酯、2,2,2 -三氟 —1— 〔3,5_二甲基一 4 一乙氧苯基〕一乙酮肟一 0_丙 基磺酸酯、2,2,2_三氟—1— 〔4 —苄氧苯基〕一乙酮 肟一 0 —丙基磺酸酯、2,2,2_三氟一1— 〔2_硫苯基 -43- 1308994 (40) 〕一乙酮肟一0—丙基磺酸酯'及2,2,2—三氟一1一〔 1_二卩f噻吩一 2 —基)〕一乙酮肟一 〇 —丙基磺酸酯。 更且’可列舉特開平9_954479號公報、特開平9-23 05 8 8號公報或文中以先前技術型式記載的肟磺酸酯α -(對一甲苯磺醯氧亞胺基)一苯基乙腈、(對一氯基 磺醯氧亞胺基)—苯基乙腈、α - (4_硝基苯磺醯氧亞 胺基)一苯基乙腈' α — (4 —硝基一2 —三氟甲基磺醯氧 亞胺基)一苯基乙腈、α - (苯磺醯氧亞胺基)一 4—氯 苯基乙腈、α—(苯磺醯氧亞胺基)一 2,4一二氯苯基乙 腈、(苯磺醯氧亞胺基)_2,6 —二氯苯基乙腈、α _ (苯磺醯氧亞胺基)一2,6 —二氯苯基乙腈、(苯 磺醯氧亞胺基)_4_甲氧苯基乙腈、α — (2 —氯磺醯氧 亞胺基)_4 一甲氧苯基乙腈、ct 一 (苯磺醯氧亞胺基) 一 2 -噻吩基乙腈、(4-十二烷基苯磺醯氧亞胺基) —苯基乙腈、α — 〔 (4_甲擴酿氧亞胺基)—4 —甲氧苯 基〕乙腈、α —〔(十二烷基苯磺醯氧亞胺基)一4一甲 氧苯基〕乙腈、α - (甲苯磺醯氧亞胺基)一 3-噻吩基 乙腈、α (甲磺醯氧亞胺基)〜1_環戊烯基乙腈、α — (乙擴醯氧亞胺基)—1 一環戊燒基乙腈、α —(異丙基 磺醯氧亞胺基)一 1一環戊烯基乙腈、(正—丁磺醯 氧亞胺基)-1一環戊烯基乙腈、ct —(乙磺醯氧亞胺基 )_1一環己烯基乙腈、α -(異丙磺醯氧亞胺基)_ι_ 環己烯苯基乙腈、(正丁基磺醯氧亞胺基)—1 —環 己烯基乙腈等。 -44 - 1308994 (41) 又,可列舉特開平9-208554號公報記載之雙肟磺酸酯 化合物,特別爲(α — (4-甲苯磺酿氧基)亞胺基一對 一伸苯基二乙腈、雙(α —(苯磺醯氧基)亞胺基—對一 伸苯基二乙腈、雙((2 -(甲院擴酿氧基)亞胺基一對一 伸苯基二乙腈、雙(—(丁院磺酿氧基)亞胺基一對一 伸苯基二乙腈、雙(α —(10 —樟腦磺醯氧基)亞胺基一 對一伸苯基二乙睛、雙(α — (4_甲苯磺醯氧基)亞胺 基一對一伸苯基二乙腈、雙(α -(三氟甲烷磺醯氧基) 亞胺基一對一伸苯基二乙腈、雙(α — (4一甲氧苯磺醯 氧基)亞胺基)一對—伸苯基二乙腈、雙(4_甲 苯磺醯氧基)亞胺基一間—伸苯基二乙腈、雙(苯 磺醯氧基)亞胺基一間一伸苯基二乙腈'雙(α一(甲烷 磺醯氧基)亞胺基—間—伸苯基二乙腈、雙(α -(丁烷 磺醯氧基)亞胺基—間—伸苯基二乙腈、雙(α -(丁烷 磺醯氧基)亞胺基-間-伸苯基二乙腈、雙(10 -樟腦磺 醯氧基)亞胺基_間—伸苯基二乙腈、雙(α — (4—甲 苯磺醯氧基)亞胺基一間一伸苯基二乙腈、雙(α—(三 氟甲烷磺醯氧基)亞胺基一間一伸苯基二乙腈、雙(α — (4 一甲氧苯磺醯氧基)亞胺基一間一伸苯基二乙腈等。 還有,上述產酸劑可單獨一種或組合使用二種以上。 氧鎗鹽爲提高矩形性之效果優良’且重氮甲烷衍生物及乙 肟衍生物爲降低駐波之效果優良’經由組合兩者則可進行 側面像的微細調整。 產酸劑之添加量爲相對於基質樹脂1 00份較佳以G_ 1〜 -45- (42) 1308994 50份,更佳爲0.5〜40份。若少於〇·1份則曝光時之產酸量 少,且靈敏度及解像力差’若超過5 0份則光阻的穿透率降 低,且解像力差。 其次,做爲(Ε )成分的阻溶劑爲配合重量平均分子 量爲100〜1,000,較佳爲150〜800,且分子內具有二個以 上性羥基之化合物之該酚性羥基的氫原子,經由酸不安定 基以全體平均〇〜1 00莫耳%比例所取代之化合物,或於分 子內令具有羧基之化合物之該羧基的氫原子,經由酸不安 定基以全體平均5〇〜100莫耳%之比例取代的化合物。 還有’酣性經基之氫原子經由酸不安定基的取代率爲 平均以酣性經基全體之0莫¥%以±,較ί圭爲30莫耳%以 匕,其上限爲1 0 0莫耳(V y . _ — 上 耳%’更佳爲80旲耳%。羧基之氫原 子經由酸不安定基的β 代Μ爲平均以羧基全體之5〇莫耳% 以上,較佳爲7 〇莫耳y h| , 以 耳%以上,其上限爲100莫耳%。 此時,此類具有一伽 _ 〜個以上酚性羥基的化合物或具有羧 基之化合物以下述式( — )〜(D 1 4 )所示之化合物爲佳 -46- (43) 1308994
OH
(CH3)2CH
(D]3) (D2) d2〇2
(D6)
(D14) 但,式中R2QI、R2(n爲分別表示氫原子、碳數1〜8個之 -47 - 1308994 (45) 脲等之經四烷氧甲基取代的甘脲類,經取代及未取代雙羥 甲基苯酚類、雙酚A等之酚類化合物與表氯醇等之縮合物 〇 特佳之交聯劑可列舉1,3,5,7 -四甲氧甲基甘脲等 之1’ 3,5,7—四氫甲基甘脲、2,6—二羥甲基對一甲苯 酚、2,ό~二羥甲基苯酚、2,2 - ,6,—四羥甲基雙 酚Α、及1,4_雙〔2-(2-羥丙基)〕一苯、ν,Ν, ,Ν> —四甲氧甲基脲與六甲氧甲基蜜胺等。 添加量雖爲任意,但可相對於光阻材料中之基質樹脂 1〇〇重量份以1〜25重量份,較佳爲5〜20重量份,彼等可 單獨或倂用添加二種以上。 又,本發明之鹼性化合物以外,亦丁倂用一種或二種 以上先前所使用的鹼性化合物。若大致區別則可列舉一級 、二級、三級之脂族胺類、混合胺類、芳香族胺類、雜環 胺類 '具有羧基之含氮化合物、具有磺醯基之含氮化合物 、具有羥基之含氮化合物 '具有羥苯基之含氮化合物、醇 性含氮化合物、醯胺衍生物、醯亞胺衍生物等。 具體而言,一級之脂族胺類可例示氨、甲胺、乙胺、 正丙胺、異丙胺、正丁胺' 異丁胺 '第二丁胺、第三丁胺 、戊胺、第三戊胺' 環戊胺、己胺、環己胺 '庚胺、辛胺 、壬胺、癸胺、十二烷胺、鯨蠟胺、甲二胺、乙二胺、四 伸乙基五胺等,二級之脂族胺類可例示二甲胺、二乙胺、 二正丙胺、二異丙胺、二正丁胺、二異丁胺、二第二丁胺 、二戊胺 '二環戊胺、二己胺、二環己胺、二庚胺、二辛 -49- 1308994 (46) 胺、二壬胺、二癸胺、二(十二烷胺)、二鯨蠟胺、N, N—二甲基甲二胺、N,N —二甲基乙二胺、N,N—二甲 基四伸乙基五胺等,三級之脂族胺類可例示三甲胺、三乙 胺、三正丙胺、三異丙胺、三正丁胺、三異丁胺、三第二 丁胺、三戊胺、三環戊胺、三己胺、三環己胺、三庚胺、 三辛胺、三壬胺、三癸胺、三(十二烷胺)、三鯨蠟胺、 N,N,N' ,N^ —四甲基甲二胺、N,N,N^ ,N' — 四甲基乙二胺、N,N,N — ,一四甲基四伸乙基五胺 等。 混合胺類可例示例如二甲基乙胺、甲基乙基丙胺、苄 胺、苯乙胺、苄基二甲胺等。芳香族胺類及雜環胺類之具 體例可例示苯胺衍生物(例如苯胺、N _甲基苯胺、N -乙基苯胺、N —丙基苯胺、N,N_二甲基苯胺、2—甲基 苯胺、3 -甲基苯胺、4-甲基苯胺、乙基苯胺、丙基苯胺 、三甲基苯胺、2 -硝基苯胺、3 -硝基苯胺、4 一硝基苯 胺、2,4 _二硝基苯胺、2,6 -二硝基苯胺、3,5 _二硝 基苯胺、N,N—二甲基甲苯胺等)、二苯基(對_甲苯 基)胺、甲基二苯胺、三苯胺、苯二胺、萘胺、二胺基萘 、吼咯衍生物(例如吡咯、2 Η —吡咯、1 一甲基吡咯、2 ,4 一二甲基吡咯、2,5 —二甲基吡咯、Ν_甲基吡咯等 )、哼唑衍生物(例如哼唑、異晖唑等)、噻唑衍生物( 例如噻唑、異噻唑等)、咪唑衍生物(例如咪唑、4 -甲 基咪唑、4 一甲基_ 2 -苯基咪唑等)、吡唑衍生物、呋咱 衍生物、吡咯啡衍生物(例如吡咯啉、2 -甲基- I -吡咯 -50- 1308994 (47) 琳等)、吡咯烷衍生物(例如吡咯烷、N —甲基吡咯烷、 吼略院酮、N -甲基吡咯烷酮等)、咪唑啉衍生物 '咪唑 院酮衍生物、吡啶衍生物(例如吡啶、甲基吡啶、乙基吡 B定、丙基吡啶、丁基吡啶、4 — ( 1 _ 丁基戊基)吡啶 '二 甲基批陡、三甲基吡啶、三乙基吡啶、苯基吡啶、3 一甲 基_2 —苯基吡啶、4 —第三丁基吡啶、二苯基吡啶、苄基 吼症、甲氧基吡啶、丁氧基吡啶、二甲氧基吡啶、1 一甲 基_2_Dth啶、4一吡咯烷基吡啶、1 一甲基一 4_苯基吡啶 、2 _( 1 -乙基丙基)吡啶、胺基吡啶 '二甲胺基吡啶等 )、塔哄衍生物、嘧啶衍生物、吡畊衍生物、吡唑啉衍生 物、批哩烷酮衍生物、哌啶衍生物、哌畊衍生物、嗎啉衍 生物、吲哚衍生物、異吲哚衍生物、! Η _吲唑衍生物' 吲哚啉衍生物、喹啉衍生物(例如喹啉、3 -喹啉乙腈等 )、異喹啉衍生物、肉啉衍生物、喹唑啉衍生物、I]奎喔啉 衍生物、酞畊衍生物、嘌呤衍生物、蝶啶衍生物、咔唑衍 生物、菲啶衍生物、吖啶衍生物、吩哄衍生物、1,1 0 _ 菲繞林衍生物、腺嘌呤衍生物、腺苷衍生物 '鳥嘌呤衍生 物、鳥苷衍生物、尿嘧啶衍生物、尿哄衍生物等。 更且,含有羧基之含氮化合物可例示例如胺基苯甲酸 、吲哚羧酸、胺基酸衍生物(例如菸鹼酸、丙胺酸、精胺 酸 '天冬胺酸、麩胺酸、甘胺酸、組胺酸、異白胺酸、甘 胺醯白胺酸、白胺酸、甲硫胺酸、苯基丙胺酸、蘇胺酸、 離胺酸' 3—胺基吡啶一 2-羧酸、甲氧基丙胺酸)等,具 有磺醯基之含氮化合物可例示3 -吡啶磺酸、對一甲苯磺 -51 - 1308994 (48) _ € Di ϋ ¥ ’具有羥基之含氮化合物,具有羥苯基之含氮 ft t 性含氮化合物可例示2 一羥基吡啶、胺基甲苯 酌、2 ’ 4 — α|啉二醇、3 -吲哚甲醇水合物、單乙醇胺、 一乙醇胺、^乙醇胺、Ν一乙基二乙醇胺、Ν,Ν —二乙基 乙醇胺、三幾丙醇胺、2,2 ——亞胺基二乙醇、2-胺基 乙醇' 3 —胺基一丨―丙醇、4_胺基丁醇、4_ (2 — 羥乙基)嗎咻、2 一( 2 _羥乙基)吡啶、1 一( 2 一羥乙基 )_哄、1〜〔2 一 ( 2 一羥乙氧基)乙基〕哌哄、哌啶乙 醇、1_ (2〜羥乙基)吡咯烷、1— (2一羥乙基)一2一 吡咯烷酮、3 一哌啶基_丨,2 -丙二醇、3 -吡咯烷基—1 ’ 2 —丙二醇、8 —羥基久洛尼定(julolidine) 、3 —奎寧 環醇、3 —托品醇、1 一甲基—2一吡咯烷乙醇、1一氮丙啶 乙醇、N— (2—羥乙基)酞醯亞胺、N— (2_羥乙基) 異菸鹼醯胺等。醯胺衍生物可例示甲醯胺、N-甲基甲醯 胺、N,N —二甲基甲醯胺、乙醯胺、n —甲基乙醯胺、n ’ N-二甲基乙醯胺、丙醯胺、苄醯胺等。醯亞胺衍生物 可例示酞醯亞胺、琥珀醯亞胺、馬來醯亞胺等。 更且’亦可配合由下述一般式(B 1 )所示之鹼性化合 物中選出一種或二種以上。 更且’亦可添加由下述一般式(B ) - 1所示之驗性化 合物中選出一種或二種以上。 N (X) η (Υ) 3-η (Β) - 1 上述中,η=1、2或3。側鏈X可爲相同或相異,且可 以下述一般式(X ) -】〜(X — 3 )表示。側鏈γ爲表示相 -52- 1308994 (49) 同或異之氫原子、或直鏈狀、支鏈狀或環狀之碳數1〜20 個的烷基,且亦可含有醚基或羥基。X彼此亦可結合形成 環。
0 R302_〇_R303 R304 (Χ)·2 Ο --R305_11_〇—R3〇6 (X)-3 上述式中,R3GG、R3Q2、R305爲碳數1〜4個之直鏈狀 或支鏈狀之伸烷基、R3 m、R3<)4爲碳數1〜20個之直鏈狀、 支鏈狀或環狀之烷基,亦可含有一個或數個羥基、醚基、 酯基或內酯環。 R3()3爲單鍵、碳數1〜4個之直鏈狀或支鏈狀之伸烷基 、R3<)6爲碳數1〜20個之直鏈狀、支鏈狀或環狀之烷基, 亦可含有一個或數個羥基、醚基、酯基或內酯環。 上述一般式(B ) - 1所示化合物具體例示如下。 三(2—甲氧甲氧乙基)胺、三{2— (2_甲氧乙氧 基)乙基}胺、三丨2- (2 -甲氧乙氧甲氧基)乙基丨胺 、三(2— (1—甲氧乙氧基)乙基}胺、三{2— (1_甲 氧乙氧乙氧基)乙基丨胺、三丨2— (1—乙氧丙氧基)乙 基丨胺、三〔2— {2— (2_羥乙氧基)乙氧基}乙基〕 -53- 1308994 (50) 胺、4,7,13,16,21,24 -六噚 _1,10 —二吖雙環〔 8.8.8〕二十六烷、4,7,13,18-四哼-1,10 — 二吖雙 〔8.5_5〕二十烷、1,4,10,13—四吖一7,16 — 二吖雙 環十八烷、1 —吖—1 2 —冠—4、1 —吖—1 5 —冠一5、1 — 吖一 18 —冠一 6、三(2 —甲醯氧乙基)胺、三(2 —甲醯 氧乙基)胺、三(2—乙醯氧乙基)胺、三(2_丙醯氧乙 基)胺、三(2— 丁醯氧乙基)胺、三(2 -異丁醯氧乙基 )胺、三(2 —戊醯氧乙基)胺、三(2 —特戊醯氧乙基) 胺、N,N—雙(2 —乙醯氧乙基)—2— (乙醯氧乙醯氧 基)乙胺、三(2—甲醯羰氧乙基)胺、三(2—第三丁氧 羰氧乙基)胺、三〔2 - (2_氧丙氧基)乙基〕胺、三〔 2— (甲氧羰甲基)氧乙基〕胺、三〔2— (第三丁氧羰甲 氧基)乙基〕胺、三〔2— (環己氧羰甲氧基)乙基〕胺 、三(2_甲氧羰乙基)胺、三(2_乙氧羰乙基)胺、N ,N -雙(2_羥乙基)一2—(甲氧羰基)乙胺、N,N_ 雙(2—乙醯氧乙基)_2_ (甲氧羰基)乙胺、N,N — 雙(2 -羥乙基)_2_ (乙氧羰基)乙胺、N,N_雙(2 —乙醯氧乙基)-2—(乙氧羰基)乙胺、N,N—雙(2 —羥乙基)一2_ (2 —甲氧乙氧羰基)乙胺、N,N —雙
(2 —乙醯氧乙基)一2— (2 —甲氧乙氧羰基)乙胺、N
,N-雙(2 —羥乙基)—2— (2_羥乙氧羰基)乙胺、N ,N —雙(2 —乙醯氧乙基)一 2- (2 -乙醯氧乙氧羰基 )乙胺、N,N—雙(2 —羥乙基)—2—〔(甲氧羰基) 甲氧羰基〕乙胺、N,N—雙(2_乙醯氧乙基)一2— 〔 -54- 1308994 (51) (甲氧羰基)甲氧羰基〕乙胺、N,N—雙(2—羥乙基) —2— (2—氧丙氧羰基)乙胺、N,N_雙(2 —乙醯氧乙 基)_2 — (2 —氧丙氧羰基)乙胺、N,N_雙(2 —羥乙 基)一2—(四氫糠氧羰基)乙胺、N,N —雙(2-乙醯 氧乙基)—2_ (四氫糠氧羰基)乙胺、N,N—雙(2_ 羥乙基)一 2— 〔 (2—氧基四氫呋喃一3_基)氧羰基〕 乙胺、N,N—雙(2—乙醯乙基)—2_ 〔 (2 —氧基四氫 呋喃一3_基)氧羰基〕乙胺、N,N_雙(2 -羥乙基) 一 2— (4 —羥丁氧羰基)乙胺、N,N —雙(2_甲醯氧乙 基)_2_ (4-甲醯氧丁氧羰基)乙胺、N,N —雙(2 -甲醯氧乙基)2_ (甲醯氧乙氧羰基)乙胺、N,N—雙( 2 —甲氧乙基)一2_ (甲氧羰基)乙胺、N— (2 —羥乙 基)雙〔2— (甲氧羰基)乙基〕胺、N— (2—乙醯氧乙 基)雙〔2— (甲氧羰基)乙基〕胺、N(2 -羥乙基)雙 〔2— (乙氧羰基)乙基〕胺、N— (2—乙醯氧乙基)雙 〔2— (乙氧羰基)乙基〕胺、N_ (3_羥基_1_丙基 )雙〔2— (甲氧羰基)乙胺〕胺、N— (3 —乙醯氧基一 1_丙基)雙〔2- (甲氧羰基)乙胺〕胺、N— (2_甲 氧乙基)雙〔2—(甲氧羰基)乙胺〕胺、N—丁基雙〔2 一(甲氧羰基)乙胺〕胺、N_ 丁基雙〔2 - (甲氧乙氧 羰基)乙基〕胺、N—甲基雙(2—乙醯氧基)胺'N -乙 基雙(2_乙醯氧乙基)胺、N_甲基雙(2—特戊醯氧乙 基)胺、N—乙基雙〔2— (甲氧羰氧基)乙基〕胺、N — 乙基雙〔雙〔2— (第三丁氧羰氧基)乙基〕胺、三(甲 -55- (52) 1308994 氧羰甲基)胺、三(乙氧類甲基)胺、N— 丁基雙(甲氧 羰甲基)胺、N —己基雙(甲氧羰甲基)胺、yS — (二乙 胺基)一—戊內酯’但並非限定於此。 更且,亦可添加—種或二種以上具有下述一般式(B )- 2所示環狀構造的鹼性化合物。
(式中’ X爲如前述’ R3G7爲碳數2〜20個之直鏈狀或分枝 狀之伸烷基’亦可含有一個或數個羰基、醚基、酯基、硫 基)。 上述一般式(B) - 2具體而言可列舉1 一〔2一(甲氧 甲氧基)乙基〕11比略烷、1~ 〔2—(甲氧甲氧基)乙基〕 哌啶、4 一 〔 2 —(甲氧甲氧基)乙基〕嗎啉、1 — 〔 2 一 〔 (甲氧乙氧基)甲氧基〕乙基〕吡咯烷、1—〔2_〔(甲 氧乙氧基)甲氧基〕乙基〕哌啶、4一 〔2_ 〔(甲氧乙氧 基)甲氧基〕乙基〕嗎啉、醋酸2 -(1一吡咯烷基)乙酯 、醋酸2 —哌啶乙酯 '醋酸2 ~嗎啉乙酯、甲酸2 — ( 1 —吡 咯烷基)乙酯、丙酸2 —哌啶乙酯、乙醯氧基醋酸2一嗎啉 乙酯、甲氧基醋酸2 - (1—吡咯烷基)乙酯、4一 〔2—( 甲氧羰氧基)乙基〕嗎啉、1~〔2- (第三丁氧羰氧基) 乙基〕哌卩定、4 — 〔 2 — ( 2 ~甲氧乙氧羰氧基)乙基〕嗎 啉、3 - ( 1 _吡咯烷基)丙酸甲酯、3 -哌啶基丙酸甲酯 、3 -嗎啉基丙酸甲酯、(硫嗎啉基)丙酸甲酯、2_ 甲基一 3—(吡咯烷基)丙酸甲酯、3一嗎啉基丙酸乙酯、 -56- 1308994 (53) 3—哌啶基丙酸甲氧羰基甲酯、3— (1 一吡咯烷基)丙酸2 一羥乙酯、3_嗎啉基丙酸2_乙醯氧乙酯、3—(1 一吡咯 烷基)丙酸2 —氧基四氫呋喃一 3 —基、3 -嗎啉基丙四酸 氫糠酯、3 —哌啶基丙酸縮水甘油酯' 3 -嗎啉基丙酸2 -甲氧乙酯' 3_ (1_吡咯烷基)丙酸2_ (2 —甲氧乙氧基 )乙酯、3 —嗎啉基丙丁酯、3 -哌啶基丙環己酯、α - ( 1一吡咯烷基)甲基_r_ 丁內酯、Θ —哌啶基一 r 丁內 酯、yS —嗎啉基一 <5 —戊內酯、1 一吡咯烷基醋酸甲酯、 哌啶基醋酸甲酯、嗎啉基醋酸甲酯、硫嗎啉基醋酸甲酯、 1一吡咯烷基醋酸乙酯、嗎啉基醋酸2—甲氧乙酯。 更且,可添加下述一般式(B) _3〜(B) -6所示 之含有氰基的鹼性化合物。
CN (B)-4 X·
R309——CN
(B)-5
(B)-6 (式中,X,R3Q7,η爲如前述,R3Q8、R3Q9爲相同或相異 -57- 1308994 (54) 之碳數1〜4個之直鏈狀或支鏈狀伸烷基) 含有氰基之鹼具體而言可例示3 - (二乙胺基)丙腈 、N,N—雙(2_羥乙基)—3 —胺基乙腈、N,N_雙(2 一乙醯氧乙基)一 3 —胺基丙腈、N,N —雙(2 —甲醯氧 乙基)一 3 —胺基丙腈、N,N—雙(2 —甲氧乙基)一3-胺基丙腈、N,N —雙〔2— (甲氧甲氧基)乙基〕一 3 — 胺基丙腈、N— (2_氰乙基)—N— (2—甲氧乙基)—3 一胺基丙酸甲酯、N— (2-氰乙基)—N— (2 —羥乙基
)—3 —胺基丙酸甲酯、N— (2—乙醯氧乙基)-N— (2 一氰乙基)-3—胺基丙酸甲酯、N — (2 —氰乙基)_N 一乙基一3 —胺基丙腈、N—(2_氰乙基)—N— (2-羥 乙基)一 3 —胺基丙腈、N— (2 —乙醯氧乙基)—N— (2 一氰乙基)—3_胺基丙腈、N— (2 -氰乙基)—N— (2 一甲醯氧乙基)一3-胺基丙腈、N- (2 —氰乙基)—N 一 (2 —甲氧乙基)_3 —胺基丙腈、N— (2—氰乙基) —N — 〔2—(甲氧甲氧基)乙基〕_3 —胺基丙腈、N — (2_氰乙基)_N — (3 -經基—1—丙基)一 3_胺基丙 腈、N— (3_乙醯氧基_1_丙基)_N— (2—氰乙基) 一 3 —胺基丙腈、N— (2_氰乙基)一N— (3 —甲醯氧基 一 1—丙基)一3 -胺基丙腈、N— (2-氰乙基)_N —四 氫糠基一 3 —胺基丙腈、N,N —雙(2 -氰乙基)_3 —胺 基丙睛、二乙胺基乙睛、N,N—雙(2—羥乙基)胺基乙 腈、N,N—雙(2 —乙醯氧基)胺基乙腈、N,N —雙(2 一甲醯氧乙基)胺基乙腈、N,N —雙(2_甲氧乙基)胺 -58- 1308994 (55) 基乙腈、N,N—雙〔2_ (甲氧甲氧基)乙基〕胺基乙腈 、N_氰甲基一 N— (2—甲氧乙基)_3 —胺基丙酸甲酯 、N_氰甲基—N — (2 —羥乙基)一3_胺基丙酸甲酯'N 一 (2—乙醯氧乙基)一 N—氰甲基一 3 —胺基丙酸甲酯、 N_氰甲基一N— (2_羥乙基)胺基乙腈、N_ (2_乙醯 氧乙基)一N— (氰甲基)胺基乙腈、N—氰甲基一 N_ ( 2 —甲醯氧乙基)胺基乙腈、N_氰甲基一 N— (2—甲氧 乙基)胺基乙腈、N —氰甲基一 N— 〔2—(甲氧甲氧基) 乙基〕胺基乙腈、N— (氰甲基)_N— (3 —羥基—1 一 丙基)胺基乙腈、N_ (3_乙醯氧基一 1 一丙基)—N_ (氰甲基)胺基乙腈、N—氰甲基一 N_ (3 —甲醯氧基一 1 一丙基胺基乙腈、N,N —雙(氰甲基)胺基乙腈、1 — 吡咯烷丙腈、1 一哌啶丙腈、4 _嗎啉丙腈、1 一吡咯烷乙 腈、1 一哌啶乙腈' 4 一嗎啉乙腈、3 -二乙胺基丙酸氰甲 酯、n,N—雙(2—羥乙基)_3 -胺基丙酸氰甲酯、N, N —雙(2—乙醯氧乙基)一 3_胺基丙酸氰甲酯、N,N — 雙(2 —甲醯氧乙基)一3_胺基丙酸氰甲酯、N,N_雙 (2 —甲氧乙基)一3_胺基丙酸氰甲酯、N,N_雙〔2 — (田氧甲氧基)乙基〕_3 —胺基丙酸氰甲酯、3 —二乙胺 基丙酸(2-氰乙基)酯、N,N —雙(2 —羥乙基)—3 — 胺基丙酸(2_氰乙基)酯' N,N—雙(2 —乙醯氧乙基 )—3 —胺基丙酸(2 —氰乙基)酯、N,N —雙(2 —甲醯 氧乙基)一3 —胺基丙酸(2 —氰乙基)酯、N,N—雙(2 —甲氧乙基)一 3 —胺基丙酸(2—氰乙基)酯、N,N — -59- 1308994 (56) 雙〔2— (甲氧甲氧基)乙基〕一 3-胺基丙酸(2—氰乙 基)酯、1 一吡咯烷丙酸氰甲酯、1 一哌啶丙酸氰甲醋、4 —嗎啉丙氰甲酯、1_吡咯烷丙酸(2-氰乙基)酯、 哌啶丙酸(2_氰乙基)酯、4一嗎啉丙酸(2 —氰乙基) 酯。 此些鹼性化合物之配合量爲相對於基質樹脂1 0 0份以0 〜2份、特別以〇〜1份爲佳。 於本發明之光阻材料中,除了上述各成分以外,視需 要亦可配合界面活性劑、酸性化合物。 使用本發明之光阻材料形成圖型之方法可採用常法, 且可採用 (1 )於基板上塗佈上述增強化學性光阻材料的步驟 , (2 )其次於加熱處理後,透過光罩以波長3 00 nm以 下,特別爲25 0 nm以下之高能量線或電子射線予以曝光之 步驟, (3 )加熱處理後,使用顯像液予以顯像之步驟。 還有,本發明之鹼性化合物的配合量爲相對於全基質 樹脂1 〇 〇份以0.0 0 1〜2份,特別爲0 _ 0 1〜1份爲適當。配合 量若少於0 · 0 0 1份則無配合效果,若超過2份則靈敏度有時 過度降低。 一般式(1)〜(7)所示之本發明之具有苯並咪唑骨 架及極性官能基的鹼性化合物,根據化合物之構造選擇最 適方法進行製造爲佳。具體而言可例示使用苯並咪唑化合 -60- 1308994 (57) 物之N-烷基化反應的方法’或使用於N上具有羥烷基取 代基之苯並咪唑化合物之0 一醯化或〇 —烷基化反應的方 法,但並非限定於此些方法。 以下,詳細說明。 首先,第一方法可列舉以咪唑類之N —烷基化反應之 製造法,此方法爲基本上可應用於一般式(1)〜(7)全 部所對應之鹼性化合物的合成。 R1 N^NH R1 —_ — A ό (8) ⑴ (式中,R1爲氫原子、碳數1〜1〇個之直鏈狀 '分枝狀或 環狀之烷基、或碳數6〜10個之芳基或碳數7〜10個之芳烷 基。R2爲碳數1〜20個之直鏈狀、分枝狀或環狀之具有極 性官能基的烷基,含有一個以上酯基、乙縮醛基或氰基做 爲極性官能基,且其他亦可含有一個以上羥基、羰基、醚 基、硫基或碳酸酯基。X爲表示鹵原子、對一甲苯磺醯氧 基、甲烷磺醯氧基、三氟甲烷磺醯氧基、羥基等之離去基 )° 烷基化劑R2X之使用量爲相對於苯並咪唑化合物(8 )1莫耳以0.3〜10莫耳,特別以〇_5〜2莫耳爲佳。反應爲 在無溶劑或溶劑中進行。溶劑可由甲醇、乙醇、異丙醇、 第三丁醇、乙二醇等之醇類、己烷、庚烷、苯、甲苯、二 甲苯等之烴類、二乙醚、二丁醚、四氫呋喃、1,4一二af 烷 '二甘醇二甲醚等之醚類、二氯甲烷、氯仿、1,2_二 -61 - 1308994 (59) 法予以精製。或者未進行水系後處理(aqueous work-up) ’將反應生成之鹽於過後將反應液直接予以精製亦可。 根據目的物之構造,此外,經由苯並咪唑化合物對於 丙烯酸酯、丙烯腈等之α ,/3 -不飽和羰基化合物的加成 反應亦可取得目的之含有極性官能基的苯並咪唑化合物( 1 )。 第二方法可列舉於Ν上使用具有羥烷基取代基之苯並 咪唑化合物的Ο —醯化或0 -烷基化反應之製造法。此方 法特別有效於製造一般式(2 ) 、 ( 4 ) 、 ( 5 )所示之鹼 性化合物。 R1 1 r,6y卜入 Ν Ν (ΟΗ)η 5 5 (9) (1〇) (R1爲氫原子 '碳數1〜1〇個之直鏈狀、支鏈狀或環狀之 烷基、或碳數6〜10個之芳基或碳數7〜個之芳烷基。 R15爲碳數1〜10個之直鏈狀 '支鏈狀或環狀之n+1價的烴 基。R16爲醯基或1 一烷氧烷基。Y爲表示鹵原子 '烷基或 芳磺醯氧基 '羥基、醯氧基、苯氧基、烷氧基等之離去基 。η = 1 或 2 )。 上述式中,一般式(10)所示之化合物爲n=l、R16 =醯基時爲對應於前述一般式(2) 、n=1' Rl6=1 一烷 氧烷基時爲對應於前述一般式(5 )、η = 2時爲對應於前 述一般式(4 )之構造。 -63- 1308994 (60) 反應爲令前述方法或令苯並咪唑化合物對於環氧乙1 完 、環氧丙烷、縮水甘油、鸣丁烷等之環狀醚類、碳酸伸乙 酯、碳酸伸丙酯等之碳酸酯類的加成反應所製造之N-( 羥烷基)苯並咪唑化合物(9 )以烷基化劑或醯化劑R16 Y 作用則可取得目的之含有極性官能基的苯並咪唑化合物( 10)。 R16爲醯基時,具體而言R16Y可例示甲酸、甲酸醋酸 混合酐、醋酸酐、醋醯氯、丙酸酐、丙醯氯、丁醒氯、異 丁醯氯、戊醯氯 '特戊醯氯、甲氧基醋醯氯、乙醯氧基醋 醯氯、焦羧酸二第丁酯、醋酸苯酯、醋酸對-硝基苯酯、 醋酸2,4,6 —三氯苯酯,R16爲1_烷氧烷基時,具體而 言R16Y可例示甲氧甲基氯、(2—甲氧乙氧基)甲基氯、 (2 —甲硫乙氧基)甲基氯、1—氯一 1—乙氧基乙烷、1一 氯—1—乙氧基丙烷、1 一氯—1—丙氧基乙烷、、2 —氯基 四氫呋喃、2 -氯一 2H -四氫吡喃,但並非限定於此。 R16 Y之使用量爲相對於N-(羥烷基)苯並咪唑化合物( 9) 1莫耳,n=l時爲0.5〜5.0莫耳,特別以1_〇〜2.5莫耳 爲佳,n=2時爲1.0〜10莫耳,特別以2.0〜5.0莫耳爲佳。 反應爲於無溶劑或溶劑中進行。溶劑可由己烷、庚烷、苯 、甲苯、二甲苯等之烴類,二乙謎、二丁醚、四氫D夫喃、 1,4 一二哼烷、二甘醇二甲醚等之醚類,二氯甲烷、氯仿 、1,2—二氯乙烯等之氯系溶劑,、N,N—二甲基甲醯 胺、N,N —二甲基乙醯胺、二甲基亞硯、N —甲基π比略院 酮等之非質子極性溶劑類,甲酸、醋酸等之羧酸類,醋酸 -64- 1308994 (61) 乙醋、醋酸丁醋等之醋類,丙嗣' 2- 丁酮等之酮I類,乙 腈等之腈類’吡啶、三乙胺等之胺類,甲醇、乙醇、2 ~ 丙醇、第三丁醇等之醇類,水中根據反應條件選擇單獨或 混合使用。爲了促進反應亦可加入驗性化合物,具體而言 可例示氫氧化鈉、氫氧化鉀、碳酸鉀、碳酸鈉 '重碳酸氫 鈉、氫化鈉' 氫化鈣、第三丁醇鉀、第三丁醇鋰等之鹼或 鹼土金屬之鹽類,正丁鋰 '二異丙基醯胺鋰、六甲基二较 氮鋰、溴化二異丙基醯胺鎂等之有機金屬類,吡π定、三乙 胺、二異丙基乙胺、Ν’ N —二甲基苯胺' 4 —二甲胺基口比 啶等之有機胺類,但並非限定於此。 鹼性化合物可單獨或混合使用二種以上,且使用量爲 相對於R16Y 1莫耳,使用0.8〜10莫耳,特別爲〇·9〜3〇莫 耳爲佳。反應溫度爲在-7 0 °C至溶劑之迴流溫度爲止之範 圍中選擇’特別於0 °C〜5 0 °C之範圍下進行爲佳。r 16 =酷 基、Y =烷氧基時,R16Y爲羧酸酯化合物,本反應爲醋交 換反應。此時,將上述鹼性化合物相對於R 16 Y 1莫耳,使 用0.001〜5.0莫耳’特別爲0.005〜0_5莫耳做爲反應觸媒 ,且一邊蒸除反應所生成的醇類(Y — H) —邊進行反應 爲佳。反應時間期望爲經由氣相層析(GC )和薄層層析 (TLC )追踪反應且以反應完成視爲產率之點,通常爲〇·2 〜2 0小時左右。由反應混合物中經由通常的水系後處理( aqueous work-up)取得目的之含有極性官能基的苯並咪哩 化合物(1 〇 )。若需要,可將化合物(1 〇 )以蒸譜、層析 '再結晶等之常法予以精製。或者未進行水系後處理( -65- 1308994 (62) aqueous work-up),將反應生成之鹽於過濾後或將反應液 直接以精製亦可。 〔發明之效果〕 配合本發明之具有苯並咪唑骨架及極性官能基之鹼性 化合物所調製的光阻材料爲解像度、聚焦界限優良,且可 用於使用電子射線和紫外線的微細加工。於KrF光阻、 ArF光阻、F2光阻、EB光阻中提供高的配合效果,適合做 爲形成LSI製造用之微細圖型的材料。 【實施方式】 〔實施例〕 以下,示出合成例、實施例及比較例具體說明本發明 ,但本發明並非被限制於下述實施例。 以下列所示之方法合成本發明之鹼化合物。 〔合成例1〕醋酸2 - (1H-苯並咪唑一 1 一基)乙酯(胺 2之合成) 將苯並咪唑118克 '環氧乙烷48.5克、Ν’ N -二甲基 乙醯胺4〇〇克之混合物於壓熱鍋中以100艽、加熱攪拌16小 時。減壓蒸除溶劑’取得粗製2 一 ( 1 Η 一苯並咪唑一 1_ 基)乙醇。 於所得之粗製2- (1Η-苯並咪唑一 1 一基)乙醇與 吡啶5 0 0克之混合物中滴下醋酸酐1 2 2克’並於氮氣環境氣 -66 - (65) 1308994 ,進行通常之水系後處理,以柱層析之精製,取得甲氧基 醋酸2 — (1H —苯並咪唑一1—基)乙酯(產率65%)。
〔合成例5〕 3 -(2 -苯基一 1H —苯並咪唑—1 一基)丙 酸甲酯(胺26 )之合成 將2 —苯基苯並咪唑194克、丙烯酸甲酯103克、甲醇 5 00克之混合物於60t、加熱攪拌1〇〇小時。減壓蒸除溶劑 後,以柱層析進行精製,取得3 — ( 2 —苯基—1 Η -苯並 咪唑-1 一基)丙酸甲酯(產率60% )。
C02Me 〔合成例6〕 4— (1Η —苯並咪唑_1 一基)丁酸乙酯( 胺2 9 )之合成 除了使用同莫耳之4-溴基丁酸乙酯代替醋酸3 —溴基 丙酯以外,以合成例3同樣之方法合成4- (1Η -苯並咪 唑一1 一基)丁酸乙酯(產率82%)。
•69- 1308994 (66) 〔合成例7〕 1— 〔2— 〔 (2 —甲氧乙氧基)甲氧基〕乙 基〕1H-苯並咪唑(胺34)之合成 除了使用同莫耳之1 一溴一 2— 〔 (2—甲氧乙氧基) 甲氧基〕乙烷代替醋酸3 -溴基丙酯以外,以合成例3同樣 之方法合成1— 〔2- 〔 (2 —甲氧乙氧基)甲氧基〕乙基 〕1H-苯並咪唑(產率74%)。 Ν^Ν^ι
5 〇0〇MC 胺34 〔合成例8〕 1一 〔2— (1—乙氧乙氧基)乙基〕1H—苯 並咪唑(胺3 8 )之合成 除了使用同莫耳之2 —溴一1— (1—乙氧乙氧基)乙 烷代替醋酸3 -溴基丙酯以外,以合成例3同樣之方法合成 1- 〔2— (1—乙氧乙氧基)乙基〕1H—苯並咪唑(產率 55% )。
胺38 〔合成例9〕 1— 〔2,2 -二甲基一1,3 —二噚戊烷一 4 一基)甲基〕1H —苯並咪唑(胺54)之合成 除了使用同莫耳之4一溴甲基—2,2 -二甲基—1,3 -70- 1308994 (67) -二噚茂烷代替醋酸3 -溴基丙酯以外,以合成例3同樣之 方法合成1—〔2,2 —二甲基_1,3_二哼戊烷—4 —基) 甲基〕1H-苯並咪唑(產率80%)。
胺54
〔合成例10〕 〔2— (1’ 3 — 一嗎戊院—2_基)乙 基〕1H—苯並咪唑(胺61)之合成 除了使用同莫耳之2 —(2—溴乙基)一 1,3 —二哼茂 烷代替醋酸3 —溴基丙酯以外,以合成例3同樣之方法合成 1— 〔2— (1,3 —二鸣戊院一 2 —基)乙基〕1H —苯並味 唑(產率78% )。
胺61
〔合成例11〕 4- (1H-苯並咪唑-1-基)丁睛(胺64 )之合成 除了使用同莫耳之4一溴基丁腈代替醋酸3-溴基丙酯 以外,以合成3同樣之方法合成4_ (1H —苯並咪唑_1_ 基)丁睛(產率83% )。 -71 - 1308994 1308994(71) 比較例 聚合物 (重量份) 產酸劑 (重量份) 驗 (重量份) 阻溶劑/ 交聯劑 (重量份) 靈敏 (m J / c m ) 焦距 界限 (um) 聚合物5 (100) P AG2 (2) 1,8-雙(二 甲胺基)萘 (0-2) — 8 0.2 聚合物5 (100) P AG2 (2) DBN (0_1) — 35 0.4 聚合物5 (100) PAG2 (2) DBN (0-1) — 34 0.4 聚合物5 (100) P AG2 (2) DBU (0.1) — 32 0.5 聚合物1 (100) P AG5 (2) DBN (0.1) — 52 0.2 聚合物2 (100) P AG5 (2) DBN (0.1) — 62 0.5 聚合物3 (100) PAG5 (2) DBN (0.1) — 5 1 0.3 聚合物3 (100) PAG4 (2) DBN (0.1) — 5 1 0.2 聚合物4 (100) PAG2 (2) DBN (0.1) 交聯劑 (15) 33 0.3 聚合物6 (100) PAG 1 (2) DBN (0.1) — 46 0.6 聚合物7 (100) PAG1 (2) DBN (0.1) — 48 0.6 聚合物8 (100) PAG 1 (2) DBN (0.1) — 42 0.6 聚合物9 (100) PAG1 (2) DBN (0-1) — 45 0.4 聚合物1 0 (100) PAG 1 (2) DBN (0_1) — 48 0.3 聚合物1 1 (100) PAG 1 (2) DBN (0.1) — 42 0.4 聚合物1 2 (100) PAG4 (2) DBN (0-1) — 46 0.2 聚合物1 3 (100) PAG 1 (2) DBN (0.1) 一 45 0.3 聚合物5 (100) PAG2 (2) DBN (0.1) DBN (0.1) 29 0.3 -75- 1308994 (72) 1,8 —雙(二甲胺基)萘 nn/ DBN :
一 5 —壬燃
DBU: 1,8 —二吖雙環〔5.4_0〕一 7_ 十一碳烯
-76- 1308994(73)
聚合物1 Mw 10,000 Mw/Mn 1.10
聚合物2 Mw 10,000 Mw/Mn 1.10
聚合物3 Mw 36,000 Mw/Mn 1.60
77 1308994(74)
聚合物4 Mw 10,000 Mw/Mn 1.10
聚合物5 Mw 12,000 Mw/Mn 1.60
聚合物6 Mw 8,000 Mw/Mn 1.90
-78- 1308994(75)
聚合物7 Mw 10,000 Mw/Mn 1.50
°x 聚合物8 Mw 11,000 Mw/Mn 1.58
聚合物9 Mw 8,000 Mw/Mn 2.0
聚合物10 Mw 13,000 Mw/Mn 1.20
-79- 1308994(76)
聚合物11 Mw 8,000 Mw/Mn 1.10
聚合物12 Mw 8,000 Mw/lv&i 1.80
聚合物13 Mw 89000 1.80
-80- 1308994(77)
PAG1 —〒+cf3cf2cf2cf2so3_
PAG2
〇
SO3' PAG4
PAG5 -81 - (78)1308994
DRI1
交聯劑1
-82-
Claims (1)
- 拾、申請專利範圍 第93114306號專利申請案 中文申請專利範圍修正本 民國97年10月16日修正 1 - 一種光阻材料,其特徵爲含有一種或二種以上下 述一般式(1)〜(5)所示之具有苯並咪唑骨架及極性官 能基的鹼性化合物,(〇R8)2(式中,R1爲氫原子、碳數1〜10個之直鏈狀、支鏈狀或 環狀之烷基、碳數6〜10個之芳基或碳數7〜10個之芳烷基 ;R3、R9、R12、R14爲碳數1〜10個之直鏈狀、支鏈狀或 環狀之伸烷基;R4爲氫原子或碳數1〜15個之烷基,亦可 含有一個或數個羥基、羰基、酯基、醚基、硫基、碳酸酯 基、氰基或乙縮醛基;R7爲碳數2〜10個之直鏈狀、支鏈 狀或環狀之三價烴基;R8爲分別相同或相異之碳數1〜1 0 個的醯基,亦可含有一個或數個酯基或醚基,或二個R8彼 此爲結合形成環狀碳酸酯或環狀乙縮醛;R1G爲氫原子或 1308994 碳數1〜10個之直鏈狀、支鏈狀或環狀院基;Rll爲碳數1 〜10個之直鏈狀、支鏈狀或環狀之烷基,亦可含有—個或 數個醚基 '硫基或乙縮醛基;或R1()與R11亦可結合形成環 ;R13爲碳數1〜1〇個之直鏈狀、支鏈狀或環狀之烷基, R13彼此亦可結合形成環)。 2- 一種正型光阻材料,其特徵爲含有 (A )如申請專利範圍第1項之鹼性化合物, (B )有機溶劑, (C)具有經酸不安定基所保護之酸性官能基的鹼 不溶性或難溶性樹脂’該酸不安定基脫離時成爲鹼可溶性 的基質樹脂, (D )產酸劑。 3- 如申請專利範圍第2項之正型光阻材料,其爲更含 有(E )阻溶劑。 4. 一種負型光阻材料,其特徵爲含有 (A )如申請專利範圍第1項之鹼性化合物, (B)有機溶劑, (c/)鹼可溶性樹脂,經由交聯劑予以交聯爲鹼 難溶性的基質樹脂, (D )產酸劑, (F )經由酸予以交聯之交聯劑。 5. —種圖型形成方法,其特徵爲包含 (1 )令如申請專利範圍第2〜4項中任一項之增強 化學性光阻材料於基板上塗佈之步驟, -2 - 1308994 (2 )其次於加熱處理後’透過光罩以波長3 00 nm 以下之高能量線或電子射線予以曝光之步驟’ (3 )加熱處理後,使用顯像液予以顯像之步驟。 6 .—種下述一般式(1 )所不之驗性化合+'物’.(式中,R1爲氫原子、碳數1〜1〇個之直鏈狀、支鏈狀或 環狀之烷基、碳數6〜10個之芳基或碳數7〜10個之芳烷基 ;R3爲碳數1〜10個之直鏈狀、支鏈狀或環狀之伸烷基: R4爲氫原子或碳數1〜15個之烷基,亦可含有一個或數個 羥基、羰基、酯基、醚基、硫基、碳酸酯基 '氰基或乙縮 醛基)。 7 . —種下述一般式(2 )所示之鹼性化合物, R1(式中,R1爲氫原子、碳數1〜10個之直鏈狀、支鏈狀或 環狀之烷基、碳數6〜10個之芳基或碳數7〜10個之芳烷基 ;R7爲碳數2〜10個之直鏈狀、支鏈狀或環狀之三價烴基 ;R8分別相同或相異之碳數1〜1 0個的醯基,亦可含有一 個或數個醋基或酸基,或二個R8彼此爲結合形成環狀碳酸 酯或環狀乙縮醛)。 -3- 1308994 8. 一種下述一般式(3 )表示之鹼性化合物 R1 R10 n^^Vr、o人 o'R ό (3) (式中,R1爲氫原子 、碳數1〜10個之直鏈狀、支鏈狀或 環狀之烷基、碳數6〜 .10個之芳基或碳數7〜10個之芳烷基 ;R9爲碳數1〜10個之直鏈狀、支鏈狀或環狀之伸烷基; R10爲氫原子或碳數1〜1〇個之直鏈狀、支鏈狀或環狀烷基 ;R11爲碳數1〜10個之直鏈狀、支鏈狀或環狀烷基’亦可 含有一個或數個醚基、硫基或乙縮醛基;或!^1()與Rl1亦可 結合形成環)。 9. 一種下述一般式(4)所示之鹼性化合物’ (式中,R1爲氫原子 R1 A^ryor13 5 〇R13 ⑷ 、碳數1〜ίο個之直鏈狀、支鏈狀或 環狀之烷基、碳數6〜10個之芳基或碳數7〜10個之芳烷基 ;R12爲碳數1〜10個之直鏈狀、支鏈狀或環狀之伸烷基; R13爲碳數1〜10個之直鏈狀、支鏈狀或環狀之烷基,R13 彼此亦可結合形成環)。 1 0. —種下述一般式(5 )所示之鹼性化合物, 1308994 R】(5) (式中,R1爲氫原子、碳數1〜10個之直鏈狀、支鏈狀或 環狀之烷基、碳數6〜10個之芳基或碳數7〜10個之芳烷基 ;R14爲碳數1〜10個之直鏈狀、支鏈狀或環狀之伸院基) -5-
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JP4029288B2 (ja) * | 2003-05-21 | 2008-01-09 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP4420226B2 (ja) | 2005-02-18 | 2010-02-24 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
JP4590325B2 (ja) * | 2005-08-01 | 2010-12-01 | 富士フイルム株式会社 | レジスト組成物及び該レジスト組成物を用いたパターン形成方法 |
EP1780199B1 (en) * | 2005-10-31 | 2012-02-01 | Shin-Etsu Chemical Co., Ltd. | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process |
EP1780198B1 (en) | 2005-10-31 | 2011-10-05 | Shin-Etsu Chemical Co., Ltd. | Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process |
JP4803377B2 (ja) * | 2006-10-25 | 2011-10-26 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
TW201106101A (en) * | 2009-06-01 | 2011-02-16 | Fujifilm Electronic Materials | Chemically amplified positive photoresist composition |
KR20130114095A (ko) * | 2010-09-17 | 2013-10-16 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 중합체 및 레지스트 패턴 형성 방법 |
JP5527236B2 (ja) | 2011-01-31 | 2014-06-18 | 信越化学工業株式会社 | ポジ型化学増幅レジスト材料、パターン形成方法及び酸分解性ケトエステル化合物 |
JP5229337B2 (ja) * | 2011-02-14 | 2013-07-03 | 信越化学工業株式会社 | 含窒素有機化合物 |
JP5789623B2 (ja) | 2012-03-29 | 2015-10-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びにそれを用いた感活性光線性又は感放射線性膜及びパターン形成方法 |
KR101904793B1 (ko) | 2014-09-02 | 2018-10-05 | 후지필름 가부시키가이샤 | 패턴 형성 방법, 전자 디바이스의 제조 방법 및 전자 디바이스 |
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