TWI303850B - - Google Patents
Download PDFInfo
- Publication number
- TWI303850B TWI303850B TW093124253A TW93124253A TWI303850B TW I303850 B TWI303850 B TW I303850B TW 093124253 A TW093124253 A TW 093124253A TW 93124253 A TW93124253 A TW 93124253A TW I303850 B TWI303850 B TW I303850B
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- plasma
- gas
- processed
- processing apparatus
- Prior art date
Links
- 239000007789 gas Substances 0.000 claims description 55
- 238000012545 processing Methods 0.000 claims description 48
- 238000004380 ashing Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 35
- 238000012546 transfer Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000006096 absorbing agent Substances 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- 241000736839 Chara Species 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 230000006837 decompression Effects 0.000 claims 1
- 239000000428 dust Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 41
- 238000009832 plasma treatment Methods 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 230000009849 deactivation Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000001748 luminescence spectrum Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000854291 Dianthus carthusianorum Species 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229940109275 cyclamate Drugs 0.000 description 1
- HCAJEUSONLESMK-UHFFFAOYSA-N cyclohexylsulfamic acid Chemical compound OS(=O)(=O)NC1CCCCC1 HCAJEUSONLESMK-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- -1 polyethylene benzene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3342—Resist stripping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003207379A JP2005064037A (ja) | 2003-08-12 | 2003-08-12 | プラズマ処理装置及びアッシング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200522198A TW200522198A (en) | 2005-07-01 |
| TWI303850B true TWI303850B (enExample) | 2008-12-01 |
Family
ID=34131427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093124253A TW200522198A (en) | 2003-08-12 | 2004-08-12 | Plasma treatment apparatus and ashing method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7491908B2 (enExample) |
| EP (1) | EP1655770A4 (enExample) |
| JP (1) | JP2005064037A (enExample) |
| KR (2) | KR100895253B1 (enExample) |
| CN (1) | CN100466193C (enExample) |
| TW (1) | TW200522198A (enExample) |
| WO (1) | WO2005015628A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050284573A1 (en) * | 2004-06-24 | 2005-12-29 | Egley Fred D | Bare aluminum baffles for resist stripping chambers |
| JP5236225B2 (ja) * | 2007-07-31 | 2013-07-17 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| WO2009063755A1 (ja) * | 2007-11-14 | 2009-05-22 | Tokyo Electron Limited | プラズマ処理装置および半導体基板のプラズマ処理方法 |
| US8741778B2 (en) * | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
| US10049881B2 (en) * | 2011-08-10 | 2018-08-14 | Applied Materials, Inc. | Method and apparatus for selective nitridation process |
| JP5780928B2 (ja) * | 2011-11-22 | 2015-09-16 | 株式会社アルバック | プラズマ処理装置 |
| WO2015171335A1 (en) | 2014-05-06 | 2015-11-12 | Applied Materials, Inc. | Directional treatment for multi-dimensional device processing |
| KR102301585B1 (ko) * | 2016-03-13 | 2021-09-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 선택적 건식 에칭을 위한 방법들 및 장치 |
| US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
| CN112912251A (zh) * | 2018-10-23 | 2021-06-04 | Hzo股份有限公司 | 涂覆的基板的等离子灰化 |
| WO2020205203A1 (en) * | 2019-04-05 | 2020-10-08 | Applied Materials, Inc. | Process system with variable flow valve |
| US11508573B2 (en) | 2019-12-31 | 2022-11-22 | Micron Technology, Inc. | Plasma doping of gap fill materials |
| JP7605569B2 (ja) * | 2021-07-21 | 2024-12-24 | 東京エレクトロン株式会社 | プラズマ源及びプラズマ処理装置 |
| US20230059730A1 (en) * | 2021-08-19 | 2023-02-23 | University Of Maryland, College Park | Atomic-scale materials processing based on electron beam induced etching assisted by remote plasma |
| WO2024196944A1 (en) * | 2023-03-21 | 2024-09-26 | Mks Instruments, Inc. | Real time radical output monitoring using optical emission spectroscopy |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5449073A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Plasma processing unit |
| US5441568A (en) * | 1994-07-15 | 1995-08-15 | Applied Materials, Inc. | Exhaust baffle for uniform gas flow pattern |
| JPH0945495A (ja) | 1995-08-02 | 1997-02-14 | Ulvac Japan Ltd | プラズマ処理装置 |
| US5866986A (en) * | 1996-08-05 | 1999-02-02 | Integrated Electronic Innovations, Inc. | Microwave gas phase plasma source |
| JPH10298787A (ja) * | 1997-04-25 | 1998-11-10 | Shibaura Eng Works Co Ltd | ドライエッチング装置 |
| JP3218348B2 (ja) * | 1998-05-21 | 2001-10-15 | 株式会社アルバック | プラズマアッシング方法 |
| JP2000012526A (ja) | 1998-06-25 | 2000-01-14 | Mitsubishi Electric Corp | プラズマ処理装置およびプラズマ処理方法 |
| US6383301B1 (en) * | 1998-08-04 | 2002-05-07 | E. I. Du Pont De Nemours And Company | Treatment of deagglomerated particles with plasma-activated species |
| JP2000100790A (ja) * | 1998-09-22 | 2000-04-07 | Canon Inc | プラズマ処理装置及びそれを用いた処理方法 |
| JP2000183040A (ja) * | 1998-12-15 | 2000-06-30 | Canon Inc | 有機層間絶縁膜エッチング後のレジストアッシング方法 |
| US6281135B1 (en) * | 1999-08-05 | 2001-08-28 | Axcelis Technologies, Inc. | Oxygen free plasma stripping process |
| US6287643B1 (en) * | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
| JP2001115267A (ja) * | 1999-10-19 | 2001-04-24 | Canon Inc | プラズマ処理装置及び処理方法 |
| US6426304B1 (en) * | 2000-06-30 | 2002-07-30 | Lam Research Corporation | Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications |
| JP2002075961A (ja) * | 2000-08-24 | 2002-03-15 | Toshiba Corp | 半導体装置の製造方法 |
| US7083991B2 (en) * | 2002-01-24 | 2006-08-01 | Novellus Systems, Inc. | Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments |
-
2003
- 2003-08-12 JP JP2003207379A patent/JP2005064037A/ja not_active Withdrawn
-
2004
- 2004-08-06 US US10/567,665 patent/US7491908B2/en not_active Expired - Fee Related
- 2004-08-06 EP EP04771632A patent/EP1655770A4/en not_active Withdrawn
- 2004-08-06 CN CNB2004800261699A patent/CN100466193C/zh not_active Expired - Lifetime
- 2004-08-06 KR KR1020087008103A patent/KR100895253B1/ko not_active Expired - Lifetime
- 2004-08-06 KR KR1020067002878A patent/KR100835630B1/ko not_active Expired - Lifetime
- 2004-08-06 WO PCT/JP2004/011657 patent/WO2005015628A1/ja not_active Ceased
- 2004-08-12 TW TW093124253A patent/TW200522198A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7491908B2 (en) | 2009-02-17 |
| WO2005015628A1 (ja) | 2005-02-17 |
| EP1655770A1 (en) | 2006-05-10 |
| CN1849701A (zh) | 2006-10-18 |
| CN100466193C (zh) | 2009-03-04 |
| US20070151956A1 (en) | 2007-07-05 |
| JP2005064037A (ja) | 2005-03-10 |
| KR100835630B1 (ko) | 2008-06-09 |
| KR100895253B1 (ko) | 2009-04-29 |
| KR20060038468A (ko) | 2006-05-03 |
| KR20080036157A (ko) | 2008-04-24 |
| EP1655770A4 (en) | 2009-01-14 |
| TW200522198A (en) | 2005-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI303850B (enExample) | ||
| US10121682B2 (en) | Purging of porogen from UV cure chamber | |
| US20140116335A1 (en) | UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus | |
| US10020197B2 (en) | Method for reducing porogen accumulation from a UV-cure chamber | |
| US8877659B2 (en) | Low-k dielectric damage repair by vapor-phase chemical exposure | |
| CN101960556B (zh) | 用于固化多孔低介电常数电介质膜的方法 | |
| US8883406B2 (en) | Method for using a purge ring with split baffles in photonic thermal processing systems | |
| JPH08107090A (ja) | 窒化シリコン膜の紫外線強化されたドライ・ストリッピング | |
| US8808564B2 (en) | Method and apparatus for selective nitridation process | |
| US20090093135A1 (en) | Semiconductor manufacturing apparatus and method for curing material with uv light | |
| TWI713587B (zh) | 以暴露於ｕｖ輻射之水性液體介質處理基板的方法 | |
| JP2009141028A (ja) | シャワーヘッド及びレジスト除去装置 | |
| US9502255B2 (en) | Low-k damage repair and pore sealing agents with photosensitive end groups | |
| KR102085547B1 (ko) | 손상된 저 ｋ 필름들의 기공 밀봉을 위한 uv-보조된 광화학 증기 증착법 | |
| CN101208770A (zh) | 用于处理介电材料的设备和方法 | |
| JP2008075179A (ja) | Ｕｖ照射チャンバーをクリーニングする方法 | |
| CN1976000A (zh) | 制造半导体器件的方法 | |
| WO2015083435A1 (ja) | アッシング方法およびアッシング装置 | |
| JP2012195058A (ja) | 光照射装置 | |
| JPS6320833A (ja) | アツシング装置 | |
| KR101384590B1 (ko) | 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치 | |
| JP4291193B2 (ja) | 光処理装置及び処理装置 | |
| KR940005281B1 (ko) | 반도체 기판 표면의 처리방법 | |
| JP2017168526A (ja) | エッチング装置及びエッチング方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |