KR100895253B1 - 플라즈마 처리 장치 및 에싱 방법 - Google Patents

플라즈마 처리 장치 및 에싱 방법 Download PDF

Info

Publication number
KR100895253B1
KR100895253B1 KR1020087008103A KR20087008103A KR100895253B1 KR 100895253 B1 KR100895253 B1 KR 100895253B1 KR 1020087008103 A KR1020087008103 A KR 1020087008103A KR 20087008103 A KR20087008103 A KR 20087008103A KR 100895253 B1 KR100895253 B1 KR 100895253B1
Authority
KR
South Korea
Prior art keywords
plasma
chamber
gas
plasma processing
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020087008103A
Other languages
English (en)
Korean (ko)
Other versions
KR20080036157A (ko
Inventor
요시노리 이이노
Original Assignee
시바우라 메카트로닉스 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시바우라 메카트로닉스 가부시끼가이샤 filed Critical 시바우라 메카트로닉스 가부시끼가이샤
Publication of KR20080036157A publication Critical patent/KR20080036157A/ko
Application granted granted Critical
Publication of KR100895253B1 publication Critical patent/KR100895253B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
KR1020087008103A 2003-08-12 2004-08-06 플라즈마 처리 장치 및 에싱 방법 Expired - Lifetime KR100895253B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003207379A JP2005064037A (ja) 2003-08-12 2003-08-12 プラズマ処理装置及びアッシング方法
JPJP-P-2003-00207379 2003-08-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020067002878A Division KR100835630B1 (ko) 2003-08-12 2004-08-06 플라즈마 처리 장치 및 에싱 방법

Publications (2)

Publication Number Publication Date
KR20080036157A KR20080036157A (ko) 2008-04-24
KR100895253B1 true KR100895253B1 (ko) 2009-04-29

Family

ID=34131427

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020087008103A Expired - Lifetime KR100895253B1 (ko) 2003-08-12 2004-08-06 플라즈마 처리 장치 및 에싱 방법
KR1020067002878A Expired - Lifetime KR100835630B1 (ko) 2003-08-12 2004-08-06 플라즈마 처리 장치 및 에싱 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020067002878A Expired - Lifetime KR100835630B1 (ko) 2003-08-12 2004-08-06 플라즈마 처리 장치 및 에싱 방법

Country Status (7)

Country Link
US (1) US7491908B2 (enExample)
EP (1) EP1655770A4 (enExample)
JP (1) JP2005064037A (enExample)
KR (2) KR100895253B1 (enExample)
CN (1) CN100466193C (enExample)
TW (1) TW200522198A (enExample)
WO (1) WO2005015628A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050284573A1 (en) * 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
JP5236225B2 (ja) * 2007-07-31 2013-07-17 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
WO2009063755A1 (ja) * 2007-11-14 2009-05-22 Tokyo Electron Limited プラズマ処理装置および半導体基板のプラズマ処理方法
US8741778B2 (en) * 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US10049881B2 (en) 2011-08-10 2018-08-14 Applied Materials, Inc. Method and apparatus for selective nitridation process
JP5780928B2 (ja) * 2011-11-22 2015-09-16 株式会社アルバック プラズマ処理装置
WO2015171335A1 (en) 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
CN108778739B (zh) * 2016-03-13 2021-07-16 应用材料公司 用于选择性干式蚀刻的方法及设备
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US20200126769A1 (en) * 2018-10-23 2020-04-23 Hzo, Inc. Plasma ashing of coated substrates
US20220223383A1 (en) * 2019-04-05 2022-07-14 Applied Materials, Inc. Process system with variable flow valve
US11508573B2 (en) 2019-12-31 2022-11-22 Micron Technology, Inc. Plasma doping of gap fill materials
JP7605569B2 (ja) * 2021-07-21 2024-12-24 東京エレクトロン株式会社 プラズマ源及びプラズマ処理装置
US20230059730A1 (en) * 2021-08-19 2023-02-23 University Of Maryland, College Park Atomic-scale materials processing based on electron beam induced etching assisted by remote plasma
WO2024196944A1 (en) * 2023-03-21 2024-09-26 Mks Instruments, Inc. Real time radical output monitoring using optical emission spectroscopy

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
JP2001115267A (ja) * 1999-10-19 2001-04-24 Canon Inc プラズマ処理装置及び処理方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5449073A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Plasma processing unit
JPH0945495A (ja) 1995-08-02 1997-02-14 Ulvac Japan Ltd プラズマ処理装置
US5866986A (en) * 1996-08-05 1999-02-02 Integrated Electronic Innovations, Inc. Microwave gas phase plasma source
JPH10298787A (ja) * 1997-04-25 1998-11-10 Shibaura Eng Works Co Ltd ドライエッチング装置
JP3218348B2 (ja) 1998-05-21 2001-10-15 株式会社アルバック プラズマアッシング方法
JP2000012526A (ja) 1998-06-25 2000-01-14 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
US6383301B1 (en) * 1998-08-04 2002-05-07 E. I. Du Pont De Nemours And Company Treatment of deagglomerated particles with plasma-activated species
JP2000100790A (ja) 1998-09-22 2000-04-07 Canon Inc プラズマ処理装置及びそれを用いた処理方法
JP2000183040A (ja) * 1998-12-15 2000-06-30 Canon Inc 有機層間絶縁膜エッチング後のレジストアッシング方法
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6287643B1 (en) * 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6426304B1 (en) * 2000-06-30 2002-07-30 Lam Research Corporation Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
JP2002075961A (ja) 2000-08-24 2002-03-15 Toshiba Corp 半導体装置の製造方法
US7083991B2 (en) * 2002-01-24 2006-08-01 Novellus Systems, Inc. Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
JP2001115267A (ja) * 1999-10-19 2001-04-24 Canon Inc プラズマ処理装置及び処理方法

Also Published As

Publication number Publication date
KR100835630B1 (ko) 2008-06-09
US20070151956A1 (en) 2007-07-05
CN100466193C (zh) 2009-03-04
WO2005015628A1 (ja) 2005-02-17
EP1655770A1 (en) 2006-05-10
JP2005064037A (ja) 2005-03-10
KR20060038468A (ko) 2006-05-03
US7491908B2 (en) 2009-02-17
CN1849701A (zh) 2006-10-18
TW200522198A (en) 2005-07-01
KR20080036157A (ko) 2008-04-24
TWI303850B (enExample) 2008-12-01
EP1655770A4 (en) 2009-01-14

Similar Documents

Publication Publication Date Title
KR100895253B1 (ko) 플라즈마 처리 장치 및 에싱 방법
JP3288490B2 (ja) 半導体装置の製造方法及び半導体装置の製造装置
US9443701B2 (en) Etching method
CN100466879C (zh) 中性粒子束处理设备
CN1554106A (zh) 等离子体处理中采用微射流的低能离子产生和输运方法和装置
WO2011062162A1 (ja) 試料処理装置、試料処理システム及び試料の処理方法
EP1895565A1 (en) Plasma processing apparatus and method
JP2015050362A (ja) プラズマ処理装置
KR100509387B1 (ko) 플라즈마 처리 방법
KR100887439B1 (ko) 전자 장치용 기판 및 그 처리 방법
JPH0272620A (ja) プラズマ処理装置
JP2005142234A5 (enExample)
JP7258638B2 (ja) プラズマ処理方法、金属膜の形成方法、有機膜の除去方法及びプラズマ処理装置
CN1614739A (zh) 处理装置及方法
JPH08139004A (ja) プラズマ処理装置およびプラズマ処理方法
JPH0855698A (ja) プラズマ処理装置及びプラズマ処理方法
JP3373466B2 (ja) プラズマ処理装置及びプラズマ処理方法
KR101384590B1 (ko) 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치
JP2001044175A (ja) プラズマ処理装置
JP2579346Y2 (ja) レジスト膜のアッシング装置
JPH0896990A (ja) プラズマ処理装置およびプラズマ処理方法
JPH05243138A (ja) 紫外線発生装置およびそれを用いた処理方法
JP2006012962A (ja) 斜め貫通孔付真空紫外光遮光板を用いたマイクロ波プラズマ処理装置及び処理方法
JP2791298B2 (ja) マイクロ波励起プラズマ処理装置
JP2007081341A (ja) 処理装置

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20080403

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20080516

Patent event code: PE09021S01D

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20081114

Patent event code: PE09021S02D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20090227

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20090421

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20090422

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20120216

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20130404

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20130404

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20140401

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20140401

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20160318

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20160318

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20170317

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20170317

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20200317

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20220323

Start annual number: 14

End annual number: 14

PR1001 Payment of annual fee

Payment date: 20230322

Start annual number: 15

End annual number: 15

PR1001 Payment of annual fee

Payment date: 20240320

Start annual number: 16

End annual number: 16

PC1801 Expiration of term

Termination date: 20250206

Termination category: Expiration of duration