CN100466193C - 等离子体处理装置和灰化方法 - Google Patents

等离子体处理装置和灰化方法 Download PDF

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Publication number
CN100466193C
CN100466193C CNB2004800261699A CN200480026169A CN100466193C CN 100466193 C CN100466193 C CN 100466193C CN B2004800261699 A CNB2004800261699 A CN B2004800261699A CN 200480026169 A CN200480026169 A CN 200480026169A CN 100466193 C CN100466193 C CN 100466193C
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CN
China
Prior art keywords
plasma
chamber
gas
dispatch tube
spike
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2004800261699A
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English (en)
Chinese (zh)
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CN1849701A (zh
Inventor
饭野由规
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Engineering Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Engineering Works Co Ltd filed Critical Shibaura Engineering Works Co Ltd
Publication of CN1849701A publication Critical patent/CN1849701A/zh
Application granted granted Critical
Publication of CN100466193C publication Critical patent/CN100466193C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
CNB2004800261699A 2003-08-12 2004-08-06 等离子体处理装置和灰化方法 Expired - Lifetime CN100466193C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003207379A JP2005064037A (ja) 2003-08-12 2003-08-12 プラズマ処理装置及びアッシング方法
JP207379/2003 2003-08-12

Publications (2)

Publication Number Publication Date
CN1849701A CN1849701A (zh) 2006-10-18
CN100466193C true CN100466193C (zh) 2009-03-04

Family

ID=34131427

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800261699A Expired - Lifetime CN100466193C (zh) 2003-08-12 2004-08-06 等离子体处理装置和灰化方法

Country Status (7)

Country Link
US (1) US7491908B2 (enExample)
EP (1) EP1655770A4 (enExample)
JP (1) JP2005064037A (enExample)
KR (2) KR100895253B1 (enExample)
CN (1) CN100466193C (enExample)
TW (1) TW200522198A (enExample)
WO (1) WO2005015628A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050284573A1 (en) * 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
JP5236225B2 (ja) * 2007-07-31 2013-07-17 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
WO2009063755A1 (ja) * 2007-11-14 2009-05-22 Tokyo Electron Limited プラズマ処理装置および半導体基板のプラズマ処理方法
US8741778B2 (en) * 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US10049881B2 (en) * 2011-08-10 2018-08-14 Applied Materials, Inc. Method and apparatus for selective nitridation process
JP5780928B2 (ja) * 2011-11-22 2015-09-16 株式会社アルバック プラズマ処理装置
WO2015171335A1 (en) 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
KR102301585B1 (ko) * 2016-03-13 2021-09-10 어플라이드 머티어리얼스, 인코포레이티드 선택적 건식 에칭을 위한 방법들 및 장치
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
CN112912251A (zh) * 2018-10-23 2021-06-04 Hzo股份有限公司 涂覆的基板的等离子灰化
WO2020205203A1 (en) * 2019-04-05 2020-10-08 Applied Materials, Inc. Process system with variable flow valve
US11508573B2 (en) 2019-12-31 2022-11-22 Micron Technology, Inc. Plasma doping of gap fill materials
JP7605569B2 (ja) * 2021-07-21 2024-12-24 東京エレクトロン株式会社 プラズマ源及びプラズマ処理装置
US20230059730A1 (en) * 2021-08-19 2023-02-23 University Of Maryland, College Park Atomic-scale materials processing based on electron beam induced etching assisted by remote plasma
WO2024196944A1 (en) * 2023-03-21 2024-09-26 Mks Instruments, Inc. Real time radical output monitoring using optical emission spectroscopy

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945495A (ja) * 1995-08-02 1997-02-14 Ulvac Japan Ltd プラズマ処理装置
JPH10298787A (ja) * 1997-04-25 1998-11-10 Shibaura Eng Works Co Ltd ドライエッチング装置
JPH1145873A (ja) * 1998-05-21 1999-02-16 Ulvac Japan Ltd プラズマアッシング方法
JP2001115267A (ja) * 1999-10-19 2001-04-24 Canon Inc プラズマ処理装置及び処理方法
JP2002075961A (ja) * 2000-08-24 2002-03-15 Toshiba Corp 半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5449073A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Plasma processing unit
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
US5866986A (en) * 1996-08-05 1999-02-02 Integrated Electronic Innovations, Inc. Microwave gas phase plasma source
JP2000012526A (ja) 1998-06-25 2000-01-14 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
US6383301B1 (en) * 1998-08-04 2002-05-07 E. I. Du Pont De Nemours And Company Treatment of deagglomerated particles with plasma-activated species
JP2000100790A (ja) * 1998-09-22 2000-04-07 Canon Inc プラズマ処理装置及びそれを用いた処理方法
JP2000183040A (ja) * 1998-12-15 2000-06-30 Canon Inc 有機層間絶縁膜エッチング後のレジストアッシング方法
US6281135B1 (en) * 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6287643B1 (en) * 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6426304B1 (en) * 2000-06-30 2002-07-30 Lam Research Corporation Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
US7083991B2 (en) * 2002-01-24 2006-08-01 Novellus Systems, Inc. Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945495A (ja) * 1995-08-02 1997-02-14 Ulvac Japan Ltd プラズマ処理装置
JPH10298787A (ja) * 1997-04-25 1998-11-10 Shibaura Eng Works Co Ltd ドライエッチング装置
JPH1145873A (ja) * 1998-05-21 1999-02-16 Ulvac Japan Ltd プラズマアッシング方法
JP2001115267A (ja) * 1999-10-19 2001-04-24 Canon Inc プラズマ処理装置及び処理方法
JP2002075961A (ja) * 2000-08-24 2002-03-15 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
TWI303850B (enExample) 2008-12-01
US7491908B2 (en) 2009-02-17
WO2005015628A1 (ja) 2005-02-17
EP1655770A1 (en) 2006-05-10
CN1849701A (zh) 2006-10-18
US20070151956A1 (en) 2007-07-05
JP2005064037A (ja) 2005-03-10
KR100835630B1 (ko) 2008-06-09
KR100895253B1 (ko) 2009-04-29
KR20060038468A (ko) 2006-05-03
KR20080036157A (ko) 2008-04-24
EP1655770A4 (en) 2009-01-14
TW200522198A (en) 2005-07-01

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Granted publication date: 20090304