TWI299902B - Image sensor with compact pixel layout - Google Patents

Image sensor with compact pixel layout Download PDF

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Publication number
TWI299902B
TWI299902B TW094138646A TW94138646A TWI299902B TW I299902 B TWI299902 B TW I299902B TW 094138646 A TW094138646 A TW 094138646A TW 94138646 A TW94138646 A TW 94138646A TW I299902 B TWI299902 B TW I299902B
Authority
TW
Taiwan
Prior art keywords
transistor
image sensor
region
active region
active
Prior art date
Application number
TW094138646A
Other languages
English (en)
Chinese (zh)
Other versions
TW200644228A (en
Inventor
Jaroslav Hynecek
Original Assignee
Magnachip Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Magnachip Semiconductor Ltd filed Critical Magnachip Semiconductor Ltd
Publication of TW200644228A publication Critical patent/TW200644228A/zh
Application granted granted Critical
Publication of TWI299902B publication Critical patent/TWI299902B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW094138646A 2005-06-15 2005-11-03 Image sensor with compact pixel layout TWI299902B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050051555A KR100718781B1 (ko) 2005-06-15 2005-06-15 콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서

Publications (2)

Publication Number Publication Date
TW200644228A TW200644228A (en) 2006-12-16
TWI299902B true TWI299902B (en) 2008-08-11

Family

ID=37519706

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094138646A TWI299902B (en) 2005-06-15 2005-11-03 Image sensor with compact pixel layout

Country Status (5)

Country Link
US (3) US7700950B2 (enExample)
JP (2) JP5183875B2 (enExample)
KR (1) KR100718781B1 (enExample)
CN (1) CN100492649C (enExample)
TW (1) TWI299902B (enExample)

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Also Published As

Publication number Publication date
US20120007157A1 (en) 2012-01-12
JP5486639B2 (ja) 2014-05-07
TW200644228A (en) 2006-12-16
CN1881599A (zh) 2006-12-20
JP2006352070A (ja) 2006-12-28
KR100718781B1 (ko) 2007-05-16
KR20060131265A (ko) 2006-12-20
US20100171157A1 (en) 2010-07-08
US20060284177A1 (en) 2006-12-21
US8217437B2 (en) 2012-07-10
US8044446B2 (en) 2011-10-25
CN100492649C (zh) 2009-05-27
JP5183875B2 (ja) 2013-04-17
JP2012199581A (ja) 2012-10-18
US7700950B2 (en) 2010-04-20

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