JP5183875B2 - コンパクトなピクセルレイアウトを有するｃｍｏｓイメージセンサ - Google Patents

コンパクトなピクセルレイアウトを有するｃｍｏｓイメージセンサ Download PDF

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JP5183875B2
JP5183875B2 JP2006017038A JP2006017038A JP5183875B2 JP 5183875 B2 JP5183875 B2 JP 5183875B2 JP 2006017038 A JP2006017038 A JP 2006017038A JP 2006017038 A JP2006017038 A JP 2006017038A JP 5183875 B2 JP5183875 B2 JP 5183875B2
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image sensor
region
transistor
active region
pixel
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JP2006352070A (ja
JP2006352070A5 (enExample
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ハイネセク ヤロスラフ
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インテレクチュアル・ヴェンチャーズ・Ｉｉ・リミテッド・ライアビリティ・カンパニー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2006017038A 2005-06-15 2006-01-26 コンパクトなピクセルレイアウトを有するｃｍｏｓイメージセンサ Active JP5183875B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2005-0051555 2005-06-15
KR1020050051555A KR100718781B1 (ko) 2005-06-15 2005-06-15 콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서

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JP2012129174A Division JP5486639B2 (ja) 2005-06-15 2012-06-06 イメージセンサに関する方法

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JP2006352070A JP2006352070A (ja) 2006-12-28
JP2006352070A5 JP2006352070A5 (enExample) 2012-03-08
JP5183875B2 true JP5183875B2 (ja) 2013-04-17

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JP2012129174A Active JP5486639B2 (ja) 2005-06-15 2012-06-06 イメージセンサに関する方法

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US (3) US7700950B2 (enExample)
JP (2) JP5183875B2 (enExample)
KR (1) KR100718781B1 (enExample)
CN (1) CN100492649C (enExample)
TW (1) TWI299902B (enExample)

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US9190435B2 (en) * 2014-03-09 2015-11-17 Himax Imaging Limited Shared active pixel sensor
KR102366416B1 (ko) 2014-08-11 2022-02-23 삼성전자주식회사 Cmos 이미지 센서
JP6213743B2 (ja) * 2014-10-08 2017-10-18 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
KR101908286B1 (ko) * 2017-02-23 2018-10-16 (주)멜파스 커패시턴스 검출 방법 및 이를 이용하는 커패시턴스 검출 장치
KR102651393B1 (ko) * 2019-04-05 2024-03-27 에스케이하이닉스 주식회사 쉴딩 배선을 갖는 이미지 센서
KR20200118723A (ko) * 2019-04-08 2020-10-16 삼성전자주식회사 픽셀 그룹들을 포함하는 이미지 센서 및 이를 포함하는 전자 장치
CN113629090B (zh) * 2021-08-17 2024-10-15 思特威(上海)电子科技股份有限公司 一种像素、图像传感器及其制备方法、图像采集装置

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Also Published As

Publication number Publication date
US20120007157A1 (en) 2012-01-12
JP5486639B2 (ja) 2014-05-07
TW200644228A (en) 2006-12-16
CN1881599A (zh) 2006-12-20
JP2006352070A (ja) 2006-12-28
KR100718781B1 (ko) 2007-05-16
KR20060131265A (ko) 2006-12-20
US20100171157A1 (en) 2010-07-08
US20060284177A1 (en) 2006-12-21
US8217437B2 (en) 2012-07-10
US8044446B2 (en) 2011-10-25
CN100492649C (zh) 2009-05-27
JP2012199581A (ja) 2012-10-18
TWI299902B (en) 2008-08-11
US7700950B2 (en) 2010-04-20

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