486816 4624twf . doc/002 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（/ ) 本發明是有關於一種影像感測器（image sensor)的結構 及其製造方法，且特別是有關於一種提高影像感測器對藍 光的頻率響應的影像感測器的結構及其製造方法。 習知用於影像擷取之數位（digital)感測器常使用電荷耦 合元件（charge coupled device; CCD)，其應用方面包括監 視窃、攝彭機、照相機等，然而CCD的成本昂貴，而且 其體積無法有效的縮小。爲了因應目前小型化體積、低能 量和低成本的要求，因此發展出一種互補式金氧半導體光 二極體（photo diode)元件，以應用既有的半導體製程技術， 來降低生產的成本，並減小感測器的體積，而且互補式金 氧半導體又有低能量的優點，因此爲目前發展的趨勢。此 種互補式金氧半導體感光二極體元件更應用至PC照相機 (PC camera)、數位式照相機（digitai camera)等。 光一極體係利用P-N接合（P-N junction)，將光能變換 爲電器ί曰5虎的半導體受光兀件（或稱爲光偵檢元件）。當沒 有光照射之狀態時，因爲Ρ-Ν接合內部有電場存在，Ν層 中的電子或Ρ層中的電洞，不會向相對層擴散。當具有足 夠能量的光入射時，因爲光能的激發而產生電子-電洞對， 兩者均擴散到接合部。當到達接合部以後，由於所存在的 內部電場的作用，電子向Ν側且電洞向ρ側分離，進而蓄 積，使Ρ-Ν接合電極間發生電流。理想上，光二極體在黑 暗中的作用相當於開放電路（open circuit)，亦即沒有光電 流的產生。 第1圖繪示爲習知的一種互補式金氧半導體感測器的 閱 讀， .背 意 事 項 再486816 4624twf.doc / 002 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (/) The present invention relates to the structure of an image sensor and its manufacturing method, and in particular The invention relates to a structure of an image sensor for improving the frequency response of the image sensor to blue light and a manufacturing method thereof. Known digital sensors used for image capture often use charge coupled devices (CCDs), and their applications include surveillance, cameras, cameras, etc. However, CCDs are expensive and their The volume cannot be effectively reduced. In order to meet the requirements of current miniaturization volume, low energy and low cost, a complementary metal-oxide-semiconductor photo diode device has been developed to use the existing semiconductor process technology to reduce production costs and reduce The small size of the sensor, and the complementary metal-oxide semiconductor has the advantage of low energy, so it is the current development trend. Such a complementary metal-oxide semiconductor photodiode element is further applied to a PC camera, a digitai camera, and the like. The photo-polar system uses a P-N junction to convert light energy into a semiconductor light-receiving element (also known as a light detection element). When there is no light irradiation, because there is an electric field inside the P-N junction, the electrons in the N layer or the holes in the P layer will not diffuse to the opposite layer. When light with sufficient energy is incident, an electron-hole pair is generated due to the excitation of the light energy, and both diffuse to the junction. After reaching the junction, due to the effect of the internal electric field, the electrons are separated toward the N side and the holes are separated toward the ρ side, and then accumulated, causing a current to flow between the P-N junction electrodes. Ideally, the role of a photodiode in darkness is equivalent to an open circuit, that is, no photoelectric current is generated. Figure 1 shows the reading of a conventional complementary metal-oxide-semiconductor sensor.
訂 線 486816 4624twf . doc/ 002 A7 B7 五、發明説明（二） 結構剖，面圖。圖中標號1〇〇代表P型半導體基底、.104表 示場氧化層、Π0表示P井、120表示閘極結構、丨22表示 N型源極/汲極區、124表示N型感測區、126表示空乏區、 .Π1表示硼磷矽化玻璃/氮矽玻璃介電護層。 由於空乏區126係爲P-N接合面，因此入射光線140 通過使空乏區126時，會使此空乏區126被激發產生電洞 -電子對，因而將入射光140的訊號轉換成電流的訊號。 在使用金氧半導體作爲影像感測器的技術中，較難克 服的問題包括不同波長的光線是否具有足夠的穿透率入射 到半導體基底的高電場空乏區，而使空乏區因光能的激發 產生電子-電洞對，進而使本質空乏區間發生電流。一般 光二極體元件的空乏區遠離基底表面，由於入射光中的藍 光波長較短，約爲460nm左右，因此大部分的藍光無法入 射達到空乏區，而使得光二極體元件對於藍光的響應較 差。 經濟部智慧財產局員工消費合作社印製 此外，影像感測器係採用金氧半電晶體的製程，以閘 極一側的摻雜區作爲光感測區，其摻雜步驟與源極V汲極 區同時進行，因此通常也具備有與源極/汲極區的摻質與 濃度，源極/汲極區包括濃摻雜與淡摻雜兩個區域，濃摻 雑通1%是以80Kev的能量，植入劑量爲1 χ 1 〇15原子/平方 公分的砷（As)，而淡摻雜區則是以40Kev的能量，植入劑 量爲1 xlO13原子/平方公分的磷形成，砷具有較大的原子 量’在摻雜時往往會對光感測區造成較大的傷害，因此容 易造成漏電流。 1 本紙張尺度適用中國國家榡準（CNS ) Α1規格（210X 297公釐） 486816 五、發明説明（< ) 因此，本發明提供一種影像感測器的結構及其製造方 法，將金氧半電晶體源極/汲極區的形成步驟與感測區的 形成步驟分離，避免源極/汲極區的濃度高且較具破壞性 的砷會在摻雜步驟植入光感測區中。 首先，提供一個半導體基底，在其上形成並定義出閘 極氧化層與閘極結構，接著進行第一道植入步驟，在閘極 兩側的半導體基底中形成淺的第一摻雜區，閘極一側的第 一摻雜區爲源極/汲極區的所在區域，而另一側則爲光感 測區的所在區域。在閘極側壁形成間隙壁，之後提供第一 罩幕覆蓋大部分的半導體基底，僅暴露出部分欲形成光感‘ 測區的半導體基底，進行第二道植入步驟，以在光感測區 中形成分布較第一摻雜區爲深的第二摻摻雜區，用以增加< 光感測區對綠光與紅光的頻率響應。之後，去除第一罩幕， 進行覆蓋第二罩幕，暴露出位於閘極另一側，用以形成源 極/汲極區的半導體基底，進行第三道植入步驟，以形成 源極/汲極區中的第二摻雜區，此第二摻雜區與第一摻雜 區組合形成具有輕摻雜汲極區（LDD)的源極/汲極區。 利用本發明提供的影像感測器的結構與製造方法，在 提供的半導體基底上覆蓋一層罩幕，暴露出光感測區的區 域，在光感測區中全面植入形成一個分布較淺的第一摻雜 區，之後在光感測區中定義並植入一個分布較深的第二摻 雜區。其中，淺的第一摻雜區有利於藍光的響應，深的第 二摻雜區則有利於紅光與綠光的響應，且第一摻雜區與第 二摻雜區所用的摻質均爲磷，而不使用砷以避免因爲摻雜 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (閱讀背面之注意事項再填寫本頁)Order line 486816 4624twf.doc / 002 A7 B7 V. Description of the invention (II) Structural section, surface view. In the figure, reference numeral 100 indicates a P-type semiconductor substrate, .104 indicates a field oxide layer, Π0 indicates a P well, 120 indicates a gate structure, 22 indicates an N-type source / drain region, 124 indicates an N-type sensing region, 126 indicates the empty region and .Π1 indicates the borophosphosilicate glass / nitrogen silicate glass dielectric coating. Since the empty region 126 is a P-N junction surface, when the incident light 140 passes through the empty region 126, the empty region 126 will be excited to generate a hole-electron pair, thereby converting the signal of the incident light 140 into a current signal. In the technology using metal-oxide semiconductors as image sensors, the more difficult problems to overcome include whether different wavelengths of light have sufficient transmittance to enter the high-electric field empty regions of the semiconductor substrate, and the empty regions are excited by light energy. Electron-hole pairs are generated, which in turn causes current to flow in the essentially empty section. Generally, the empty region of the photodiode element is far away from the substrate surface. Since the wavelength of blue light in the incident light is short, about 460nm, most of the blue light cannot be incident to the empty region, which makes the photodiode element respond poorly to blue light. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition, the image sensor uses a process of gold-oxygen semi-transistor. The doped region on the gate side is used as the light sensing region. The polar region is performed at the same time, so it usually also has the dopant and concentration with the source / drain region. The source / drain region includes two regions: heavily doped and lightly doped. Of arsenic (As) at an implantation dose of 1 x 1 015 atoms / cm 2, while the lightly doped region is formed with 40 Kev of energy and an implantation dose of 1 x 10 13 atoms / cm 2 phosphorus. Arsenic has A larger atomic weight 'will often cause greater damage to the light sensing region when doped, and therefore easily cause leakage current. 1 This paper size is applicable to China National Standard (CNS) A1 specification (210X 297 mm) 486816 V. Description of the invention (<) Therefore, the present invention provides a structure of an image sensor and a method for manufacturing the same. The step of forming the source / drain region of the transistor is separated from the step of forming the sensing region, so as to avoid the high concentration and destructive arsenic in the source / drain region from being implanted into the light sensing region during the doping step. First, a semiconductor substrate is provided, on which a gate oxide layer and a gate structure are formed and defined, and then a first implantation step is performed to form a shallow first doped region in the semiconductor substrate on both sides of the gate. The first doped region on one side of the gate is the region where the source / drain region is located, and the other side is the region where the light sensing region is located. A gap wall is formed on the side wall of the gate, and then a first cover is provided to cover most of the semiconductor substrate, and only a part of the semiconductor substrate to be formed with a light sensing area is exposed, and a second implantation step is performed to place the light sensing area in the light sensing area. A second doped region with a deeper distribution than the first doped region is formed in the center to increase the frequency response of the < light sensing region to green and red light. After that, the first mask is removed, the second mask is covered, and the semiconductor substrate on the other side of the gate for forming the source / drain region is exposed, and a third implantation step is performed to form the source / A second doped region in the drain region, which is combined with the first doped region to form a source / drain region with a lightly doped drain region (LDD). By using the structure and manufacturing method of the image sensor provided by the present invention, a layer of mask is covered on the provided semiconductor substrate, and the area of the light sensing area is exposed, and a lightly distributed first part is implanted in the light sensing area. A doped region is defined and implanted with a deeper second doped region in the light sensing region. Among them, the shallow first doped region is favorable for the response of blue light, the deep second doped region is favorable for the response of red light and green light, and the dopants used in the first and second doped regions are uniform. Phosphorous instead of arsenic to avoid doping due to doping. This paper applies Chinese National Standard (CNS) A4 specification (210X 297 mm) (read the notes on the back and fill in this page)
、1T 經濟部智慧財產局員工消費合作社印製 486816 五、發明説明（（/:) 重的原子對光感測區造成的損傷。 (請先閱讀背面之注意事項再填寫本頁) 此外，本發明提供的方法在源極/汲極區所在區域的第 二摻雜區的形成步驟，與在光感測區的所在區域形成第二 摻雜區的步驟順序可以互相調換，目的在於將高濃度的源 極/汲極區與具有低濃度的光感測區分開進行植入步驟， 如此源極/汲極區可利用高能量植入劑量高的砷，以維持 源極/汲極區所要求的電性，而在光感測區可以利用磷取 代砷進行植入，以避開砷對光感測區造成的損傷。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 圖式之簡單說明： 第1圖繪示爲習知的一種互補式金氧半導體感測器的 結構剖面圖； 第2A圖至第2E圖繪示依照本發明一較佳實施例的影 像感測器的製造流程剖面圖；以及 第3圖繪示爲第2E圖所示的光感測區之佈局上視圖。 圖示標記說明= 經濟部智慧財產局員工消費合作社印製 100,200 半導體基底 104,202 場氧化層 1 10 P 井 120,206 閘極結構 122 源極/汲極區 124 感測區 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X297公釐） 486816 經濟部智慧財產局員工消費合作社印製 五、發明説明（y) 126 空乏區 134 介電層 140 入射光 2〇la 欲形成光感測區的區域 201b 欲形成源極/汲極區的區域 204 閘極氧化層 208a，208b第一摻雜區 210 間隙壁 212,218 罩幕 214,220 罩幕上的開口 ^2,13植入步驟 216 第二摻雜區 222 第三摻雜區 300 調整電晶體 實施例 第2A圖至第2E圖繪示依照本發明一較佳實施例的影 像感測器的製造流程剖面圖。 請參照第2A圖，首先提供半導體基底200，此半導體 基底200可區分爲兩個區域，一個區域爲預定形成光感測 區的半導體基底201a，另一個則爲預定形成源極/汲極區 之半導體基底201b。在半導體基底200上已定義形成一層 閘極氧化層204與一層閘極電極206，以及用以區隔元件 區的隔離結構202，比如場氧化層。其中，圖中繪示的閘 極電極206雖然爲單層結構，但在實際運用時，爲了增加 7 (請先閱讀背面之注意事項再填寫本頁) 、τ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） 486816 4624twf.doc/002 A7 B7 五 經濟部智慧財產局員工消費合作社印製 發明説明 導電性降低阻値，閘極電極可能爲多層導電材料組合而 成，比如一層多晶矽層與一層矽化鎢層。 進行一道離子植入步驟I,，在閘極電極206兩側的半 導體基底200中全面的形成第一摻雜區208a與208b，其 中第一摻雜區208a係位於欲形成光感測區的半導體基底 201a中，而第一摻雜區208b則位於欲形成源極/汲極區的 半導體基底201b中。離子植入步驟I,所用之摻質比如爲 磷，植入的能量約爲40Kev，植入的劑量約爲1 X 1 013原子 /平方公分，目的在半導體基底200中形成分布淺的摻雜 區 208a 與 208b 。 請參照第2B圖，在閘極電極206的側壁上形成間隙 壁210。接著提供罩幕212覆蓋在半導體基底200上，罩 幕212上具有開口 214暴露出欲形成光感測區的半導體基 底201a上的部分第一摻雜區208a。 請參照第2C圖，進行離子植入步驟12，在暴露出來 欲形成光感測區的半導體基底201a中形成第二摻雜區 216 ◦其中離子植入步驟12所用之摻質比如爲磷，植入的 能量約爲70Kev，植入的劑量約爲lxlO13原子/平方公分， 目的在半導體基底200欲形成光感測區的區域201a中形 成分布較第一摻雜區208a深的第二摻雜區216。第一摻雜 區208a與第二摻雜區216組合形成具有鋸齒狀輪廓的光 感測區，第一摻雜區208a分布在較淺的半導體基底200 中，用以增加光感測區對於藍光的頻率響應，而第二摻雜 區216分布在較深的半導體基底200中，用以增加光感測 讀· 閱 讀 r 意 事 項 再 訂 線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 486816 4624twf.doc/002 A7 B7 五、發明説明Η ) 區對於紅光與綠光的頻率響應。 請參照第2D圖，去除罩幕212，再提供另一罩幕218 覆盖半導體基底2 0 0，罩幕2 1 8上具有開口 2 2 0，暴露出 半導體基底200欲形成源極/汲極區的區域201b。進行離 .子植入步驟13，以在欲形成源極/汲極區的部分201b形成 第二摻雜區222 ◦離子植入步驟13所用之摻質比如爲砷， 植入的能量約爲80Kev，植入的劑量約爲lxlO15原子/平 方公分’目的在形成具有濃摻雜且導電性佳的第二摻雜區 222 ◦在欲形成源極/汲極區的區域201b中的第一摻雜區 208b係用以作爲源極/汲極區的輕摻雜汲極區（LDD)，與第 二摻雜區2D組合形成源極/汲極區。 之後，將罩幕218去除，即形成如第2E圖所示的結 構，在源極/汲極區的部分201b，是具有高濃度的砷摻質 的第二摻雜區222，以維持源極/汲極區的導電性；而在光 感測區的所在區域201a，第一摻雜區208a與第二摻雜區 216均具有磷的摻雜，避免使用砷的植入，以防止砷在植 入步驟進行時對半導體基底200表面產生損害，導致光感 測區漏電或因而效能降低的情況發生，且光感測區具有深 淺不同的接合輪廓，分別適用於增加光感測區對於藍光， 以及綠光/紅光的頻率響應。 此外，請參照第3圖，其繪示爲第2E圖的光感測區 所在區域201a的半導體基底之佈局上視圖。由此上視圖 來看，光感測區包括互相交錯分布的第一摻雜區208a與 第二摻雜區216。 9 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ·---：------1 (請先閱讀背面之注意事項再填寫本頁)， 1T printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 486816 V. Description of the invention ((/ :) Damage caused by heavy atoms to the light sensing area. (Please read the precautions on the back before filling this page) In addition, this In the method provided by the invention, the formation order of the second doped region in the region where the source / drain region is located, and the order of the steps of forming the second doped region in the region where the light sensing region is located can be interchanged with each other, in order to change the concentration The source / drain region is implanted separately from the light-sensing region with a low concentration, so that the source / drain region can use high energy to implant a high dose of arsenic to maintain the source / drain region requirements In order to avoid the damage caused by arsenic to the light-sensing area, phosphorus can be implanted in the light-sensing area. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, A preferred embodiment is described below in detail with the accompanying drawings as follows: Brief description of the drawings: FIG. 1 is a cross-sectional view showing a structure of a conventional complementary metal-oxide semiconductor sensor; Figures 2A to 2E show A cross-sectional view of the manufacturing process of the image sensor according to a preferred embodiment of the present invention; and FIG. 3 is a top view of the layout of the light sensing area shown in FIG. 2E. Printed by employee consumer cooperatives 100,200 Semiconductor substrate 104,202 Field oxide layer 1 10 P well 120,206 Gate structure 122 Source / drain region 124 Sensing area This paper size applies to China National Standard (CNS) A4 specification (210 X297 mm) 486816 Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (y) 126 Empty area 134 Dielectric layer 140 Incident light 20a Area where the light sensing area is to be formed 201b Area where the source / drain area is to be formed 204 Gate oxide layer 208a, 208b first doped region 210 spacer wall 212,218 mask 214,220 opening on the mask ^ 2,13 implantation step 216 second doped region 222 third doped region 300 adjusting transistor 2A to 2E show cross-sectional views of a manufacturing process of an image sensor according to a preferred embodiment of the present invention. Referring to FIG. 2A, a semiconductor substrate 200 is first provided, and the semiconductor substrate 200 can be divided into two Area, one area is a semiconductor substrate 201a that is intended to form a light sensing area, and the other is a semiconductor substrate 201b that is intended to form a source / drain area. A gate oxide layer 204 and a gate are defined on the semiconductor substrate 200 The electrode 206 and the isolation structure 202, such as a field oxide layer, used to separate the element region. The gate electrode 206 shown in the figure is a single-layer structure, but in practice, in order to increase 7 (please first Read the notes on the back and fill in this page), τ This paper size applies the Chinese National Standard (CNS) Α4 size (210X 297 mm) 486816 4624twf.doc / 002 A7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs It shows that the conductivity is reduced, and the gate electrode may be a combination of multiple conductive materials, such as a polycrystalline silicon layer and a tungsten silicide layer. After performing an ion implantation step I, first doped regions 208a and 208b are formed in the semiconductor substrate 200 on both sides of the gate electrode 206, wherein the first doped region 208a is a semiconductor located in the light sensing region to be formed. In the substrate 201a, the first doped region 208b is located in the semiconductor substrate 201b where a source / drain region is to be formed. In the ion implantation step I, the dopant used is, for example, phosphorus, the implantation energy is about 40 Kev, and the implantation dose is about 1 X 1 013 atoms / cm 2. The purpose is to form a shallowly distributed doped region in the semiconductor substrate 200. 208a and 208b. Referring to FIG. 2B, a gap wall 210 is formed on a side wall of the gate electrode 206. Then, a mask 212 is provided to cover the semiconductor substrate 200, and the mask 212 has an opening 214 to expose a portion of the first doped region 208a on the semiconductor substrate 201a where the light sensing region is to be formed. Referring to FIG. 2C, an ion implantation step 12 is performed, and a second doped region 216 is formed in the semiconductor substrate 201a where the photo-sensing region is to be formed. ◦ The dopant used in the ion implantation step 12 is, for example, phosphorus. The implanted energy is about 70 Kev, and the implanted dose is about 1 × 10 13 atoms / cm 2. The purpose is to form a second doped region deeper than the first doped region 208 a in the region 201 a of the semiconductor substrate 200 where the light sensing region is to be formed. 216. The first doped region 208a and the second doped region 216 are combined to form a light-sensing region with a sawtooth-shaped profile. The first doped region 208a is distributed in a shallower semiconductor substrate 200 to increase the light-sensing region for blue light. Frequency response, and the second doped region 216 is distributed in the deeper semiconductor substrate 200 to increase the light sensing reading and reading. Note Re-ordering This paper size is applicable to China National Standard (CNS) A4 specifications (210X 297 (Mm) 486816 4624twf.doc / 002 A7 B7 V. Description of the invention)) The frequency response of the zone to red and green light. Referring to FIG. 2D, the mask 212 is removed, and another mask 218 is provided to cover the semiconductor substrate 2 0 0. The mask 2 1 8 has an opening 2 2 0, exposing the semiconductor substrate 200 to form a source / drain region. Area 201b. The ion implantation step 13 is performed to form a second doped region 222 in the portion 201b where the source / drain region is to be formed. ◦ The dopant used in the ion implantation step 13 is arsenic, and the implantation energy is about 80 Kev. The implanted dose is about lxlO15 atoms / cm2 'for the purpose of forming a second doped region 222 with a strong doping and good conductivity. ◦ The first doping in the region 201b where the source / drain region is to be formed. The region 208b is a lightly doped drain region (LDD) used as a source / drain region, and is combined with the second doped region 2D to form a source / drain region. After that, the mask 218 is removed to form a structure as shown in FIG. 2E. In the portion 201b of the source / drain region, there is a second doped region 222 with a high concentration of arsenic dopant to maintain the source. / Drain region conductivity; and in the region 201a where the light sensing region is located, the first doped region 208a and the second doped region 216 are doped with phosphorus, avoiding the use of arsenic implantation to prevent arsenic from When the implantation step is performed, damage to the surface of the semiconductor substrate 200 results in leakage of the light-sensing area or a decrease in efficiency, and the light-sensing area has different depths of bonding profiles, which are respectively suitable for increasing the light-sensing area for blue light. And the frequency response of green / red light. In addition, please refer to FIG. 3, which is a top view of the layout of the semiconductor substrate in the region 201a where the light sensing region of FIG. 2E is located. From the above view, the light sensing region includes a first doped region 208a and a second doped region 216 that are staggered with each other. 9 This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) · ---: ------ 1 (Please read the precautions on the back before filling this page)
、1T -線 經濟部智慧財產局員工消費合作社印製 486816 4e24twf.doc/〇〇2 B7 ___ — ------------ ' ---—-- '一 五、發明説明（g ) 値得注意的是’本發明的提供的方法係將金氧半電晶 體中形成光感測區與形成源極/汲極區的步驟分離’與習 知同時形成光感測區與源極/汲極區的製程不同’如此可 以製作深淺接合不同的光感測區，以分別增加對藍光或對 .綠/紅光的頻率響應’且可避免植入源極/汲極的摻質砷進 入光感測區中。 上述的實施例的製程步驟雖然是先覆蓋欲形成源極/汲 極區的半導體基底’而進行第二道離子植入步驟，以完成 光感測區的摻雜’之後在覆蓋光感測區所在的半導體基 底，而進彳了第二道離子植入步驟以完成源極/汲極區的|參 雜；但是形成源極/汲極區與形成光感測區的定義與離子 植入步驟順序實際上是可以相互對調的，並不限定於上述 實施例所敘述的步驟’只要達成將光感測區與源極/汲極 區的形成分別製作即可。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 丨U---：------裝·!1 (t先閱讀背面之注意事項再填寫本頁) 、11 線 經濟部智慧財產局員工消費合作社印製 I 0 本紙張尺度適用中國國家"5^( CNS ) 21〇χ 297公餐)、 1T-Printed by the Consumers 'Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 486816 4e24twf.doc / 〇〇2 B7 ___ — ------------' ------ --- --- --- 5. Description of the invention (G) It should be noted that the method provided by the present invention is to separate the steps of forming a light-sensing region from a source / drain region in a gold-oxygen semi-electric crystal, and to form a light-sensing region at the same time as the conventional method. The source / drain regions have different processes 'so that different light-sensing regions can be fabricated with different depths and shades to increase the frequency response to blue light or green light to red light' and avoid the implantation of source / drain Arsenic enters the light sensing area. Although the process steps of the above embodiments cover the semiconductor substrate to be formed with the source / drain region first, and then perform the second ion implantation step to complete the doping of the light sensing region, and then cover the light sensing region The semiconductor substrate is located, and a second ion implantation step is performed to complete the source / drain region; but the definition of the source / drain region and the formation of the light sensing region and the ion implantation step The order can actually be reversed with each other, and is not limited to the steps described in the above embodiments, as long as the formation of the light sensing region and the source / drain region are separately made. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.丨 U ---: ------ install · 1 (t read the precautions on the back before filling in this page), 11 printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs I 0 This paper size applies to China " 5 ^ (CNS) 21〇χ 297 public meal)