CN100492649C - 具有紧凑像素布局的图像传感器 - Google Patents

具有紧凑像素布局的图像传感器 Download PDF

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Publication number
CN100492649C
CN100492649C CNB2005101260473A CN200510126047A CN100492649C CN 100492649 C CN100492649 C CN 100492649C CN B2005101260473 A CNB2005101260473 A CN B2005101260473A CN 200510126047 A CN200510126047 A CN 200510126047A CN 100492649 C CN100492649 C CN 100492649C
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China
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active area
imageing sensor
driving transistors
transistor
drain region
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Expired - Lifetime
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CNB2005101260473A
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Chinese (zh)
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CN1881599A (zh
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雅罗斯拉夫·希内切克
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Intellectual Ventures II LLC
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MagnaChip Semiconductor Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNB2005101260473A 2005-06-15 2005-11-24 具有紧凑像素布局的图像传感器 Expired - Lifetime CN100492649C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050051555 2005-06-15
KR1020050051555A KR100718781B1 (ko) 2005-06-15 2005-06-15 콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서

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CN1881599A CN1881599A (zh) 2006-12-20
CN100492649C true CN100492649C (zh) 2009-05-27

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US (3) US7700950B2 (enExample)
JP (2) JP5183875B2 (enExample)
KR (1) KR100718781B1 (enExample)
CN (1) CN100492649C (enExample)
TW (1) TWI299902B (enExample)

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KR102651393B1 (ko) * 2019-04-05 2024-03-27 에스케이하이닉스 주식회사 쉴딩 배선을 갖는 이미지 센서
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CN113629090B (zh) * 2021-08-17 2024-10-15 思特威(上海)电子科技股份有限公司 一种像素、图像传感器及其制备方法、图像采集装置

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Also Published As

Publication number Publication date
KR20060131265A (ko) 2006-12-20
KR100718781B1 (ko) 2007-05-16
TWI299902B (en) 2008-08-11
US7700950B2 (en) 2010-04-20
US20060284177A1 (en) 2006-12-21
US20120007157A1 (en) 2012-01-12
JP2006352070A (ja) 2006-12-28
JP2012199581A (ja) 2012-10-18
CN1881599A (zh) 2006-12-20
TW200644228A (en) 2006-12-16
JP5183875B2 (ja) 2013-04-17
JP5486639B2 (ja) 2014-05-07
US8217437B2 (en) 2012-07-10
US8044446B2 (en) 2011-10-25
US20100171157A1 (en) 2010-07-08

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