TWI292441B - - Google Patents

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Publication number
TWI292441B
TWI292441B TW091136459A TW91136459A TWI292441B TW I292441 B TWI292441 B TW I292441B TW 091136459 A TW091136459 A TW 091136459A TW 91136459 A TW91136459 A TW 91136459A TW I292441 B TWI292441 B TW I292441B
Authority
TW
Taiwan
Prior art keywords
substrate
plasma
treatment
substrate processing
processing
Prior art date
Application number
TW091136459A
Other languages
English (en)
Chinese (zh)
Other versions
TW200301311A (en
Inventor
Takuya Sugawara
Seiji Matsuyama
Masaru Sasaki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200301311A publication Critical patent/TW200301311A/zh
Application granted granted Critical
Publication of TWI292441B publication Critical patent/TWI292441B/zh

Links

Classifications

    • H10D64/01344—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW091136459A 2001-12-18 2002-12-17 Method for processing substrates TW200301311A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001385108A JP4048048B2 (ja) 2001-12-18 2001-12-18 基板処理方法

Publications (2)

Publication Number Publication Date
TW200301311A TW200301311A (en) 2003-07-01
TWI292441B true TWI292441B (cg-RX-API-DMAC10.html) 2008-01-11

Family

ID=19187790

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091136459A TW200301311A (en) 2001-12-18 2002-12-17 Method for processing substrates

Country Status (4)

Country Link
JP (1) JP4048048B2 (cg-RX-API-DMAC10.html)
AU (1) AU2002357591A1 (cg-RX-API-DMAC10.html)
TW (1) TW200301311A (cg-RX-API-DMAC10.html)
WO (1) WO2003052810A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479045B (zh) * 2011-12-09 2015-04-01 日立國際電氣股份有限公司 A semiconductor device manufacturing method, a substrate processing method, a substrate processing apparatus, and a recording medium

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003231516A1 (en) 2002-05-16 2003-12-02 Tokyo Electron Limited Method of treating substrate
US20080233764A1 (en) * 2004-04-09 2008-09-25 Tsuyoshi Takahashi Formation of Gate Insulation Film
JP2006245528A (ja) * 2005-02-01 2006-09-14 Tohoku Univ 誘電体膜及びその形成方法
JP2007012788A (ja) * 2005-06-29 2007-01-18 Elpida Memory Inc 半導体装置の製造方法
JP2008192975A (ja) * 2007-02-07 2008-08-21 Hitachi Kokusai Electric Inc 基板処理方法
JP6032963B2 (ja) * 2012-06-20 2016-11-30 キヤノン株式会社 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4001960B2 (ja) * 1995-11-03 2007-10-31 フリースケール セミコンダクター インコーポレイテッド 窒化酸化物誘電体層を有する半導体素子の製造方法
JP3485403B2 (ja) * 1995-11-28 2004-01-13 沖電気工業株式会社 半導体装置の製造方法
JPH1027795A (ja) * 1996-07-12 1998-01-27 Toshiba Corp 半導体装置の製造方法
JP3399413B2 (ja) * 1999-09-13 2003-04-21 日本電気株式会社 酸窒化膜およびその形成方法
JP4731694B2 (ja) * 2000-07-21 2011-07-27 東京エレクトロン株式会社 半導体装置の製造方法および基板処理装置
JP4713752B2 (ja) * 2000-12-28 2011-06-29 財団法人国際科学振興財団 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479045B (zh) * 2011-12-09 2015-04-01 日立國際電氣股份有限公司 A semiconductor device manufacturing method, a substrate processing method, a substrate processing apparatus, and a recording medium

Also Published As

Publication number Publication date
WO2003052810A1 (fr) 2003-06-26
JP2003188172A (ja) 2003-07-04
AU2002357591A1 (en) 2003-06-30
TW200301311A (en) 2003-07-01
JP4048048B2 (ja) 2008-02-13

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