AU2002357591A1 - Substrate treating method - Google Patents
Substrate treating methodInfo
- Publication number
- AU2002357591A1 AU2002357591A1 AU2002357591A AU2002357591A AU2002357591A1 AU 2002357591 A1 AU2002357591 A1 AU 2002357591A1 AU 2002357591 A AU2002357591 A AU 2002357591A AU 2002357591 A AU2002357591 A AU 2002357591A AU 2002357591 A1 AU2002357591 A1 AU 2002357591A1
- Authority
- AU
- Australia
- Prior art keywords
- treating method
- substrate treating
- substrate
- treating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-385108 | 2001-12-18 | ||
JP2001385108A JP4048048B2 (en) | 2001-12-18 | 2001-12-18 | Substrate processing method |
PCT/JP2002/013134 WO2003052810A1 (en) | 2001-12-18 | 2002-12-16 | Substrate treating method |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002357591A1 true AU2002357591A1 (en) | 2003-06-30 |
Family
ID=19187790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002357591A Abandoned AU2002357591A1 (en) | 2001-12-18 | 2002-12-16 | Substrate treating method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4048048B2 (en) |
AU (1) | AU2002357591A1 (en) |
TW (1) | TW200301311A (en) |
WO (1) | WO2003052810A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4256340B2 (en) | 2002-05-16 | 2009-04-22 | 東京エレクトロン株式会社 | Substrate processing method |
EP1742273A4 (en) * | 2004-04-09 | 2008-07-09 | Tokyo Electron Ltd | Method of forming gate insulating film, storage medium and computer program |
JP2006245528A (en) * | 2005-02-01 | 2006-09-14 | Tohoku Univ | Dielectric film and method for forming the same |
JP2007012788A (en) * | 2005-06-29 | 2007-01-18 | Elpida Memory Inc | Method of manufacturing semiconductor device |
JP2008192975A (en) * | 2007-02-07 | 2008-08-21 | Hitachi Kokusai Electric Inc | Method for processing substrate |
JP6039996B2 (en) * | 2011-12-09 | 2016-12-07 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program |
JP6032963B2 (en) * | 2012-06-20 | 2016-11-30 | キヤノン株式会社 | SOI substrate, method for manufacturing SOI substrate, and method for manufacturing semiconductor device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4001960B2 (en) * | 1995-11-03 | 2007-10-31 | フリースケール セミコンダクター インコーポレイテッド | Method for manufacturing a semiconductor device having a nitrided oxide dielectric layer |
JP3485403B2 (en) * | 1995-11-28 | 2004-01-13 | 沖電気工業株式会社 | Method for manufacturing semiconductor device |
JPH1027795A (en) * | 1996-07-12 | 1998-01-27 | Toshiba Corp | Manufacturing method of semiconductor device |
JP3399413B2 (en) * | 1999-09-13 | 2003-04-21 | 日本電気株式会社 | Oxynitride film and method for forming the same |
JP4731694B2 (en) * | 2000-07-21 | 2011-07-27 | 東京エレクトロン株式会社 | Semiconductor device manufacturing method and substrate processing apparatus |
JP4713752B2 (en) * | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | Semiconductor device and manufacturing method thereof |
-
2001
- 2001-12-18 JP JP2001385108A patent/JP4048048B2/en not_active Expired - Fee Related
-
2002
- 2002-12-16 WO PCT/JP2002/013134 patent/WO2003052810A1/en active Application Filing
- 2002-12-16 AU AU2002357591A patent/AU2002357591A1/en not_active Abandoned
- 2002-12-17 TW TW91136459A patent/TW200301311A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TWI292441B (en) | 2008-01-11 |
TW200301311A (en) | 2003-07-01 |
JP4048048B2 (en) | 2008-02-13 |
JP2003188172A (en) | 2003-07-04 |
WO2003052810A1 (en) | 2003-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2003236304A1 (en) | Method of treating substrate | |
AU2002308751A1 (en) | Authentication method | |
AU2002324574A1 (en) | Methods for treating prostatitis | |
AU2002225930A1 (en) | Methods for treating phosphatide-containing mixtures | |
AUPR617901A0 (en) | Method for treating multiple myeloma | |
AU2003231516A1 (en) | Method of treating substrate | |
AU2003257620A1 (en) | Substrate treating apparatus | |
AU2003248256A1 (en) | Surface treating method for substrate | |
AU2002357591A1 (en) | Substrate treating method | |
GB0103553D0 (en) | Substrate treatment | |
AU2002341150A1 (en) | Method | |
AU2002326991A1 (en) | Methods for treating multiple sclerosis | |
AU2002302775A1 (en) | Autocatalytic coating method | |
AU2002352120A1 (en) | Coating method | |
AUPR633101A0 (en) | Method | |
AU2002345028A1 (en) | Authentication method | |
AU2002357620A1 (en) | Substrate treatment method and substrate treatment apparatus | |
AU2002324888A1 (en) | Surface treatment method | |
AU2002364443A1 (en) | Method for treating polyolefin substrates | |
AU2002357673A1 (en) | Method and composition for treating substrates | |
AUPR611501A0 (en) | Coating method | |
AU2002328513A1 (en) | Substrate treating device and substrate treating method | |
AU2002346204A1 (en) | Substrate treating device and substrate treating method | |
AU2002324032A1 (en) | Method for treating the surfaces of substrates | |
AU2002240483A1 (en) | Method of treating ophtalmalogical conditions using micro-acupuncture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |