TWI292246B - Semiconductor-laser component, optical device for a semiconductor-laser component and method for the production of an optical device - Google Patents

Semiconductor-laser component, optical device for a semiconductor-laser component and method for the production of an optical device Download PDF

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Publication number
TWI292246B
TWI292246B TW094125358A TW94125358A TWI292246B TW I292246 B TWI292246 B TW I292246B TW 094125358 A TW094125358 A TW 094125358A TW 94125358 A TW94125358 A TW 94125358A TW I292246 B TWI292246 B TW I292246B
Authority
TW
Taiwan
Prior art keywords
semiconductor laser
radiation
optical device
component
laser component
Prior art date
Application number
TW094125358A
Other languages
English (en)
Chinese (zh)
Other versions
TW200610241A (en
Inventor
Michael Kuehnelt
Ulrich Steegmueller
Frank Singer
Thomas Schwarz
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200610241A publication Critical patent/TW200610241A/zh
Application granted granted Critical
Publication of TWI292246B publication Critical patent/TWI292246B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
TW094125358A 2004-07-30 2005-07-27 Semiconductor-laser component, optical device for a semiconductor-laser component and method for the production of an optical device TWI292246B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004037019 2004-07-30
DE102004050118A DE102004050118A1 (de) 2004-07-30 2004-10-14 Halbleiterlaserbauelement, optische Vorrichtung für ein Halbleiterlaserbauelement und Verfahren zur Herstellung einer optischen Vorrichtung

Publications (2)

Publication Number Publication Date
TW200610241A TW200610241A (en) 2006-03-16
TWI292246B true TWI292246B (en) 2008-01-01

Family

ID=34972330

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094125358A TWI292246B (en) 2004-07-30 2005-07-27 Semiconductor-laser component, optical device for a semiconductor-laser component and method for the production of an optical device

Country Status (7)

Country Link
US (1) US7860144B2 (enExample)
EP (1) EP1771926B1 (enExample)
JP (1) JP4886686B2 (enExample)
KR (1) KR101156808B1 (enExample)
DE (1) DE102004050118A1 (enExample)
TW (1) TWI292246B (enExample)
WO (1) WO2006012819A1 (enExample)

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* Cited by examiner, † Cited by third party
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DE102006017293A1 (de) 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer optisch pumpbaren Halbleitervorrichtung
DE102006017294A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Optisch pumpbare Halbleitervorrichtung
AT503027B1 (de) * 2006-05-08 2007-07-15 Austria Tech & System Tech Leiterplattenelement mit optoelektronischem bauelement und licht-wellenleiter
DE102006040263A1 (de) * 2006-08-28 2008-03-06 Osram Opto Semiconductors Gmbh Optisches Element, optoelektronische Halbleitervorrichtung sowie Verfahren zur Herstellung eines optischen Elements
DE102006042195A1 (de) * 2006-09-08 2008-03-27 Osram Opto Semiconductors Gmbh Etalon und optoelektronische Halbleitervorrichtung
DE102007004302A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
JP2008198980A (ja) * 2007-01-15 2008-08-28 Seiko Epson Corp レーザ光源装置、照明装置、画像表示装置、及びモニタ装置
DE102007062047A1 (de) 2007-12-21 2009-07-16 Osram Opto Semiconductors Gmbh Kompaktgehäuse
JP5024088B2 (ja) * 2008-02-05 2012-09-12 セイコーエプソン株式会社 レーザ光源装置、照明装置、画像表示装置及びモニタ装置
JP2009192873A (ja) * 2008-02-15 2009-08-27 Seiko Epson Corp 光源装置、画像表示装置及びモニタ装置
DE102008010297A1 (de) * 2008-02-21 2009-10-29 Osram Opto Semiconductors Gmbh Frequenz-Konversions-Vorrichtung und Verfahren zur Herstellung einer Frequenz-Konversions-Vorrichtung
US7669366B2 (en) * 2008-04-12 2010-03-02 Felknor Ventures Llc Plant retainer for retaining a plant for growth from the side or bottom of a planter
DE102008030818B4 (de) * 2008-06-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen
DE102008052376A1 (de) * 2008-10-20 2010-04-22 Osram Opto Semiconductors Gmbh Laseranordnung
KR101978013B1 (ko) * 2012-01-20 2019-05-13 엑살로스 아게 Oct를 위한 그리즘을 갖춘 파장-가변형 외부 캐비티 레이저 다이오드
DE102012205513B4 (de) * 2012-04-04 2021-12-09 Osram Gmbh Verfahren zum Herstellen einer Strahlungsanordnung und Strahlungsanordnung
US10043615B2 (en) * 2012-10-08 2018-08-07 Maxwell Technologies, Inc. Electrode porosity for three-volt ultracapacitor
US10270224B2 (en) * 2015-06-04 2019-04-23 Nlight, Inc. Angled DBR-grating laser/amplifier with one or more mode-hopping regions
EP3130950A1 (de) 2015-08-10 2017-02-15 Multiphoton Optics Gmbh Strahlumlenkelement sowie optisches bauelement mit strahlumlenkelement
DE102016107499A1 (de) * 2016-04-22 2017-10-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Frequenzverdoppler sowie Verfahren zum Erzeugen elektromagnetischer Strahlung
DE102016107715A1 (de) * 2016-04-26 2017-10-26 Osram Opto Semiconductors Gmbh Lasermodul mit einem optischen Bauteil
US10263391B2 (en) * 2017-09-07 2019-04-16 Apple Inc. Horizontal external-cavity laser geometry
EP4033621B1 (en) 2019-09-20 2023-11-01 Nichia Corporation Light source device and method of manufacturing the same
DE102019215098A1 (de) * 2019-10-01 2021-04-01 Robert Bosch Gmbh Mikromechanisch-optisches Bauteil und Herstellungsverfahren

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AU659270B2 (en) * 1992-02-20 1995-05-11 Sony Corporation Laser light beam generating apparatus
DE19536880B4 (de) * 1995-09-01 2006-08-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laseranordnung zur Skalierung von frequenzverdoppelten Lasern
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EP1513006B1 (en) 1999-10-28 2010-12-15 FUJIFILM Corporation Light wavelength converting system
JP2001230492A (ja) * 2000-02-21 2001-08-24 Fuji Photo Film Co Ltd 半導体発光装置
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JP2004221321A (ja) * 2003-01-15 2004-08-05 Mitsubishi Electric Corp 波長可変半導体光装置

Also Published As

Publication number Publication date
US7860144B2 (en) 2010-12-28
DE102004050118A1 (de) 2006-03-23
US20090225797A1 (en) 2009-09-10
WO2006012819A1 (de) 2006-02-09
TW200610241A (en) 2006-03-16
JP4886686B2 (ja) 2012-02-29
EP1771926A1 (de) 2007-04-11
KR20070047332A (ko) 2007-05-04
JP2008508698A (ja) 2008-03-21
KR101156808B1 (ko) 2012-06-18
EP1771926B1 (de) 2017-08-09

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MM4A Annulment or lapse of patent due to non-payment of fees