KR101156808B1 - 반도체 레이저 부품, 반도체 레이저 부품의 광학소자 및광학소자 제조방법 - Google Patents

반도체 레이저 부품, 반도체 레이저 부품의 광학소자 및광학소자 제조방법 Download PDF

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KR101156808B1
KR101156808B1 KR1020077004813A KR20077004813A KR101156808B1 KR 101156808 B1 KR101156808 B1 KR 101156808B1 KR 1020077004813 A KR1020077004813 A KR 1020077004813A KR 20077004813 A KR20077004813 A KR 20077004813A KR 101156808 B1 KR101156808 B1 KR 101156808B1
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South Korea
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semiconductor laser
radiation
support
mirror
laser chip
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KR20070047332A (ko
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마이클 쿠넬트
토마스 슈와즈
프랭크 싱어
울리치 스티그물러
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
KR1020077004813A 2004-07-30 2005-06-24 반도체 레이저 부품, 반도체 레이저 부품의 광학소자 및광학소자 제조방법 Expired - Fee Related KR101156808B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102004037019 2004-07-30
DE102004037019.2 2004-07-30
DE102004050118.1 2004-10-14
DE102004050118A DE102004050118A1 (de) 2004-07-30 2004-10-14 Halbleiterlaserbauelement, optische Vorrichtung für ein Halbleiterlaserbauelement und Verfahren zur Herstellung einer optischen Vorrichtung
PCT/DE2005/001122 WO2006012819A1 (de) 2004-07-30 2005-06-24 Halbleiterlaserbauelement, optische vorrichtung für ein halbleiterlaserbauelement und verfahren zur herstellung einer optischen vorrichtung

Publications (2)

Publication Number Publication Date
KR20070047332A KR20070047332A (ko) 2007-05-04
KR101156808B1 true KR101156808B1 (ko) 2012-06-18

Family

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KR1020077004813A Expired - Fee Related KR101156808B1 (ko) 2004-07-30 2005-06-24 반도체 레이저 부품, 반도체 레이저 부품의 광학소자 및광학소자 제조방법

Country Status (7)

Country Link
US (1) US7860144B2 (enExample)
EP (1) EP1771926B1 (enExample)
JP (1) JP4886686B2 (enExample)
KR (1) KR101156808B1 (enExample)
DE (1) DE102004050118A1 (enExample)
TW (1) TWI292246B (enExample)
WO (1) WO2006012819A1 (enExample)

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DE102006017293A1 (de) 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer optisch pumpbaren Halbleitervorrichtung
DE102006017294A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Optisch pumpbare Halbleitervorrichtung
AT503027B1 (de) * 2006-05-08 2007-07-15 Austria Tech & System Tech Leiterplattenelement mit optoelektronischem bauelement und licht-wellenleiter
DE102006040263A1 (de) * 2006-08-28 2008-03-06 Osram Opto Semiconductors Gmbh Optisches Element, optoelektronische Halbleitervorrichtung sowie Verfahren zur Herstellung eines optischen Elements
DE102006042195A1 (de) * 2006-09-08 2008-03-27 Osram Opto Semiconductors Gmbh Etalon und optoelektronische Halbleitervorrichtung
DE102007004302A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
JP2008198980A (ja) * 2007-01-15 2008-08-28 Seiko Epson Corp レーザ光源装置、照明装置、画像表示装置、及びモニタ装置
DE102007062047A1 (de) 2007-12-21 2009-07-16 Osram Opto Semiconductors Gmbh Kompaktgehäuse
JP5024088B2 (ja) * 2008-02-05 2012-09-12 セイコーエプソン株式会社 レーザ光源装置、照明装置、画像表示装置及びモニタ装置
JP2009192873A (ja) * 2008-02-15 2009-08-27 Seiko Epson Corp 光源装置、画像表示装置及びモニタ装置
DE102008010297A1 (de) * 2008-02-21 2009-10-29 Osram Opto Semiconductors Gmbh Frequenz-Konversions-Vorrichtung und Verfahren zur Herstellung einer Frequenz-Konversions-Vorrichtung
US7669366B2 (en) * 2008-04-12 2010-03-02 Felknor Ventures Llc Plant retainer for retaining a plant for growth from the side or bottom of a planter
DE102008030818B4 (de) * 2008-06-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen
DE102008052376A1 (de) * 2008-10-20 2010-04-22 Osram Opto Semiconductors Gmbh Laseranordnung
KR101978013B1 (ko) * 2012-01-20 2019-05-13 엑살로스 아게 Oct를 위한 그리즘을 갖춘 파장-가변형 외부 캐비티 레이저 다이오드
DE102012205513B4 (de) * 2012-04-04 2021-12-09 Osram Gmbh Verfahren zum Herstellen einer Strahlungsanordnung und Strahlungsanordnung
US10043615B2 (en) * 2012-10-08 2018-08-07 Maxwell Technologies, Inc. Electrode porosity for three-volt ultracapacitor
US10270224B2 (en) * 2015-06-04 2019-04-23 Nlight, Inc. Angled DBR-grating laser/amplifier with one or more mode-hopping regions
EP3130950A1 (de) 2015-08-10 2017-02-15 Multiphoton Optics Gmbh Strahlumlenkelement sowie optisches bauelement mit strahlumlenkelement
DE102016107499A1 (de) * 2016-04-22 2017-10-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Frequenzverdoppler sowie Verfahren zum Erzeugen elektromagnetischer Strahlung
DE102016107715A1 (de) * 2016-04-26 2017-10-26 Osram Opto Semiconductors Gmbh Lasermodul mit einem optischen Bauteil
US10263391B2 (en) * 2017-09-07 2019-04-16 Apple Inc. Horizontal external-cavity laser geometry
EP4033621B1 (en) 2019-09-20 2023-11-01 Nichia Corporation Light source device and method of manufacturing the same
DE102019215098A1 (de) * 2019-10-01 2021-04-01 Robert Bosch Gmbh Mikromechanisch-optisches Bauteil und Herstellungsverfahren

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WO1997022166A2 (de) * 1995-12-14 1997-06-19 Manfred Gabbert Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern
EP1096307A2 (en) * 1999-10-28 2001-05-02 Fuji Photo Film Co., Ltd. Optical wavelength converting system and wavelength stabilised laser
US20030123495A1 (en) 2001-12-31 2003-07-03 Cox James Allen Tunable laser assembly
DE10241192A1 (de) * 2002-09-05 2004-03-11 Osram Opto Semiconductors Gmbh Optisch gepumpte strahlungsemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung

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WO1997022166A2 (de) * 1995-12-14 1997-06-19 Manfred Gabbert Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern
EP1096307A2 (en) * 1999-10-28 2001-05-02 Fuji Photo Film Co., Ltd. Optical wavelength converting system and wavelength stabilised laser
US20030123495A1 (en) 2001-12-31 2003-07-03 Cox James Allen Tunable laser assembly
DE10241192A1 (de) * 2002-09-05 2004-03-11 Osram Opto Semiconductors Gmbh Optisch gepumpte strahlungsemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung

Also Published As

Publication number Publication date
US7860144B2 (en) 2010-12-28
DE102004050118A1 (de) 2006-03-23
US20090225797A1 (en) 2009-09-10
WO2006012819A1 (de) 2006-02-09
TW200610241A (en) 2006-03-16
JP4886686B2 (ja) 2012-02-29
TWI292246B (en) 2008-01-01
EP1771926A1 (de) 2007-04-11
KR20070047332A (ko) 2007-05-04
JP2008508698A (ja) 2008-03-21
EP1771926B1 (de) 2017-08-09

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