JP4886686B2 - 半導体レーザモジュール、半導体レーザモジュールのための光学装置および光学装置の製造方法 - Google Patents

半導体レーザモジュール、半導体レーザモジュールのための光学装置および光学装置の製造方法 Download PDF

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Publication number
JP4886686B2
JP4886686B2 JP2007522906A JP2007522906A JP4886686B2 JP 4886686 B2 JP4886686 B2 JP 4886686B2 JP 2007522906 A JP2007522906 A JP 2007522906A JP 2007522906 A JP2007522906 A JP 2007522906A JP 4886686 B2 JP4886686 B2 JP 4886686B2
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semiconductor laser
support
laser module
module according
laser chip
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Expired - Fee Related
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JP2007522906A
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Japanese (ja)
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JP2008508698A5 (enExample
JP2008508698A (ja
Inventor
キューネルト ミヒャエル
シュヴァルツ トーマス
ジンガー フランク
シュテークミュラー ウルリッヒ
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2007522906A 2004-07-30 2005-06-24 半導体レーザモジュール、半導体レーザモジュールのための光学装置および光学装置の製造方法 Expired - Fee Related JP4886686B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102004037019 2004-07-30
DE102004037019.2 2004-07-30
DE102004050118.1 2004-10-14
DE102004050118A DE102004050118A1 (de) 2004-07-30 2004-10-14 Halbleiterlaserbauelement, optische Vorrichtung für ein Halbleiterlaserbauelement und Verfahren zur Herstellung einer optischen Vorrichtung
PCT/DE2005/001122 WO2006012819A1 (de) 2004-07-30 2005-06-24 Halbleiterlaserbauelement, optische vorrichtung für ein halbleiterlaserbauelement und verfahren zur herstellung einer optischen vorrichtung

Publications (3)

Publication Number Publication Date
JP2008508698A JP2008508698A (ja) 2008-03-21
JP2008508698A5 JP2008508698A5 (enExample) 2011-12-01
JP4886686B2 true JP4886686B2 (ja) 2012-02-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007522906A Expired - Fee Related JP4886686B2 (ja) 2004-07-30 2005-06-24 半導体レーザモジュール、半導体レーザモジュールのための光学装置および光学装置の製造方法

Country Status (7)

Country Link
US (1) US7860144B2 (enExample)
EP (1) EP1771926B1 (enExample)
JP (1) JP4886686B2 (enExample)
KR (1) KR101156808B1 (enExample)
DE (1) DE102004050118A1 (enExample)
TW (1) TWI292246B (enExample)
WO (1) WO2006012819A1 (enExample)

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* Cited by examiner, † Cited by third party
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DE102006017293A1 (de) 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer optisch pumpbaren Halbleitervorrichtung
DE102006017294A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Optisch pumpbare Halbleitervorrichtung
AT503027B1 (de) * 2006-05-08 2007-07-15 Austria Tech & System Tech Leiterplattenelement mit optoelektronischem bauelement und licht-wellenleiter
DE102006040263A1 (de) * 2006-08-28 2008-03-06 Osram Opto Semiconductors Gmbh Optisches Element, optoelektronische Halbleitervorrichtung sowie Verfahren zur Herstellung eines optischen Elements
DE102006042195A1 (de) * 2006-09-08 2008-03-27 Osram Opto Semiconductors Gmbh Etalon und optoelektronische Halbleitervorrichtung
DE102007004302A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
JP2008198980A (ja) * 2007-01-15 2008-08-28 Seiko Epson Corp レーザ光源装置、照明装置、画像表示装置、及びモニタ装置
DE102007062047A1 (de) 2007-12-21 2009-07-16 Osram Opto Semiconductors Gmbh Kompaktgehäuse
JP5024088B2 (ja) * 2008-02-05 2012-09-12 セイコーエプソン株式会社 レーザ光源装置、照明装置、画像表示装置及びモニタ装置
JP2009192873A (ja) * 2008-02-15 2009-08-27 Seiko Epson Corp 光源装置、画像表示装置及びモニタ装置
DE102008010297A1 (de) * 2008-02-21 2009-10-29 Osram Opto Semiconductors Gmbh Frequenz-Konversions-Vorrichtung und Verfahren zur Herstellung einer Frequenz-Konversions-Vorrichtung
US7669366B2 (en) * 2008-04-12 2010-03-02 Felknor Ventures Llc Plant retainer for retaining a plant for growth from the side or bottom of a planter
DE102008030818B4 (de) * 2008-06-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen
DE102008052376A1 (de) * 2008-10-20 2010-04-22 Osram Opto Semiconductors Gmbh Laseranordnung
KR101978013B1 (ko) * 2012-01-20 2019-05-13 엑살로스 아게 Oct를 위한 그리즘을 갖춘 파장-가변형 외부 캐비티 레이저 다이오드
DE102012205513B4 (de) * 2012-04-04 2021-12-09 Osram Gmbh Verfahren zum Herstellen einer Strahlungsanordnung und Strahlungsanordnung
US10043615B2 (en) * 2012-10-08 2018-08-07 Maxwell Technologies, Inc. Electrode porosity for three-volt ultracapacitor
US10270224B2 (en) * 2015-06-04 2019-04-23 Nlight, Inc. Angled DBR-grating laser/amplifier with one or more mode-hopping regions
EP3130950A1 (de) 2015-08-10 2017-02-15 Multiphoton Optics Gmbh Strahlumlenkelement sowie optisches bauelement mit strahlumlenkelement
DE102016107499A1 (de) * 2016-04-22 2017-10-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Frequenzverdoppler sowie Verfahren zum Erzeugen elektromagnetischer Strahlung
DE102016107715A1 (de) * 2016-04-26 2017-10-26 Osram Opto Semiconductors Gmbh Lasermodul mit einem optischen Bauteil
US10263391B2 (en) * 2017-09-07 2019-04-16 Apple Inc. Horizontal external-cavity laser geometry
EP4033621B1 (en) 2019-09-20 2023-11-01 Nichia Corporation Light source device and method of manufacturing the same
DE102019215098A1 (de) * 2019-10-01 2021-04-01 Robert Bosch Gmbh Mikromechanisch-optisches Bauteil und Herstellungsverfahren

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DE19548647C2 (de) 1995-12-14 2003-01-23 Manfred Gabbert Durchstimmbare, justierstabile Halbleiterlaserlichtquelle sowie ein Verfahren zur optisch stabilen, weitgehend kontinuierlichen Durchstimmung von Halbleiterlasern
US6002695A (en) * 1996-05-31 1999-12-14 Dpss Lasers, Inc. High efficiency high repetition rate, intra-cavity tripled diode pumped solid state laser
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JP2001230492A (ja) * 2000-02-21 2001-08-24 Fuji Photo Film Co Ltd 半導体発光装置
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Also Published As

Publication number Publication date
US7860144B2 (en) 2010-12-28
DE102004050118A1 (de) 2006-03-23
US20090225797A1 (en) 2009-09-10
WO2006012819A1 (de) 2006-02-09
TW200610241A (en) 2006-03-16
TWI292246B (en) 2008-01-01
EP1771926A1 (de) 2007-04-11
KR20070047332A (ko) 2007-05-04
JP2008508698A (ja) 2008-03-21
KR101156808B1 (ko) 2012-06-18
EP1771926B1 (de) 2017-08-09

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