WO1997022166A2 - Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern - Google Patents
Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern Download PDFInfo
- Publication number
- WO1997022166A2 WO1997022166A2 PCT/DE1996/002458 DE9602458W WO9722166A2 WO 1997022166 A2 WO1997022166 A2 WO 1997022166A2 DE 9602458 W DE9602458 W DE 9602458W WO 9722166 A2 WO9722166 A2 WO 9722166A2
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- Prior art keywords
- laser
- resonator
- wavelength
- light source
- largely
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 45
- 238000003384 imaging method Methods 0.000 claims description 23
- 230000005855 radiation Effects 0.000 claims description 13
- 230000003595 spectral effect Effects 0.000 claims description 8
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 201000009310 astigmatism Diseases 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 claims 1
- 241000282326 Felis catus Species 0.000 abstract description 3
- 238000006073 displacement reaction Methods 0.000 abstract description 3
- 238000004611 spectroscopical analysis Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000006185 dispersion Substances 0.000 description 5
- 230000006978 adaptation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
- G01J3/433—Modulation spectrometry; Derivative spectrometry
- G01J3/4338—Frequency modulated spectrometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal modes
- H01S3/08031—Single-mode emission
- H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/0804—Transverse or lateral modes
- H01S3/0805—Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
- H01S3/08068—Holes; Stepped surface; Special cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
- H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
Definitions
- the invention relates to a laser light source with a broadband amplifying, narrowband tunable active medium, in particular a semiconductor laser light source, which is characterized by the possibility of tuning the laser wavelength without jumps at least in wide areas of the laser gain curve and at the same time by high optical stability, application area for such a light source including optical spectroscopy
- Tunable light sources with a semiconductor laser as an active element are known in many variants, including those that enable continuous tuning in a more or less wide spectral range or at least allow any wavelength to be set within a given interval when accepting wavelength jumps
- Monolithic components are characterized by their compactness and by the fact that the tuning of the emission wavelength and the appropriate path length change in the resonator can only be achieved with electronic means.
- the range of continuous tuning is at least a factor 2 to 5 narrower than the laser gain curve
- Hybrid arrangements essentially consist of a laser diode, which is preferably largely anti-reflective on one side, so that it no longer appears as a resonator, and an external resonator component that permits wavelength-selective tunable feedback of the emitted light to the anti-reflective laser facet Entire gain curve of the laser possible.
- the adaptation of the resonator length can be separated from the selection of the feedback coupled spectral range without consideration of further ones Parameters take place So far, however, only relatively complicated arrangements have been known to implement this adaptation more or less automatically. The following three solutions represent the state of the art
- Translation elements and a coupling rod are mechanically linked to the resonator length setting so that the laser wavelength can be continuously tuned over 1.2% of the middle world length.
- the arrangement of the grating on a piezotranslator allows small deviations to be extracted
- the jump-free wavelength tuning (displacement and rotation of the grating) are two more degrees of freedom, which, however, are not required to adjust any output parameters, must be held very sensitively in an optimal position.
- this is the tilting of the beam path perpendicular to the dispersion direction of the grating and, on the other hand, the displacement of the laser chip along the optical axis with respect to the collimator by the necessary exact Imaging of the laser facet on itself can be achieved Since the optically effective facet of the laser chip is very small, this places high demands on the precision and stability of the mechanics. This is made more difficult by the fact that within these two 5-dimensional adjustment modules only an optimal position and only one that can be used as a benchmark
- the mechanical structure of the first solution because of its long travel range for the resonator length, is the only one that allows the wavelength to be set continuously over a wide range. However, the mechanics naturally only permit slow tuning. The other two solutions allow continuous tuning only over narrow ranges
- An arrangement is also known for wavelength selection in lasers with broadband stimulable medium, in particular dye lasers, which is treated in various variants in DE-AS 2051328, H 01 S 3/08 and associated additional patent DE-OS 2236505 H 01 S 3/08 the selection of the wavelength is essentially achieved in that the light is focused into a pinhole within the resonator and behind the pinhole an optical system with a high color length deviation and a small opening error is arranged such that in connection with one of the resonator mirrors for only one wavelength range narrows an image back into the pinhole without significant losses.
- the tuning is carried out by moving the optics along their optical axis.
- the optical axis of the selection arrangement is either shifted relative to the geometric axis of the stimulable medium or forms an angle with it.
- the op Tics with the high color length deviation can be combined with the associated resonator end mirror as a Fresnel zone lens to form a component
- the first solution is in / P Zorabedian and W R Trutna, Jr Interference-filter-tuned, alignment-stabilized semiconduetor extemal-cavity laser, OPTICS LETTERS / Voi 13, No 10 (1988), pp
- a cat's eye retroreflector (collecting optics with mirror in its focal plane) is used for the adjustment-tolerant feedback of the laser radiation.
- An interference filter is located in the parallel beam path within the resonator as a selective element. This filter is rotatably mounted to tune the laser wavelength Usable radiation comes from the facet of the laser chip facing away from the external resonator EP 0 525 752 A1, H 01 S 3/1055 contains a further possibility for the construction of an adjustable stable laser with an external resonator.
- a cat's eye retroreflector is also used in the pnnzip, however its effect is limited to a coordinate by a suitable combination of pnsmen and a cylinder optics for beam shaping and the use of a diffraction grating as a reflector results in an image of the laser facet on the grating only perpendicular to the
- Dispersion in the dispersion beam that strikes the grating is largely parallel and relatively wide. In this way it is achieved that the grating can be used without restriction to tune the laser wavelength, on the other hand the arrangement is largely tolerant of a grating tilt perpendicular to the dispersion direction
- Laser sources which can be continuously tuned over a wide range, are required in optical spectroscopy, among other things. Their significance arises, among other things, from the fact that a mode spacing in conventional resonator lengths corresponds to at least about an atomic lane width and, as a result, correspondingly wide wavelength ranges are skipped in the case of discontinuous tuning
- the object of the invention is to provide a semiconductor laser light source in which high stability is achieved by the optical concept and which also offers the possibility of
- a hybrid arrangement consisting of the laser chip that is largely anti-reflective on one side, a largely opening-error-compensated optical system with high color length deviation for imaging the laser facet onto a reflector and the reflector itself.
- the high color length deviation is achieved by suitable configuration and by the choice of the imaging scale optical system achieved
- FIG. 2 shows a variant which is improved with regard to continuous tunability and
- FIG. 3 shows an embodiment which deaves a particularly simple and fast continuous wavelength tuning
- the optical system consists of a first partial optics O 1 1 which contains a collimator KO as an essential component and a second partial optics O 12 which produces a reduced image of the laser facet on the reflector SP and contains this Radiation emitted by the laser chip LD into the optical system is expediently carried out via a separating mirror TS at 45 ° which is provided with a conical bore around the optical axis.
- the mode can be achieved by moving the laser light source by shifting the laser diode LD along the optical axis (arrow V 1), so that the emission wavelength of the arrangement can be adjusted.
- the deviation in color length cannot be increased so much here That the resonator length changes to the same extent as the selected wavelength.
- the wavelength is appropriately tuned first by moving the second partial optics O 12 relative to the first partial optics O 1 1 along the optical axis (arrow direction V 2), while at the same time with the aid of a control selected wavelength is shifted by moving the laser diode LD along the optical axis (arrow direction V 1) such that no mode jump occurs
- FIG. 2 uses a very similar optical system to Example 1, but with the difference that the first partial optics O 21 do not image the laser facet to infinity, but rather to a finite image width and accordingly the second partial optics O 22 is designed in such a way that it generates an image of the laser facet on the reflector SP under these conditions.
- the tuning of the laser wavelength can also be carried out solely by shifting the second partial optics O 22 relative to the first partial optics O 21 along the optical axis.
- the location of the laser chip LD is essentially the same
- wavelength tuning and suitable resonator change can be achieved by setting essentially only one coordinate (V 2), both of which can be matched to one another by selecting an imaging scale.
- V 2 essentially only one coordinate
- a third Vanante of the laser light source ( 3) also establishes the connection between wavelength selection and suitable resonator change in an optical manner.
- the optical system of this construction essentially contains two completely opposed imaging optics AO 1, AO 2 and the reflector SP.
- the overall system is expediently in two parts T 1 and T 2 divided, between which a largely parallel beam path P occurs. First, the laser facet is scaled down by the first
- Imaging optics AO 1 which essentially corresponds to the optical system from Example 1, however, the radiation from the location of the image of the laser facet is not reflected here in the same optics, but instead passes through an almost identical imaging optics AO 2 in the opposite direction and only then hits the reflector SP
- the difference between the second imaging optics AO 2 and the first 5 imaging optics AO 1 essentially only exists in that the image width of the second Imaging optics for the reflector SP is several times larger than the object distance of the first imaging optics for the laser chip LD
- the desired high color length deviation is achieved at the location of the laser with simultaneous possible use of the opening angle of the laser radiation and thus the necessary selectivity, but at the same time it is easy to use suitable ones Choice of the imaging scale of the second imaging optics AO 2
- the color length deviation at the location of the image of the laser facet on the reflector SP is set such that the emission wavelength of the laser light source, including the appropriate optical resonator change, can be adjusted simply by moving the reflector SP in the direction V 3.
- the beam path P is largely parallel.
- the length of the parallel beam path can be varied within certain limits, so that there is an adjustment possibility for the total resonator length.
- the reflector SP is, for example, on one Micrometer SCH attached
- the advantage of this arrangement compared to example 1 is that the color length deviations at the location of the laser chip and at the location of the reflector can be determined independently of one another and thus the continuous tunability can be achieved by adjusting only one coordinate, and moreover compared to example 2, that only the small, light reflector has to be moved as a tuning element, which simplifies handling and also gives the possibility of fast wavelength modulation, for example, by the reflector being able to be attached to a piezotranslator, since the modulation generally only over a relatively small part of the entire tuning range takes place, the accuracy of the course of the color-length deviation of the optics is sufficient for this purpose. The control therefore does not have to be able to follow the modulation frequency
- the laser wavelength can only be achieved by changing the resonator length alone, the shift of the laser is inevitably associated with the appropriate shift of the feedback spectral range, so that the oscillating laser mode can be continuously modulated over many mode distances without any problems List of the reference symbols used
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9521621A JP2000501887A (ja) | 1995-12-14 | 1996-12-13 | 同調可能かつ調整が安定な半導体レーザ光源及び半導体レーザの光学的に安定なほぼ連続的な同調のための方法 |
EP96946101A EP0867057A2 (de) | 1995-12-14 | 1996-12-13 | Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern |
US09/077,957 US6785305B1 (en) | 1995-12-14 | 1996-12-13 | Tuneable, adjustment-stable semiconductor laser light source and a method for the optically stable, largely continuous tuning of semiconductor lasers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19548647A DE19548647C2 (de) | 1995-12-14 | 1995-12-14 | Durchstimmbare, justierstabile Halbleiterlaserlichtquelle sowie ein Verfahren zur optisch stabilen, weitgehend kontinuierlichen Durchstimmung von Halbleiterlasern |
DE19548647.1 | 1995-12-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1997022166A2 true WO1997022166A2 (de) | 1997-06-19 |
WO1997022166A3 WO1997022166A3 (de) | 1997-08-14 |
Family
ID=7781351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1996/002458 WO1997022166A2 (de) | 1995-12-14 | 1996-12-13 | Durchstimmbare, justierstabile halbleiterlaserlichtquelle sowie ein verfahren zur optisch stabilen, weitgehend kontinuierlichen durchstimmung von halbleiterlasern |
Country Status (5)
Country | Link |
---|---|
US (1) | US6785305B1 (de) |
EP (1) | EP0867057A2 (de) |
JP (1) | JP2000501887A (de) |
DE (1) | DE19548647C2 (de) |
WO (1) | WO1997022166A2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006012819A1 (de) * | 2004-07-30 | 2006-02-09 | Osram Opto Semiconductors Gmbh | Halbleiterlaserbauelement, optische vorrichtung für ein halbleiterlaserbauelement und verfahren zur herstellung einer optischen vorrichtung |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070002922A1 (en) * | 2005-06-30 | 2007-01-04 | Intel Corporation | Retro-reflecting lens for external cavity optics |
JP2016134484A (ja) * | 2015-01-19 | 2016-07-25 | 国立大学法人大阪大学 | レーザー共振装置、及びそれを備えたレーザー装置、並びに、可変型バンドパスフィルタ装置 |
DE102018208147A1 (de) | 2018-05-24 | 2019-11-28 | Carl Zeiss Smt Gmbh | Messanordnung zur frequenszbasierten Positionsbestimmung einer Komponente |
CN112821191A (zh) * | 2020-12-31 | 2021-05-18 | 中国电子科技集团公司第十三研究所 | 半导体激光器驱动电路、多线激光器及多线激光雷达 |
Citations (2)
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---|---|---|---|---|
US3663897A (en) * | 1969-02-06 | 1972-05-16 | Inst Angewandte Physik | Method of modulating a laser beam and related apparatus |
EP0587154A2 (de) * | 1992-09-10 | 1994-03-16 | Hughes Aircraft Company | Vielfachlasersystem mit schmaler Bandbreite |
Family Cites Families (9)
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DE2051328B2 (de) | 1970-10-20 | 1973-03-29 | Fa. Carl Zeiss, 7920 Heidenheim | Vorrichtung zur wellenlaengenselektion bei breitbandig emittierenden lasern |
GB8807385D0 (en) | 1988-03-29 | 1988-05-05 | British Telecomm | Semiconductor device assembly |
JP2527007B2 (ja) * | 1988-09-29 | 1996-08-21 | 日本電気株式会社 | 光機能素子 |
US4907237A (en) * | 1988-10-18 | 1990-03-06 | The United States Of America As Represented By The Secretary Of Commerce | Optical feedback locking of semiconductor lasers |
US5050179A (en) * | 1989-04-20 | 1991-09-17 | Massachusetts Institute Of Technology | External cavity semiconductor laser |
US5172390A (en) * | 1989-04-20 | 1992-12-15 | Massachusetts Institute Of Technology | Pre-aligned diode laser for external cavity operation |
JPH03209638A (ja) * | 1990-01-11 | 1991-09-12 | Fujitsu Ltd | 光学ヘッド |
US5177750A (en) | 1991-07-30 | 1993-01-05 | Hewlett-Packard Company | Misalignment-tolerant, grating-tuned external-cavity laser with enhanced longitudinal mode selectivity |
US5524012A (en) * | 1994-10-27 | 1996-06-04 | New Focus, Inc. | Tunable, multiple frequency laser diode |
-
1995
- 1995-12-14 DE DE19548647A patent/DE19548647C2/de not_active Expired - Fee Related
-
1996
- 1996-12-13 EP EP96946101A patent/EP0867057A2/de not_active Withdrawn
- 1996-12-13 US US09/077,957 patent/US6785305B1/en not_active Expired - Fee Related
- 1996-12-13 WO PCT/DE1996/002458 patent/WO1997022166A2/de not_active Application Discontinuation
- 1996-12-13 JP JP9521621A patent/JP2000501887A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US3663897A (en) * | 1969-02-06 | 1972-05-16 | Inst Angewandte Physik | Method of modulating a laser beam and related apparatus |
EP0587154A2 (de) * | 1992-09-10 | 1994-03-16 | Hughes Aircraft Company | Vielfachlasersystem mit schmaler Bandbreite |
Non-Patent Citations (5)
Title |
---|
ELECTRONICS LETTERS, Bd. 22, Nr. 15, 17.Juli 1986, STEVENAGE GB, Seiten 795-796, XP002032605 F. FAVRE: "external cavity semiconductor laser with 15 nm continuous tuning range" in der Anmeldung erw{hnt * |
IEEE JOURNAL OF QUANTUM ELECTRONICS, Bd. qe-18, Nr. 2, Februar 1982, NEW YORK US, Seiten 155-157, XP002032604 H. SATO ET AL: "Design of nondispersion optical feedback system using diffraction grating for semiconductor laser multiple longitudinal modes control" * |
OPTICS LETTERS, Bd. 13, Nr. 10, Oktober 1988, Seiten 826-828, XP000050989 ZORABEDIAN P ET AL: "INTERFERENCE-FILTER-TUNED, ALIGNMENT-STABILIZED, SEMICONDUCTOR EXTERNAL-CAVITY LASER" in der Anmeldung erw{hnt * |
PATENT ABSTRACTS OF JAPAN vol. 014, no. 292 (E-0944), 25.Juni 1990 & JP 02 094489 A (NEC CORP), 5.April 1990, * |
PATENT ABSTRACTS OF JAPAN vol. 015, no. 487 (P-1286), 10.Dezember 1991 & JP 03 209638 A (FUJITSU LTD), 12.September 1991, * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006012819A1 (de) * | 2004-07-30 | 2006-02-09 | Osram Opto Semiconductors Gmbh | Halbleiterlaserbauelement, optische vorrichtung für ein halbleiterlaserbauelement und verfahren zur herstellung einer optischen vorrichtung |
JP2008508698A (ja) * | 2004-07-30 | 2008-03-21 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 半導体レーザモジュール、半導体レーザモジュールのための光学装置および光学装置の製造方法 |
US7860144B2 (en) | 2004-07-30 | 2010-12-28 | Osram Opto Semiconductors Gmbh | Semiconductor laser component, optical device for a semiconductor laser component, and method for producing an optical device |
KR101156808B1 (ko) * | 2004-07-30 | 2012-06-18 | 오스람 옵토 세미컨덕터스 게엠베하 | 반도체 레이저 부품, 반도체 레이저 부품의 광학소자 및광학소자 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
DE19548647A1 (de) | 1997-06-26 |
US6785305B1 (en) | 2004-08-31 |
EP0867057A2 (de) | 1998-09-30 |
WO1997022166A3 (de) | 1997-08-14 |
JP2000501887A (ja) | 2000-02-15 |
DE19548647C2 (de) | 2003-01-23 |
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