TWI289238B - Negative resist compositions using for electronic irradiation - Google Patents

Negative resist compositions using for electronic irradiation Download PDF

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Publication number
TWI289238B
TWI289238B TW090100434A TW90100434A TWI289238B TW I289238 B TWI289238 B TW I289238B TW 090100434 A TW090100434 A TW 090100434A TW 90100434 A TW90100434 A TW 90100434A TW I289238 B TWI289238 B TW I289238B
Authority
TW
Taiwan
Prior art keywords
group
compound
resin
acid
cns
Prior art date
Application number
TW090100434A
Other languages
English (en)
Chinese (zh)
Inventor
Toshiaki Aoai
Yutaka Adegawa
Morio Yagihara
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of TWI289238B publication Critical patent/TWI289238B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
TW090100434A 2000-01-13 2001-01-09 Negative resist compositions using for electronic irradiation TWI289238B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000004766 2000-01-13
JP2000084469 2000-03-24

Publications (1)

Publication Number Publication Date
TWI289238B true TWI289238B (en) 2007-11-01

Family

ID=26583449

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090100434A TWI289238B (en) 2000-01-13 2001-01-09 Negative resist compositions using for electronic irradiation

Country Status (4)

Country Link
US (1) US6824948B1 (US06824948-20041130-C00056.png)
EP (1) EP1117004A3 (US06824948-20041130-C00056.png)
KR (1) KR100733847B1 (US06824948-20041130-C00056.png)
TW (1) TWI289238B (US06824948-20041130-C00056.png)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7022455B2 (en) * 2001-12-28 2006-04-04 Shipley Company, L.L.C. Photoacid-labile polymers and photoresists comprising same
US7083892B2 (en) * 2002-06-28 2006-08-01 Fuji Photo Film Co., Ltd. Resist composition
JP4090307B2 (ja) 2002-08-22 2008-05-28 富士フイルム株式会社 平版印刷版の作製方法
JP4480141B2 (ja) 2004-06-28 2010-06-16 キヤノン株式会社 インクジェット記録ヘッドの製造方法
TWI494697B (zh) 2004-12-24 2015-08-01 Mitsubishi Gas Chemical Co 光阻用化合物
KR100904068B1 (ko) 2007-09-04 2009-06-23 제일모직주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
US9469941B2 (en) 2011-07-01 2016-10-18 Empire Technology Development Llc Paraben derivatives for preserving cellulosic materials
US11635688B2 (en) * 2012-03-08 2023-04-25 Kayaku Advanced Materials, Inc. Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
JP5850873B2 (ja) * 2012-07-27 2016-02-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
JP6438645B2 (ja) * 2013-09-26 2018-12-19 富士フイルム株式会社 感活性光線性又は感放射線性組成物、並びに、これを用いた、レジスト膜、パターン形成方法、レジスト塗布マスクブランクス、フォトマスクの製造方法、及び電子デバイスの製造方法
CN106687864B (zh) * 2014-11-26 2020-07-03 日立化成株式会社 感光性树脂组合物、感光性元件、固化物、半导体装置、抗蚀图案的形成方法及电路基材的制造方法
CN112558409B (zh) * 2019-09-25 2022-05-20 常州强力先端电子材料有限公司 能够在i线高产酸的磺酰亚胺类光产酸剂

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US4621043A (en) 1983-01-31 1986-11-04 E. I. Du Pont De Nemours And Company Storage stable photopolymerizable composition
US4857437A (en) * 1986-12-17 1989-08-15 Ciba-Geigy Corporation Process for the formation of an image
JPH01168723A (ja) 1987-12-24 1989-07-04 Hitachi Chem Co Ltd 感光性樹脂組成物
US5180653A (en) * 1988-11-28 1993-01-19 Tokyo Ohka Kogyo Co., Ltd. Electron beam-curable resist composition and method for fine patterning using the same
JP2505033B2 (ja) * 1988-11-28 1996-06-05 東京応化工業株式会社 電子線レジスト組成物及びそれを用いた微細パタ―ンの形成方法
US5124234A (en) * 1989-01-20 1992-06-23 Fuji Photo Film Co., Ltd. Liquid light-sensitive resin composition
JP2554276B2 (ja) * 1989-01-20 1996-11-13 富士写真フイルム株式会社 液状感光性樹脂組成物
IL94474A (en) 1989-06-09 1993-07-08 Morton Int Inc Photoimageable compositions
JP2873126B2 (ja) 1991-04-17 1999-03-24 日本ペイント株式会社 体積ホログラム記録用感光性組成物
DE69402232T2 (de) * 1993-02-26 1997-09-18 Ibm Universaler negativ arbeitender Photoresist
JP3279059B2 (ja) 1993-06-02 2002-04-30 住友化学工業株式会社 フォトレジスト組成物
JP3424357B2 (ja) 1994-11-29 2003-07-07 住友化学工業株式会社 電子線用化学増幅ネガ型レジスト組成物
DE69631709T2 (de) 1995-03-16 2005-02-10 Shipley Co., L.L.C., Marlborough Strahlungsempfindliche Zusammensetzung, die ein Polymer mit Schutzgruppen enthält
JP3506817B2 (ja) * 1995-07-26 2004-03-15 クラリアント インターナショナル リミテッド 放射線感応性組成物
JP3520643B2 (ja) 1995-12-14 2004-04-19 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
JP3780569B2 (ja) 1996-06-20 2006-05-31 Ｊｓｒ株式会社 ＫｒＦエキシマレーザー照射用化学増幅型ネガ型レジスト
US5858618A (en) 1996-12-02 1999-01-12 Nan Ya Plastics Corporation Photopolymerizable resinous composition
US6140019A (en) * 1997-07-24 2000-10-31 Jsr Corporation Radiation sensitive composition
JP4282783B2 (ja) * 1997-12-16 2009-06-24 Ｊｓｒ株式会社 カラーフィルタ用感放射線性組成物
US6338936B1 (en) * 1998-02-02 2002-01-15 Taiyo Ink Manufacturing Co., Ltd. Photosensitive resin composition and method for formation of resist pattern by use thereof
US6630285B2 (en) * 1998-10-15 2003-10-07 Mitsui Chemicals, Inc. Positive sensitive resin composition and a process for forming a resist pattern therewith

Also Published As

Publication number Publication date
EP1117004A3 (en) 2003-08-13
US6824948B1 (en) 2004-11-30
KR100733847B1 (ko) 2007-06-29
KR20010088315A (ko) 2001-09-26
EP1117004A2 (en) 2001-07-18

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