TWI288862B - Method for manufacturing a microstructure, exposure device, and electronic apparatus - Google Patents
Method for manufacturing a microstructure, exposure device, and electronic apparatus Download PDFInfo
- Publication number
- TWI288862B TWI288862B TW094117695A TW94117695A TWI288862B TW I288862 B TWI288862 B TW I288862B TW 094117695 A TW094117695 A TW 094117695A TW 94117695 A TW94117695 A TW 94117695A TW I288862 B TWI288862 B TW I288862B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- exposure
- laser
- photosensitive film
- laser beams
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 95
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 18
- 230000001678 irradiating effect Effects 0.000 claims abstract 5
- 230000008569 process Effects 0.000 claims description 55
- 230000003287 optical effect Effects 0.000 claims description 31
- 239000004973 liquid crystal related substance Substances 0.000 claims description 30
- 238000011161 development Methods 0.000 claims description 25
- 238000009826 distribution Methods 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 230000001681 protective effect Effects 0.000 claims description 13
- 206010070834 Sensitisation Diseases 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 230000008313 sensitization Effects 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 204
- 239000000758 substrate Substances 0.000 description 76
- 229910052751 metal Inorganic materials 0.000 description 42
- 239000002184 metal Substances 0.000 description 42
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 239000010409 thin film Substances 0.000 description 20
- 230000006870 function Effects 0.000 description 15
- 230000010287 polarization Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052770 Uranium Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- -1 acryl group Chemical group 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000006552 photochemical reaction Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- SXPGQGNWEWPWQZ-UHFFFAOYSA-N 4-(triethoxymethyl)dodecan-1-amine Chemical compound NCCCC(C(OCC)(OCC)OCC)CCCCCCCC SXPGQGNWEWPWQZ-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000029087 digestion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D29/00—Independent underground or underwater structures; Retaining walls
- E02D29/16—Arrangement or construction of joints in foundation structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D29/00—Independent underground or underwater structures; Retaining walls
- E02D29/045—Underground structures, e.g. tunnels or galleries, built in the open air or by methods involving disturbance of the ground surface all along the location line; Methods of making them
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
- G02B6/02057—Optical fibres with cladding with or without a coating comprising gratings
- G02B6/02076—Refractive index modulation gratings, e.g. Bragg gratings
- G02B6/02123—Refractive index modulation gratings, e.g. Bragg gratings characterised by the method of manufacture of the grating
- G02B6/02133—Refractive index modulation gratings, e.g. Bragg gratings characterised by the method of manufacture of the grating using beam interference
- G02B6/02138—Refractive index modulation gratings, e.g. Bragg gratings characterised by the method of manufacture of the grating using beam interference based on illuminating a phase mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D2200/00—Geometrical or physical properties
- E02D2200/12—Geometrical or physical properties corrugated
-
- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
- E02D2600/00—Miscellaneous
- E02D2600/20—Miscellaneous comprising details of connection between elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
- G02B6/02057—Optical fibres with cladding with or without a coating comprising gratings
- G02B6/02076—Refractive index modulation gratings, e.g. Bragg gratings
- G02B6/02123—Refractive index modulation gratings, e.g. Bragg gratings characterised by the method of manufacture of the grating
- G02B6/02133—Refractive index modulation gratings, e.g. Bragg gratings characterised by the method of manufacture of the grating using beam interference
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Paleontology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Structural Engineering (AREA)
- Civil Engineering (AREA)
- Mining & Mineral Resources (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- General Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004245161 | 2004-08-25 | ||
| JP2004245169 | 2004-08-25 | ||
| JP2004245177 | 2004-08-25 | ||
| JP2005010420A JP4389791B2 (ja) | 2004-08-25 | 2005-01-18 | 微細構造体の製造方法および露光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200608152A TW200608152A (en) | 2006-03-01 |
| TWI288862B true TWI288862B (en) | 2007-10-21 |
Family
ID=35478587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094117695A TWI288862B (en) | 2004-08-25 | 2005-05-30 | Method for manufacturing a microstructure, exposure device, and electronic apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7867692B2 (enExample) |
| EP (1) | EP1630612A3 (enExample) |
| JP (1) | JP4389791B2 (enExample) |
| KR (1) | KR100693024B1 (enExample) |
| TW (1) | TWI288862B (enExample) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090068597A1 (en) * | 2005-01-14 | 2009-03-12 | Naomasa Shiraishi | Exposure method and apparatus, and electronic device manufacturing method |
| WO2006090807A1 (ja) * | 2005-02-25 | 2006-08-31 | Nikon Corporation | 露光方法および装置、ならびに電子デバイス製造方法 |
| JP2006339359A (ja) * | 2005-06-01 | 2006-12-14 | Seiko Epson Corp | 微細構造体の製造方法、電子機器 |
| US20070153249A1 (en) * | 2005-12-20 | 2007-07-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method using multiple exposures and multiple exposure types |
| KR100871059B1 (ko) * | 2006-03-28 | 2008-11-27 | 주식회사 엘지화학 | 나노 패턴 형성 방법 및 이에 의하여 형성된 패턴을 갖는기판 |
| JP2009531734A (ja) * | 2006-03-28 | 2009-09-03 | エルジー・ケム・リミテッド | ナノパターン形成方法およびこれによって形成されたパターンを有する基板 |
| US8934084B2 (en) * | 2006-05-31 | 2015-01-13 | Asml Holding N.V. | System and method for printing interference patterns having a pitch in a lithography system |
| US7626185B2 (en) * | 2006-08-11 | 2009-12-01 | Battelle Memorial Institute | Patterning compositions, masks, and methods |
| JP5145673B2 (ja) * | 2006-08-30 | 2013-02-20 | 住友電気工業株式会社 | レーザ加工方法およびレーザ加工装置 |
| JP4269295B2 (ja) | 2007-02-20 | 2009-05-27 | セイコーエプソン株式会社 | 微細構造体の製造方法 |
| US8431328B2 (en) * | 2007-02-22 | 2013-04-30 | Nikon Corporation | Exposure method, method for manufacturing flat panel display substrate, and exposure apparatus |
| US7768627B2 (en) * | 2007-06-14 | 2010-08-03 | Asml Netherlands B.V. | Illumination of a patterning device based on interference for use in a maskless lithography system |
| KR100881140B1 (ko) | 2007-08-09 | 2009-02-02 | 삼성전기주식회사 | 나노패턴 형성장치 및 이를 이용한 나노패턴 형성방법 |
| US8582079B2 (en) * | 2007-08-14 | 2013-11-12 | Applied Materials, Inc. | Using phase difference of interference lithography for resolution enhancement |
| US20090111056A1 (en) * | 2007-08-31 | 2009-04-30 | Applied Materials, Inc. | Resolution enhancement techniques combining four beam interference-assisted lithography with other photolithography techniques |
| US20100002210A1 (en) * | 2007-08-31 | 2010-01-07 | Applied Materials, Inc. | Integrated interference-assisted lithography |
| US20090117491A1 (en) * | 2007-08-31 | 2009-05-07 | Applied Materials, Inc. | Resolution enhancement techniques combining interference-assisted lithography with other photolithography techniques |
| WO2009032815A1 (en) * | 2007-09-06 | 2009-03-12 | 3M Innovative Properties Company | Tool for making microstructured articles |
| JP5951928B2 (ja) * | 2007-09-06 | 2016-07-13 | スリーエム イノベイティブ プロパティズ カンパニー | 光出力の領域制御を提供する光抽出構造体を有する光ガイド |
| EP2197646B1 (en) | 2007-09-06 | 2011-11-23 | 3M Innovative Properties Company | Methods of forming molds and methods of forming articles using said molds |
| NL1035920A1 (nl) * | 2007-09-26 | 2009-03-30 | Asml Netherlands Bv | Lithographic System, Lithographic Apparatus and Device Manufacturing Method. |
| CN101821659B (zh) | 2007-10-11 | 2014-09-24 | 3M创新有限公司 | 色差共聚焦传感器 |
| WO2009075970A1 (en) | 2007-12-12 | 2009-06-18 | 3M Innovative Properties Company | Method for making structures with improved edge definition |
| JP5801558B2 (ja) * | 2008-02-26 | 2015-10-28 | スリーエム イノベイティブ プロパティズ カンパニー | 多光子露光システム |
| JP2010182934A (ja) * | 2009-02-06 | 2010-08-19 | Dainippon Screen Mfg Co Ltd | 描画装置および描画方法 |
| JP5842615B2 (ja) * | 2010-02-03 | 2016-01-13 | 株式会社ニコン | 照明光学装置、照明方法、並びに露光方法及び装置 |
| JP2011218398A (ja) * | 2010-04-08 | 2011-11-04 | Fujikura Ltd | 微細構造の形成方法、レーザー照射装置、及び基板 |
| JP5300799B2 (ja) * | 2010-07-28 | 2013-09-25 | 株式会社東芝 | パターン形成方法及びポリマーアロイ下地材料 |
| KR101385070B1 (ko) * | 2010-12-24 | 2014-04-15 | 한국생산기술연구원 | 레이저간섭 노광을 이용한 대면적 미세패턴 제작 방법, 상기 방법을 이용하여 제작된 미세패턴의 비평면적 전사 방법 및 이를 이용하여 미세 패턴을 전사한 물품 |
| US9104118B2 (en) * | 2011-12-09 | 2015-08-11 | Hitachi High-Technologies Corporation | Exposure device and method for producing structure |
| TWI546518B (zh) * | 2012-04-20 | 2016-08-21 | 德律科技股份有限公司 | 三維量測系統與三維量測方法 |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| JP6221849B2 (ja) * | 2014-03-07 | 2017-11-01 | ウシオ電機株式会社 | 露光方法、微細周期構造体の製造方法、グリッド偏光素子の製造方法及び露光装置 |
| KR102246872B1 (ko) | 2014-07-29 | 2021-04-30 | 삼성전자 주식회사 | 포커스 계측 마크를 포함하는 포토마스크, 포커스 모니터 패턴을 포함하는 계측용 기판 타겟, 노광 공정 계측 방법, 및 집적회로 소자의 제조 방법 |
| KR102235615B1 (ko) | 2014-07-29 | 2021-04-02 | 삼성전자주식회사 | 노광 공정 계측용 기판 타겟 및 노광 공정 계측 방법과 이를 이용한 집적회로 소자의 제조 방법 |
| JP6547283B2 (ja) * | 2014-12-02 | 2019-07-24 | ウシオ電機株式会社 | 基板上構造体の製造方法 |
| JP6528394B2 (ja) * | 2014-12-02 | 2019-06-12 | ウシオ電機株式会社 | 基板上構造体の製造方法 |
| JP6609917B2 (ja) * | 2014-12-02 | 2019-11-27 | ウシオ電機株式会社 | 蛍光光源用発光素子の製造方法 |
| DE102015214960B4 (de) * | 2015-08-05 | 2018-03-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Interferenzstrukturierung einer Oberfläche einer flächigen Probe und deren Verwendung |
| JP2017054006A (ja) * | 2015-09-09 | 2017-03-16 | ウシオ電機株式会社 | 光照射方法、基板上構造体の製造方法および基板上構造体 |
| JP6953109B2 (ja) | 2015-09-24 | 2021-10-27 | ウシオ電機株式会社 | 基板上構造体の製造方法 |
| WO2017051443A1 (ja) | 2015-09-24 | 2017-03-30 | ウシオ電機株式会社 | 露光方法、微細周期構造体の製造方法、グリッド偏光素子の製造方法及び露光装置 |
| WO2017063040A1 (en) * | 2015-10-13 | 2017-04-20 | Bilinsky Henry Claudius | Microstructure patterns |
| DE102017206968B4 (de) * | 2017-04-26 | 2019-10-10 | 4Jet Microtech Gmbh & Co. Kg | Verfahren und Vorrichtung zum Herstellen von Riblets |
| KR102735569B1 (ko) * | 2019-09-26 | 2024-11-29 | 주식회사 엘지화학 | 화각 제어용 복합구조필름의 제조방법, 이를 이용한 화각 제어용 복합구조필름 및 이를 이용한 영상표시장치 |
| KR102742638B1 (ko) * | 2019-09-26 | 2024-12-16 | 주식회사 엘지화학 | 화각 제어용 복합구조필름, 이의 제조방법 및 이를 이용한 영상표시장치 |
| CN112835263B (zh) * | 2019-11-22 | 2024-05-24 | 北京理工大学 | 一种液晶计算全息图的单步曝光方法及装置 |
| CN112731776B (zh) * | 2021-01-14 | 2023-06-20 | 之江实验室 | 一种双掩膜高通量激光超分辨激光直写方法和装置 |
| CN112965288B (zh) * | 2021-02-02 | 2022-04-26 | 深圳市华星光电半导体显示技术有限公司 | 内置偏光片的制备方法及偏光片 |
| LU102920B1 (de) * | 2022-03-31 | 2023-10-02 | Fusion Bionic Gmbh | Vorrichtung und Verfahren zur Laserinterferenzstrukturierung von Substraten mit periodischen Punktstrukturen für Antireflexionseigenschaften |
| KR20240031352A (ko) * | 2021-07-03 | 2024-03-07 | 퓨전 바이오닉 게엠베하 | 반사 방지 속성을 위한 주기적인 도트 구조를 갖는 기판의 레이저 간섭 구조화를 위한 장치 및 방법 |
| KR102811416B1 (ko) * | 2021-12-30 | 2025-05-26 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| CN120188590A (zh) | 2022-09-02 | 2025-06-20 | 福森仿生有限公司 | 图案化的光电子器件 |
| LU103058B1 (de) * | 2023-01-05 | 2024-07-05 | Fusion Bionic Gmbh | Oberflächenstrukturiertes substrat mit einem schwarzmarkierungsbereich |
| CN118795737B (zh) * | 2024-06-25 | 2025-02-14 | 浙江大学 | 一种基于电光高速移相的干涉超分辨光刻系统和方法 |
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| US579744A (en) * | 1897-03-30 | Hat beim curling machine | ||
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| US4996120A (en) * | 1988-12-29 | 1991-02-26 | E. I. Dupont De Nemours And Company | Holographic photopolymer compositions and elements containing a ring-opening monomer |
| JP2936187B2 (ja) | 1991-12-16 | 1999-08-23 | 株式会社ニコン | レジストパタ−ンの形成方法 |
| US5415835A (en) * | 1992-09-16 | 1995-05-16 | University Of New Mexico | Method for fine-line interferometric lithography |
| JPH06300909A (ja) | 1993-04-13 | 1994-10-28 | Canon Inc | ホログラフィック干渉露光法を用いた回折格子作成方法及びこれを用いた光半導体装置 |
| JPH07159609A (ja) | 1993-12-09 | 1995-06-23 | Matsushita Electric Ind Co Ltd | 回折格子及び干渉露光装置 |
| JP3379200B2 (ja) | 1994-03-25 | 2003-02-17 | 株式会社ニコン | 位置検出装置 |
| US5759744A (en) * | 1995-02-24 | 1998-06-02 | University Of New Mexico | Methods and apparatus for lithography of sparse arrays of sub-micrometer features |
| US5885753A (en) * | 1996-04-12 | 1999-03-23 | The Texas A&M University System | Polymeric self-assembled mono- and multilayers and their use in photolithography |
| JPH1126344A (ja) | 1997-06-30 | 1999-01-29 | Hitachi Ltd | パターン形成方法及び装置並びに半導体装置の製造方法 |
| US6218292B1 (en) * | 1997-12-18 | 2001-04-17 | Advanced Micro Devices, Inc. | Dual layer bottom anti-reflective coating |
| EP0939343A1 (en) | 1998-02-26 | 1999-09-01 | Canon Kabushiki Kaisha | Exposure method and exposure apparatus |
| US6074800A (en) * | 1998-04-23 | 2000-06-13 | International Business Machines Corporation | Photo acid generator compounds, photo resists, and method for improving bias |
| JP3421673B2 (ja) | 1998-06-02 | 2003-06-30 | 学校法人立命館 | 超微細パターンの並列的製造方法 |
| US6243348B1 (en) * | 1998-06-05 | 2001-06-05 | Massachusetts Institute Of Technology | Very-high-density memory device utilizing a scintillating data-storage medium |
| US6140660A (en) * | 1999-03-23 | 2000-10-31 | Massachusetts Institute Of Technology | Optical synthetic aperture array |
| US6122103A (en) * | 1999-06-22 | 2000-09-19 | Moxtech | Broadband wire grid polarizer for the visible spectrum |
| TW445512B (en) | 1999-07-13 | 2001-07-11 | Lee Chih Kung | Processing technology to define pattern by combining two coherent light beams and using interference to proceed multiple direct exposure |
| JP2001033982A (ja) * | 1999-07-15 | 2001-02-09 | Nec Corp | レジストパターンの形成方法 |
| US6243199B1 (en) * | 1999-09-07 | 2001-06-05 | Moxtek | Broad band wire grid polarizing beam splitter for use in the visible wavelength region |
| US6882477B1 (en) * | 1999-11-10 | 2005-04-19 | Massachusetts Institute Of Technology | Method and system for interference lithography utilizing phase-locked scanning beams |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| JP3605041B2 (ja) * | 2001-01-26 | 2004-12-22 | キヤノン株式会社 | 露光方法及び装置、デバイス製造方法、並びに、デバイス |
| US20060109532A1 (en) * | 2004-11-19 | 2006-05-25 | Savas Timothy A | System and method for forming well-defined periodic patterns using achromatic interference lithography |
-
2005
- 2005-01-18 JP JP2005010420A patent/JP4389791B2/ja not_active Expired - Fee Related
- 2005-04-29 KR KR1020050035816A patent/KR100693024B1/ko not_active Expired - Fee Related
- 2005-05-30 TW TW094117695A patent/TWI288862B/zh not_active IP Right Cessation
- 2005-06-16 US US11/153,553 patent/US7867692B2/en not_active Expired - Fee Related
- 2005-07-21 EP EP05015880A patent/EP1630612A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US7867692B2 (en) | 2011-01-11 |
| JP2006093644A (ja) | 2006-04-06 |
| EP1630612A3 (en) | 2007-09-19 |
| TW200608152A (en) | 2006-03-01 |
| JP4389791B2 (ja) | 2009-12-24 |
| KR20060047608A (ko) | 2006-05-18 |
| US20060046156A1 (en) | 2006-03-02 |
| KR100693024B1 (ko) | 2007-03-12 |
| EP1630612A2 (en) | 2006-03-01 |
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