TWI287853B - Method and apparatus for depositing a metal film on a substrate - Google Patents
Method and apparatus for depositing a metal film on a substrate Download PDFInfo
- Publication number
- TWI287853B TWI287853B TW090109943A TW90109943A TWI287853B TW I287853 B TWI287853 B TW I287853B TW 090109943 A TW090109943 A TW 090109943A TW 90109943 A TW90109943 A TW 90109943A TW I287853 B TWI287853 B TW I287853B
- Authority
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- Taiwan
- Prior art keywords
- substrate
- module
- acid
- metal film
- film layer
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 82
- 239000002184 metal Substances 0.000 title claims abstract description 82
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- 238000000151 deposition Methods 0.000 title claims abstract description 43
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- 238000001465 metallisation Methods 0.000 claims abstract description 65
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
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- H—ELECTRICITY
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- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
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Description
1287853 A7 B7 五、發明説明(1 ) 〔發明領域〕 :---·—^^衣-- (請先閱讀背面之注意事項再填寫本頁) 本發明係關於膜層的沉積的領域。更特定地,本發明 係關於沉積膜層於一基材上的領域,其中一早先的處理步 驟包括反吸收或預淸潔該基材。 〔發明背景〕 在半導體製程中沉積一金屬膜層通常在該金屬膜層的 沉積之前都需要反吸收及預淸潔步驟。該反吸收及預淸潔 步驟可確保該金屬膜層對於一基材有良好的粘著性且亦在 基材金屬與金屬膜層之間提供較佳的接觸電阻。 在前技中,該反吸收步驟,該預淸潔步驟,及金屬膜 層的沉積是在一群串工具中進行的,使得基材在反吸收或 預淸潔步驟與該金屬膜層的沉積之間不會曝露於大氣中。 經濟部智慧財產局員工消費合作社印製 前技的反吸收步驟在真空中對該基材加熱用以將該基 材去氣(degas)。藉由在真空中加熱該基材,被吸收於該基 材的表面中或被吸收至該基材內的物質可從該基材中被去 除。典型的處理條件包括1(Τ3托爾(Torr)或更高的真空,及 介於200至400 °C之間的溫度。通常,較高的溫度被使用, 以縮短處理時間,對於較高的溫度而言,處理時間大致上 是在30秒至60秒之間。 前技的預淸潔步驟將該基材曝露於離子轟擊中,其通 常被稱爲一濺射蝕刻預淸潔。在該濺射蝕刻預淸潔中,氬 離子,氫離子,氨離子,或它們的組合,及電子形成一電 漿,其轟擊該基材的表面用以將一薄的物質層濺射掉。典 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -4
1287853 五、發明説明(2 ) (請先閱讀背面之注意事項再填寫本頁) 型地,在半導體製程中,一蝕刻步驟在該金屬膜層的沉積 之前。該蝕刻步驟形成溝渠及介電孔於該基材內到達一底 下的金屬層。在蝕刻步驟之後,因爲該基材曝露於大氣中 的關係,一氧化物形成於在該等孔處之該底下的金屬層的 一被曝露的表面上。該濺射蝕刻預淸潔嘗試將該氧化物及 在去灰(ashing)及濕式淸潔之後的任何殘留物鈾刻掉。該職 射蝕刻預淸潔典型地需要1〇·3托爾(Ton·)或更高的真空。 經濟部智慧財產局員工消費合作社印製 前技的一特定的金屬沉積處理沉積一阻障金屬層及一 銅晶種層於一半導體基材上與在介電孔(via hole)處的底下 銅層形成接點。在該蝕刻步驟中,介電孔被形成穿透二氧 化矽及氮化矽層到達該底下的銅層。在前技的另一蝕刻步 驟中,該等介電孔被形成於低k的介電材質中,如一聚合 物基的材質及含氟或碳的氧化物。在鈾刻步驟之後及在基 屬膜層的沉積之前,一電漿去灰步驟及一濕式淸潔步驟可 大致上將光阻,光阻殘留物,及鈾刻殘留物去除掉留下被 吸收至該基材表面上的物質及留下一層薄的氧化銅層於該 等介電孔處的底下銅層之上。前技的反吸收步驟將被吸收 於該基材的表面內之物質去除掉。該濺射蝕刻預淸潔將介 電孔內的氧化銅層去除掉並去除掉該基材之包圍在該等介 電孔周圍的一裸露層。該阻障金屬然後被沉積,接著銅晶 種層被沉積。接下來,一電鍍步驟沉積額外的銅層至該銅 晶種層上。 前技的群束工具包括一離手站(ha n doff station),一前 端輸送模組,一後端輸送模組,一去氣模組,一濺射鈾刻 -5- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 1287853 A7 B7 五、發明説明(3 ) 模組,及一金屬沉積模組。該前端輸送模組包括一第一機 器人。該後端輸送模組包括一第二機器人。該離手站藉由 一第一閥或負載鎖定件而耦合至該前端輸送模組。該去氣 模組及濺射鈾刻模組係耦合至該前端輸送模組。該後端輸 送模組藉由一第二閥或負載鎖定而耦合至該前端輸送模組 。該金屬沉積模組係耦合至該後端輸送模組。通常,該群 束工具包括兩個去氣模組,兩個濺射蝕刻模組,及兩個或 更多的金屬沉積模組。在操作時,該前端輸送模組在真空 下操作。一用來實施前技的反吸收,預淸潔及金屬沉積的 第二群束工具包括一單一的輸送模組,該去氣模組,該濺 射蝕刻模組,及該金屬沉積模組,其中該去氣模組,該濺 射蝕刻模組,及該金屬沉積模組係耦合至該單一的輸送模 組。 該群束工具的操作是以該第一機器人將一基材從該離 手站送至實施該反吸收步驟之去氣模組來開始。該第一機 器人然後將該基材輸送至實施該濺射蝕刻預淸潔的該濺射 蝕刻模組。該第一機器人然後將該基材輸送至該第二機器 人,該第二機器人將該基材置於該金屬沉積模組中。在該 金屬膜層沉積之後,該第二機器人將該基材輸送回該第一 機器人,其將該基材送回到該離手站。 因爲前技的反吸收步驟是在高溫下操作的,所以存在 著溫度所誘發的基材損壞的可能。此顧慮對於聚合物材質 特別容易發生,因爲聚合物材質之低介電常數的特性,所 以未來的積體電路可能會使用聚合物材質作爲絕緣體。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 一 :---,—衣-- (請先閲讀背面之注意事項再填寫本頁} 訂 經濟部智慧財產局員工消費合作社印製 1287853 A7 —_B7 _^ 五、發明説明(4 ) 在該預淸潔步驟中,該電漿會對該基材的表面造成電 漿損害。而且,濺射蝕刻預淸潔會在溝渠的邊緣及在介電 孔的邊緣造成角落修剪(corner clipping)而產生缺陷是眾所 習知的。角落修剪對於較小尺寸的積體電路而言特別有害 ,因爲角落修剪減少相鄰接線之間的隔離而導致相鄰接線 之間無法被接受的電子干擾。濺射鈾刻不只造成積體電路 實體上的損害,其亦造成電子損害。 再者,在溝渠及介電孔內之底下金屬層的濺射會造成 圓桶化(barreling)及造成被濺射的物質沉積於溝渠及介電孔 的側壁上。例如,在介電孔內之氧化銅層的濺射蝕刻預淸 潔造成銅及氧化銅沉積於介電孔的側壁上。甚者,對於預 淸潔聚合物基的物質而言濺射蝕刻預淸潔是不恰當的,因 爲可預期到在濺射蝕刻預淸潔中之實體的轟擊會造成損傷 。而且,即使濺射蝕刻預淸潔可被使用,氫離子在聚合物 物質被曝露時無法被使用,因爲氫會將聚合物基的物質氫 化。此外,該濺射蝕刻預淸潔在溝渠或介電孔的深寬比(深 度除以寬度)增大時即會變得較沒有效果。 經濟部智慧財產局員工消費合作社印製 C请先閱讀背面之注意事項再填寫本頁) 去氣模組與濺射蝕刻模組兩者都需要高真空幫浦及相 關的真空管路,這將增加該群束工具的購製及維修成本。 該濺射蝕刻模組進一步增加該群束工具的購製及維修成本 ,因爲其相對複雜且經常的維修用以確保其不會成爲一顆 粒污染物的來源。 一種可與金屬沉積相容的反吸收方法是所需要的,該 .方法不需過高的溫度。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X:297公釐Ί " ~ 1287853 A7 B7 五、發明説明(5 ) 一種可與金屬沉積相容的預淸潔方法是所需要的,該 方法不使用電漿。 一種可與低k物質,如聚合物基的材質及含氟或碳的 氧化物,相容的反吸收方法是所需要的。 一種可與低k物質,如聚合物基的材質及含氟或碳的 氧化物,相容的預淸潔方法是所需要的。 一種可與金屬沉積相容的反吸收方法是所需要的,該 方法較便宜。 一種可與金屬沉積相容的預淸潔方法是所需要的,該 方法較便宜。 〔發明槪要〕 一種將一金屬膜層沉積於一基材上的方法包括一超臨 界預淸潔步驟,一超臨界反吸收(desorb)步驟,及一金屬沉 積步驟。最好是,該預淸潔步驟包含保持超臨界二氧化碳 及一螯合劑與該基材接觸用以從該基材的一金屬表面上去 除氧化層。更佳的是,該預淸潔步驟包含保持超臨界二氧 化碳,該螯合劑,及一酸與該基材接觸其中該酸溶解該氧 化層同時該螯合劑附著用以釋出金屬離子並將釋出的金屬 離子帶走。或者,該預淸潔步驟包含保持該超臨界二氧化 碳及一胺與該氧化層接觸,其中該J安溶解該氧化層並帶走 金屬離子。該反吸收步驟包含保持該超臨界二氧化碳與該 基材接觸用以從該基材中去除被吸收的物質。該金屬沉積 步驟然後將該金屬膜層沉積於該基材上,此沉積不需將該 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -8 J---.I^^裝-- (請先閱讀背面之注意事項再填寫本頁) 、11 d 經濟部智慧財產局員工消費合作社印製 1287853 A7 B7 五、發明説明(6 ) s材曝露於一會將該被預淸潔的基材的金屬表面氧化的氧 化材質中及不需將該基材曝露於會吸附於該基材上的一非 揮發性吸附材質中。 一用來將一金屬膜層沉積於一基材上的設備包括一輸 送模組,一超臨界處理模組,一真空模組,及一金屬沉積 模組。該超臨界處理模組被耦合至該輸送模組。該真空模 組將該金屬沉積模組耦合至該輸送模組。在操作時,用來 沉積該金屬膜層的設備實施該超臨界預淸潔步驟,該超臨 界反吸收步驟,及該金屬沉積步驟。 〔圖式簡要說明〕 第1圖示意地顯示本發明之較佳的方法。 第2圖示意地顯示本發明的另一方法。 第3圖顯示本發明之較佳的金屬沉積群束工具。 〔符號說明〕 :---·I -- (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 20 較佳方法 22 超臨界預淸潔步驟 24 超臨界反吸收步驟 26 金屬沉積步驟 30 第四替代方法 32 超臨界殘留物去除步驟 40 較佳金屬沉積群束工具 42 裝載模組 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -9 - 以7853
66 68 70 72 經濟部智慧財產局員工消費合作社印製 A7 B7 前端輸送模組 前端輸送模組機器人 第一超臨界模組 第二超臨界模組 第三超臨界模組 第四超臨界模組 後端輸送模組 後端輸送模組機器人 第一金屬沉積模組 第二金屬沉積模組 第三金屬沉積模組 第四金屬沉積模組 第一負載鎖定件 第二負載鎖定件 裝載機器人 閥 第一前端開口單元莢 第二前端開口單元莢 半導體基材 〔最佳實施例詳細說明〕 本發明之較佳的方法被示意地示於第i圖中。此較佳 的方法20沉積一金屬膜層於一基材上。最好是,該基材爲 一半導體基材,其具有穿透一介電材質到達一底下的金屬 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)-1〇 - (請先閱讀背面之注意事項再填寫本頁)
1287853 A7 _____B7____ 五、發明説明(8 ) 層之介電孔。當該金屬膜層被沉積於該半導體基材上時 該金屬膜層在該等介電孔處與底下金屬層相接觸。更佳地 ,該半導體基材包括在一雙鑲嵌結構中之介電孔及溝渠。 在該雙鑲嵌結構中,該金屬膜層亦在該等介電孔處與底下 金屬層相接觸。或者,該金屬膜層被沉積於一替代的基材 上,其中該金屬膜層與該替代基材上之裸露的金屬表面相 接觸。 此較佳的方法20包含一超臨界預淸潔步驟22,一超臨 界反吸收步驟24,及一金屬沉積步驟26。在該超臨界預淸 潔步驟22中,該基材被保持在一超臨界室中且最好是被曝 露於超臨界二氧化碳及一螯合劑中。該超臨界二氧化碳及 螯合劑一起與在底下的金屬層上的一氧化物起反應用以,形 成底下金屬的螯合物。在超臨界反吸收步驟24中,該基材 被保持在該超臨界室內並被曝露於超臨界二氧化碳中,其 可從基材中釋出被吸收的物質。 更佳地,超臨界預淸潔步驟22包含將一酸及該超臨界 二氧化碳及該螯合劑保持與該基材接觸。該酸作用,以將 該氧化物溶解,同時該螯合劑附著用以釋出金屬離子並將 釋出的金屬離子帶走。 最好是,該螯合劑是從包含2,4-戊烷二酮,1,1, 1,6,6,6·六氟-2,4-戊烷二酮,1,1,1-三氟戊烷-2,4-二酮,2,6-六甲基庚烷-3,5-二酮,2,2,7-三 甲基辛院-2,4-二酮,2,2,6,6·四甲基庚烷-3,5·二 酮,乙烯二胺二醋酸(EDTA),及三價氮基三醋酸(NTA)的組 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -11 - K---‘I·裝-- (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 1287853 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(9 ) 群中所選取的。 最好是,該酸是依據將被預淸潔的特定氧化物而從包 含一有機酸或一無機酸的組群中選取的。最好是,有機酸 是被用於銅氧化物的預淸潔。更佳的是,對於銅氧化物而 言’該有機酸是從包含乙酸,甲酸,草酸及丙二酸;α-羥 基酸如羥乙酸,檸檬酸,蘋果酸或乳酸;或胺基酸如甘胺 酸’丙胺酸,白胺酸,錨胺酸,麩醯胺或維胺酸的組群中 所選取的。 最好是,該無機酸是用於氧化鋁的預淸潔。更佳的是 ’對氧化鋁的預淸潔而言,該無機酸是從包含氫氟酸及緩 衝的氫氟酸公式如氟化銨及二氟化胺的組群中所選取的。 或者,在預淸潔步驟22中,該螯合劑及酸被一胺所取 代。該胺作用以溶解該氧化物並帶走金屬離子。最好是, 該胺是從包含三乙醇胺,2-甲胺基乙醇,吡啶,2,2,-聯 吡啶,及五甲基二乙烯三胺的組群中所選取的。 在超臨界預猜潔步驟22中,該超臨界室最好是被加壓 至一超過臨界壓力的高壓及該超臨界二氧化碳與該螯合劑 被流至該基材上。更佳地,該超臨界二氧化碳,該螯合劑 及酸被流到該基材上。或者,該超臨界二氧化碳,及胺被 流到該基材上。 爲了要在該超臨界室內達到超臨界條件,在該室內的 溫度必需被保持在一臨界溫度(30.5 °C )或在臨界溫度之上。 此外,壓力在該高壓與一低壓之間被循環至少一又二分之 一次。最好是,該低壓是在該臨界壓力之上。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _、2: I ----„---IT------l· (請先閱讀背面之注意事項再填寫本頁) 1287853 A7 B7______ 五、發明説明(1〇 ) (請先閱讀背面之注意事項再填寫本頁) 該超臨界反吸收步驟24最好是該超臨界預淸潔步^驟22 的一部分。被吸收至該基材上或被吸收至該基材內的^ M 及液體將於該預淸潔步驟22期間被反吸收。將該室內的溫 度升高被預期可改善該超臨界反吸收步驟24。或者,該超 臨界反吸收步驟24如一獨立的步驟地於該超臨界預淸潔步 驟22之前或之後被實施。 最好是,超臨界預淸潔及反吸收步驟22及24期間’該 室內的溫度是在31 °C至100 °C之間。或者,該室內的溫度 被保持在該基材的溫度限制之下。 該金屬沉積步驟26包含將該金屬膜層沉積於該基材上 。最好是,該基材包括到達該底下的金屬層之介電孔。該 金屬沉積步驟26最好是將金屬膜層沉積至介電孔內使得金 屬膜層與底下的金屬層接觸。最好是,該金屬沉積步驟26 爲化學氣相沉積(CVD)處理。或者,該金屬沉積步驟26爲 物理氣相沉積(PVD)處理)。 經濟部智慧財產局員工消費合作社印製 在該超臨界預淸潔,超臨界反吸收,及金屬沉積步驟 22,24及26之間,該基材沒有被曝露於大氣中或其它會在 該基材上形成一非揮發性吸收物,不會在該基材內形成非 揮發性吸收物,或會於基材反應的氣體中,是很重要的。 在基材上形成揮發性吸收物是無害的,因爲在該超臨界預 淸潔步驟22或在該超臨界反吸收步驟24的終了短暫地曝露 於真空下可將該揮發性吸收物快速地從該基材上去除掉。 最好是,在該超臨界預淸潔,超臨界反吸收,及金屬沉積 步驟22,24及26之間,該基材被保持在真空下。或者, 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ΓΊΤΙ _ ~ '— 1287853 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(彳1 ) 在該超臨界預淸潔,超臨界反吸收,及金屬沉積步驟22 , 24及26之間,該基材都被保持在一鈍氣的氛圍中,其中該 鈍氣氛圍既不會形成非揮發性吸收物亦不會形成揮發性吸 收物。 藉由使用超臨界預淸潔步驟22而非濺射蝕刻預淸潔步 驟,因而可避免基材的電漿損傷。再者,藉由使用超臨界 預淸潔步驟22而非濺射蝕刻預淸潔步驟,因而可避免在溝 渠及介電孔邊緣處之角落修剪與切面的形成,可避免溝渠 及介電孔之圓筒化(barreling),及可避免被濺射的物質沉積 在溝渠及介電孔的側壁上。此外,使用超臨界預淸潔步驟 而非濺射蝕刻預淸潔步驟,因而可避免製造在該基材上之 積體電路的電子損傷。甚者,與濺射蝕刻預淸潔步驟比較 起來,該超臨界預淸潔步驟22對於聚合物基的介電材質造 成的傷害較小。 使用超臨界反吸收步驟24而非在真空下對基材加熱來 使基材去氣可避免在處理基材時使用過高的溫度’這對於 聚合物基的介電材質而言是特別重要的。 依據特定的處理需求,該超臨界預淸潔步驟22或該超 臨界反吸收步驟24可被省略。在本發明的一第一替代方法 中,該超臨界預淸潔步驟22及金屬沉積步驟26被實施’但 該超臨界反吸收步驟24則被省略。在本發明的一第二替代 方法中,該超臨界反吸收步驟24及金屬沉積步驟26被實施 ,但該超臨界預淸潔步驟22則被省略。在本發明的一第三 替代方法中,第二替代方法中之金屬沉積步驟26被一替代 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)-14 - (請先閱讀背面之注意事項再填寫本頁)
1287853 A7 ___B7 _ 五、發明説明(12 ) 沉積方法所取代。在該替代沉積方法中,一膜層,而非一 金屬膜層,被沉積於該基材上。 -----:----- (請先閲讀背面之注意事項再填寫本頁) 本發明的一第四替代方法被示意地示於第2圖中。該 第四替代方法30在較佳的方法20中添加一超臨界殘留物去 除步驟32。該超臨界殘留物去除步驟32將前一鈾刻步驟之 後留在該基材上殘留物去除掉。在該前一蝕刻步驟中,光 阻遮蔽一部分的基材使得只有沒有被遮蔽的基材部分被触 刻。此蝕刻步驟亦蝕刻該光阻。通常,在蝕刻步驟之後都 會有一些光阻殘留在該基材上且亦會有鈾刻殘留物及光阻 殘留物在基材上。因此,蝕刻步驟之後之留在該基材上之 殘留物包括了光阻殘留物,蝕刻殘留物,及殘餘的光阻。 該超臨界殘留物去除步驟32包含將帶有殘留物之基材曝露 於超臨界二氧化碳及一溶劑中直到該殘留物從該基材上被 去除爲止。該超臨界殘留物去除步驟32被詳細揭示於2000 年十月25日所提申之美國專利第09/697,227號中,該案內 容藉由此參照而被倂於本文中。 經濟部智慧財產局員工消費合作社印製 本發明之較佳的金屬沉積群束工具被示於第3圖中。 該較佳的金屬沉積群束工具40包含一裝載模42,一前端輸 送模組44 ’ 一*前端輸送模組機器人46 ’第一至第四超臨界 模組48-51 ,一後端輸送模組52 ’ 一後端輸送模組機器人 54,及第一至第四金屬沉積模組56-59。該裝載模組42包 含第一及第二負載鎖定件60及62 ’及一裝載機器人64。 該第一及第二負載鎖定件60及62包含一供該前端輸送模組 用的入口。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐1 ~^15 : ' 一 1287853 A7 B7 五、發明説明(13 ) (請先閱讀背面之注意事項再填寫本頁) 該裝載模42,前端輸送模組機器人46,第一至第四超 臨界模組48-51被耦合至該前端輸送模組44上。該後端輸 送模組5 2經由一閥6 6而被耦合至該前端模組。該後端模組 機器人54及第一至第四金屬沉積模組56-59被耦合至該後 端輸送模組52。 在操作時,應用一標準的機械界面(SMIF)槪念的第一 及第二前開口單元莢(F〇UP)68,70與該裝載模42相耦合。 最好是,第一莢68最初包含半導體基材72其在一濕式淸潔 處理中被鈾刻,去灰,及淸潔。該裝載機器人64將〜半導 體基材72從該第一莢68送到該第一負載鎖定件60。該負 載鎖定件60關閉並被被抽至真空。該負載鎖定件60然後被 開啓至同樣在真空下的該前端輸送模組46。該前端輸送模 組46將該半導體基材72送至該第一超臨界模48,該超臨 界預淸潔及反吸收步驟22及24(第1圖)於該模組中被實施 。同時,其它的半導體基材從第一莢經由該第一負載鎖定 件60被裝載至該第二至第三超臨界模組49-51 。或者該等 FOUP被SMIF或開放匣盒所取代。 經濟部智慧財產局員工消費合作社印製 當超臨界預淸潔及反吸收步驟22及24完成時,該半導 體基材72從該第一超臨界模組48通過閥66而被送至後端 輸送模組52。該後端輸送模組52亦在真空下操作。該後端 輸送模組機器人54然後將該半導體基材72送至該第一金屬 沉積模組56,該金屬沉積步驟26(第1圖)在該模組中實施 。同時,其它的半導體基材則從該第二至第三超臨界模組 49-51被送至該第二至第三金屬沉積模組57-59。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -16- ^ 1287853 A7 B7 五、發明説明(14 ) (請先閲讀背面之注意事項再填寫本頁) 當該金屬沉積步驟26完成時,該半導體基材72從該第 一金屬沉積模組56被該第二輸送模組機器人54送至該第一 輸送模組機器人46。該第一輸送模組機器人46然後將該半 導體基材72送至該第一負載鎖定件60,其被加壓至大氣壓 。該半導體基材72然後被該裝載模組機器人46送至該第一 莢68 。依序地,其它的半導體基材從該第二至第三金屬沉 積模組57-59被送至該第一俠68。稍後,更多來自於第二 莢70的半導體基材被處理並回到第二莢70。 對於熟悉此技藝者而言將會很明顯的是,更多或更少 的超臨界處理模組可被耦合至該前端輸送模五44。再者, 對於熟悉此技藝者而言將會很明顯的是,更多或更少的金 屬沉積模組可被耦合至該後端輸送模組52。甚者,對於熟 悉此技藝者而言將會很明顯的是,對於前端輸送模組44而 言,一單一的負載鎖定件將足以進入該前端輸送模組44。 經濟部智慧財產局員工消費合作社印製 在一第一替代的金屬沉積群束工具中,該前端輸送模 組44是在大氣壓下操作並提供一鈍氣環境給該半導體晶圓 。在該第一替代的金屬沉積群束工具中,第三及第四負載 鎖定件將該前端輸送模組44耦合至該後端輸送模組52 °同 樣在該第一替代的金屬沉積群束工具中,一鈍氣注入結構 被耦合至該前端輸送模組。 在一第二替代的金屬沉積群束工具中’該第一及第二 超臨界處理模組48及49,及第一及第二金屬沉積模組56 及57係耦合至單一的輸送模組。與較佳的金屬沉積工具40 比較起來,該第一替代的金屬沉積工具係較不好的,因爲 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -17 · 1287853 A7
「 遞見制I 五、發明説明(15) -- _丨 該較佳的金屬沉積工具藉由將模組安排在各自的輸送模組 附近而將超臨界處理模組與金屬沉積模組分隔開來。這可 達成一較乾淨的金屬沉積處理。該第一替代的金屬沉積工 具係被教導於2000年十一月1日所提申之美國專利申請案 第09/704,641號中,該案內容藉由此參照而被倂於本文中 〇 對於熟悉此技藝者而言將會很明顯的是,該較佳的實 施曆之不同的變化可在不偏離由以下的申請專利範圍所界 定之本發明的精神與範圍下被達成。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -18- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X29*7公釐)
Claims (1)
- A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 1287853 —- ZZZZ~T ^mrT 六、申請專利範圍 一— 附件4A; 第90109943號專利申請案 中文申請專利範圍替換本 民國93年9月22日修正 1. 一種將一金屬膜層沉積於一基材上的方法,其包含以 下的步驟: a) 保持超臨界二氧化碳及一螯合劑與該基材接觸用以從 該基材的一金屬表面上去除一氧化物層,藉以形成一經過 預淸潔的基材;及 b) 在不需將該經過預淸潔的基材曝露於一會將該經過 預淸潔的基材的金屬表面氧化的物質中之下,沉積該金屬 膜層於該經過預淸潔的基材上。 2. 如申請專利範圍第1項所述之方法,其中該保持超臨 界二氧化碳及一螯合劑與該基材接觸的步驟更包含保持一’ 酸與該基材接觸使得該酸溶解該氧化物層。 3 ·如申請專利範圍第2項所述之方法,其中該酸係選自 於包含一有機酸及一無機酸的組群中。 4.如申請專利範圍第2項所述之方法,其中該氧化物層 包含氧化銅。 5 .如申請專利範圍第4項所述之方法,其中該酸包含一 有機酸。 6.如申請專利範圍第4項所述之方法,其中該酸係選自 於包含乙酸’甲酸,草酸及丙二酸;^ -羥基酸如羥乙酸, 檸檬酸,蘋果酸或乳酸;或胺基酸如甘胺酸,丙胺酸,白 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)1287853 A8 B8 C8 D8 六、申請專利範圍 胺酸,鏘胺酸,麩醯胺或維胺酸的組群中。 (請先聞讀背面之注意事項再填寫本頁) 7 ·如申請專利範圍第2項所述之方法,其中該氧化物包 含氧化鋁。 8·如申請專利範圍第7項所述之方法,其中該酸包含一 無機酸。 9.如申請專利範圍第7項所述之方法,其中該酸係選自 於包含氫氟酸及緩衝的氫氟酸公式如氟化銨及二氟化胺的 組群中。 10·如申請專利範圍第1項所述之方法,其更包含在沉 積該金屬膜層之前,保持該超臨界二氧化碳與該基材接觸 用以將一被吸收物質從該基材中釋出的步驟。 1 1 ·如申請專利範圍第1 0項所述之方法,其中該保持該 超臨界二氧化碳與該基材接觸將一被吸收的物質從該基材 釋出。 經濟部智慧財產局員工消費合作社印製 I2.如申請專利範圍第1項所述之方法,其更包含在沉 積該金屬膜層之前,保持該超臨界二氧化碳及一溶劑與該 基材接觸用以將一殘留物從該基材上去除的步驟,該殘留 物是選自於包含光阻,光阻殘留物,及鈾刻殘留物的組群 中〇 1 3 .如申請專利範圍第1項所述之方法,其中該螯合劑 係選自於包含包含2,4-戊烷二酮,1,1,1,6,. 6,6·六 氟-2,4-戊烷二酮,1,1,1-三氟戊烷-2,4-二酮,2,6-六 甲基庚烷-3,5-二酮,2,2,7-三甲基辛烷-2,4-二酮,2 ,2,6,6-四甲基庚烷-3,5-二酮,乙烯二胺二醋酸 本紙張尺度適用中國國家摞準(CNS ) A4規格(210X297公釐) _ 2 _ 1287853 A8 B8 C8 D8 六、申請專利範圍 (EDTA),及三價氮基三醋酸(NTA)的組群中。 14.一種將一金屬膜層沉積於一基材上的方法,其包含 以下的步驟: a) 保持超臨界二氧化碳及一胺與該基材接觸用以從該基 材的一金屬表面上去除一氧化物層,藉以形成一經過預淸 潔的基材;及 b) 在不需將該經過預淸潔的基材曝露於一會將該經過 預淸潔的基材的金屬表面氧化的物質中之下,沉積該金屬 膜層於該經過預淸潔的基材上。 15·如申請專利範圍第1項所述之方法,其中該胺係 選自於包含三乙醇胺,2-甲胺基乙醇,吡啶,2,2,-聯吡啶 ,及五甲基二乙烯三胺的組群中。 1 6 ·如申請專利範圍第1 4項所述之方法,其更包含在沉 積該金屬膜層之前,保持該超臨界二氧化碳與該基材接觸· 用以將一被吸收物質從該基材中釋出的步驟。 17·如申請專利範圍第16項所述之方法,其中該保持該 超臨界二氧化碳與該基材接觸將一被吸收的物質從該基材· 釋出。 18·如申請專利範圍第I4項所述之方法,其更包含在沉 積該金屬膜層之前,保持該超臨界二氧化碳及一溶齊[|與_ 基材接觸用以將一殘留物從該基材上去除的步驟.,該^胃 物是選自於包含光阻,光阻殘留物,及蝕刻殘留物的,組肖 中 〇 19.一種將一金屬膜層沉積於一基材上的方法,其包含 ^氏張尺度適用中國國家摞準(CNS ) A4規格(210X297公釐) ---- "- ----------#! (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 1287853 六、申請專利範圍 以下的步驟: (請先閱讀背面之注意事項再填寫本頁} a) 保持超臨界二氧化碳於一第一模組內且與該基材接觸 用以從該基材上去除一吸著物(sorbate),其是由包含一被吸 收物(aborbate)及一吸附物(adsorbate)的組群中所選取的, 藉以形成一經過反吸收的基材;及 b) 在不需將該經過反吸收的基材曝露於會形成非揮發 性吸著物的物質中之下,在一第二模組中將該膜層沉積於 該經過反吸收的基材上,其中該基材是經由一閥而從該第 一模組被傳送至該第二模組。 2 0.如申請專利範圍第19項所述之方法,其中該膜層包 含一金屬膜層。 2 1 .如申請專利範圍第20項所述之方法,其更包含在沉 積該金屬膜層於該基材上的步驟之前,保持該超臨界二氧 化碳及一螯合劑與該基材接觸,用以將一氧化物層從該基‘ 材的一金屬表面上去除的步驟。 經濟部智慧財產局員工消費合作社印製 22.如申請專利範圍第21項所述之方法,其中保持該超 臨界二氧化碳及該螯合劑與該基材接觸的步驟更包含保持 一酸與該基材接觸使得該酸可溶解該氧化物層。 2 3.如申請專利範圍第20項所述之方法,其更包含在沉 積該金屬膜層於該基材上的步驟之前,保持該超臨界二氧 化碳及一胺與該基材接觸,用以將一氧化物層從該基材的 一金屬表面上去除的步驟。 2 4.如申請專利範圍第20項所述之方法,其更包含在沉 積該金屬膜層之前,保持該超臨界二氧化碳及一溶劑與該 -4 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) A8 B8 C8 D8 1287853 々、申請專利範圍 基材接觸用以將一殘留物從該基材上去除的步驟,該殘留 物是選自於包含光阻,光阻殘留物,及蝕刻殘留物的組群 中〇 2 5.—種將一金屬膜層沉積於一基材上的方法,其包含 以下的步驟: a) 保持超臨界二氧化碳與該基材接觸用以從該基材上去 除一吸著物(sorbate),其是由包含一被吸收物(aborbate)及 一吸附物(adsorbate)的組群中所選取的; b) 保持該超臨界二氧化碳及一螯合劑與該基材接觸, 用以將一氧化物層從該基材.的一金屬表面上去除;及 c) 在不需將該基材曝露於會在沉積該金屬膜層之前形成 非揮發性吸著物的第一物質中及在不需將該基材曝露於會 在沉積該金屬膜層之前形成氧化物的第二物質中之下,沉 積該金屬膜層於該基材上。 26. 如申請專利範圍第25項所述之方法,其中保持該超 臨界二氧化碳及該螯合劑與該基材接觸的步驟更包含保持 一酸與該基材接觸使得該酸可溶解該氧化物層。 27. 如申請專利範圍第25項所述之方法,其更包含在沉 積該金屬膜層之前,保持該超臨界二氧化碳及一溶劑與該 基材接觸用以將一殘留物從該基材上去除的步驟,該殘留 物是選自於包含光阻,光阻殘留物,及蝕刻殘留物的組群 〇 28. —種將一金屬膜層沉積於一基材上的方法,其包含 以下的步驟: 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先聞讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 1287853 六、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) a) 保持超臨界二氧化碳與該基材接觸用以從該基材上去 除一吸著物(sorbate),其是由包含一被吸收物(aborbate)及 一吸附物(adsorbate)的組群中所選取的; b) 保持該超臨界二氧化碳及一胺與該基材接觸,用以 將一氧化物層從該基材的一金屬表面上去除;及 〇在不需將該基材曝露於會在沉積該金屬膜層之前形成 非揮發性吸著物的第一物質中及在不需將該基材曝露於會 在沉積該金屬膜層之前形成氧化物的第二物質中之下,沉 積該金屬膜層於該基材上。 29.如申請專利範圍第28所述之方法,其更包含在沉積 該金屬膜層之前,保持該超臨界二氧化碳及一溶劑與該基 材接觸用以將一殘留物從該基材上去除的步驟,該殘留物 是選自於包含光阻,光阻殘留物,及蝕刻殘留物的組群中 〇 3 0.—種將一金屬膜層沉積於一基材上的方法,其包含 以下的步驟: 經濟部智慧財產局員工消費合作社印製 a) 保持超臨界二氧化碳,一螯合劑及一酸與該基材接觸 使得該酸可溶解該基材的一金屬表面上的氧化物層及該螯 合劑可帶走金屬離子,藉以形成一經過預淸潔的基材;及 b) 在不需將該經過預淸潔的基材曝露於一會氧化該經 過預淸潔的基材的金屬表面的物質中之下,沉積該金屬膜 層於該經過預淸潔的基材上。 31.—種用來將一金屬膜層沉積於一基材上的設備,其 包含: 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) -6 - 1287853 A8 B8 C8 D8 六、申請專利範圍 a) —輸送模組; b) —超臨界處理模組,其耦合至該輸送模組; c) 一金屬沉積模組;及 d) —真空模組,其將該金屬沉積模組耦合至該輸送模 組; e) 將該基材傳送於該超臨界處理模組與該金屬沉積模組 之間的機構。 3 2.如申請專利範圍第31項所述之設備,其中該輸送模 組包含一入口及一第一機器人。 3 3.如申請專利範圍第32項所述之設備,其中該入口包 含一負載鎖定件。 34·如申請專利範圍第33,項所述之設備,其更包含一鈍 氣注入結構,其耦合至該輸送模組使得在操作時該輸送模 組可提供一鈍氣環境。 3 5.如申請專利範圍第33項所述之設備,其更包含一真 空幫浦,其耦合至該輸送模組使得在操作時該輸送模組可 在真空下操作。 3 6·如申請專利範圍第32項所述之設備,其中該真空模 組包含一第二機器人。 3 7·如申請專利範圍第36項所述之設備,其更包含一閥 ’該閥將該輸送模組耦合至該真空模組。 38·如申請專利範圍第37項所述之設備,其更包含一真 空幫浦其耦合至該真空模組。 3 9·如申請專利範圍第36項所述之設備,其.更包含一負 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂 P. 經濟部智慧財產局員工消費合作社印製 1287853 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 載鎖定件,該負載鎖定件將該輸送模組耦合至該真空模組 〇 4 0.如申請專利範圍第3 1項所述之設備,其中該超臨界 處理模組包含一壓力容器。 41. 一種用來將一金屬膜層沉積於一基材上的設備,其 包含: a) —輸送模組,其包含一入口及一第一機器人; b) —超臨界處理模組,其耦合至該輸送模組; c) 一金屬沉積模組;及 d) —真空模組,其將該金屬沉積模組耦合至該輸送模 組,該真空模組包含一真空室及一第二機器人,其中該第 一機器人與該第二檄器人被建構成可將該基材傳送於該超 臨界處理模組與該金屬沉積模組之間的機構。 42. —種用來將金屬膜層沈積於一基材上的設備,其包 含: a) —前端輸送模組,其包含一或多個超臨界模組被建構 成可用一超臨界溶液來處理一基材; b) —後端輸送模組,其耦合至該前端輸送模組,該後端 輸送模組包含一或多個沉積模組被建構成可將一物質層沉 積在該經過處理的基材上;及 c) 在不需將該經過處理的基材曝露於環境中之下,將該 基材傳送於該前端輸送模組與該後端輸送模組之間的機 構。 43·如申請專利範圍第42項所述之設備,其中將該基材 本紙張尺度適用中國國家標準( CNS ) A4規格(210X297公釐) ~ (請先閲讀背面之注意事項再填寫本頁)1287853 Α8 Β8 C8 D8 經濟部智慧財產局員工消費合作社印製 々、申請專利範圍 傳送於該前端輸送模組與該後端輸送模組之間的機構包含 一或多個輸送機器人。 4(如申請專利範圍第42項所述之設備,其更包含一閥 用來將該基材隔離在前端輸送模組或該後端輸送模組之一 者內。 45. 如申請專利範圍第42項所述之設備,其更包含一裝 載器模組用來載入該基材。 46. 如申請專利範圍第45項所述之設備,其中該裝載器 模組被耦合至該前端輸送模組。 本紙張尺度適用中國國家標準(CNS ) μ規格(210X297公釐) (請先閱讀背面之注意事項存填寫本頁)
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2001
- 2001-04-24 IL IL15237601A patent/IL152376A0/xx active IP Right Grant
- 2001-04-24 JP JP2001579358A patent/JP2003534646A/ja not_active Withdrawn
- 2001-04-24 KR KR1020027014368A patent/KR100693691B1/ko not_active IP Right Cessation
- 2001-04-24 EP EP01928842A patent/EP1277233A2/en not_active Withdrawn
- 2001-04-24 US US09/841,800 patent/US6890853B2/en not_active Expired - Fee Related
- 2001-04-24 CN CN018083307A patent/CN1216415C/zh not_active Expired - Fee Related
- 2001-04-24 WO PCT/US2001/013278 patent/WO2001082368A2/en not_active Application Discontinuation
- 2001-04-24 AU AU2001255656A patent/AU2001255656A1/en not_active Abandoned
- 2001-04-25 TW TW090109943A patent/TWI287853B/zh not_active IP Right Cessation
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CN1425194A (zh) | 2003-06-18 |
AU2001255656A1 (en) | 2001-11-07 |
IL152376A (en) | 2006-07-05 |
KR100693691B1 (ko) | 2007-03-09 |
KR20030043788A (ko) | 2003-06-02 |
JP2003534646A (ja) | 2003-11-18 |
CN1216415C (zh) | 2005-08-24 |
JP5000629B2 (ja) | 2012-08-15 |
US7208411B2 (en) | 2007-04-24 |
WO2001082368A3 (en) | 2002-05-16 |
US20040229449A1 (en) | 2004-11-18 |
JP2009102740A (ja) | 2009-05-14 |
IL152376A0 (en) | 2003-05-29 |
EP1277233A2 (en) | 2003-01-22 |
US20020001929A1 (en) | 2002-01-03 |
WO2001082368A2 (en) | 2001-11-01 |
US6890853B2 (en) | 2005-05-10 |
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