MY148605A - Processes and integrated systems for engineering a substrate surface for metal deposition - Google Patents
Processes and integrated systems for engineering a substrate surface for metal depositionInfo
- Publication number
- MY148605A MY148605A MYPI20090714A MY148605A MY 148605 A MY148605 A MY 148605A MY PI20090714 A MYPI20090714 A MY PI20090714A MY 148605 A MY148605 A MY 148605A
- Authority
- MY
- Malaysia
- Prior art keywords
- metal
- substrate surface
- copper
- integrated system
- processes
- Prior art date
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
THE EMBODIMENTS PROVIDE PROCESSES AND INTEGRATED SYSTEMS THAT PRODUCE A METAL-TO-METAL OR A SILICON-TO-METAL INTERFACE TO ENHANCE ELECTRO-MIGRATION PERFORMANCE, TO PROVIDE LOWER METAL RESISTIVITY, AND TO IMPROVE METAL-TO-METAL OR SILICON-TO-METAL INTERFACIAL ADHESION FOR COPPER INTERCONNECTS. AN EXEMPLARY METHOD OF PREPARING A SUBSTRATE SURFACE TO SELECTIVELY DEPOSIT A THIN LAYER OF A COBALT-ALLOY MATERIAL ON A COPPER SURFACE OF IN AN INTEGRATED SYSTEM TO IMPROVE ELECTROMIGRATION PERFORMANCE OF A COPPER INTERCONNECT IS PROVIDED. THE METHOD INCLUDES REMOVING CONTAMINANTS AND METAL OXIDES FROM THE SUBSTRATE SURFACE IN THE INTEGRATED SYSTEM, AND RECONDITIONING THE SUBSTRATE SURFACE USING A REDUCING ENVIRONMENT AFTER REMOVING CONTAMINANTS AND METAL OXIDES IN THE INTEGRATED SYSTEM. THE METHOD ALSO INCLUDES SELECTIVELY DEPOSITING THE THIN LAYER OF COBALT-ALLOY MATERIAL ON THE COPPER SURFACE OF THE COPPER INTERCONNECT IN THE INTEGRATED SYSTEM AFTER RECONDITIONING THE SUBSTRATE SURFACE. SYSTEM TO PRACTICE THE EXEMPLARY METHOD DESCRIBED ABOVE ARE ALSO PROVIDED.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/513,446 US8747960B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide |
US11/513,634 US8771804B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a copper surface for selective metal deposition |
US11/514,038 US8241701B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a barrier surface for copper deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
MY148605A true MY148605A (en) | 2013-05-15 |
Family
ID=41202298
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20090714 MY148605A (en) | 2006-08-30 | 2007-08-17 | Processes and integrated systems for engineering a substrate surface for metal deposition |
MYPI2012004997A MY171542A (en) | 2006-08-30 | 2007-08-17 | Processes and integrated systems for engineering a substrate surface for metal deposition |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2012004997A MY171542A (en) | 2006-08-30 | 2007-08-17 | Processes and integrated systems for engineering a substrate surface for metal deposition |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP5489717B2 (en) |
CN (2) | CN103107120B (en) |
MY (2) | MY148605A (en) |
SG (1) | SG174752A1 (en) |
TW (1) | TWI393186B (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090269507A1 (en) | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
US8227344B2 (en) * | 2010-02-26 | 2012-07-24 | Tokyo Electron Limited | Hybrid in-situ dry cleaning of oxidized surface layers |
JP2012054306A (en) * | 2010-08-31 | 2012-03-15 | Tokyo Electron Ltd | Manufacturing method of semiconductor device |
KR20130092570A (en) * | 2010-08-31 | 2013-08-20 | 도쿄엘렉트론가부시키가이샤 | Method for manufacturing semiconductor device |
JP5560144B2 (en) * | 2010-08-31 | 2014-07-23 | 東京エレクトロン株式会社 | Manufacturing method of semiconductor device |
CN102468265A (en) * | 2010-11-01 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Connection plug and manufacturing method thereof |
US8603913B1 (en) * | 2012-12-20 | 2013-12-10 | Lam Research Corporation | Porous dielectrics K value restoration by thermal treatment and or solvent treatment |
US9040385B2 (en) * | 2013-07-24 | 2015-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for cleaning substrate surface for hybrid bonding |
WO2015061035A1 (en) | 2013-10-22 | 2015-04-30 | Tosoh Smd, Inc. | Optimized textured surfaces and methods of optimizing |
WO2015195080A1 (en) * | 2014-06-16 | 2015-12-23 | Intel Corporation | Selective diffusion barrier between metals of an integrated circuit device |
US9997405B2 (en) * | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
US9768060B2 (en) * | 2014-10-29 | 2017-09-19 | Applied Materials, Inc. | Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD |
KR20230026514A (en) * | 2016-10-02 | 2023-02-24 | 어플라이드 머티어리얼스, 인코포레이티드 | Doped selective metal caps to improve copper electromigration with ruthenium liner |
JP6842159B2 (en) * | 2016-12-13 | 2021-03-17 | サムコ株式会社 | Plasma processing method |
US10438846B2 (en) | 2017-11-28 | 2019-10-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Physical vapor deposition process for semiconductor interconnection structures |
JP2019192892A (en) | 2018-04-18 | 2019-10-31 | 東京エレクトロン株式会社 | Processing system and processing method |
KR102301933B1 (en) * | 2018-12-26 | 2021-09-15 | 한양대학교 에리카산학협력단 | Fabricating method of Semiconductor device |
US20220344205A1 (en) * | 2019-09-25 | 2022-10-27 | Tokyo Electron Limited | Substrate liquid processing method and substate liquid processing apparatus |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6017820A (en) * | 1998-07-17 | 2000-01-25 | Cutek Research, Inc. | Integrated vacuum and plating cluster system |
US6144099A (en) * | 1999-03-30 | 2000-11-07 | Advanced Micro Devices, Inc. | Semiconductor metalization barrier |
US6365516B1 (en) * | 2000-01-14 | 2002-04-02 | Advanced Micro Devices, Inc. | Advanced cobalt silicidation with in-situ hydrogen plasma clean |
JP2001355074A (en) * | 2000-04-10 | 2001-12-25 | Sony Corp | Electroless plating method, and apparatus thereof |
EP1277233A2 (en) * | 2000-04-25 | 2003-01-22 | Tokyo Electron Corporation | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
JP2001326192A (en) * | 2000-05-16 | 2001-11-22 | Applied Materials Inc | Film-forming method and film-forming device |
US6475893B2 (en) * | 2001-03-30 | 2002-11-05 | International Business Machines Corporation | Method for improved fabrication of salicide structures |
JP2003034876A (en) * | 2001-05-11 | 2003-02-07 | Ebara Corp | Catalytic treatment liquid and method for electroless plating |
US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
JP2003142579A (en) * | 2001-11-07 | 2003-05-16 | Hitachi Ltd | Semiconductor device and method for manufacturing the same |
US7008872B2 (en) * | 2002-05-03 | 2006-03-07 | Intel Corporation | Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures |
US6875693B1 (en) * | 2003-03-26 | 2005-04-05 | Lsi Logic Corporation | Via and metal line interface capable of reducing the incidence of electro-migration induced voids |
JP2004363155A (en) * | 2003-06-02 | 2004-12-24 | Ebara Corp | Method and device for manufacturing semiconductor device |
JP2005116630A (en) * | 2003-10-03 | 2005-04-28 | Ebara Corp | Wiring forming method and apparatus thereof |
JP2007042662A (en) * | 2003-10-20 | 2007-02-15 | Renesas Technology Corp | Semiconductor device |
US20050095855A1 (en) * | 2003-11-05 | 2005-05-05 | D'urso John J. | Compositions and methods for the electroless deposition of NiFe on a work piece |
JP4503356B2 (en) * | 2004-06-02 | 2010-07-14 | 東京エレクトロン株式会社 | Substrate processing method and semiconductor device manufacturing method |
-
2007
- 2007-08-17 MY MYPI20090714 patent/MY148605A/en unknown
- 2007-08-17 MY MYPI2012004997A patent/MY171542A/en unknown
- 2007-08-17 JP JP2009526621A patent/JP5489717B2/en not_active Expired - Fee Related
- 2007-08-17 CN CN201310011701.0A patent/CN103107120B/en active Active
- 2007-08-17 CN CN200780032409.XA patent/CN101558186B/en active Active
- 2007-08-17 SG SG2011062197A patent/SG174752A1/en unknown
- 2007-08-29 TW TW96131990A patent/TWI393186B/en active
-
2013
- 2013-12-25 JP JP2013266333A patent/JP5820870B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101558186B (en) | 2015-01-14 |
JP5489717B2 (en) | 2014-05-14 |
TW200832556A (en) | 2008-08-01 |
TWI393186B (en) | 2013-04-11 |
JP2014099627A (en) | 2014-05-29 |
JP5820870B2 (en) | 2015-11-24 |
CN103107120B (en) | 2016-06-08 |
MY171542A (en) | 2019-10-17 |
SG174752A1 (en) | 2011-10-28 |
CN101558186A (en) | 2009-10-14 |
JP2010503205A (en) | 2010-01-28 |
CN103107120A (en) | 2013-05-15 |
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