WO2008027216A3 - Processes and integrated systems for engineering a substrate surface for metal deposition - Google Patents
Processes and integrated systems for engineering a substrate surface for metal deposition Download PDFInfo
- Publication number
- WO2008027216A3 WO2008027216A3 PCT/US2007/018270 US2007018270W WO2008027216A3 WO 2008027216 A3 WO2008027216 A3 WO 2008027216A3 US 2007018270 W US2007018270 W US 2007018270W WO 2008027216 A3 WO2008027216 A3 WO 2008027216A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- substrate surface
- copper
- integrated system
- processes
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000001465 metallisation Methods 0.000 title 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052802 copper Inorganic materials 0.000 abstract 5
- 239000010949 copper Substances 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 229910000531 Co alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 239000000356 contaminant Substances 0.000 abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- 150000004706 metal oxides Chemical class 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200780032409.XA CN101558186B (en) | 2006-08-30 | 2007-08-17 | Processes and integrated systems for engineering a substrate surface for metal deposition |
JP2009526621A JP5489717B2 (en) | 2006-08-30 | 2007-08-17 | Method and integrated system for conditioning a substrate surface for metal deposition |
KR1020097004276A KR101506352B1 (en) | 2006-08-30 | 2007-08-17 | Processes and integrated systems for engineering a substrate surface for metal deposition |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/513,446 US8747960B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide |
US11/513,634 US8771804B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a copper surface for selective metal deposition |
US11/513,634 | 2006-08-30 | ||
US11/514,038 | 2006-08-30 | ||
US11/514,038 US8241701B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a barrier surface for copper deposition |
US11/513,446 | 2006-08-30 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2008027216A2 WO2008027216A2 (en) | 2008-03-06 |
WO2008027216A3 true WO2008027216A3 (en) | 2008-04-17 |
WO2008027216A9 WO2008027216A9 (en) | 2008-05-22 |
Family
ID=39136458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/018270 WO2008027216A2 (en) | 2006-08-30 | 2007-08-17 | Processes and integrated systems for engineering a substrate surface for metal deposition |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101506352B1 (en) |
WO (1) | WO2008027216A2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090269507A1 (en) | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
KR101685372B1 (en) * | 2010-05-07 | 2016-12-12 | 성균관대학교 산학협력단 | Method for forming copper alloy by cyclic deposition |
US8603913B1 (en) * | 2012-12-20 | 2013-12-10 | Lam Research Corporation | Porous dielectrics K value restoration by thermal treatment and or solvent treatment |
WO2018063815A1 (en) | 2016-10-02 | 2018-04-05 | Applied Materials, Inc. | Doped selective metal caps to improve copper electromigration with ruthenium liner |
US11913107B2 (en) * | 2019-11-08 | 2024-02-27 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
US11380536B2 (en) * | 2020-05-05 | 2022-07-05 | Applied Materials, Inc. | Multi-step pre-clean for selective metal gap fill |
US20220375751A1 (en) * | 2021-05-24 | 2022-11-24 | Applied Materials, Inc. | Integrated epitaxy and preclean system |
KR102619817B1 (en) * | 2022-05-19 | 2024-01-02 | 세메스 주식회사 | Method of forming semiconductor device and substrate processing system for forming semiconductor device |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6017820A (en) * | 1998-07-17 | 2000-01-25 | Cutek Research, Inc. | Integrated vacuum and plating cluster system |
US6239006B1 (en) * | 1999-07-09 | 2001-05-29 | Advanced Micro Devices, Inc. | Native oxide removal with fluorinated chemistry before cobalt silicide formation |
US20010055934A1 (en) * | 2000-06-22 | 2001-12-27 | Applied Materials, Inc. | Method and apparatus for treating a substrate |
US6365516B1 (en) * | 2000-01-14 | 2002-04-02 | Advanced Micro Devices, Inc. | Advanced cobalt silicidation with in-situ hydrogen plasma clean |
US20030022509A1 (en) * | 1998-11-17 | 2003-01-30 | Applied Materials, Inc. | Plasma treatment for copper oxide reduction |
US6843852B2 (en) * | 2002-01-16 | 2005-01-18 | Intel Corporation | Apparatus and method for electroless spray deposition |
US6875693B1 (en) * | 2003-03-26 | 2005-04-05 | Lsi Logic Corporation | Via and metal line interface capable of reducing the incidence of electro-migration induced voids |
US6890853B2 (en) * | 2000-04-25 | 2005-05-10 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7232766B2 (en) | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
US7211508B2 (en) * | 2003-06-18 | 2007-05-01 | Applied Materials, Inc. | Atomic layer deposition of tantalum based barrier materials |
TW200530427A (en) * | 2003-10-17 | 2005-09-16 | Applied Materials Inc | Selective self-initiating electroless capping of copper with cobalt-containing alloys |
-
2007
- 2007-08-17 WO PCT/US2007/018270 patent/WO2008027216A2/en active Application Filing
- 2007-08-17 KR KR1020097004276A patent/KR101506352B1/en active IP Right Grant
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6017820A (en) * | 1998-07-17 | 2000-01-25 | Cutek Research, Inc. | Integrated vacuum and plating cluster system |
US20030022509A1 (en) * | 1998-11-17 | 2003-01-30 | Applied Materials, Inc. | Plasma treatment for copper oxide reduction |
US6239006B1 (en) * | 1999-07-09 | 2001-05-29 | Advanced Micro Devices, Inc. | Native oxide removal with fluorinated chemistry before cobalt silicide formation |
US6365516B1 (en) * | 2000-01-14 | 2002-04-02 | Advanced Micro Devices, Inc. | Advanced cobalt silicidation with in-situ hydrogen plasma clean |
US6890853B2 (en) * | 2000-04-25 | 2005-05-10 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
US20010055934A1 (en) * | 2000-06-22 | 2001-12-27 | Applied Materials, Inc. | Method and apparatus for treating a substrate |
US6843852B2 (en) * | 2002-01-16 | 2005-01-18 | Intel Corporation | Apparatus and method for electroless spray deposition |
US6875693B1 (en) * | 2003-03-26 | 2005-04-05 | Lsi Logic Corporation | Via and metal line interface capable of reducing the incidence of electro-migration induced voids |
Also Published As
Publication number | Publication date |
---|---|
KR20090052331A (en) | 2009-05-25 |
WO2008027216A2 (en) | 2008-03-06 |
WO2008027216A9 (en) | 2008-05-22 |
KR101506352B1 (en) | 2015-03-26 |
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