TWI274348B - Storage element, storage apparatus, and method for programming storage element - Google Patents

Storage element, storage apparatus, and method for programming storage element Download PDF

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Publication number
TWI274348B
TWI274348B TW093133886A TW93133886A TWI274348B TW I274348 B TWI274348 B TW I274348B TW 093133886 A TW093133886 A TW 093133886A TW 93133886 A TW93133886 A TW 93133886A TW I274348 B TWI274348 B TW I274348B
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TW
Taiwan
Prior art keywords
gate
bias
substrate
region
applying
Prior art date
Application number
TW093133886A
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English (en)
Chinese (zh)
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TW200537504A (en
Inventor
Jeffrey W Lutze
Chan-Sui Pang
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Sandisk Corp
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Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200537504A publication Critical patent/TW200537504A/zh
Application granted granted Critical
Publication of TWI274348B publication Critical patent/TWI274348B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW093133886A 2003-11-07 2004-11-05 Storage element, storage apparatus, and method for programming storage element TWI274348B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/703,717 US7057931B2 (en) 2003-11-07 2003-11-07 Flash memory programming using gate induced junction leakage current

Publications (2)

Publication Number Publication Date
TW200537504A TW200537504A (en) 2005-11-16
TWI274348B true TWI274348B (en) 2007-02-21

Family

ID=34551944

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093133886A TWI274348B (en) 2003-11-07 2004-11-05 Storage element, storage apparatus, and method for programming storage element

Country Status (7)

Country Link
US (1) US7057931B2 (enExample)
EP (1) EP1687826A2 (enExample)
JP (1) JP2007511076A (enExample)
KR (1) KR20060120078A (enExample)
CN (1) CN1938785A (enExample)
TW (1) TWI274348B (enExample)
WO (1) WO2005048269A2 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7242051B2 (en) 2005-05-20 2007-07-10 Silicon Storage Technology, Inc. Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
US7247907B2 (en) * 2005-05-20 2007-07-24 Silicon Storage Technology, Inc. Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
US7307882B2 (en) * 2005-06-29 2007-12-11 Macronix International Co., Ltd. Non-volatile memory
JP4545056B2 (ja) * 2005-06-30 2010-09-15 シャープ株式会社 不揮発性半導体記憶装置
JP4902972B2 (ja) * 2005-07-15 2012-03-21 ルネサスエレクトロニクス株式会社 不揮発性記憶素子の制御方法
KR100702029B1 (ko) * 2005-09-22 2007-03-30 삼성전자주식회사 플로팅된 드레인측 보조 게이트를 갖는 고전압 모스트랜지스터를 구비하는 비휘발성 메모리 소자들 및 그제조방법들
JP5250182B2 (ja) * 2005-10-28 2013-07-31 シャープ株式会社 不揮発性メモリ装置およびその駆動方法
KR100706789B1 (ko) * 2005-11-17 2007-04-12 삼성전자주식회사 비휘발성 메모리 소자
US7939861B2 (en) * 2007-02-02 2011-05-10 Synopsys, Inc. Non-volatile memory devices having floating-gates FETs with different source-gate and drain-gate border lengths
US7499336B2 (en) * 2007-05-14 2009-03-03 Skymedi Corporation Method of programming a nonvolatile memory cell and related memory array
KR20080111963A (ko) * 2007-06-20 2008-12-24 삼성전자주식회사 비휘발성 메모리 소자 및 그 형성방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7894263B2 (en) * 2007-09-28 2011-02-22 Sandisk Corporation High voltage generation and control in source-side injection programming of non-volatile memory
US8355278B2 (en) * 2007-10-05 2013-01-15 Micron Technology, Inc. Reducing effects of program disturb in a memory device
US7619933B2 (en) * 2007-10-05 2009-11-17 Micron Technology, Inc. Reducing effects of program disturb in a memory device
WO2009107241A1 (ja) * 2008-02-29 2009-09-03 株式会社 東芝 マルチドットフラッシュメモリ
KR101503875B1 (ko) * 2008-03-17 2015-03-25 삼성전자주식회사 단채널 효과를 억제할 수 있는 반도체 장치 및 그 제조방법
KR101569894B1 (ko) * 2008-11-12 2015-11-17 삼성전자주식회사 불 휘발성 메모리 장치의 프로그램 방법
CN103367452B (zh) * 2009-09-11 2015-11-25 中芯国际集成电路制造(上海)有限公司 绿色晶体管、电阻随机存储器及其驱动方法
CN102742003B (zh) * 2010-01-15 2015-01-28 株式会社半导体能源研究所 半导体器件
JP2012069186A (ja) 2010-09-22 2012-04-05 Toshiba Corp 不揮発性半導体記憶装置
US8384147B2 (en) * 2011-04-29 2013-02-26 Silicon Storage Technology, Inc. High endurance non-volatile memory cell and array
US8711636B2 (en) * 2011-05-13 2014-04-29 Silicon Storage Technology, Inc. Method of operating a split gate flash memory cell with coupling gate
US8670277B2 (en) 2011-07-27 2014-03-11 Infineon Technologies Ag Memory and method for programming memory cells
US9064551B2 (en) 2012-05-15 2015-06-23 Micron Technology, Inc. Apparatuses and methods for coupling load current to a common source
US8976594B2 (en) 2012-05-15 2015-03-10 Micron Technology, Inc. Memory read apparatus and methods
US9064577B2 (en) 2012-12-06 2015-06-23 Micron Technology, Inc. Apparatuses and methods to control body potential in memory operations
US8995188B2 (en) 2013-04-17 2015-03-31 Micron Technology, Inc. Sharing support circuitry in a memory
CN104637537B (zh) * 2014-11-17 2019-02-19 上海华力微电子有限公司 一种闪存器件及其编程方法
JP6739327B2 (ja) * 2016-12-27 2020-08-12 ルネサスエレクトロニクス株式会社 半導体装置
US10176880B1 (en) 2017-07-01 2019-01-08 Intel Corporation Selective body reset operation for three dimensional (3D) NAND memory
TWI824233B (zh) * 2020-02-12 2023-12-01 美商新思科技股份有限公司 具有漏電流中的統計變化之動態隨機存取記憶體通路電晶體的設計
CN114695370B (zh) * 2022-05-31 2023-03-24 广州粤芯半导体技术有限公司 半导体结构及其制备方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409723A (en) * 1980-04-07 1983-10-18 Eliyahou Harari Method of forming non-volatile EPROM and EEPROM with increased efficiency
US5268319A (en) 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
JPH04359476A (ja) * 1991-06-05 1992-12-11 Oki Electric Ind Co Ltd 不揮発性半導体メモリの書き換え方法
JPH0582798A (ja) * 1991-09-20 1993-04-02 Fujitsu Ltd 半導体記憶装置及びその製造方法
US5712180A (en) 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
JPH06120515A (ja) * 1992-10-09 1994-04-28 Oki Electric Ind Co Ltd 半導体不揮発性メモリのデータ書き込み及びデータ消去方法
US5467306A (en) 1993-10-04 1995-11-14 Texas Instruments Incorporated Method of using source bias to increase threshold voltages and/or to correct for over-erasure of flash eproms
JP2713115B2 (ja) 1993-10-06 1998-02-16 日本電気株式会社 不揮発性半導体記憶装置の製造方法
JP3999822B2 (ja) 1993-12-28 2007-10-31 株式会社東芝 記憶システム
US5408115A (en) * 1994-04-04 1995-04-18 Motorola Inc. Self-aligned, split-gate EEPROM device
US5455792A (en) * 1994-09-09 1995-10-03 Yi; Yong-Wan Flash EEPROM devices employing mid channel injection
KR0172441B1 (ko) 1995-09-19 1999-03-30 김광호 불휘발성 반도체 메모리의 프로그램 방법
KR100217900B1 (ko) * 1996-04-01 1999-09-01 김영환 플래쉬 메모리 셀의 프로그램 방법
US5793079A (en) 1996-07-22 1998-08-11 Catalyst Semiconductor, Inc. Single transistor non-volatile electrically alterable semiconductor memory device
US6091634A (en) 1997-04-11 2000-07-18 Programmable Silicon Solutions Compact nonvolatile memory using substrate hot carrier injection
US5867425A (en) * 1997-04-11 1999-02-02 Wong; Ting-Wah Nonvolatile memory capable of using substrate hot electron injection
JP3517081B2 (ja) 1997-05-22 2004-04-05 株式会社東芝 多値不揮発性半導体記憶装置
US5867429A (en) 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
KR100297602B1 (ko) 1997-12-31 2001-08-07 윤종용 비휘발성메모리장치의프로그램방법
JP2000040382A (ja) 1998-07-23 2000-02-08 Sony Corp 不揮発性半導体記憶装置およびそのデータ書き込み方法
US5991202A (en) 1998-09-24 1999-11-23 Advanced Micro Devices, Inc. Method for reducing program disturb during self-boosting in a NAND flash memory
US6490200B2 (en) 2000-03-27 2002-12-03 Sandisk Corporation Non-volatile memory with improved sensing and method therefor
US6151248A (en) 1999-06-30 2000-11-21 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
KR100385226B1 (ko) 2000-11-22 2003-05-27 삼성전자주식회사 프로그램 디스터브를 방지할 수 있는 플래시 메모리 장치및 그것을 프로그램하는 방법
JP3631463B2 (ja) 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
US6738289B2 (en) 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
JP3873679B2 (ja) * 2001-07-23 2007-01-24 セイコーエプソン株式会社 半導体容量装置、昇圧回路および不揮発性半導体記憶装置
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6897522B2 (en) 2001-10-31 2005-05-24 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6529412B1 (en) 2002-01-16 2003-03-04 Advanced Micro Devices, Inc. Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge
JP3993438B2 (ja) * 2002-01-25 2007-10-17 株式会社ルネサステクノロジ 半導体装置
US6894339B2 (en) 2003-01-02 2005-05-17 Actrans System Inc. Flash memory with trench select gate and fabrication process

Also Published As

Publication number Publication date
KR20060120078A (ko) 2006-11-24
US7057931B2 (en) 2006-06-06
WO2005048269A2 (en) 2005-05-26
TW200537504A (en) 2005-11-16
WO2005048269A3 (en) 2005-07-28
CN1938785A (zh) 2007-03-28
JP2007511076A (ja) 2007-04-26
US20050099849A1 (en) 2005-05-12
EP1687826A2 (en) 2006-08-09

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