TWI274081B - Induction heating devices and methods for controllably heating an article - Google Patents
Induction heating devices and methods for controllably heating an article Download PDFInfo
- Publication number
- TWI274081B TWI274081B TW091132074A TW91132074A TWI274081B TW I274081 B TWI274081 B TW I274081B TW 091132074 A TW091132074 A TW 091132074A TW 91132074 A TW91132074 A TW 91132074A TW I274081 B TWI274081 B TW I274081B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing chamber
- receiver
- turntable
- heating device
- lining
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims description 50
- 230000006698 induction Effects 0.000 title claims description 6
- 238000012545 processing Methods 0.000 claims abstract description 56
- 239000004020 conductor Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 51
- 239000002344 surface layer Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 20
- 239000010410 layer Substances 0.000 claims description 18
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 18
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 18
- 230000005672 electromagnetic field Effects 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
- H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
- H05B6/108—Induction heating apparatus, other than furnaces, for specific applications using a susceptor for heating a fluid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- General Induction Heating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/017,492 US6896738B2 (en) | 2001-10-30 | 2001-10-30 | Induction heating devices and methods for controllably heating an article |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200302290A TW200302290A (en) | 2003-08-01 |
| TWI274081B true TWI274081B (en) | 2007-02-21 |
Family
ID=21782889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091132074A TWI274081B (en) | 2001-10-30 | 2002-10-29 | Induction heating devices and methods for controllably heating an article |
Country Status (11)
| Country | Link |
|---|---|
| US (3) | US6896738B2 (https=) |
| EP (1) | EP1449407B1 (https=) |
| JP (1) | JP2005508097A (https=) |
| KR (1) | KR20050039709A (https=) |
| CN (1) | CN1611095A (https=) |
| AT (1) | ATE412331T1 (https=) |
| AU (1) | AU2002348053A1 (https=) |
| CA (1) | CA2464855A1 (https=) |
| DE (1) | DE60229549D1 (https=) |
| TW (1) | TWI274081B (https=) |
| WO (1) | WO2003039195A2 (https=) |
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| US7109521B2 (en) * | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
| TW200609371A (en) * | 2004-05-18 | 2006-03-16 | Univ Arkansas | Apparatus and methods of making nanostructures by inductive heating |
| US7365289B2 (en) * | 2004-05-18 | 2008-04-29 | The United States Of America As Represented By The Department Of Health And Human Services | Production of nanostructures by curie point induction heating |
| US7473873B2 (en) * | 2004-05-18 | 2009-01-06 | The Board Of Trustees Of The University Of Arkansas | Apparatus and methods for synthesis of large size batches of carbon nanostructures |
| US9612215B2 (en) | 2004-07-22 | 2017-04-04 | Toyo Tanso Co., Ltd. | Susceptor |
| US20060065634A1 (en) * | 2004-09-17 | 2006-03-30 | Van Den Berg Jannes R | Low temperature susceptor cleaning |
| US20060060145A1 (en) * | 2004-09-17 | 2006-03-23 | Van Den Berg Jannes R | Susceptor with surface roughness for high temperature substrate processing |
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| US8052794B2 (en) * | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
| ITMI20052498A1 (it) * | 2005-12-28 | 2007-06-29 | Lpe Spa | Camera di reazione a temperatura differenziata |
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| JP5202839B2 (ja) * | 2006-12-25 | 2013-06-05 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
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| CN103160810B (zh) * | 2011-12-09 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种用于感应加热的托盘及等离子体加工设备 |
| CN103422073A (zh) * | 2012-05-24 | 2013-12-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 用于感应加热的托盘及等离子体加工设备 |
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| CN104046964B (zh) * | 2014-07-01 | 2016-05-11 | 清华大学 | 热功率密度径向分布可调的电磁感应加热装置 |
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| JP2017055086A (ja) * | 2015-09-11 | 2017-03-16 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置 |
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| SE9801190D0 (sv) | 1998-04-06 | 1998-04-06 | Abb Research Ltd | A method and a device for epitaxial growth of objects by Chemical Vapour Deposition |
| FR2786208B1 (fr) * | 1998-11-25 | 2001-02-09 | Centre Nat Rech Scient | Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre |
| US6449428B2 (en) | 1998-12-11 | 2002-09-10 | Mattson Technology Corp. | Gas driven rotating susceptor for rapid thermal processing (RTP) system |
| US6368404B1 (en) * | 1999-04-23 | 2002-04-09 | Emcore Corporation | Induction heated chemical vapor deposition reactor |
| US6331212B1 (en) * | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
| US6399510B1 (en) * | 2000-09-12 | 2002-06-04 | Applied Materials, Inc. | Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates |
| US6569250B2 (en) * | 2001-01-08 | 2003-05-27 | Cree, Inc. | Gas-driven rotation apparatus and method for forming silicon carbide layers |
-
2001
- 2001-10-30 US US10/017,492 patent/US6896738B2/en not_active Expired - Lifetime
-
2002
- 2002-10-24 EP EP02784266A patent/EP1449407B1/en not_active Expired - Lifetime
- 2002-10-24 CA CA002464855A patent/CA2464855A1/en not_active Abandoned
- 2002-10-24 AU AU2002348053A patent/AU2002348053A1/en not_active Abandoned
- 2002-10-24 DE DE60229549T patent/DE60229549D1/de not_active Expired - Lifetime
- 2002-10-24 WO PCT/US2002/034090 patent/WO2003039195A2/en not_active Ceased
- 2002-10-24 CN CNA028265289A patent/CN1611095A/zh active Pending
- 2002-10-24 KR KR1020047006333A patent/KR20050039709A/ko not_active Withdrawn
- 2002-10-24 AT AT02784266T patent/ATE412331T1/de not_active IP Right Cessation
- 2002-10-24 JP JP2003541310A patent/JP2005508097A/ja active Pending
- 2002-10-29 TW TW091132074A patent/TWI274081B/zh not_active IP Right Cessation
-
2003
- 2003-11-14 US US10/714,214 patent/US7390367B1/en not_active Expired - Lifetime
-
2008
- 2008-05-15 US US12/121,072 patent/US9155131B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE60229549D1 (de) | 2008-12-04 |
| EP1449407A2 (en) | 2004-08-25 |
| WO2003039195A2 (en) | 2003-05-08 |
| US20080127894A1 (en) | 2008-06-05 |
| US7390367B1 (en) | 2008-06-24 |
| US9155131B2 (en) | 2015-10-06 |
| JP2005508097A (ja) | 2005-03-24 |
| AU2002348053A1 (en) | 2003-05-12 |
| WO2003039195A3 (en) | 2003-12-04 |
| EP1449407B1 (en) | 2008-10-22 |
| US6896738B2 (en) | 2005-05-24 |
| CA2464855A1 (en) | 2003-05-08 |
| TW200302290A (en) | 2003-08-01 |
| KR20050039709A (ko) | 2005-04-29 |
| US20090136686A1 (en) | 2009-05-28 |
| US20030079689A1 (en) | 2003-05-01 |
| ATE412331T1 (de) | 2008-11-15 |
| CN1611095A (zh) | 2005-04-27 |
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