AU2002348053A1 - Induction heating devices and methods for controllably heating an article - Google Patents

Induction heating devices and methods for controllably heating an article

Info

Publication number
AU2002348053A1
AU2002348053A1 AU2002348053A AU2002348053A AU2002348053A1 AU 2002348053 A1 AU2002348053 A1 AU 2002348053A1 AU 2002348053 A AU2002348053 A AU 2002348053A AU 2002348053 A AU2002348053 A AU 2002348053A AU 2002348053 A1 AU2002348053 A1 AU 2002348053A1
Authority
AU
Australia
Prior art keywords
article
processing chamber
heating
susceptor
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002348053A
Other languages
English (en)
Inventor
Michael James Paisley
Joseph John Sumakeris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of AU2002348053A1 publication Critical patent/AU2002348053A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
    • H05B6/108—Induction heating apparatus, other than furnaces, for specific applications using a susceptor for heating a fluid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • General Induction Heating (AREA)
AU2002348053A 2001-10-30 2002-10-24 Induction heating devices and methods for controllably heating an article Abandoned AU2002348053A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/017,492 2001-10-30
US10/017,492 US6896738B2 (en) 2001-10-30 2001-10-30 Induction heating devices and methods for controllably heating an article
PCT/US2002/034090 WO2003039195A2 (en) 2001-10-30 2002-10-24 Induction heating devices and methods for controllably heating an article

Publications (1)

Publication Number Publication Date
AU2002348053A1 true AU2002348053A1 (en) 2003-05-12

Family

ID=21782889

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002348053A Abandoned AU2002348053A1 (en) 2001-10-30 2002-10-24 Induction heating devices and methods for controllably heating an article

Country Status (11)

Country Link
US (3) US6896738B2 (https=)
EP (1) EP1449407B1 (https=)
JP (1) JP2005508097A (https=)
KR (1) KR20050039709A (https=)
CN (1) CN1611095A (https=)
AT (1) ATE412331T1 (https=)
AU (1) AU2002348053A1 (https=)
CA (1) CA2464855A1 (https=)
DE (1) DE60229549D1 (https=)
TW (1) TWI274081B (https=)
WO (1) WO2003039195A2 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613587B1 (en) * 2002-04-11 2003-09-02 Micron Technology, Inc. Method of replacing at least a portion of a semiconductor substrate deposition chamber liner
US7256375B2 (en) * 2002-08-30 2007-08-14 Asm International N.V. Susceptor plate for high temperature heat treatment
EP1615261B8 (en) * 2003-04-02 2019-09-18 SUMCO Corporation Semiconductor wafer heat treatment jig
US7181132B2 (en) 2003-08-20 2007-02-20 Asm International N.V. Method and system for loading substrate supports into a substrate holder
JP2005197464A (ja) * 2004-01-07 2005-07-21 Rohm Co Ltd 半導体装置の製造方法
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
TW200609371A (en) * 2004-05-18 2006-03-16 Univ Arkansas Apparatus and methods of making nanostructures by inductive heating
US7365289B2 (en) * 2004-05-18 2008-04-29 The United States Of America As Represented By The Department Of Health And Human Services Production of nanostructures by curie point induction heating
US7473873B2 (en) * 2004-05-18 2009-01-06 The Board Of Trustees Of The University Of Arkansas Apparatus and methods for synthesis of large size batches of carbon nanostructures
US9612215B2 (en) 2004-07-22 2017-04-04 Toyo Tanso Co., Ltd. Susceptor
US20060065634A1 (en) * 2004-09-17 2006-03-30 Van Den Berg Jannes R Low temperature susceptor cleaning
US20060060145A1 (en) * 2004-09-17 2006-03-23 Van Den Berg Jannes R Susceptor with surface roughness for high temperature substrate processing
CN100487862C (zh) * 2005-09-07 2009-05-13 财团法人工业技术研究院 形成多晶硅薄膜的方法
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
ITMI20052498A1 (it) * 2005-12-28 2007-06-29 Lpe Spa Camera di reazione a temperatura differenziata
CA2584950A1 (en) * 2006-04-26 2007-10-26 Kansai Paint Co., Ltd. Powder primer composition and method for forming coating film
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
JP5051875B2 (ja) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 成膜装置および成膜方法
JP5202839B2 (ja) * 2006-12-25 2013-06-05 東京エレクトロン株式会社 成膜装置および成膜方法
JP5138212B2 (ja) 2006-12-25 2013-02-06 東京エレクトロン株式会社 成膜装置
JP5126095B2 (ja) * 2008-02-05 2013-01-23 東京エレクトロン株式会社 加熱装置及び加熱方法
US9328417B2 (en) * 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
US8536582B2 (en) 2008-12-01 2013-09-17 Cree, Inc. Stable power devices on low-angle off-cut silicon carbide crystals
US8574528B2 (en) * 2009-09-04 2013-11-05 University Of South Carolina Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
CN102465335B (zh) * 2010-11-18 2014-07-16 南京大学 一种用于半导体材料热壁外延生长系统的加热装置
CN103160810B (zh) * 2011-12-09 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种用于感应加热的托盘及等离子体加工设备
CN103422073A (zh) * 2012-05-24 2013-12-04 北京北方微电子基地设备工艺研究中心有限责任公司 用于感应加热的托盘及等离子体加工设备
CN103794528B (zh) * 2012-10-30 2016-09-28 北京北方微电子基地设备工艺研究中心有限责任公司 半导体加工设备
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
JP6097681B2 (ja) 2013-12-24 2017-03-15 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造装置およびＳｉＣエピタキシャルウェハの製造方法
KR101431606B1 (ko) * 2014-02-24 2014-08-22 (주)앤피에스 기판 처리 장치
CN104046964B (zh) * 2014-07-01 2016-05-11 清华大学 热功率密度径向分布可调的电磁感应加热装置
JP6444641B2 (ja) * 2014-07-24 2018-12-26 株式会社ニューフレアテクノロジー 成膜装置、サセプタ、及び成膜方法
JP2017055086A (ja) * 2015-09-11 2017-03-16 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置
CN108603290B (zh) * 2015-10-01 2021-09-10 环球晶圆股份有限公司 Cvd设备
US10407769B2 (en) * 2016-03-18 2019-09-10 Goodrich Corporation Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces
JP6635871B2 (ja) * 2016-05-11 2020-01-29 東京エレクトロン株式会社 成膜装置
DE102017122229A1 (de) * 2017-09-26 2019-03-28 Pstproducts Gmbh EMPT Spule mit austauschbarem Leiter
US20250259864A1 (en) * 2024-02-12 2025-08-14 Agnitron Technology, Inc. Rapid thermal cycling annealing apparatus

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US633121A (en) * 1897-09-29 1899-09-19 Arthur John Cuming Spring-frame for bicycles.
US3424628A (en) 1966-01-24 1969-01-28 Western Electric Co Methods and apparatus for treating semi-conductive materials with gases
US3868924A (en) * 1969-06-30 1975-03-04 Siemens Ag Apparatus for indiffusing dopants into semiconductor material
US3845738A (en) * 1973-09-12 1974-11-05 Rca Corp Vapor deposition apparatus with pyrolytic graphite heat shield
FR2581711B1 (fr) 1985-05-13 1987-11-20 Labo Electronique Physique Dispositif pour la regulation, l'interruption ou la commutation de fluides
FR2591616A1 (fr) 1985-12-17 1987-06-19 Labo Electronique Physique Chambre de reacteur pour croissance epitaxiale en phase vapeur des materiaux semiconducteurs.
FR2596070A1 (fr) * 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan
FR2599558B1 (fr) 1986-05-27 1988-09-02 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat
US4699805A (en) * 1986-07-03 1987-10-13 Motorola Inc. Process and apparatus for the low pressure chemical vapor deposition of thin films
JPS6427225A (en) * 1987-07-22 1989-01-30 Fujitsu Ltd Vapor growth system
US4845332A (en) * 1987-09-16 1989-07-04 National Steel Corp. Galvanneal induction furnace temperature control system
FR2628984B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
FR2628985B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
FR2638020B1 (fr) 1988-10-14 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a collecteur de gaz ameliore
FR2648890B1 (fr) 1989-06-27 1991-09-13 Labo Electronique Physique Dispositif de protection contre une surpression
US5119540A (en) 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
JPH07176482A (ja) 1991-05-31 1995-07-14 At & T Corp エピタキシャル成長方法および装置
US5226383A (en) 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
US5558721A (en) 1993-11-15 1996-09-24 The Furukawa Electric Co., Ltd. Vapor phase growth system and a gas-drive motor
US5468299A (en) 1995-01-09 1995-11-21 Tsai; Charles S. Device comprising a flat susceptor rotating parallel to a reference surface about a shaft perpendicular to this surface
SE9500326D0 (sv) 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
SE9502288D0 (sv) 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
US6030661A (en) 1995-08-04 2000-02-29 Abb Research Ltd. Device and a method for epitaxially growing objects by CVD
SE9503426D0 (sv) 1995-10-04 1995-10-04 Abb Research Ltd A device for heat treatment of objects and a method for producing a susceptor
SE9503428D0 (sv) 1995-10-04 1995-10-04 Abb Research Ltd A method for epitaxially growing objects and a device for such a growth
DE19603323A1 (de) * 1996-01-30 1997-08-07 Siemens Ag Verfahren und Vorrichtung zum Herstellen von SiC durch CVD mit verbesserter Gasausnutzung
SE9600704D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
JP4050318B2 (ja) 1996-02-26 2008-02-20 クリー、インコーポレイテッド デバイスなどの物体をエピタキシャル成長させる装置用のサセプタ
SE9600705D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5747113A (en) 1996-07-29 1998-05-05 Tsai; Charles Su-Chang Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation
DE19642673A1 (de) 1996-10-16 1998-04-23 Widia Gmbh Mikrowellenofen und Bauteile hierfür
US6039812A (en) 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
US5759263A (en) 1996-12-05 1998-06-02 Abb Research Ltd. Device and a method for epitaxially growing objects by cvd
US5667587A (en) * 1996-12-18 1997-09-16 Northrop Gruman Corporation Apparatus for growing silicon carbide crystals
US5788777A (en) 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
JP2001518706A (ja) * 1997-09-30 2001-10-16 インフィネオン テクノロジース アクチエンゲゼルシャフト インプランテーションによってドープされたシリコンカーバード半導体を熱的に回復させる方法
US6005226A (en) 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
DE19803423C2 (de) * 1998-01-29 2001-02-08 Siemens Ag Substrathalterung für SiC-Epitaxie und Verfahren zum Herstellen eines Einsatzes für einen Suszeptor
SE9801190D0 (sv) 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
FR2786208B1 (fr) * 1998-11-25 2001-02-09 Centre Nat Rech Scient Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre
US6449428B2 (en) 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
US6368404B1 (en) * 1999-04-23 2002-04-09 Emcore Corporation Induction heated chemical vapor deposition reactor
US6331212B1 (en) * 2000-04-17 2001-12-18 Avansys, Llc Methods and apparatus for thermally processing wafers
US6399510B1 (en) * 2000-09-12 2002-06-04 Applied Materials, Inc. Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates
US6569250B2 (en) * 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers

Also Published As

Publication number Publication date
DE60229549D1 (de) 2008-12-04
EP1449407A2 (en) 2004-08-25
TWI274081B (en) 2007-02-21
WO2003039195A2 (en) 2003-05-08
US20080127894A1 (en) 2008-06-05
US7390367B1 (en) 2008-06-24
US9155131B2 (en) 2015-10-06
JP2005508097A (ja) 2005-03-24
WO2003039195A3 (en) 2003-12-04
EP1449407B1 (en) 2008-10-22
US6896738B2 (en) 2005-05-24
CA2464855A1 (en) 2003-05-08
TW200302290A (en) 2003-08-01
KR20050039709A (ko) 2005-04-29
US20090136686A1 (en) 2009-05-28
US20030079689A1 (en) 2003-05-01
ATE412331T1 (de) 2008-11-15
CN1611095A (zh) 2005-04-27

Similar Documents

Publication Publication Date Title
AU2002348053A1 (en) Induction heating devices and methods for controllably heating an article
TW349235B (en) Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
WO2002031219A8 (en) Electrostatically clamped edge ring for plasma processing
WO2003040513A3 (en) In situ thermal processing of a hydrocarbon containing formation
WO2003096747A3 (en) Plasma heating apparatus and methods
EP0861539A4 (en) EFFICIENT CRYPTOGRAPHIC HASH FUNCTIONS AND METHOD FOR INCREASING THE SECURITY OF HASH FUNCTIONS AND PSEUDO RANDOM FUNCTIONS
CA2451036A1 (en) Method and apparatus for temperature control of an object
NO911440L (no) Fremgangsmaate for oppvarming av en transportroerledning, samt transportroerledning med oppvarming.
AU2002368438A1 (en) Susceptor system________________________
EP1293577A3 (en) Induction processing with the aid of a conductive shield
GB2413443A (en) Electric power apparatus for an electromagnetic induction fixing apparatus and for an image forming apparatus using the same
ATA14298A (de) Vorrichtung zum bedienen eines elektrischen küchenherdes
WO2003041089A3 (en) Irradiation apparatus and method
BR0105555A (pt) Dispositivo eletrônico blindado
WO2006011991A3 (en) Apparatus for an optimized plasma chamber top piece
WO2000008897A3 (en) Adjustable microwave field stop
AU2001239526A1 (en) Cooling system for an enclosure for heat sensitive components and method
AU6938098A (en) Apparatus and method for cooling an electronic heat source
AU2001268601A1 (en) Methods and apparatus for reducing vibrations induced within fan assemblies
EP1377125A4 (en) THERMO-INSULATING PANEL OF INDUCTION HEATING APPARATUS
FR2847115A1 (fr) Dispositif inducteur pour foyer de cuisson par induction
AU2002347324A8 (en) Turntable incorporating heating means and oven incorporating the same
AU2002364360A1 (en) Method and device for the detection of non-homogeneities in the shielding behavior of shielded electric conductors
AU2001262764A1 (en) The device and method for the regulation of gene expression with cyclic electromagnetic field
MY126811A (en) Dc or ac electric field assisted anneal

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase