ITMI20052498A1 - Camera di reazione a temperatura differenziata - Google Patents

Camera di reazione a temperatura differenziata

Info

Publication number
ITMI20052498A1
ITMI20052498A1 IT002498A ITMI20052498A ITMI20052498A1 IT MI20052498 A1 ITMI20052498 A1 IT MI20052498A1 IT 002498 A IT002498 A IT 002498A IT MI20052498 A ITMI20052498 A IT MI20052498A IT MI20052498 A1 ITMI20052498 A1 IT MI20052498A1
Authority
IT
Italy
Prior art keywords
reaction chamber
differentiated temperature
differentiated
temperature
chamber
Prior art date
Application number
IT002498A
Other languages
English (en)
Inventor
Danilo Crippa
Giacomo Nicolao Maccalli
Franco Preti
Gianluca Valente
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to IT002498A priority Critical patent/ITMI20052498A1/it
Priority to RU2008121715/15A priority patent/RU2008121715A/ru
Priority to PCT/IB2006/003664 priority patent/WO2007088420A2/en
Priority to US12/159,035 priority patent/US20100037825A1/en
Priority to CNA2006800496320A priority patent/CN101351578A/zh
Priority to EP06831746A priority patent/EP1966414A2/en
Priority to KR1020087014708A priority patent/KR20080079263A/ko
Priority to JP2008548040A priority patent/JP2009522766A/ja
Publication of ITMI20052498A1 publication Critical patent/ITMI20052498A1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
    • F27B14/061—Induction furnaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/0003—Linings or walls
    • F27D1/0006—Linings or walls formed from bricks or layers with a particular composition or specific characteristics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
IT002498A 2005-12-28 2005-12-28 Camera di reazione a temperatura differenziata ITMI20052498A1 (it)

Priority Applications (8)

Application Number Priority Date Filing Date Title
IT002498A ITMI20052498A1 (it) 2005-12-28 2005-12-28 Camera di reazione a temperatura differenziata
RU2008121715/15A RU2008121715A (ru) 2005-12-28 2006-12-18 Реакционная камера с дифференцированной температурой
PCT/IB2006/003664 WO2007088420A2 (en) 2005-12-28 2006-12-18 Differentiated-temperature reaction chamber
US12/159,035 US20100037825A1 (en) 2005-12-28 2006-12-18 Differentiated-temperature reaction chamber
CNA2006800496320A CN101351578A (zh) 2005-12-28 2006-12-18 不同温度反应室
EP06831746A EP1966414A2 (en) 2005-12-28 2006-12-18 Differentiated-temperature reaction chamber
KR1020087014708A KR20080079263A (ko) 2005-12-28 2006-12-18 차등화된 온도의 반응 챔버
JP2008548040A JP2009522766A (ja) 2005-12-28 2006-12-18 温度区別化された反応チャンバ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT002498A ITMI20052498A1 (it) 2005-12-28 2005-12-28 Camera di reazione a temperatura differenziata

Publications (1)

Publication Number Publication Date
ITMI20052498A1 true ITMI20052498A1 (it) 2007-06-29

Family

ID=38327748

Family Applications (1)

Application Number Title Priority Date Filing Date
IT002498A ITMI20052498A1 (it) 2005-12-28 2005-12-28 Camera di reazione a temperatura differenziata

Country Status (8)

Country Link
US (1) US20100037825A1 (it)
EP (1) EP1966414A2 (it)
JP (1) JP2009522766A (it)
KR (1) KR20080079263A (it)
CN (1) CN101351578A (it)
IT (1) ITMI20052498A1 (it)
RU (1) RU2008121715A (it)
WO (1) WO2007088420A2 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104141169B (zh) * 2013-05-07 2016-08-31 中芯国际集成电路制造(上海)有限公司 一种用于锗硅外延生长的反应室、方法及半导体制造设备
ITCO20130073A1 (it) 2013-12-19 2015-06-20 Lpe Spa Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore
EP3164884B1 (en) 2014-07-03 2022-02-23 LPE S.p.A. Tool for manipulating substrates, manipulation method and epitaxial reactor
IT201800011158A1 (it) * 2018-12-17 2020-06-17 Lpe Spa Camera di reazione per un reattore epitassiale di materiale semiconduttore con sezione longitudinale non-uniforme e reattore
IT202000021517A1 (it) 2020-09-11 2022-03-11 Lpe Spa Metodo per deposizione cvd di carburo di silicio con drogaggio di tipo n e reattore epitassiale

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10055033A1 (de) * 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
US6896738B2 (en) * 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
US20030160044A1 (en) * 2002-02-25 2003-08-28 Besmann Theodore M. High efficiency, oxidation resistant radio frequency susceptor
CN100507073C (zh) * 2002-12-10 2009-07-01 Etc外延技术中心有限公司 感受器系统
WO2004053188A1 (en) * 2002-12-10 2004-06-24 E.T.C. Epitaxial Technology Center Srl Susceptor system
DE102004062553A1 (de) * 2004-12-24 2006-07-06 Aixtron Ag CVD-Reaktor mit RF-geheizter Prozesskammer

Also Published As

Publication number Publication date
WO2007088420A3 (en) 2008-01-03
JP2009522766A (ja) 2009-06-11
CN101351578A (zh) 2009-01-21
US20100037825A1 (en) 2010-02-18
WO2007088420A2 (en) 2007-08-09
RU2008121715A (ru) 2010-02-10
KR20080079263A (ko) 2008-08-29
EP1966414A2 (en) 2008-09-10

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