KR20050039709A - 물품을 제어가능하게 가열하는 방법 및 유도 가열 장치 - Google Patents
물품을 제어가능하게 가열하는 방법 및 유도 가열 장치 Download PDFInfo
- Publication number
- KR20050039709A KR20050039709A KR1020047006333A KR20047006333A KR20050039709A KR 20050039709 A KR20050039709 A KR 20050039709A KR 1020047006333 A KR1020047006333 A KR 1020047006333A KR 20047006333 A KR20047006333 A KR 20047006333A KR 20050039709 A KR20050039709 A KR 20050039709A
- Authority
- KR
- South Korea
- Prior art keywords
- platter
- liner
- article
- work chamber
- magnetized body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 55
- 230000006698 induction Effects 0.000 title claims description 6
- 239000004020 conductor Substances 0.000 claims abstract description 26
- 238000000576 coating method Methods 0.000 claims description 52
- 230000005415 magnetization Effects 0.000 claims description 49
- 239000011248 coating agent Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 23
- 230000005672 electromagnetic field Effects 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 239000003870 refractory metal Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 22
- 229910010271 silicon carbide Inorganic materials 0.000 description 21
- 239000007789 gas Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 8
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910003468 tantalcarbide Inorganic materials 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
- H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
- H05B6/108—Induction heating apparatus, other than furnaces, for specific applications using a susceptor for heating a fluid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- General Induction Heating (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/017,492 | 2001-10-30 | ||
| US10/017,492 US6896738B2 (en) | 2001-10-30 | 2001-10-30 | Induction heating devices and methods for controllably heating an article |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050039709A true KR20050039709A (ko) | 2005-04-29 |
Family
ID=21782889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020047006333A Withdrawn KR20050039709A (ko) | 2001-10-30 | 2002-10-24 | 물품을 제어가능하게 가열하는 방법 및 유도 가열 장치 |
Country Status (11)
| Country | Link |
|---|---|
| US (3) | US6896738B2 (https=) |
| EP (1) | EP1449407B1 (https=) |
| JP (1) | JP2005508097A (https=) |
| KR (1) | KR20050039709A (https=) |
| CN (1) | CN1611095A (https=) |
| AT (1) | ATE412331T1 (https=) |
| AU (1) | AU2002348053A1 (https=) |
| CA (1) | CA2464855A1 (https=) |
| DE (1) | DE60229549D1 (https=) |
| TW (1) | TWI274081B (https=) |
| WO (1) | WO2003039195A2 (https=) |
Families Citing this family (41)
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| EP1615261B8 (en) * | 2003-04-02 | 2019-09-18 | SUMCO Corporation | Semiconductor wafer heat treatment jig |
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| JP2005197464A (ja) * | 2004-01-07 | 2005-07-21 | Rohm Co Ltd | 半導体装置の製造方法 |
| US7230274B2 (en) * | 2004-03-01 | 2007-06-12 | Cree, Inc | Reduction of carrot defects in silicon carbide epitaxy |
| US7173285B2 (en) * | 2004-03-18 | 2007-02-06 | Cree, Inc. | Lithographic methods to reduce stacking fault nucleation sites |
| US7109521B2 (en) * | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
| TW200609371A (en) * | 2004-05-18 | 2006-03-16 | Univ Arkansas | Apparatus and methods of making nanostructures by inductive heating |
| US7365289B2 (en) * | 2004-05-18 | 2008-04-29 | The United States Of America As Represented By The Department Of Health And Human Services | Production of nanostructures by curie point induction heating |
| US7473873B2 (en) * | 2004-05-18 | 2009-01-06 | The Board Of Trustees Of The University Of Arkansas | Apparatus and methods for synthesis of large size batches of carbon nanostructures |
| US9612215B2 (en) | 2004-07-22 | 2017-04-04 | Toyo Tanso Co., Ltd. | Susceptor |
| US20060065634A1 (en) * | 2004-09-17 | 2006-03-30 | Van Den Berg Jannes R | Low temperature susceptor cleaning |
| US20060060145A1 (en) * | 2004-09-17 | 2006-03-23 | Van Den Berg Jannes R | Susceptor with surface roughness for high temperature substrate processing |
| CN100487862C (zh) * | 2005-09-07 | 2009-05-13 | 财团法人工业技术研究院 | 形成多晶硅薄膜的方法 |
| US8052794B2 (en) * | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
| ITMI20052498A1 (it) * | 2005-12-28 | 2007-06-29 | Lpe Spa | Camera di reazione a temperatura differenziata |
| CA2584950A1 (en) * | 2006-04-26 | 2007-10-26 | Kansai Paint Co., Ltd. | Powder primer composition and method for forming coating film |
| US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
| JP5051875B2 (ja) * | 2006-12-25 | 2012-10-17 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| JP5202839B2 (ja) * | 2006-12-25 | 2013-06-05 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| JP5138212B2 (ja) | 2006-12-25 | 2013-02-06 | 東京エレクトロン株式会社 | 成膜装置 |
| JP5126095B2 (ja) * | 2008-02-05 | 2013-01-23 | 東京エレクトロン株式会社 | 加熱装置及び加熱方法 |
| US9328417B2 (en) * | 2008-11-01 | 2016-05-03 | Ultratech, Inc. | System and method for thin film deposition |
| US8536582B2 (en) | 2008-12-01 | 2013-09-17 | Cree, Inc. | Stable power devices on low-angle off-cut silicon carbide crystals |
| US8574528B2 (en) * | 2009-09-04 | 2013-11-05 | University Of South Carolina | Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime |
| CN102465335B (zh) * | 2010-11-18 | 2014-07-16 | 南京大学 | 一种用于半导体材料热壁外延生长系统的加热装置 |
| CN103160810B (zh) * | 2011-12-09 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种用于感应加热的托盘及等离子体加工设备 |
| CN103422073A (zh) * | 2012-05-24 | 2013-12-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 用于感应加热的托盘及等离子体加工设备 |
| CN103794528B (zh) * | 2012-10-30 | 2016-09-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 半导体加工设备 |
| US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
| JP6097681B2 (ja) | 2013-12-24 | 2017-03-15 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造装置およびＳｉＣエピタキシャルウェハの製造方法 |
| KR101431606B1 (ko) * | 2014-02-24 | 2014-08-22 | (주)앤피에스 | 기판 처리 장치 |
| CN104046964B (zh) * | 2014-07-01 | 2016-05-11 | 清华大学 | 热功率密度径向分布可调的电磁感应加热装置 |
| JP6444641B2 (ja) * | 2014-07-24 | 2018-12-26 | 株式会社ニューフレアテクノロジー | 成膜装置、サセプタ、及び成膜方法 |
| JP2017055086A (ja) * | 2015-09-11 | 2017-03-16 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置 |
| CN108603290B (zh) * | 2015-10-01 | 2021-09-10 | 环球晶圆股份有限公司 | Cvd设备 |
| US10407769B2 (en) * | 2016-03-18 | 2019-09-10 | Goodrich Corporation | Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces |
| JP6635871B2 (ja) * | 2016-05-11 | 2020-01-29 | 東京エレクトロン株式会社 | 成膜装置 |
| DE102017122229A1 (de) * | 2017-09-26 | 2019-03-28 | Pstproducts Gmbh | EMPT Spule mit austauschbarem Leiter |
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-
2001
- 2001-10-30 US US10/017,492 patent/US6896738B2/en not_active Expired - Lifetime
-
2002
- 2002-10-24 EP EP02784266A patent/EP1449407B1/en not_active Expired - Lifetime
- 2002-10-24 CA CA002464855A patent/CA2464855A1/en not_active Abandoned
- 2002-10-24 AU AU2002348053A patent/AU2002348053A1/en not_active Abandoned
- 2002-10-24 DE DE60229549T patent/DE60229549D1/de not_active Expired - Lifetime
- 2002-10-24 WO PCT/US2002/034090 patent/WO2003039195A2/en not_active Ceased
- 2002-10-24 CN CNA028265289A patent/CN1611095A/zh active Pending
- 2002-10-24 KR KR1020047006333A patent/KR20050039709A/ko not_active Withdrawn
- 2002-10-24 AT AT02784266T patent/ATE412331T1/de not_active IP Right Cessation
- 2002-10-24 JP JP2003541310A patent/JP2005508097A/ja active Pending
- 2002-10-29 TW TW091132074A patent/TWI274081B/zh not_active IP Right Cessation
-
2003
- 2003-11-14 US US10/714,214 patent/US7390367B1/en not_active Expired - Lifetime
-
2008
- 2008-05-15 US US12/121,072 patent/US9155131B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE60229549D1 (de) | 2008-12-04 |
| EP1449407A2 (en) | 2004-08-25 |
| TWI274081B (en) | 2007-02-21 |
| WO2003039195A2 (en) | 2003-05-08 |
| US20080127894A1 (en) | 2008-06-05 |
| US7390367B1 (en) | 2008-06-24 |
| US9155131B2 (en) | 2015-10-06 |
| JP2005508097A (ja) | 2005-03-24 |
| AU2002348053A1 (en) | 2003-05-12 |
| WO2003039195A3 (en) | 2003-12-04 |
| EP1449407B1 (en) | 2008-10-22 |
| US6896738B2 (en) | 2005-05-24 |
| CA2464855A1 (en) | 2003-05-08 |
| TW200302290A (en) | 2003-08-01 |
| US20090136686A1 (en) | 2009-05-28 |
| US20030079689A1 (en) | 2003-05-01 |
| ATE412331T1 (de) | 2008-11-15 |
| CN1611095A (zh) | 2005-04-27 |
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| PA0105 | International application |
Patent event date: 20040428 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |