TWI264826B - Semiconductor device with integrated flash memory and peripheral circuit and its manufacture method - Google Patents
Semiconductor device with integrated flash memory and peripheral circuit and its manufacture methodInfo
- Publication number
- TWI264826B TWI264826B TW094125233A TW94125233A TWI264826B TW I264826 B TWI264826 B TW I264826B TW 094125233 A TW094125233 A TW 094125233A TW 94125233 A TW94125233 A TW 94125233A TW I264826 B TWI264826 B TW I264826B
- Authority
- TW
- Taiwan
- Prior art keywords
- peripheral circuit
- gate
- side wall
- volatile memory
- same layer
- Prior art date
Links
- 230000002093 peripheral effect Effects 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 2
- 239000002356 single layer Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005100459A JP4558557B2 (ja) | 2005-03-31 | 2005-03-31 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200635048A TW200635048A (en) | 2006-10-01 |
| TWI264826B true TWI264826B (en) | 2006-10-21 |
Family
ID=34979283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094125233A TWI264826B (en) | 2005-03-31 | 2005-07-26 | Semiconductor device with integrated flash memory and peripheral circuit and its manufacture method |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7504688B2 (zh) |
| EP (1) | EP1708266B1 (zh) |
| JP (1) | JP4558557B2 (zh) |
| KR (1) | KR100702026B1 (zh) |
| CN (1) | CN100483718C (zh) |
| TW (1) | TWI264826B (zh) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4992722B2 (ja) * | 2005-12-14 | 2012-08-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| KR100850124B1 (ko) * | 2007-07-11 | 2008-08-04 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
| KR101191818B1 (ko) * | 2007-07-31 | 2012-10-16 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
| JP2010245160A (ja) * | 2009-04-02 | 2010-10-28 | Renesas Electronics Corp | 半導体装置の製造方法 |
| JP5778900B2 (ja) * | 2010-08-20 | 2015-09-16 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US8431471B2 (en) * | 2010-11-22 | 2013-04-30 | Freescale Semiconductor, Inc. | Method for integrating a non-volatile memory (NVM) |
| KR20120083142A (ko) * | 2011-01-17 | 2012-07-25 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 형성 방법 |
| JP2013254815A (ja) * | 2012-06-06 | 2013-12-19 | Ps4 Luxco S A R L | 半導体装置およびその製造方法 |
| KR102373816B1 (ko) | 2015-08-06 | 2022-03-15 | 삼성전자주식회사 | 반도체 소자 |
| KR102425395B1 (ko) * | 2016-01-22 | 2022-07-27 | 에스케이하이닉스 주식회사 | 반도체 메모리 소자의 배치 구조 |
| US10163641B2 (en) * | 2016-08-15 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory with a raised dummy feature surrounding a cell region |
| US11211388B2 (en) | 2017-11-14 | 2021-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Array boundfary structure to reduce dishing |
| KR102167959B1 (ko) * | 2017-11-14 | 2020-10-21 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 반도체 구조체 및 그 제조 방법 |
| CN107994032B (zh) * | 2017-11-23 | 2019-01-01 | 长江存储科技有限责任公司 | 防止外围电路受损的方法及结构 |
| TWI811517B (zh) * | 2020-01-16 | 2023-08-11 | 聯華電子股份有限公司 | 磁阻式隨機存取記憶體之佈局圖案 |
| CN113192959B (zh) * | 2021-04-27 | 2023-11-03 | 上海华虹宏力半导体制造有限公司 | 分栅式快闪存储器的制造方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2005A (en) * | 1841-03-16 | Improvement in the manner of constructing molds for casting butt-hinges | ||
| JP3363502B2 (ja) * | 1993-02-01 | 2003-01-08 | 三菱電機株式会社 | 半導体記憶装置の製造方法 |
| JP3442596B2 (ja) | 1996-11-28 | 2003-09-02 | 富士通株式会社 | 半導体装置の製造方法 |
| KR100219535B1 (ko) * | 1997-01-31 | 1999-09-01 | 윤종용 | 비휘발성 반도체 메모리장치 및 그 제조방법 |
| WO1998044567A1 (fr) * | 1997-03-28 | 1998-10-08 | Hitachi, Ltd. | Dispositif de memoire remanente a semi-conducteur, dispositif a semi-conducteur et procedes de fabrication associes de ceux-ci |
| KR100244292B1 (ko) * | 1997-07-09 | 2000-02-01 | 김영환 | 비휘발성 메모리 소자의 제조방법 |
| JP3586072B2 (ja) * | 1997-07-10 | 2004-11-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP3967440B2 (ja) * | 1997-12-09 | 2007-08-29 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JPH11186528A (ja) * | 1997-12-25 | 1999-07-09 | Sony Corp | 不揮発性半導体記憶装置及びその製造方法 |
| US6166958A (en) * | 1998-07-09 | 2000-12-26 | Kabushiki Kaisha Toshiba | Semiconductor memory device, method for manufacturing the same, and method for controlling the same |
| JP3773728B2 (ja) | 1999-01-26 | 2006-05-10 | Ｎｅｃエレクトロニクス株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JP3425882B2 (ja) * | 1999-03-04 | 2003-07-14 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6472259B1 (en) * | 1999-04-01 | 2002-10-29 | Asahi Kasei Microsystems Co., Ltd. | Method of manufacturing semiconductor device |
| JP4733810B2 (ja) * | 2000-05-25 | 2011-07-27 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置およびその製造方法 |
| EP1172856A1 (en) * | 2000-07-03 | 2002-01-16 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile semiconductor memory device and method for fabricating the same |
| US6774429B2 (en) | 2000-08-10 | 2004-08-10 | Matsushita Electric Industrial Co., Ltd. | Hybrid semiconductor device with a poly-metal gate structure |
| JP3773425B2 (ja) * | 2000-08-10 | 2006-05-10 | 松下電器産業株式会社 | 半導体記憶装置の製造方法 |
| US6531350B2 (en) | 2001-02-22 | 2003-03-11 | Halo, Inc. | Twin MONOS cell fabrication method and array organization |
| JP2003086703A (ja) * | 2001-09-13 | 2003-03-20 | Sony Corp | 半導体装置及びその製造方法 |
| JP2004047943A (ja) * | 2002-03-20 | 2004-02-12 | Fujitsu Ltd | 半導体装置 |
| JP2004119937A (ja) * | 2002-09-30 | 2004-04-15 | Fujitsu Ltd | 半導体記憶装置 |
| ES1053226Y (es) | 2002-10-31 | 2003-07-01 | Lopez Aleix Millet | Casco protector con air-bag incorporado. |
| JP4472633B2 (ja) | 2003-06-10 | 2010-06-02 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路装置および半導体集積回路装置の製造方法 |
| JPWO2004112139A1 (ja) | 2003-06-10 | 2006-09-28 | 富士通株式会社 | 半導体装置とその製造方法 |
| US6930351B2 (en) * | 2003-08-14 | 2005-08-16 | Renesas Technology Corp. | Semiconductor device with dummy gate electrode |
| TWI253746B (en) * | 2003-10-24 | 2006-04-21 | Fujitsu Ltd | Semiconductor device group and method for fabricating the same, and semiconductor device and method for fabricating the same |
| JP4429036B2 (ja) * | 2004-02-27 | 2010-03-10 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP4074292B2 (ja) * | 2005-01-17 | 2008-04-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
2005
- 2005-03-31 JP JP2005100459A patent/JP4558557B2/ja not_active Expired - Fee Related
- 2005-07-20 EP EP05254538.1A patent/EP1708266B1/en not_active Not-in-force
- 2005-07-26 TW TW094125233A patent/TWI264826B/zh active
- 2005-08-09 KR KR1020050072622A patent/KR100702026B1/ko active IP Right Grant
- 2005-08-11 US US11/201,212 patent/US7504688B2/en active Active
- 2005-08-15 CN CNB2005100919801A patent/CN100483718C/zh active Active
-
2009
- 2009-02-04 US US12/320,753 patent/US7767523B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP1708266A2 (en) | 2006-10-04 |
| CN1841751A (zh) | 2006-10-04 |
| US7504688B2 (en) | 2009-03-17 |
| TW200635048A (en) | 2006-10-01 |
| US7767523B2 (en) | 2010-08-03 |
| EP1708266A3 (en) | 2008-10-29 |
| KR20060106574A (ko) | 2006-10-12 |
| US20090191700A1 (en) | 2009-07-30 |
| CN100483718C (zh) | 2009-04-29 |
| US20060226469A1 (en) | 2006-10-12 |
| EP1708266B1 (en) | 2016-10-12 |
| JP2006286675A (ja) | 2006-10-19 |
| JP4558557B2 (ja) | 2010-10-06 |
| KR100702026B1 (ko) | 2007-03-30 |
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