TWI263385B - Making method and device of a membrane of crystallization - Google Patents

Making method and device of a membrane of crystallization Download PDF

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Publication number
TWI263385B
TWI263385B TW094126366A TW94126366A TWI263385B TW I263385 B TWI263385 B TW I263385B TW 094126366 A TW094126366 A TW 094126366A TW 94126366 A TW94126366 A TW 94126366A TW I263385 B TWI263385 B TW I263385B
Authority
TW
Taiwan
Prior art keywords
light
optical path
path difference
lens
laser light
Prior art date
Application number
TW094126366A
Other languages
English (en)
Chinese (zh)
Other versions
TW200610240A (en
Inventor
Naoyuki Kobayashi
Hideaki Kusama
Toshio Inami
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Publication of TW200610240A publication Critical patent/TW200610240A/zh
Application granted granted Critical
Publication of TWI263385B publication Critical patent/TWI263385B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Laser Surgery Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)
TW094126366A 2004-08-06 2005-08-03 Making method and device of a membrane of crystallization TWI263385B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004230095A JP4291230B2 (ja) 2004-08-06 2004-08-06 結晶化膜の形成方法及びその装置

Publications (2)

Publication Number Publication Date
TW200610240A TW200610240A (en) 2006-03-16
TWI263385B true TWI263385B (en) 2006-10-01

Family

ID=35787099

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094126366A TWI263385B (en) 2004-08-06 2005-08-03 Making method and device of a membrane of crystallization

Country Status (5)

Country Link
JP (1) JP4291230B2 (ja)
KR (1) KR100755229B1 (ja)
DE (1) DE112005001847B4 (ja)
TW (1) TWI263385B (ja)
WO (1) WO2006013814A1 (ja)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070127005A1 (en) 2005-12-02 2007-06-07 Asml Holding N.V. Illumination system
JP4478670B2 (ja) 2006-09-08 2010-06-09 ソニー株式会社 １次元照明装置及び画像生成装置
KR100842598B1 (ko) 2006-09-15 2008-07-01 엘지전자 주식회사 마이크로 렌즈 어레이를 이용한 스크린 및 디스플레이 장치
JP2008124149A (ja) * 2006-11-09 2008-05-29 Advanced Lcd Technologies Development Center Co Ltd 光学装置および結晶化装置
KR100858084B1 (ko) 2006-12-01 2008-09-10 삼성전자주식회사 스펙클 노이즈를 저감하는 형상을 갖는 확산자 및 이를채용한 레이저 프로젝션 시스템
JP4311453B2 (ja) * 2007-01-26 2009-08-12 ソニー株式会社 レーザ光源装置及びこれを用いた画像生成装置
DE102008054582A1 (de) 2007-12-21 2009-07-09 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
DE102009037141B4 (de) * 2009-07-31 2013-01-03 Carl Zeiss Laser Optics Gmbh Optisches System zum Erzeugen eines Lichtstrahls zur Behandlung eines Substrats
JP2011164151A (ja) 2010-02-04 2011-08-25 Sony Corp 照明装置および投射型映像表示装置
EP2506291A1 (en) * 2011-03-28 2012-10-03 Excico France Method and apparatus for forming a straight line projection on a semiconductor substrate
JP5168526B2 (ja) 2011-05-10 2013-03-21 大日本印刷株式会社 投射型映像表示装置
US9069183B2 (en) * 2011-09-28 2015-06-30 Applied Materials, Inc. Apparatus and method for speckle reduction in laser processing equipment
CN104808343B (zh) * 2014-01-29 2018-03-30 上海微电子装备（集团）股份有限公司 一种激光退火匀光装置
JP6345963B2 (ja) * 2014-03-28 2018-06-20 株式会社Ｓｃｒｅｅｎホールディングス 光照射装置および描画装置
JP6383166B2 (ja) * 2014-03-28 2018-08-29 株式会社Ｓｃｒｅｅｎホールディングス 光照射装置および描画装置
JP6476062B2 (ja) 2014-06-19 2019-02-27 株式会社Ｓｃｒｅｅｎホールディングス 光照射装置および描画装置
JP6435131B2 (ja) * 2014-08-07 2018-12-05 株式会社Ｓｃｒｅｅｎホールディングス 光照射装置、描画装置および位相差生成器
EP3098017B1 (en) 2015-05-29 2022-07-27 SCREEN Holdings Co., Ltd. Light irradiation apparatus and drawing apparatus
US10133187B2 (en) 2015-05-29 2018-11-20 SCREEN Holdings Co., Ltd. Light irradiation apparatus and drawing apparatus
KR102555436B1 (ko) * 2016-12-05 2023-07-13 삼성디스플레이 주식회사 레이저 가공 장치 및 그 가공 방법
KR102603393B1 (ko) 2016-12-06 2023-11-17 삼성디스플레이 주식회사 레이저 가공 장치
CN108037589A (zh) * 2017-12-14 2018-05-15 中国科学院西安光学精密机械研究所 一种应用于水下相机照明系统的激光光束整形系统
DE102020114077A1 (de) * 2020-05-26 2021-12-02 Limo Display Gmbh Vorrichtung zur Homogenisierung von Laserlicht und Anordnung einer Mehrzahl derartiger Vorrichtungen
CN114654108B (zh) * 2022-04-09 2023-06-23 法特迪精密科技（苏州）有限公司 Mems探针硅片切割装置
CN114883908A (zh) * 2022-05-20 2022-08-09 无锡亮源激光技术有限公司 一种小体积多单管光谱合束结构装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516832A (en) * 1982-06-23 1985-05-14 International Business Machines Corporation Apparatus for transformation of a collimated beam into a source of _required shape and numerical aperture
US4619508A (en) * 1984-04-28 1986-10-28 Nippon Kogaku K. K. Illumination optical arrangement
JPH0721583B2 (ja) * 1985-01-22 1995-03-08 株式会社ニコン 露光装置
JP4347546B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置、結晶化方法および光学系

Also Published As

Publication number Publication date
TW200610240A (en) 2006-03-16
KR20070004703A (ko) 2007-01-09
JP2006049656A (ja) 2006-02-16
DE112005001847T5 (de) 2007-06-21
DE112005001847B4 (de) 2011-05-26
JP4291230B2 (ja) 2009-07-08
WO2006013814A1 (ja) 2006-02-09
KR100755229B1 (ko) 2007-09-04

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