TW200610240A - Forming method and its apparatus of a membrane for crystallization - Google Patents

Forming method and its apparatus of a membrane for crystallization

Info

Publication number
TW200610240A
TW200610240A TW094126366A TW94126366A TW200610240A TW 200610240 A TW200610240 A TW 200610240A TW 094126366 A TW094126366 A TW 094126366A TW 94126366 A TW94126366 A TW 94126366A TW 200610240 A TW200610240 A TW 200610240A
Authority
TW
Taiwan
Prior art keywords
laser light
optical path
split beams
path difference
reduced
Prior art date
Application number
TW094126366A
Other languages
Chinese (zh)
Other versions
TWI263385B (en
Inventor
Naoyuki Kobayashi
Hideaki Kusama
Toshio Inami
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Publication of TW200610240A publication Critical patent/TW200610240A/en
Application granted granted Critical
Publication of TWI263385B publication Critical patent/TWI263385B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Laser Surgery Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

The topic of this invention is to solve a laser light source emits beam flux with a spreading angle, so that laser light transmitted through plural steps of an optical path difference to generate component is made incident to one lens of an array lens. When forming an image on an object to be illuminated, it cannot avoid interference. The dividing/reducing means (2, 3) for a laser light source A that emits laser light 1 as beam flux with a spreading angle θ, for splitting and reducing the laser light 1 into plural split beams 9 in a view on a single side face. Further, it makes the split beams 9 into individual reduced beam flux. It obtains reduced split beams 10. Furthermore, an optical path difference to generate component 7 comprises a block portion 7a for reducing the reflection of the reduced split beams 10 on a splitting-plane side. Furthermore, it individually transmits the beams and causes an optical path difference from each other, so as to adjust coherency. Subsequently, a condenser lens 5 condenses the reduced split beams 10 transmitted through the optical path difference to generate component 7. Via the condenser lens 5 and superimposed with laser light, it illuminates the irradiated surface 6.
TW094126366A 2004-08-06 2005-08-03 Making method and device of a membrane of crystallization TWI263385B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004230095A JP4291230B2 (en) 2004-08-06 2004-08-06 Method and apparatus for forming crystallized film

Publications (2)

Publication Number Publication Date
TW200610240A true TW200610240A (en) 2006-03-16
TWI263385B TWI263385B (en) 2006-10-01

Family

ID=35787099

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094126366A TWI263385B (en) 2004-08-06 2005-08-03 Making method and device of a membrane of crystallization

Country Status (5)

Country Link
JP (1) JP4291230B2 (en)
KR (1) KR100755229B1 (en)
DE (1) DE112005001847B4 (en)
TW (1) TWI263385B (en)
WO (1) WO2006013814A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104950438A (en) * 2014-03-28 2015-09-30 斯克林集团公司 Light irradiation apparatus and drawing apparatus

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US20070127005A1 (en) * 2005-12-02 2007-06-07 Asml Holding N.V. Illumination system
JP4478670B2 (en) 2006-09-08 2010-06-09 ソニー株式会社 One-dimensional illumination device and image generation device
KR100842598B1 (en) 2006-09-15 2008-07-01 엘지전자 주식회사 Screen and display device using micro lens array
JP2008124149A (en) * 2006-11-09 2008-05-29 Advanced Lcd Technologies Development Center Co Ltd Optical device, and crystallization equipment
KR100858084B1 (en) 2006-12-01 2008-09-10 삼성전자주식회사 A diffuser with a shape profile for effective speckle noise reduction and a laser projection system employing the same
JP4311453B2 (en) * 2007-01-26 2009-08-12 ソニー株式会社 LASER LIGHT SOURCE DEVICE AND IMAGE GENERATION DEVICE USING THE SAME
DE102008054582A1 (en) * 2007-12-21 2009-07-09 Carl Zeiss Smt Ag Microlithographic projection exposure machine
DE102009037141B4 (en) * 2009-07-31 2013-01-03 Carl Zeiss Laser Optics Gmbh Optical system for generating a light beam for treating a substrate
JP2011164151A (en) 2010-02-04 2011-08-25 Sony Corp Illumination device and projection type image display device
EP2506291A1 (en) * 2011-03-28 2012-10-03 Excico France Method and apparatus for forming a straight line projection on a semiconductor substrate
JP5168526B2 (en) * 2011-05-10 2013-03-21 大日本印刷株式会社 Projection-type image display device
US9069183B2 (en) 2011-09-28 2015-06-30 Applied Materials, Inc. Apparatus and method for speckle reduction in laser processing equipment
CN104808343B (en) * 2014-01-29 2018-03-30 上海微电子装备（集团）股份有限公司 A kind of laser annealing dodging device
JP6345963B2 (en) * 2014-03-28 2018-06-20 株式会社Ｓｃｒｅｅｎホールディングス Light irradiation apparatus and drawing apparatus
JP6476062B2 (en) 2014-06-19 2019-02-27 株式会社Ｓｃｒｅｅｎホールディングス Light irradiation apparatus and drawing apparatus
JP6435131B2 (en) * 2014-08-07 2018-12-05 株式会社Ｓｃｒｅｅｎホールディングス Light irradiation device, drawing device, and phase difference generator
EP3098017B1 (en) 2015-05-29 2022-07-27 SCREEN Holdings Co., Ltd. Light irradiation apparatus and drawing apparatus
US10133187B2 (en) 2015-05-29 2018-11-20 SCREEN Holdings Co., Ltd. Light irradiation apparatus and drawing apparatus
KR102555436B1 (en) * 2016-12-05 2023-07-13 삼성디스플레이 주식회사 Laser processing apparatus and method for menufacturing the same
KR102603393B1 (en) 2016-12-06 2023-11-17 삼성디스플레이 주식회사 Laser processing apparatus
CN108037589A (en) * 2017-12-14 2018-05-15 中国科学院西安光学精密机械研究所 Laser beam shaping system applied to underwater camera lighting system
CN111060295A (en) * 2020-01-10 2020-04-24 中国工程物理研究院激光聚变研究中心 Beam splitting element and calibration device
DE102020114077A1 (en) * 2020-05-26 2021-12-02 Limo Display Gmbh Device for homogenizing laser light and arrangement of a plurality of such devices
CN114654108B (en) * 2022-04-09 2023-06-23 法特迪精密科技（苏州）有限公司 MEMS probe silicon chip cutting device
CN114883908A (en) * 2022-05-20 2022-08-09 无锡亮源激光技术有限公司 Small-size multi-single-tube spectrum combining structure device

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US4516832A (en) * 1982-06-23 1985-05-14 International Business Machines Corporation Apparatus for transformation of a collimated beam into a source of _required shape and numerical aperture
JPH0721583B2 (en) * 1985-01-22 1995-03-08 株式会社ニコン Exposure equipment
US4619508A (en) * 1984-04-28 1986-10-28 Nippon Kogaku K. K. Illumination optical arrangement
JP4347546B2 (en) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター Crystallization apparatus, crystallization method and optical system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104950438A (en) * 2014-03-28 2015-09-30 斯克林集团公司 Light irradiation apparatus and drawing apparatus

Also Published As

Publication number Publication date
JP4291230B2 (en) 2009-07-08
KR100755229B1 (en) 2007-09-04
DE112005001847B4 (en) 2011-05-26
JP2006049656A (en) 2006-02-16
KR20070004703A (en) 2007-01-09
DE112005001847T5 (en) 2007-06-21
WO2006013814A1 (en) 2006-02-09
TWI263385B (en) 2006-10-01

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