TWI250406B - Gate driver multi-chip module - Google Patents

Gate driver multi-chip module Download PDF

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Publication number
TWI250406B
TWI250406B TW090106647A TW90106647A TWI250406B TW I250406 B TWI250406 B TW I250406B TW 090106647 A TW090106647 A TW 090106647A TW 90106647 A TW90106647 A TW 90106647A TW I250406 B TWI250406 B TW I250406B
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Taiwan
Prior art keywords
mosfets
module
mcm
substrate
gate driver
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TW090106647A
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English (en)
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David Jauregui
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Int Rectifier Corp
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1588—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
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Description

1250406 A7 _B7_ 五、發明説明（1 ) 本發明是有關於一種多晶片模組（multi-chip module， MCM)。本發明特別是有關於一種電腦主機板之MCM電源 電路。 電源供應電路一般在電腦主機板上佔據大量區域。需 5 要將在電腦主機板上之電源電路大小減少而不會犧牲性能 〇 本發明提供MCM，其包括MOSFET閘極驅動器，兩個 功率MOSFET，與包括輸入電容器之相關被動元件，所有 係安置於球柵陣列（BGA)基板上，且封裝於單一晶片中。 10 本發明之MCM之功率MOSFET係在一輸入電壓與接 地端間連接成一半橋排列。MOSFET閘極驅動器係連接至 此等兩個功率MOSFET之各別閘極輸入以交替地切換該些 功率MOSFET，以在該些功率MOSFET間之一共同輸出節 點處產生一交流輸出電壓。至少一個蕭特基（Schottky)二極 15 體係位於該BGA基板上，且連接於該共同輸出節點與該接 地端間以在空檔時間傳導期間將損失減至最小。 被動電路元件包括一輸入電容器，其連接於該輸入電 壓與接地端間，以提供轉換器之輸入電容值。較好的是， 此輸入電容器係實際上靠近所有其他元件。其他元件提供 20 閘極驅動器之適當偏壓。所有元件係裝填於模型複合物中 以形成該MCM封裝體。 藉由將該輸入電容〃器安置於非常靠近其他元件且位 於此非常微小之封裝體内，其具有如下文所述之數個優點 4 (請先閲讀背面之注意事項再填寫本頁} 本纸張尺度遺用屮國國¥標苹（CNS ) A4规格（2J0X297公龙） -~ _£7__ 125〇4〇6 A7 五、發明説明（2 ) 首先，輸入電容器與MOSFET間之雜散電感非常低， 其可減少於包括MOSFET寄生電容coss與雜散電感L之電 路中可能產生之”振鈐’’。減少電感將可減少電路之振鈴。 第二，在MCM封裝體中之輸入電容器之位置提供獨立 5 於主機板之佈局，其不再需要包括該電容器（在該MCM封 裝體内距離MOSFET—段距離之處）。 第三，電容器係作用為流經封裝體之一 MOSFET之主 體一極體之不需要電流（具高di/dt)之導通的旁路，且可幫 助限制MOSFET之QRR(逆回復電荷）。 10 此模組較好的是封閉於約11毫米（mm) X 11 mm(也就 是約1公分（cm) X lcm)之面積或更小的封裝體内。因此， «亥輸入電谷器與该MOSFET間之距離係小於1 cm。 本發明之MCM有利地導致尺寸減少50%而不會犧牲 性能，且對於印刷電路板（PCB)無依存性。此封裝體較分 15 離解決方案更有利地提供性能之增強。 參考附隨圖式之本發明之後續說明，本發明之其他特 徵和優點能更明顯易懂。 圖式之簡單說明： 第1圖繪示本發明之MCM中之共同封裝主動與被動元 20 件之平面圖。 第2圖繪示依照本發明之MCM之立體圖。 第3圖係依照本發明之mcm之電路圖。 第3 A圖係第3圖之一部份之等效電路。 第4圖係依照本發明之mcm之時序圖。 木過川屮S S私標準（）μ規格（2X 29?公梦） (請先閲讀背面之注意事項再填寫本頁) 訂- 1250406 A7 r____ Β7 _ 五、發明説明（3 ) 輕佳實施例 請參照第1圖，其繪示本發明之MCM 2中之較佳佈局 。MCM 2包括裝置於BGA基板4上之六個裸晶（die)。複數 個結合墊（bonding pad)6係放置於基板4之上表面上。
5 裸晶8與10係功率MOSFET，較好地分別是IRFC7811A 與IRFC7809A功率MOSFET，其係安置於半橋架構。裸晶 12是MOSFET閘極驅動器，較好地是Semtech SC1405高速 同步功率MOSFET智慧型（smart)驅動器。裸晶14、16與18 係蕭特基二極體，較好地是SKM863二極體，其連接如第3 10 圖中之電路圖所示。這些安置於基板4之上表面上之主動元 件係利用導線結合（wire bond)20而電氣連接至對應之結合 塾6 〇 第1圖中所示之被動元件包括電阻器R1與電容器C1、 C2、C3與C4，其連接也如第3圖之電路圖般。被動元件係 15 如圖所示般地直接連接至對應墊6。明顯地，電容器C4係 安置於靠近MOSFET 8與10之處。 參考第2圖，本發明之MCM 2係以立體顯示。複數個 焊球22係排列於基板4之下表面上。在此最終封裝體中，在 基板4之上表面上之元件係囊封於模型（mold)複合物24，如 20 Nitto HC 100。外殼2之尺寸係約1cm X 1cm，使其在主機 板上佔據相當小的空間。 參考第3圖，其顯示電源供應MCM 2之電路圖。功率 MOSFET 8與10係排列成半橋架構，串聯連接於輸入電壓 VIN與接地端PGND間。外部電路電容Cext係連接至VIN。 本紙適用屮固S家標半((、奶）Α4规格U]0X297公龙） 6 (請先閱讀背面之注意寧項再場寫本頁) 訂- 1250406 A7 ___B7_ 五、發明説明（4 ) MOSFET閘極驅動器12之高侧輸出閘極驅動TG係連接至 高側功率MOSFET 8之閘極輸入l^MOSFET閘極驅動器12 之低側輸出閘極驅動BG係連接至低側功率MOSFET 10之 閘極輸入21。閘極驅動器12交替地切換功率MOSFET以在 5 功率MOSFET間之共同輸出節點sw NODE處產生交流輸 出電壓。 蕭特基二極體16與18係連接於共同輸出節點SW NODE與接地端間以在空檔時間傳導期間中最小化損失。 輸入電容器C4係連接於輸入電壓VlN與接地端Pgnd間。使 10 用兩個並聯二極體16與18能使元件保持於對稱佈局。輸出 電感器30—般係連接至SW NODE與輸出電壓端子V0UT。輸 出電容器C0UT亦係處於輸出電路中。 電源供應電壓VDD係於接腳Vcc上施加至MOSFET閘 極驅動器12。由蕭特基二極體14、連接於自舉接腳BST及 15 DRN接聊間之電阻器R1/電容器C2構成之自舉（bootstrap) 電路係設以產生供高側MOSFET8用之浮接自舉電壓。 TTL位準輸入信號係提供於線DRV jN上以施加至 MOSFET驅動器接腳CO。此裝置之操作係由提供最小為2.0 伏特（V)之電壓於MOSFET驅動器12之賦能接腳EN上而賦 20 能。狀態接腳Prdy指示+5V供應電壓之狀態。當供應電壓 係低於4.4V時，此輸出係被驅動至低電位。當供應電壓係 高於4.4V時，此輸出係被驅動至高電位。此輸出配有10mA 電流源與10//A容忍力。當PRDY為低電位時，内建於驅動 器12中之過低電壓電路係允許驅動器輸出TG與BG皆為低 本纸張尺度適W屮B國家標苹（CNS ) A4规格（2.]0父297公浆） (請先閱讀背面之注意事項再填寫本頁) 訂- 1250406 A7 B7
五、發明説明（5 電位。 參考第4圖’其顯示MCM2之時序圖。一般為63]^之導 通延遲tj^ow係存在於MCM 2之信號輸入DRV IN與輸出 SW NODE間。一般為26ns之截止延遲tD(〇FF)係存在於Mcm 2之信號輸入DRV一IN與輸出SW NODE間。此延遲之一部份 係屬驅動器12中所固有者。 供應電壓之範圍可在4.2V與6.0V之間。可使用5與12V 間之輸入電壓’以提供〇·9V與2.0V之間之輸出電壓範圍。 輸出電流一般是15安培（A)。此裝置係操作於3〇〇至 1000kHz之頻率。 第3圖之電路操作係由輸入電容器(^4與1^〇§?£11 10間 之原始近間距而有顯著增強。 首先，從主機板將電容器C4移除能增加主機板之佈局 彈性。 第二，因為電容器C4係非常靠近MOSFET 8與10，主 機板上之此電路中之雜散（stray)電感係減少，相比於〇4位 於晶片外側所可能產生之雜散電感。此近位置（約1公分或 更小）本質上減少在電路中之振鈴（ring)。更詳言之，如第3 圖所示，MOSFET 10具有寄生電容C〇ss。包括雜散電感乙 與Coss之此電路係於其共振頻率處產生振鈐。藉由減少l ’也能減少振鈐。 電容器C4之第三個優點是其限制m〇SFET 10之Qrr( 逆回復電荷），且避免高di/dt從模組2流出並流入至主機板 。更詳言之，第3A圖是第3圖之部份之等效電路，其特別 1250406 A7 B7 10 五、發明説明（6 顯示MOSFET 10之主體二極體。在空檔時間中，M〇sFET 8 與10係皆截止，傳導透過第3圖之蕭特基二極體16與18而發 生，但某些”殘餘，，電流也經由MOSFET 1〇之主體二極體傳 導。在MOSFET 10之主體二極體進行傳導之情況下，當 MOSFET 8導通時，逆回復電流將以非常高之⑴/以而從外 部電容器CEXT饋入。然而，電容器C4將作用為此高di/以之 旁路。第3圖之電容器C4也具有相似目的。 良 τ、上所述，雖然本發明已以較佳實施例揭露如上，然 其並非用以限定本發明，任何熟習此技藝者，在不脫離本 發明之精神和範圍内，當可作各種之更動與潤飾，因此本 發明之保護範圍當視後附之申請專利範圍所界定者為準。 ……：-……f : (請先閲讀背面之注意事項再填寫本頁) -訂- 元件標號對照表 14、16、18…蕭特基二極體 20…閘極輸入 22…焊球 24…模型複合物 3〇…輸出電感 ,β, +纸&尺及過屮丨司國家標準（⑽）A1 2 3规格（2Κ)Χ297·公资） 1
*-MCM 2 4…基板 3 6···結合墊
8、10 — MOSFET 12…MOSFET閘極驅動器

Claims (1)

1250406 A8 B8 C8 D8 經濟部智慧財產局員工消賣合作社印製 六、申請專利範圍 ι· 一種多晶片模-(MCM)，用以提供在一電腦主機板上之 電源電路，包括·· 一球柵陣列（BGA)基板； 兩個功率MOSFET，位於該BGA基板上，且在一輸 5 入電壓與接地端間連接成一半橋排列； 一 MOSFET閘極驅動器，位於該bga基板上，且電 氣連接至該等兩個功率汹〇81^丁之各別閘極輸入以交 替地切換該等功率M0SFET，以在該等功率M〇SFEl^ 之一共同輸出節點處產生一交流輸出電壓； 至少一個二極體，位於該BGA基板上，且連接於 該共同輸出節點與該接地端間以在空檔時間傳導期間 將損失減至最小；以及 一輸入電容器，位於該BGA基板上，且連接於該 輸入電壓與該接地端之間。 2·如申印專利範圍第1項所述之模組，更包括並聯連接於 "玄一極體之另一二極體，其連接於該共同輸出節點與該 接地端間。 3·如申請專利範圍第丨項所述之模組，其中該基板具有將 近1公分（cm) X lcm或更小之面積。 4.如申请專利範圍第1項所述之模組，其中該輸入電容器 與該等M0SFET間之距離係小於1 cm。 5·如申请專利範圍第1項所述之模組，其中該輸入電容器 係相鄰於該等第一與第二MOSFET。 6·如申凊專利範圍第1項所述之模組，更包括一絕緣外殼 10 15 20
(請先/wti背面之注音？事填寫本頁) 丨裝 - •M -10 1250406 、申請專利範圍 ，其封住該基板、該等M〇SFET、該閘極驅動器以及該 至J 一個二極體’該球栅陣列係透過該外殼之底部而露 出以安置至一主機板。 •如申印專利範圍第6項所述之模組，其中該外殼具有將 5 近1cm x km或更小之面積。 8.如申請專利範圍第6項所述之模組’其中該輸入電容器 •係相鄰於該等第一與第二MOSFET。 ----------1裝-----1----訂·-------- (請先閱讀背面之注意事項再填寫本頁) 哩濟部智慧財產局員工消費合作社印裂
本紙張尺度述用中I3S家標準（CNS)A4規格（2]〇χ 297公发）
々年 >月〇日At 釉尤 申請曰期 V* \ 7Α 案 號 類 別 以上各攔由本局填註） Α4 C4 煩請委員明示，本案修正後是否變更原實質内容 發明 _ 名稱 發明 申請人 第 90106647 號
中文 英 文 姓 名 國 籍 住、居所 姓 名 (名稱） 國 住、居所 (事務所） 代表人 姓 名 專利説明書 修:93.02.13. 閘極驅動器多晶片模組 GATE DRIVER MULTI-CHIP MODULE 朱瑞吉大衛 (JAUREGUI, DAVID) 泰si) 美國加州道尼市•薛爾德爾道9118號 (9118 Sheridellau Blvd.，Downey，California 90240, U.S.A.) 美商•國際整流器公司 (INTERNATIONAL RECTIFffiR CORPORATION) 美國（U.S.A.) 美國加州愛爾斯詹道•堪薩斯街233號 (233 Kansas Street, El Segundo, California 90245, U.S.A.) 魯塞爾 L.麥可（RUSSELL，L. MICHAEL) 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐）
TW090106647A 2000-03-22 2001-03-21 Gate driver multi-chip module TWI250406B (en)

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US6879491B2 (en) 2005-04-12
US20030016505A1 (en) 2003-01-23
JP2003528449A (ja) 2003-09-24
CN1419798A (zh) 2003-05-21
US20020021560A1 (en) 2002-02-21
USRE42658E1 (en) 2011-08-30
AU2001247631A1 (en) 2001-10-03
CN1284421C (zh) 2006-11-08
WO2001072092A1 (en) 2001-09-27

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