TWI250230B - Intermittent feeding technique for increasing the melting rate of polycrystalline silicon - Google Patents
Intermittent feeding technique for increasing the melting rate of polycrystalline silicon Download PDFInfo
- Publication number
- TWI250230B TWI250230B TW091133508A TW91133508A TWI250230B TW I250230 B TWI250230 B TW I250230B TW 091133508 A TW091133508 A TW 091133508A TW 91133508 A TW91133508 A TW 91133508A TW I250230 B TWI250230 B TW I250230B
- Authority
- TW
- Taiwan
- Prior art keywords
- crucible
- polycrystalline
- wedge
- unmelted
- bare
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 133
- 238000002844 melting Methods 0.000 title claims description 52
- 230000008018 melting Effects 0.000 title claims description 51
- 238000003872 feeding technique Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 116
- 229910052732 germanium Inorganic materials 0.000 claims description 130
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 130
- 229920005591 polysilicon Polymers 0.000 claims description 80
- 239000004575 stone Substances 0.000 claims description 46
- 239000013078 crystal Substances 0.000 claims description 36
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 16
- 229910052707 ruthenium Inorganic materials 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000000155 melt Substances 0.000 claims description 12
- 229910052797 bismuth Inorganic materials 0.000 claims description 9
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- 238000003723 Smelting Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000011435 rock Substances 0.000 claims 2
- 239000007858 starting material Substances 0.000 claims 1
- 238000006467 substitution reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 12
- 230000008021 deposition Effects 0.000 description 7
- 229910052746 lanthanum Inorganic materials 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000006356 dehydrogenation reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 210000003802 sputum Anatomy 0.000 description 2
- 208000024794 sputum Diseases 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- VJTAZCKMHINUKO-UHFFFAOYSA-M chloro(2-methoxyethyl)mercury Chemical compound [Cl-].COCC[Hg+] VJTAZCKMHINUKO-UHFFFAOYSA-M 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 230000009469 supplementation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/002,862 US20030101924A1 (en) | 2001-11-15 | 2001-11-15 | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200303942A TW200303942A (en) | 2003-09-16 |
| TWI250230B true TWI250230B (en) | 2006-03-01 |
Family
ID=21702897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091133508A TWI250230B (en) | 2001-11-15 | 2002-11-15 | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20030101924A1 (enExample) |
| EP (2) | EP1820885A3 (enExample) |
| JP (1) | JP4233453B2 (enExample) |
| KR (2) | KR100860440B1 (enExample) |
| CN (2) | CN101054717B (enExample) |
| DE (1) | DE60220939T2 (enExample) |
| TW (1) | TWI250230B (enExample) |
| WO (1) | WO2003044249A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8021483B2 (en) | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| US7141114B2 (en) * | 2004-06-30 | 2006-11-28 | Rec Silicon Inc | Process for producing a crystalline silicon ingot |
| KR101470814B1 (ko) | 2006-01-20 | 2014-12-09 | 에이엠지 아이디얼캐스트 솔라 코포레이션 | 광전 변환 소자용 단결정 캐스트 실리콘 및 단결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치 |
| JP5061728B2 (ja) * | 2007-05-30 | 2012-10-31 | 信越半導体株式会社 | シリコン単結晶の育成方法 |
| JP2010534189A (ja) * | 2007-07-20 | 2010-11-04 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | シード結晶からキャストシリコンを製造するための方法及び装置 |
| US8440157B2 (en) * | 2007-07-20 | 2013-05-14 | Amg Idealcast Solar Corporation | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| US8591649B2 (en) | 2007-07-25 | 2013-11-26 | Advanced Metallurgical Group Idealcast Solar Corp. | Methods for manufacturing geometric multi-crystalline cast materials |
| WO2009015167A1 (en) | 2007-07-25 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
| US20090120353A1 (en) * | 2007-11-13 | 2009-05-14 | Memc Electronic Materials, Inc. | Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt |
| EP2072645B2 (en) † | 2007-12-19 | 2014-12-24 | Schott AG | Method for producing a monocrystalline or polycrystalline semiconductor material |
| DE102007061704A1 (de) * | 2007-12-19 | 2009-09-10 | Schott Ag | Verfahren zur Herstellung eines ein- oder polykristallinen Materials |
| TW201012978A (en) * | 2008-08-27 | 2010-04-01 | Bp Corp North America Inc | Apparatus and method of use for a casting system with independent melting and solidification |
| JP5777336B2 (ja) * | 2010-12-28 | 2015-09-09 | ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ | 多結晶シリコン原料のリチャージ方法 |
| CN103397389B (zh) * | 2013-07-30 | 2016-08-10 | 英利能源（中国）有限公司 | 单晶棒的生产方法 |
| CN103643286B (zh) * | 2013-12-13 | 2016-08-17 | 英利集团有限公司 | 单晶炉的加料方法 |
| CN106222750A (zh) * | 2016-09-30 | 2016-12-14 | 中国电子科技集团公司第二十六研究所 | 一种硅酸镓镧系列晶体生长方法 |
| CN108018602A (zh) * | 2016-11-03 | 2018-05-11 | 上海新昇半导体科技有限公司 | 自动进料系统及进料方法 |
| US12428750B2 (en) | 2022-02-25 | 2025-09-30 | Globalwafers Co., Ltd. | Ingot puller apparatus having silicon feed tubes with kick plates |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5059410A (en) * | 1985-08-01 | 1991-10-22 | Ethyl Corporation | Production of silicon |
| US5205998A (en) * | 1985-08-01 | 1993-04-27 | Ethyl Corporation | Angle of repose valve |
| JPH0633218B2 (ja) * | 1987-12-08 | 1994-05-02 | 日本鋼管株式会社 | シリコン単結晶の製造装置 |
| EP0340941A1 (en) * | 1988-04-28 | 1989-11-08 | Nkk Corporation | Method and apparatus for manufacturing silicon single crystals |
| US5037503A (en) * | 1988-05-31 | 1991-08-06 | Osaka Titanium Co., Ltd. | Method for growing silicon single crystal |
| FI901413A7 (fi) * | 1989-03-30 | 1990-10-01 | Nippon Kokan Kk | Laite piiyksittäiskiteiden valmistamiseksi |
| JP2525246B2 (ja) * | 1989-07-05 | 1996-08-14 | 東芝セラミックス株式会社 | 粒状シリコン原料供給装置 |
| US5569325A (en) * | 1991-04-22 | 1996-10-29 | Condea Vista Company | Process for growing crystals |
| JPH0511788A (ja) * | 1991-06-28 | 1993-01-22 | Y & Y:Kk | 車載用疑似エンジン音再生装置 |
| JP2754104B2 (ja) * | 1991-10-15 | 1998-05-20 | 信越半導体株式会社 | 半導体単結晶引上用粒状原料供給装置 |
| DE4323793A1 (de) * | 1993-07-15 | 1995-01-19 | Wacker Chemitronic | Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung |
| JP2935337B2 (ja) * | 1994-11-21 | 1999-08-16 | 信越半導体株式会社 | 粒状原料の供給装置およびその供給方法 |
| US5588993A (en) * | 1995-07-25 | 1996-12-31 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| US5642751A (en) * | 1995-09-14 | 1997-07-01 | Crawley; Michael F. | Valve assembly |
| TW503265B (en) * | 1995-12-28 | 2002-09-21 | Mitsubishi Material Silicon | Single crystal pulling apparatus |
| TW429273B (en) * | 1996-02-08 | 2001-04-11 | Shinetsu Handotai Kk | Method for feeding garnular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal |
| JPH10158088A (ja) * | 1996-11-25 | 1998-06-16 | Ebara Corp | 固体材料の製造方法及びその製造装置 |
| JP3189764B2 (ja) * | 1997-09-29 | 2001-07-16 | 住友金属工業株式会社 | シリコン単結晶原料の溶解方法 |
| US5919303A (en) * | 1997-10-16 | 1999-07-06 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
| JPH11255588A (ja) * | 1998-03-12 | 1999-09-21 | Super Silicon Kenkyusho:Kk | 単結晶原料供給装置及び単結晶原料供給方法 |
| US6284040B1 (en) * | 1999-01-13 | 2001-09-04 | Memc Electronic Materials, Inc. | Process of stacking and melting polycrystalline silicon for high quality single crystal production |
| CN1095505C (zh) * | 2000-03-30 | 2002-12-04 | 天津市环欧半导体材料技术有限公司 | 生产硅单晶的直拉区熔法 |
| US6454851B1 (en) * | 2000-11-09 | 2002-09-24 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
-
2001
- 2001-11-15 US US10/002,862 patent/US20030101924A1/en not_active Abandoned
-
2002
- 2002-11-12 KR KR1020077006666A patent/KR100860440B1/ko not_active Expired - Fee Related
- 2002-11-12 CN CN2007100860084A patent/CN101054717B/zh not_active Expired - Fee Related
- 2002-11-12 EP EP07104628A patent/EP1820885A3/en not_active Withdrawn
- 2002-11-12 WO PCT/US2002/036169 patent/WO2003044249A1/en not_active Ceased
- 2002-11-12 JP JP2003545864A patent/JP4233453B2/ja not_active Expired - Fee Related
- 2002-11-12 EP EP02789582A patent/EP1446517B1/en not_active Expired - Lifetime
- 2002-11-12 KR KR1020047007450A patent/KR100811989B1/ko not_active Expired - Fee Related
- 2002-11-12 CN CNB028223144A patent/CN1314842C/zh not_active Expired - Fee Related
- 2002-11-12 DE DE60220939T patent/DE60220939T2/de not_active Expired - Lifetime
- 2002-11-15 TW TW091133508A patent/TWI250230B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1446517B1 (en) | 2007-06-27 |
| CN1314842C (zh) | 2007-05-09 |
| CN101054717B (zh) | 2012-04-25 |
| US20030101924A1 (en) | 2003-06-05 |
| TW200303942A (en) | 2003-09-16 |
| CN1585838A (zh) | 2005-02-23 |
| DE60220939T2 (de) | 2008-01-03 |
| DE60220939D1 (de) | 2007-08-09 |
| WO2003044249A1 (en) | 2003-05-30 |
| CN101054717A (zh) | 2007-10-17 |
| EP1820885A2 (en) | 2007-08-22 |
| JP4233453B2 (ja) | 2009-03-04 |
| EP1446517A1 (en) | 2004-08-18 |
| EP1820885A3 (en) | 2008-11-12 |
| KR100860440B1 (ko) | 2008-09-25 |
| JP2005515951A (ja) | 2005-06-02 |
| KR20070038578A (ko) | 2007-04-10 |
| KR100811989B1 (ko) | 2008-03-10 |
| KR20050044493A (ko) | 2005-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4225688B2 (ja) | ポリシリコン装填物からシリコンメルトを製造する方法 | |
| KR100411963B1 (ko) | 다결정실리콘장입물로부터실리콘용융물을제조하는방법 | |
| TW200303942A (en) | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon | |
| TWI428482B (zh) | 製備用於矽晶體成長之矽粉末融化物之方法 | |
| CN102534755B (zh) | 再装填原料多晶硅的方法 | |
| WO1993012272A1 (fr) | Procede et appareil de coulee d'un lingot de silicium cristallin par fusion par bombardement electronique | |
| JP2002535223A (ja) | 高品質単結晶製造のために多結晶シリコンを積み重ね、溶融させる方法 | |
| JP6562525B2 (ja) | 単結晶製造装置 | |
| JPH09208368A (ja) | 粒状シリコン原料の供給方法および供給管 | |
| CN110546315B (zh) | 单晶制造装置 | |
| JP2531415B2 (ja) | 結晶成長方法 | |
| US7871590B2 (en) | Mass of silicon solidified from molten state and process for producing the same | |
| Ponomarev et al. | Plasma-arc growth of refractory single crystals from SHS products and green mixtures: an autoreview | |
| JP2000063194A (ja) | 原料を坩堝に充填する方法 | |
| JP7318884B2 (ja) | 鉄ガリウム合金の単結晶育成方法 | |
| JPH01282191A (ja) | 単結晶製造方法 | |
| JPH05148073A (ja) | シリコン単結晶の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |